CM3131-01SH

更新时间:2024-09-18 06:24:14
品牌:CALMIRCO
描述:Triple Linear Voltage Regulator for DDR-I/-II Memory

CM3131-01SH 概述

Triple Linear Voltage Regulator for DDR-I/-II Memory 三路线性稳压器为DDR -I / -II内存 其他模拟IC

CM3131-01SH 规格参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:HLSOP,
针数:8Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.84
Is Samacsys:N模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-PDSO-G8长度:4.915 mm
湿度敏感等级:1功能数量:1
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:HLSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.62 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.8 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

CM3131-01SH 数据手册

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CM3131  
Triple Linear Voltage Regulator for DDR-I/-II Memory  
Product Description  
Features  
The CM3131 family of all-linear regulators provides  
an integrated power solution for DDR-I/-II memory  
systems in both run-time and standby modes of  
operation. The CM3131 is ideal for designs  
incorporating both a main 3.3V and a standby (3.3V  
or 5V) supply. The CM3131 features three  
independent linear regulators for VDDQ, VTT and VSTBY  
supply regulation and will maintain an accuracy of  
1% across the operating temperature range.  
Integrated power solution for DDR-I and DDR-II  
memory systems with few external components  
Three all-linear regulators for VDDQ, VTT and  
VSTBY power supply applications  
Lowest system cost and smallest footprint for  
DDR power solutions  
VDDQ regulator/driver utilizes external N-FET to  
provide up to 15A current at 2.5V/1.8V  
VTT source/sink regulator provides up to 2A at  
1.25V for DDR-I systems or 0.65A at 0.9V for  
the DDR-II memory controller (not DDR-II  
memory)  
LDO standby regulator provides up to 500mA at  
2.5V for DDR-I and at 1.8V for DDR-II systems  
Can be ganged for higher current applications  
Over temperature and reverse current protection  
Over current protection for VSTBY and VTT  
regulator  
The CM3131 is offered in two configurations. The  
CM3131-01/11 drives a single external N-FET on a  
single VDDQ rail. The CM3131-02 drives two external  
unmatched N-FETs on two VDDQ rails. Each VDDQ rail  
incorporates an adjustment pin (SENSE) to enable  
setting VDDQ in the 2.2V to 2.8V range, supporting  
DIMMs with different supply requirements or DDR-II  
type devices.  
The CM3131-01/11 is available in 8-lead PSOP  
package and the CM3131-02 is available in 14-lead  
PSOP package.  
Available in 8 lead and 14 lead PSOP packages  
Lead-free versions available  
The CM3131 devices are also available with optional  
lead-free finishing.  
Applications  
Desktop PCs, notebooks, and workstations  
Set top boxes, digital TVs, printers  
Embedded systems  
Electrical Schematic  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
1
CM3131  
PACKAGE / PINOUT DIAGRAM  
TOP VIEW  
TOP VIEW  
NC  
VTT  
DRIVE  
VSTBY  
VDDQ  
GND  
VDDQ1  
SEL  
NC  
VDDQ2  
VTT  
CM3131-02  
SENSE2  
DRIVE2  
DRIVE1  
VSTBY  
CM3131-01/11  
GND  
VCC  
SENSE1  
VCC  
SEL/EN  
SENSE  
EN  
PSOP-8  
PSOP-14  
Note: These drawings are not to scale.  
PIN DESCRIPTIONS  
PART NUMBER  
DESCRIPTION  
NAME  
-01  
-11  
-02  
1
1
13  
VDDQ / VDDQ1  
VDDQ input for VREF and VDDQ Output in Standby  
VTT Output for termination resistors  
No connection  
2
2
3
14  
1
VTT  
NC  
3
4
2
GND  
Ground  
3
SEL  
Select Input, active low  
4
NC  
No connection  
4
5
6
7
8
7
EN  
Enable Input, active high  
5
6
7
8
5
SENSE / SENSE1  
VCC  
Sense Input, Adjusts VDDQ Rail  
3.3V Main Input Supply  
6
8
VSTBY  
3.3V or 5V Standby Input Supply  
Drive Output for VDDQ External n-FET  
Drive Output for VDDQ External n-FET  
Sense Input, Adjusts VDDQ Rail  
VDDQ Input for VREF and VDDQ Output in Standby  
9
DRIVE / DRIVE1  
DRIVE2  
SENSE2  
VDDQ 2  
10  
11  
12  
Ordering Information  
PART NUMBERING INFORMATION  
STANDARD FINISH  
LEAD-FREE FINISH  
ORDERING PART  
NUMBER1  
PART  
MARKETING  
ORDERING  
PART  
MARKING  
PINS  
PACKAGE  
PART NUMBER1  
8
8
14  
PSOP-8  
PSOP-8  
PSOP-14  
CM3131-01SB  
CM3131-11SB  
CM3131-02SB  
CM3131-01SB  
CM3131-11SB  
CM3131-02SB  
CM3131-01SH  
CM3131-11SH  
CM3131-02SH  
CM3131-01SH  
CM3131-11SH  
CM3131-02SH  
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
2
CM3131  
Functional Description  
1.25V to or from the DDR-I bus termination resistors.  
For DDR-II applications, the regulator sinks or  
sources 0.65A at 0.9V. The VTT output voltage  
accurately tracks VDDQ/2 to 1%. When there is no  
VCC provided, VTT is powered down and its output is  
0V. This regulator has overload current limiting of  
2.5A.  
The CM3131-01 / -11 and CM3131-02 provide  
power for DDR-I/DDR-II memories from three  
voltage regulators on-chip with either one or two  
external N-FETs respectively. There is an over-  
temperature thermal shutdown if any of the  
regulators overheat. Each regulator has reverse  
current protection in the event of any being shut  
down.  
The standby regulator is a LDO regulator that is  
powered from a standby voltage, VSTBY, of 3.3V or  
5V, and supplies a regulated output of up to 500mA  
to the VDDQ of the DDR memory to enable it to retain  
its contents during the standby mode. It provides  
2.5V for DDR-I and 1.8V for DDR-II.  
The linear regulator-driver/s with external N-FET/s  
can provide up to 15A at 2.5V/1.8V for the VDDQ of  
DDR-I/-II memory, from an input supply voltage of  
2.8V-3.6V. An external feedback resistor divider,  
connected to the SENSE1 pin, enables selection of  
VDDQ output voltages from 2.2V to 2.8V for use with  
DDR-I memories requiring other than 2.5V for VDDQ  
VDDQ = 1.25V x (R1+R2)/R2. When SENSE1 is  
connected to GND or left open, VDDQ is fixed at  
2.50V (and VTT at 1.25V). For DDR-II operation,  
VDDQ can be set from 1.7V to 1.9V.  
The CM3131-01 and CM3131-11 differ with regards  
the selection of truth table for determining which S0-  
S5 sequencing matrix the chip is set for. The  
CM3131-02 has both EN and SEL pins to more  
accurately define each Sx stage without monitoring  
the VCC or VSTBY voltages.  
.
The VTT regulator is a linear source-sink regulator  
powered from the VDDQ output that supplies the VTT  
supply required by DDR-I memory termination  
resistors. This regulator sinks or sources up to 2A at  
Two CM3131s can be ganged together to provide  
V
DDQ power to dual channels of DDR memory, and  
the memory controller chip of any chip set.  
2.8V / 3.0V / 3.3V for DDR-I,  
2.2V /2.5V / 3.3V for DDR-II  
2.8V / 3.0V / 3.3V for DDR-I,  
2.2V /2.5V / 3.3V for DDR-II  
VCC  
Internal VSBY voltage  
doubler ensures VG > 5.3V  
Drives any N-FET with CGS  
<1200pF  
VCC  
CM3131-01/11  
CM3131-02  
PSOP-8  
DRIVE1  
N-FET1  
VDDQ  
VDDQ  
LDO Drive  
DRIVE  
LDO Drives  
FET  
DRIVE2  
N-FET2  
VDDQ1  
5VSTBY / 3.3VSTBY  
VDDQ1  
VDDQ2  
5VSTBY / 3.3VSTBY  
VDDQ  
VDDQ  
LDO  
VDDQ  
R1  
VDDQ  
VDDQ2  
LDOs  
R3  
CDDQ2  
R1  
R2  
SEL  
EN  
V
DDQ / VTT  
Control  
SEL / EN  
VDDQ / VTT  
Control  
SENSE1  
SENSE2  
Only needed for  
DDR-I if VDDQ is  
not 2.5V, e.g. 2.6V  
or 2.7V.  
Set to 1.7V to  
1.9V for DDR-II  
SENSE  
R2  
CDDQ  
R4  
VDDQ  
CDDQ1  
VDDQ  
GND  
CSBY  
CSBY  
GND  
Linear  
Source-Sink  
TT Reg  
Linear  
Source-Sink  
VTT  
VTT  
CTT  
VTT  
VTT  
CCC  
CCC  
V
V
TT Reg  
CTT  
GND  
GND  
Examples of Single and Dual N-FET Drive Configurations  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
3
CM3131  
Functional Description (cont’d)  
VCC  
3V/3.3V  
VSTBY  
5V/3.3V  
SEL  
ON  
VDDQ 1,2  
VDDQ  
VTT  
VDDQ / 2  
X
<VCC MIN  
X
5V/3.3V  
X
OFF  
ON  
VDDQ STBY  
0V  
0V  
0V  
0V  
<VSTBY MIN  
OFF  
0V  
Truth Table for CM3131-01  
S to R  
S0  
VCC  
VSTBY  
5V/3.3V  
SEL  
ON  
VDDQ OUT  
VDDQ  
VTT OUT  
VDDQ / 2  
3V/3.3V  
S1  
S2  
S3  
S4  
S5  
3V/3.3V  
3V/3.3V  
3V/3.3V  
<VCC MIN  
<VCC MIN  
5V/3.3V  
5V/3.3V  
5V/3.3V  
5V/3.3V  
5V/3.3V  
ON  
ON  
VDDQ  
VDDQ / 2  
VDDQ / 2  
0V  
VDDQ  
OFF  
OFF  
OFF  
VDDQ STBY  
0V  
0V  
0V  
0V  
Sequencing Matrix for CM3131-01 for Suspend to RAM operation  
No S to R VCC  
VSTBY  
5V/3.3V  
SEL  
ON  
VDDQ OUT  
VDDQ  
VDDQ  
VDDQ  
0V  
VTT OUT  
VDDQ / 2  
S0  
S1  
S2  
S3  
S4  
S5  
3V/3.3V  
3V/3.3V  
3V/3.3V  
<VCC MIN  
<VCC MIN  
<VCC MIN  
5V/3.3V  
5V/3.3V  
5V/3.3V  
5V/3.3V  
5V/3.3V  
ON  
ON  
ON  
ON  
ON  
VDDQ / 2  
VDDQ / 2  
0V  
0V  
0V  
0V  
0V  
Sequencing Matrix for CM3131-01 for Suspend to RAM Not Supported  
VCC  
3V/3.3V  
VSTBY  
5V/3.3V  
EN  
VDDQ OUT  
VDDQ  
VTT OUT  
VDDQ / 2  
ON  
ON  
<VCC MIN  
<VCC MIN  
X
5V/3.3V  
X
VDDQ STBY  
0V  
0V  
0V  
0V  
OFF  
OFF  
<VSTBY MIN  
0V  
Truth Table for CM3131-11  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
4
CM3131  
Functional Description (cont’d)  
S to R  
S0  
VCC  
3V/3.3V  
VSTBY  
5V/3.3V  
EN  
VDDQ OUT  
VDDQ  
VTT OUT  
VDDQ / 2  
ON  
ON  
S1  
S2  
S3  
S4  
S5  
3V/3.3V  
3V/3.3V  
<VCC MIN  
<VCC MIN  
<VCC MIN  
5V/3.3V  
5V/3.3V  
5V/3.3V  
5V/3.3V  
5V/3.3V  
VDDQ  
VDDQ / 2  
VDDQ / 2  
0V  
ON  
VDDQ  
ON  
VDDQ STBY  
0V  
OFF  
OFF  
0V  
0V  
0V  
Sequencing Matrix for CM3131-11 for Suspend to RAM operation  
VCC  
VSTBY  
SEL  
ON  
EN  
VDDQ OUT VTT OUT  
3V/3.3V 5V/3.3V  
<VCC MIN 5V/3.3V  
ON  
ON  
ON  
ON  
VDDQ  
VDDQ STBY  
0V  
VDDQ / 2  
0V  
OFF  
OFF  
ON  
X
X
0V  
<VSTBY MIN  
0V  
X
X
0V  
0V  
<VCC MIN  
OFF  
0V  
0V  
Truth Table for CM3131-02  
Table 3 VCC  
VSTBY  
SEL  
ON  
EN  
VDDQ OUT VTT OUT  
S0  
S1  
S2  
S3  
S4  
S5  
3V/3.3V 5V/3.3V  
3V/3.3V 5V/3.3V  
3V/3.3V 5V/3.3V  
<VCC MIN 5V/3.3V  
ON  
ON  
ON  
ON  
VDDQ  
VDDQ  
VDDQ  
VDDQ STBY  
0V  
VDDQ / 2  
VDDQ / 2  
VDDQ / 2  
0V  
ON  
ON  
OFF  
ON  
<VCC MIN  
<VCC MIN  
X
X
OFF  
OFF  
0V  
ON  
0V  
0V  
Sequencing Matrix for CM3131-02 for Suspend to RAM operation  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
5
CM3131  
Specifications  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
RATING  
UNITS  
ESD (Human Body Model)  
VCC, VSTBY, DRIVEx  
SEL, SENSEx  
2000  
V
V
V
V
(GND – 0.6) to (+6.5)  
(GND – 0.6) to (VCC + 0.6)  
(GND – 0.6) to (VCC + 0.6)  
VDDQX, VTT  
Operating Temperature Range  
Ambient  
0 to +70  
0 to +125  
°C  
°C  
Junction  
Storage Temperature Range  
-40 to +150  
°C  
STANDARD OPERATING CONDITIONS  
PARAMETER  
RATING  
UNITS  
Temperature Range (Ambient)  
0 to +70  
°C  
1. VDDQ Regulator-Driver  
Supply Voltage VCC  
Load Current  
CCC, CDDQ  
2.8 to 3.6  
0 to 15  
4.7, 220  
V
A
µF  
2. VTT Regulator  
Supply Voltage VDDQ  
Load Current  
CTT  
1.8 or 2.5  
0 to +/- 0.9 or +/- 2.0  
220  
V
A
µF  
3, VSTBY Regulator  
Supply Voltage VSTBY  
Load Current  
3.0 to 5.5  
0 to 500  
V
mA  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
6
CM3131  
Specifications (cont’d)  
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)  
SYMBOL  
General Parameters  
TOVER Shutdown Junction  
Temperature  
VDDQ Regulator/Driver Parameters (with FDP6030L or similar MOSFET as an external transistor)  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
-
150  
-
°C  
VCC MIN  
Input Voltage  
VDDQ = 2.5V, IDDQ = 6A,  
each channel, SENSE = 0V  
IDDQ = 2.5A, VCC = 3.3V,  
SENSE = 0V  
VSTBY = 5V, VCC = 3.3V  
VSTBY = 3.3V, VCC = 3.3V  
VSTBY = 5V, VCC = 3.3V  
2.80  
V
V
VDDQ  
Output Voltage Range  
2.45  
2.50  
9.50  
6.1  
2.55  
VDRIVE H 5  
VDRIVE H 3  
CLOAD  
DRIVE High Output  
Voltage  
DRIVE High Output  
Voltage  
External FET Gate  
Capacitance  
DRIVE Voltage Rise  
Time  
Load Regulation @  
25°C  
Line Regulation @ 25°C  
V
V
1200  
2.5  
pF  
ms  
%
tRISE  
VSTBY = 5V, VCC = 3.3V,  
CLOAD = 1200pF  
VCC = 3.3V, IDDQ = 0.1A to 6A  
each channel  
VDDQ LOAD  
-1.0  
-1.0  
-
1.0  
1.0  
VDDQ LINE  
IDDQ = 2.5A, VCC = 2.8V to  
3.6V  
-
%
VTT Regulator Parameters  
VTT  
Output Voltage Range  
VDDQ = 2.50V, ITT = 0A  
1.20  
-1.0  
-1.0  
2.3  
1.25  
1.30  
1.0  
1.0  
V
%
%
A
VTT LOAD  
VTT LINE  
ITT LIM  
ITT SC  
Load Regulation @ 25C  
Line Regulation @ 25C  
Current Limit  
Short Circuit Current  
Limit  
ITT = 0.1A to 2A, VDDQ = 2.5V  
ITT = 0A, VCC = 2.8V to 3.6V  
-
-
VTT < 1V  
0.6  
A
VSTBY Regulator Parameters  
VDDQ STBY  
VDDQSB LD  
VDDQ SBLN  
Output Voltage Range  
IDDQ =150mA, VSTBY = 5V,  
SENSE =0V  
IDDQ = 10mA to 500mA,  
VSTBY = 5V  
IDDQ = 150mA,  
VSTBY = 3.0V to 5.5V  
2.45  
-1.0  
-1.0  
2.50  
2.55  
1.0  
V
Load Regulation @ 25C  
Line Regulation @ 25C  
-
-
%
%
1.0  
VDROPOUT  
ISTBY LIM  
ISTBY SC  
Dropout Voltage  
Overload Current Limit  
IDDQ = 250mA, each channel  
VDDQ < 1V  
250  
450  
mV  
mA  
mA  
400  
170  
Short Circuit Current  
Limit  
Note 1: All parameters specified at TA = 0°C to +70°C unless otherwise noted.  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
7
CM3131  
Specifications (cont’d)  
ELECTRICAL OPERATING CHARACTERISTICS (Cont’d)  
SYMBOL  
All Regulators  
ICCN  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Normal Mode VCC  
Supply Current  
Normal mode (S0-S2)  
(VDDQ1,2=VDDQ ,VTT=VDDQ/2)  
5
µA  
µA  
µA  
µA  
ISTBYN  
ISTBYS  
ISTBYQ  
Normal Mode VSTBY  
Supply Current  
Standby Mode VSTBY  
Supply Current  
Normal mode (S0-S2)  
(VDDQ1,2=VDDQ ,VTT=VDDQ/2)  
Standby mode (S3)  
(VDDQ1,2=VDDQSTBY ,VTT=0)  
1650  
550  
70  
2450  
850  
120  
Shutdown Mode  
Quiescent Current  
Shutdown mode (S4-S5)  
(VDDQ1,2=0 ,VTT=0)  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
8
CM3131  
Mechanical Details  
8-lead PSOP Package Dimensions  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
9
CM3131  
Mechanical Details (cont’d)  
14-lead PSOP Package Dimensions  
© 2004 California Micro Devices Corp. All rights reserved.  
02/02/04  
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
10  

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