J109 [CALOGIC]
N-Channel JFET Switch; N沟道JFET开关
| 型号： | J109 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel JFET Switch |
| 文件： | 总1页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET Switch
CORPORATION
J108 – J110 / SST108 – SST110
FEATURES
APPLICATIONS
Low Cost
Automated Insertion Package
Low Insertion Loss
No Offset or Error Voltages Generated by Closed Switch
Purely Resistive
High Isolation Resistance from Driver
Fast Switching
Low Noise
Analog Switches
Choppers
Commutators
•
•
•
•
•
•
•
Low-Noise Audio Amplifiers
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
•
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC
Operating Temperature Range . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/oC
•
PIN CONFIGURATION
SOT-23
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
G
TO-92
D
ORDERING INFORMATION
S
Part
Package
Temperature Range
J108-110
XJ108-110
SST109-110 Plastic SOT-23
Plastic TO-92
Sorted Chips in Carriers
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC
G
S
D
PRODUCT MARKING (SOT-23)
SST108
SST109
SST110
I08
I09
I10
5018
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
108
109
110
SYMBOL
PARAMETER
UNITS
nA
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS
Gate Reverse Current (Note 1)
Gate-Source Cutoff Voltage
Gate-Source Breakdown Voltage
Drain Saturation Current (Note 2)
Drain Cutoff Current (Note 1)
Drain-Source ON Resistance
Drain-Gate OFF Capacitance
-3
-3
-6
-3
-4
VDS = 0V, VGS = -15V
VDS = 5V, ID = 1µA
VDS = 0V, IG = -1µA
VDS = 15V, VGS = 0V
VDS = 5V, VGS = -10V
VGS(off)
BVGSS
IDSS
-3
-25
80
-10
-2
-25
40
-0.5
-25
10
V
mA
nA
Ω
ID(off)
3
8
3
3
rDS(on)
Cdg(off)
Csg(off)
Cdg(on)
12
15
18
15
VDS ≤0.1V, VGS = 0V
15
VDS = 0,
VGS = -10V
(Note 3)
Source-Gate OFF Capacitance
15
85
15
85
15
85
pF
f = 1MHz
Drain-Gate Plus Source-Gate
V
DS = VGS = 0
(Note 3)
+ Csg(on) ON Capacitance
td(on)
tr
Turn On Delay Time
Rise Time
4
1
6
4
1
6
4
1
6
Switching Time Test
Conditions (Note 3)
J107
J109
1.5V
-7V
J110
1.5V
-5V
ns
td(off)
Turn OFF Delay Time
VDD 1.5V
VGS(off)-12V
tf
Fall Time
30
30
30
RL
150Ω 150Ω 150Ω
NOTES: 1. Approximately doubles for every 10oC increase in TA.
2. Pulse test duration = 300µs; duty cycle ≤3%.
3. For design reference only, not 100% tested.
相关型号：
J109-AMMO
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, FET General Purpose Small Signal
NXP
J109-LF
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, PLASTIC PACKAGE-3
CALOGIC
J109-T/R
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, FET General Purpose Small Signal
NXP
J109-TA
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明