J211 [CALOGIC]
N-Channel JFET; N沟道JFET
| 型号： | J211 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel JFET |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET
CORPORATION
J210 – J212 / SSTJ210 – SSTJ212
FEATURES
DESCRIPTION
Low Noise
Low Leakage
High Power Gain
The J210 Series is an N-Channel JFET single device
encapsulated in a TO-92 plastic package well suited for
automated assembly. The device features low leakage,
typically under 2 pA, low noise, under 10 nano volts per
square hertz at 10 hertz and high gain. This series is
excellent for mixer, oscillators and amplifier applications.
•
•
•
APPLICATIONS
General Purpose Amplifiers
VHF/UHF Amplifiers
Mixers
Oscillators
•
•
ORDERING INFORMATION
•
Part
Package
Temperature Range
•
J210-11
SSTJ210-11 Plastic SOT-23
Plastic TO-92 Package
-55oC to +135oC
-55oC to +135oC
PIN CONFIGURATION
SOT-23
G
TO-92
D
S
G
S
D
PRODUCT MARKING (SOT-23)
CJ1
SSTJ210
SSTJ211
SSTJ212
Z10
Z11
Z12
3
2
1
2
3
DRAIN
SOURCE
GATE
1
BOTTOM VIEW
J210 – J212 / SSTJ210 – SSTJ212
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Condition
Symbol
Limit
Unit
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Power Dissipation
Power Derating
Operating Junction Temperature
Storage Temperature
VGD
VGS
IG
-25
-25
10
360
3.27
V
V
mA
mW
mW/ oC
oC
PD
TJ
Tstg
TL
-55 to 135
-55 to 150
300
oC
Lead Temperature (1/16" from case for 10 seconds)
oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
210
211
212
SYMBOL
CHARACTERISTCS
TYP1
UNIT
TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
STATIC
V(BR)GSS Gate-Source Breakdown Voltage
-35
-25
-1
2
-25
-2.5
7
-25
-4
IG = -1µA, VDS = 0V
VDS = 15V, ID = 1nA
VDS = 15V, VGS = 0V
V
VGS(OFF
IDSS
)
Gate-Source Cut off Voltage
Saturation Drain Current 2
-3
15
-4.5
20
-6
40
15
mA
pA
nA
pA
pA
V
-1
-0.5
-1
-100
-100
-100
VGS = -15V, VDS = 0V
IGSS
Gate Reverse Current
T
A = 125oC
IG
Gate Operating Current
Drain Cutoff Current
VDG = 10V, ID = 1mA
VDS = 10V, VGS = -8V
IG = 1mA, VDS = 0V
ID(OFF)
VGS(F)
1
Gate-Source Forward Voltage
0.7
DYNAMIC
Common-Source Forward
Transconductance
gfs
4
12
6
12
7
12
mS
VDS = 15V, VGS = 0V
f = 1kHz
Common-Source Output
Conductance
gos
150
200
200
µS
Ciss
Crss
Common-Source Input Capacitance
4
VDS = 15V, VGS = 0V
f = 1MHz
pF
Common-Source Reverse
Transfer Capacitance
1.5
V
DS = 15V, VGS = 0V
en
Equivalent Input Noise Voltage
5
nV/ Hz
f = 1kHz
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
相关型号：
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
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