SD211 [CALOGIC]

High-Speed Analo N-Channel DMOS FETs; 高速Analo N通道DMOS场效应管
SD211
型号: SD211
厂家: CALOGIC, LLC    CALOGIC, LLC
描述:

High-Speed Analo N-Channel DMOS FETs
高速Analo N通道DMOS场效应管

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中文:  中文翻译
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High-Speed Analo  
N-Channel DMOS FETs  
CORPORATION  
SD211 / SD213 / SD215  
FEATURES  
DESCRIPTION  
High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB  
Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm  
Low Feedthrough and Feedback Transients  
Low Capacitance:  
Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.  
Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.  
Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.  
Built-in Protection Diode from Gate to Substrate  
The Calogic SD211 is a 30V analog switch driver with built-in  
protection diode from gate to substrate The SD211 is used  
with SD213 and SD215 DMOS analog switches.  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
SD211E  
XSS211  
Hermetic TO-72 Package  
Sorted Chips in Carriers  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
SD213DE Hermetic TO-72 Package  
XSD213 Sorted Chips in Carriers  
SD215DE Hermetic TO-72 Package  
XSD215 Sorted Chips in Carriers  
APPLICATIONS  
SD211:  
Analog Switch Driver  
SD213 and SD215:  
Analog Switches  
High-Speed Digital Switches  
Multiplexers  
A to D Converters  
D to A Converters  
Choppers  
Sample & Hold  
SCHEMATIC DIAGRAM (Top View)  
BODY AND  
CASE  
SOURCE  
1
2
4
3
TO-72  
GATE  
DRAIN  
C
G
S
D
BODY IS INTERNALLY CONNECTED  
TO THE CASE  
1Q-24  
CD1-1  
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025  
SD211 / SD213 / SD215  
CORPORATION  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Drain-to-Source  
Source-to-Drain  
Drain-to-Body  
Source-to-Body  
SD211  
+30  
SD212  
+10  
SD215  
UNIT  
Vdc  
VDS  
VSD  
VDB  
VSB  
+20  
+20  
+25  
+25  
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Total Device Dissipation at 25oC Case Temperature . . . 1.2W  
Storage Temperatue Range . . . . . . . . . . . . . -65oC to +200oC  
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +125oC  
+10  
+10  
Vdc  
+30  
+15  
Vdc  
+15  
+15  
Vdc  
-15  
+25  
-15  
+25  
-25  
+30  
VGS  
VGB  
VGD  
Gate-to-Source  
Gate-to-Body  
Gate-to-Drain  
Vdc  
Vdc  
Vdc  
-0.3  
+25  
-0.3  
+25  
-0.3  
+30  
-30  
+25  
-15  
+25  
-25  
+30  
DC CHARACTERISTICS (TA = 25oC, unless otherwise specified)  
SD211  
SD213  
SD215  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN TYP MAX MIN TYP MAX MIN TYP MAX  
BREAKDOWN VOLTAGE  
V
GS = VBS = 0V, ID = 10µA  
30  
10  
10  
15  
15  
35  
25  
BVDS  
Drain-to-Source  
10  
10  
15  
15  
25  
20  
20  
25  
25  
25  
VGS = VBS = -5V, IS = 10nA  
V
BVSD  
BVDB  
BVSB  
Source-to Drain  
Drain-to-Body  
Source-to-Body  
VGD = VBD = -5V, ID = 10nA  
VGB = 0V, source OPEN, ID = 10nA  
VGB = 0V, drain OPEN, IS = 10µA  
LEAKAGE CURRENT  
1
1
10  
10  
10  
1
1
10  
10  
10  
V
GS = VBS = -5V, VDS = +10V  
VGS = VBS = -5V, VDS = +20V  
GS = VBD = -5V, VSD = +10V  
IDS (OFF)  
ISD (OFF)  
Drain-to-Source  
1
1
10  
nA  
V
Source-to-Drain  
VGS = VBD = -5V, VSD = +20V  
VDB = VSB = 0V, VGS = ±40V  
VDS = VGS = VT, IS = 1µA, VSB = 0V  
10  
10  
IGBS  
VT  
Gate  
Threshold Voltage  
0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0  
V
50  
30  
23  
19  
70  
45  
50  
30  
23  
19  
70  
45  
50  
30  
23  
19  
17  
70  
45  
ID = 1.0mA, VSB = 0, VGS = +5V  
ID = 1.0mA, VSB = 0, VGS = +10V  
ID = 1.0mA, VSB = 0, VGS = +15V  
ID = 1.0mA, VSB = 0, VGS = +20V  
ID = 1.0mA, VSB = 0, VGS = +25V  
Drain-to-Source  
Resistance  
r
DS (ON)  
AC ELECTRICAL CHARACTERISTICS  
SD211  
SD213  
SD215  
SYMBOL  
gfs  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN TYP MAX MIN TYP MAX MIN TYP MAX  
Forward  
Transconductance  
V
I
DS = 10V, VSB = 0V,  
D = 20mA, f = 1kHz  
10  
15  
10  
15  
10  
15  
ms  
SMALL SIGNAL CAPACITANCES  
CISS  
Gate Node  
Drain Node  
Source Node  
2.4 3.5  
1.3 1.5  
0.3 0.5  
2.4 3.5  
1.3 1.5  
0.3 0.5  
2.4 3.5  
1.3 1.5  
0.3 0.5  
V
V
DS = 10V, f = 1MHz  
GS = VBS = -15V  
pF  
COSS  
CRSS  
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other  
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.  
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025  

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