CM3131-01SH
更新时间:2024-09-18 06:24:14
品牌:CALMIRCO
描述:Triple Linear Voltage Regulator for DDR-I/-II Memory
CM3131-01SH 概述
Triple Linear Voltage Regulator for DDR-I/-II Memory 三路线性稳压器为DDR -I / -II内存 其他模拟IC
CM3131-01SH 规格参数
是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | HLSOP, |
针数: | 8 | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.84 |
Is Samacsys: | N | 模拟集成电路 - 其他类型: | ANALOG CIRCUIT |
JESD-30 代码: | R-PDSO-G8 | 长度: | 4.915 mm |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | HLSOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 1.62 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.8 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
CM3131-01SH 数据手册
通过下载CM3131-01SH数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载CM3131
Triple Linear Voltage Regulator for DDR-I/-II Memory
Product Description
Features
The CM3131 family of all-linear regulators provides
an integrated power solution for DDR-I/-II memory
systems in both run-time and standby modes of
operation. The CM3131 is ideal for designs
incorporating both a main 3.3V and a standby (3.3V
or 5V) supply. The CM3131 features three
independent linear regulators for VDDQ, VTT and VSTBY
supply regulation and will maintain an accuracy of
1% across the operating temperature range.
•
•
•
•
•
Integrated power solution for DDR-I and DDR-II
memory systems with few external components
Three all-linear regulators for VDDQ, VTT and
VSTBY power supply applications
Lowest system cost and smallest footprint for
DDR power solutions
VDDQ regulator/driver utilizes external N-FET to
provide up to 15A current at 2.5V/1.8V
VTT source/sink regulator provides up to 2A at
1.25V for DDR-I systems or 0.65A at 0.9V for
the DDR-II memory controller (not DDR-II
memory)
LDO standby regulator provides up to 500mA at
2.5V for DDR-I and at 1.8V for DDR-II systems
Can be ganged for higher current applications
Over temperature and reverse current protection
Over current protection for VSTBY and VTT
regulator
The CM3131 is offered in two configurations. The
CM3131-01/11 drives a single external N-FET on a
single VDDQ rail. The CM3131-02 drives two external
unmatched N-FETs on two VDDQ rails. Each VDDQ rail
incorporates an adjustment pin (SENSE) to enable
setting VDDQ in the 2.2V to 2.8V range, supporting
DIMMs with different supply requirements or DDR-II
type devices.
•
•
•
•
The CM3131-01/11 is available in 8-lead PSOP
package and the CM3131-02 is available in 14-lead
PSOP package.
•
•
Available in 8 lead and 14 lead PSOP packages
Lead-free versions available
The CM3131 devices are also available with optional
lead-free finishing.
Applications
•
•
•
Desktop PCs, notebooks, and workstations
Set top boxes, digital TVs, printers
Embedded systems
Electrical Schematic
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
1
CM3131
PACKAGE / PINOUT DIAGRAM
TOP VIEW
TOP VIEW
NC
VTT
DRIVE
VSTBY
VDDQ
GND
VDDQ1
SEL
NC
VDDQ2
VTT
CM3131-02
SENSE2
DRIVE2
DRIVE1
VSTBY
CM3131-01/11
GND
VCC
SENSE1
VCC
SEL/EN
SENSE
EN
PSOP-8
PSOP-14
Note: These drawings are not to scale.
PIN DESCRIPTIONS
PART NUMBER
DESCRIPTION
NAME
-01
-11
-02
1
1
13
VDDQ / VDDQ1
VDDQ input for VREF and VDDQ Output in Standby
VTT Output for termination resistors
No connection
2
2
3
14
1
VTT
NC
3
4
2
GND
Ground
3
SEL
Select Input, active low
4
NC
No connection
4
5
6
7
8
7
EN
Enable Input, active high
5
6
7
8
5
SENSE / SENSE1
VCC
Sense Input, Adjusts VDDQ Rail
3.3V Main Input Supply
6
8
VSTBY
3.3V or 5V Standby Input Supply
Drive Output for VDDQ External n-FET
Drive Output for VDDQ External n-FET
Sense Input, Adjusts VDDQ Rail
VDDQ Input for VREF and VDDQ Output in Standby
9
DRIVE / DRIVE1
DRIVE2
SENSE2
VDDQ 2
10
11
12
Ordering Information
PART NUMBERING INFORMATION
STANDARD FINISH
LEAD-FREE FINISH
ORDERING PART
NUMBER1
PART
MARKETING
ORDERING
PART
MARKING
PINS
PACKAGE
PART NUMBER1
8
8
14
PSOP-8
PSOP-8
PSOP-14
CM3131-01SB
CM3131-11SB
CM3131-02SB
CM3131-01SB
CM3131-11SB
CM3131-02SB
CM3131-01SH
CM3131-11SH
CM3131-02SH
CM3131-01SH
CM3131-11SH
CM3131-02SH
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
2
CM3131
Functional Description
1.25V to or from the DDR-I bus termination resistors.
For DDR-II applications, the regulator sinks or
sources 0.65A at 0.9V. The VTT output voltage
accurately tracks VDDQ/2 to 1%. When there is no
VCC provided, VTT is powered down and its output is
0V. This regulator has overload current limiting of
2.5A.
The CM3131-01 / -11 and CM3131-02 provide
power for DDR-I/DDR-II memories from three
voltage regulators on-chip with either one or two
external N-FETs respectively. There is an over-
temperature thermal shutdown if any of the
regulators overheat. Each regulator has reverse
current protection in the event of any being shut
down.
The standby regulator is a LDO regulator that is
powered from a standby voltage, VSTBY, of 3.3V or
5V, and supplies a regulated output of up to 500mA
to the VDDQ of the DDR memory to enable it to retain
its contents during the standby mode. It provides
2.5V for DDR-I and 1.8V for DDR-II.
The linear regulator-driver/s with external N-FET/s
can provide up to 15A at 2.5V/1.8V for the VDDQ of
DDR-I/-II memory, from an input supply voltage of
2.8V-3.6V. An external feedback resistor divider,
connected to the SENSE1 pin, enables selection of
VDDQ output voltages from 2.2V to 2.8V for use with
DDR-I memories requiring other than 2.5V for VDDQ
VDDQ = 1.25V x (R1+R2)/R2. When SENSE1 is
connected to GND or left open, VDDQ is fixed at
2.50V (and VTT at 1.25V). For DDR-II operation,
VDDQ can be set from 1.7V to 1.9V.
The CM3131-01 and CM3131-11 differ with regards
the selection of truth table for determining which S0-
S5 sequencing matrix the chip is set for. The
CM3131-02 has both EN and SEL pins to more
accurately define each Sx stage without monitoring
the VCC or VSTBY voltages.
.
The VTT regulator is a linear source-sink regulator
powered from the VDDQ output that supplies the VTT
supply required by DDR-I memory termination
resistors. This regulator sinks or sources up to 2A at
Two CM3131s can be ganged together to provide
V
DDQ power to dual channels of DDR memory, and
the memory controller chip of any chip set.
2.8V / 3.0V / 3.3V for DDR-I,
2.2V /2.5V / 3.3V for DDR-II
2.8V / 3.0V / 3.3V for DDR-I,
2.2V /2.5V / 3.3V for DDR-II
VCC
Internal VSBY voltage
doubler ensures VG > 5.3V
Drives any N-FET with CGS
<1200pF
VCC
CM3131-01/11
CM3131-02
PSOP-8
DRIVE1
N-FET1
VDDQ
VDDQ
LDO Drive
DRIVE
LDO Drives
FET
DRIVE2
N-FET2
VDDQ1
5VSTBY / 3.3VSTBY
VDDQ1
VDDQ2
5VSTBY / 3.3VSTBY
VDDQ
VDDQ
LDO
VDDQ
R1
VDDQ
VDDQ2
LDOs
R3
CDDQ2
R1
R2
SEL
EN
V
DDQ / VTT
Control
SEL / EN
VDDQ / VTT
Control
SENSE1
SENSE2
Only needed for
DDR-I if VDDQ is
not 2.5V, e.g. 2.6V
or 2.7V.
Set to 1.7V to
1.9V for DDR-II
SENSE
R2
CDDQ
R4
VDDQ
CDDQ1
VDDQ
GND
CSBY
CSBY
GND
Linear
Source-Sink
TT Reg
Linear
Source-Sink
VTT
VTT
CTT
VTT
VTT
CCC
CCC
V
V
TT Reg
CTT
GND
GND
Examples of Single and Dual N-FET Drive Configurations
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
3
CM3131
Functional Description (cont’d)
VCC
3V/3.3V
VSTBY
5V/3.3V
SEL
ON
VDDQ 1,2
VDDQ
VTT
VDDQ / 2
X
<VCC MIN
X
5V/3.3V
X
OFF
ON
VDDQ STBY
0V
0V
0V
0V
<VSTBY MIN
OFF
0V
Truth Table for CM3131-01
S to R
S0
VCC
VSTBY
5V/3.3V
SEL
ON
VDDQ OUT
VDDQ
VTT OUT
VDDQ / 2
3V/3.3V
S1
S2
S3
S4
S5
3V/3.3V
3V/3.3V
3V/3.3V
<VCC MIN
<VCC MIN
5V/3.3V
5V/3.3V
5V/3.3V
5V/3.3V
5V/3.3V
ON
ON
VDDQ
VDDQ / 2
VDDQ / 2
0V
VDDQ
OFF
OFF
OFF
VDDQ STBY
0V
0V
0V
0V
Sequencing Matrix for CM3131-01 for Suspend to RAM operation
No S to R VCC
VSTBY
5V/3.3V
SEL
ON
VDDQ OUT
VDDQ
VDDQ
VDDQ
0V
VTT OUT
VDDQ / 2
S0
S1
S2
S3
S4
S5
3V/3.3V
3V/3.3V
3V/3.3V
<VCC MIN
<VCC MIN
<VCC MIN
5V/3.3V
5V/3.3V
5V/3.3V
5V/3.3V
5V/3.3V
ON
ON
ON
ON
ON
VDDQ / 2
VDDQ / 2
0V
0V
0V
0V
0V
Sequencing Matrix for CM3131-01 for Suspend to RAM Not Supported
VCC
3V/3.3V
VSTBY
5V/3.3V
EN
VDDQ OUT
VDDQ
VTT OUT
VDDQ / 2
ON
ON
<VCC MIN
<VCC MIN
X
5V/3.3V
X
VDDQ STBY
0V
0V
0V
0V
OFF
OFF
<VSTBY MIN
0V
Truth Table for CM3131-11
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
4
CM3131
Functional Description (cont’d)
S to R
S0
VCC
3V/3.3V
VSTBY
5V/3.3V
EN
VDDQ OUT
VDDQ
VTT OUT
VDDQ / 2
ON
ON
S1
S2
S3
S4
S5
3V/3.3V
3V/3.3V
<VCC MIN
<VCC MIN
<VCC MIN
5V/3.3V
5V/3.3V
5V/3.3V
5V/3.3V
5V/3.3V
VDDQ
VDDQ / 2
VDDQ / 2
0V
ON
VDDQ
ON
VDDQ STBY
0V
OFF
OFF
0V
0V
0V
Sequencing Matrix for CM3131-11 for Suspend to RAM operation
VCC
VSTBY
SEL
ON
EN
VDDQ OUT VTT OUT
3V/3.3V 5V/3.3V
<VCC MIN 5V/3.3V
ON
ON
ON
ON
VDDQ
VDDQ STBY
0V
VDDQ / 2
0V
OFF
OFF
ON
X
X
0V
<VSTBY MIN
0V
X
X
0V
0V
<VCC MIN
OFF
0V
0V
Truth Table for CM3131-02
Table 3 VCC
VSTBY
SEL
ON
EN
VDDQ OUT VTT OUT
S0
S1
S2
S3
S4
S5
3V/3.3V 5V/3.3V
3V/3.3V 5V/3.3V
3V/3.3V 5V/3.3V
<VCC MIN 5V/3.3V
ON
ON
ON
ON
VDDQ
VDDQ
VDDQ
VDDQ STBY
0V
VDDQ / 2
VDDQ / 2
VDDQ / 2
0V
ON
ON
OFF
ON
<VCC MIN
<VCC MIN
X
X
OFF
OFF
0V
ON
0V
0V
Sequencing Matrix for CM3131-02 for Suspend to RAM operation
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
5
CM3131
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
ESD (Human Body Model)
VCC, VSTBY, DRIVEx
SEL, SENSEx
2000
V
V
V
V
(GND – 0.6) to (+6.5)
(GND – 0.6) to (VCC + 0.6)
(GND – 0.6) to (VCC + 0.6)
VDDQX, VTT
Operating Temperature Range
Ambient
0 to +70
0 to +125
°C
°C
Junction
Storage Temperature Range
-40 to +150
°C
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Temperature Range (Ambient)
0 to +70
°C
1. VDDQ Regulator-Driver
Supply Voltage VCC
Load Current
CCC, CDDQ
2.8 to 3.6
0 to 15
4.7, 220
V
A
µF
2. VTT Regulator
Supply Voltage VDDQ
Load Current
CTT
1.8 or 2.5
0 to +/- 0.9 or +/- 2.0
220
V
A
µF
3, VSTBY Regulator
Supply Voltage VSTBY
Load Current
3.0 to 5.5
0 to 500
V
mA
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
6
CM3131
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL
General Parameters
TOVER Shutdown Junction
Temperature
VDDQ Regulator/Driver Parameters (with FDP6030L or similar MOSFET as an external transistor)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
-
150
-
°C
VCC MIN
Input Voltage
VDDQ = 2.5V, IDDQ = 6A,
each channel, SENSE = 0V
IDDQ = 2.5A, VCC = 3.3V,
SENSE = 0V
VSTBY = 5V, VCC = 3.3V
VSTBY = 3.3V, VCC = 3.3V
VSTBY = 5V, VCC = 3.3V
2.80
V
V
VDDQ
Output Voltage Range
2.45
2.50
9.50
6.1
2.55
VDRIVE H 5
VDRIVE H 3
CLOAD
DRIVE High Output
Voltage
DRIVE High Output
Voltage
External FET Gate
Capacitance
DRIVE Voltage Rise
Time
Load Regulation @
25°C
Line Regulation @ 25°C
V
V
1200
2.5
pF
ms
%
tRISE
VSTBY = 5V, VCC = 3.3V,
CLOAD = 1200pF
VCC = 3.3V, IDDQ = 0.1A to 6A
each channel
VDDQ LOAD
-1.0
-1.0
-
1.0
1.0
VDDQ LINE
IDDQ = 2.5A, VCC = 2.8V to
3.6V
-
%
VTT Regulator Parameters
VTT
Output Voltage Range
VDDQ = 2.50V, ITT = 0A
1.20
-1.0
-1.0
2.3
1.25
1.30
1.0
1.0
V
%
%
A
VTT LOAD
VTT LINE
ITT LIM
ITT SC
Load Regulation @ 25C
Line Regulation @ 25C
Current Limit
Short Circuit Current
Limit
ITT = 0.1A to 2A, VDDQ = 2.5V
ITT = 0A, VCC = 2.8V to 3.6V
-
-
VTT < 1V
0.6
A
VSTBY Regulator Parameters
VDDQ STBY
VDDQSB LD
VDDQ SBLN
Output Voltage Range
IDDQ =150mA, VSTBY = 5V,
SENSE =0V
IDDQ = 10mA to 500mA,
VSTBY = 5V
IDDQ = 150mA,
VSTBY = 3.0V to 5.5V
2.45
-1.0
-1.0
2.50
2.55
1.0
V
Load Regulation @ 25C
Line Regulation @ 25C
-
-
%
%
1.0
VDROPOUT
ISTBY LIM
ISTBY SC
Dropout Voltage
Overload Current Limit
IDDQ = 250mA, each channel
VDDQ < 1V
250
450
mV
mA
mA
400
170
Short Circuit Current
Limit
Note 1: All parameters specified at TA = 0°C to +70°C unless otherwise noted.
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
7
CM3131
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS (Cont’d)
SYMBOL
All Regulators
ICCN
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Normal Mode VCC
Supply Current
Normal mode (S0-S2)
(VDDQ1,2=VDDQ ,VTT=VDDQ/2)
5
µA
µA
µA
µA
ISTBYN
ISTBYS
ISTBYQ
Normal Mode VSTBY
Supply Current
Standby Mode VSTBY
Supply Current
Normal mode (S0-S2)
(VDDQ1,2=VDDQ ,VTT=VDDQ/2)
Standby mode (S3)
(VDDQ1,2=VDDQSTBY ,VTT=0)
1650
550
70
2450
850
120
Shutdown Mode
Quiescent Current
Shutdown mode (S4-S5)
(VDDQ1,2=0 ,VTT=0)
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
8
CM3131
Mechanical Details
8-lead PSOP Package Dimensions
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
9
CM3131
Mechanical Details (cont’d)
14-lead PSOP Package Dimensions
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
10
CM3131-01SH 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
CM3131-02SB | CALMIRCO | Triple Linear Voltage Regulator for DDR-I/-II Memory | 获取价格 | |
CM3131-02SH | CALMIRCO | Triple Linear Voltage Regulator for DDR-I/-II Memory | 获取价格 | |
CM3131-11SB | CALMIRCO | Triple Linear Voltage Regulator for DDR-I/-II Memory | 获取价格 | |
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CM3132-02SB | CALMIRCO | Triple Linear Voltage Regulator for DDR-I Memory and CPU | 获取价格 | |
CM3132-02SH | CALMIRCO | Triple Linear Voltage Regulator for DDR-I Memory and CPU | 获取价格 | |
CM3134AK | APPLIED POWER | SOT-723 | 获取价格 | |
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