PN4119A [CALOGIC]
N-Channel JFET General Purpose Amplifier; N沟道JFET通用放大器
| 型号： | PN4119A |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel JFET General Purpose Amplifier |
| 文件： | 总1页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET
General Purpose Amplifier
CORPORATION
2N4117 – 2N4119 / 2N4117A – 2N4119A
PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119
FEATURES
PIN CONFIGURATION
Low Leakage
•
Low Capacitance
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
TO-92
TO-72
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +175oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/oC
C
G
G
S
S
D
D
SOT-23
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
G
5007
D
S
ORDERING INFORMATION
PRODUCT MARKING (SOT-23)
Part
Package
Temperature Range
SST4117
SST4118
SST4119
T17
T18
T19
2N4117-19/A Hermetic TO-72
PN4117-19/A Plastic TO-92
SST4117-19 Plastic SOT-23
-55oC to +175oC
-55oC to +135oC
-55oC to +135oC
X2N4117-19/A Sorted Chips in Carriers -55oC to +175oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
4117/A
4118/A
4119/A
SYMBOL
PARAMETER
UNITS
V
TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
-40 -40 -40
BVGSS
Gate-Source Breakdown Voltage
Gate Reverse Current
IG = -1µA, VDS = 0
-10
-1
-10
-1
-10
-1
pA
A devices
A devices
VGS = -20V, VDS = 0
TA = +150oC
IGSS
-25
-2.5
-25
-2.5
-3
-25
-2.5
-6
nA
V
VGS(off)
IDSS
gfs
Gate-Source Pinch-Off Voltage
-0.6 -1.8
-1
-2
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0
0.02 0.09 0.08 0.24 0.20 0.60 mA
70 210 80 250 100 330
Drain Current at Zero Gate Voltage (Note 1)
Common-Source Forward Transconductance (Note 1)
Common-Source Forward Transconductance (Note 2)
Common-Source Output Conductance
VDS = 10V, f = 1kHz
VGS = 0, f = 30MHz
VDS = 10V, VGS = 0, f = 1kHz
µS
gfs
60
70
90
3
3
5
3
10
3
gos
V
DS = 10V, VGS = 0,
f = 1MHz
Ciss
Crss
Common-Source Input Capacitance (Note 2)
pF
V
DS = 10V, VGS = 0,
f = 1MHz
1.5
1.5
1.5
Common-Source Reverse Transfer Capacitance (Note 2)
NOTES: 1. Pulse test: Pulse duration of 2ms used during test.
2. For design reference only, not 100% tested.
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