SD312DE [CALOGIC]
High-Speed Analog N-Channel DMOS FETs Improved On -Resistance; 高速模拟N通道DMOS FET的好转-Resistance
| 型号： | SD312DE |
| 厂家： | 
CALOGIC, LLC |
| 描述： | High-Speed Analog N-Channel DMOS FETs Improved On -Resistance |
| 文件： | 总3页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High-Speed Analog
N-Channel DMOS FETs
Improved On -Resistance
CORPORATION
SD310 / SD312 / SD314
FEATURES
DESCRIPTION
High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB
Low On Resistance . . . . . . . . . . . . . . . . . 15 Ohms @ 15V
Low Feedthrough and Feedback Transients
Low Capacitance:
— Input (Gate) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.
— Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
— Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.
No Protection Diode from Gate to Substrate for very
high impedance applications
The Calogic SD310 is a 30V analog switch driver without a
built-in protection diode from gate to substrate for use with
SD312 and SD314 DMOS analog switches.
•
•
•
•
The SD312 is a high performance, high-speed, high-voltage,
and low resistance analog switch capable of switching ±5V
signals. The maximum threshold of 2V permits simple direct
TTL an CMOS driving for small applications.
•
•
The SD314 is DMOS analog switch capable of switching
±10V analog signals with all other parameters identical to
those of SD312.
Maximum Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . ±40V
APPLICATIONS
All three devices are manufactured with an implanted
high-speed, high-voltage, and low resistance double-diffused
MOS (DMOS) process. SD310, SD312 and SD314 devices
also have no built-in protection diode to enhance performance
in high impedance circuits. The devices are available in
4-lead hermetic TO-72 package and in die form for hybrid
applications. Custom devices based on SD310, SD312 and
SD314 can also be ordered.
SD310:
Analog Switch Driver
•
SD312 and SD314:
Analog Switches
High-Speed Digital Switches
Multiplexers
A to D Converters
D to A Converters
Choppers
Sample & Hold
•
•
•
•
•
ORDERING INFORMATION
•
•
Part
Package
Temperature Range
SD310DE Hermetic TO-72 Package
SD312DE Hermetic TO-72 Package
SD314DE Hermetic TO-72 Package
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
XSD310
XSD312
XSD314
Sorted Chips in Carriers
Sorted Chips in Carriers
Sorted Chips in Carriers
SCHEMATIC DIAGRAM (Top View)
BODY
AND
CASE
SOURCE
1
2
4
3
TO-72
DRAIN
GATE
C
G
S
D
Body is internally connected to the case
CD10-2
SD310 / SD312 / SD314
CORPORATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SD310 SD312 SD314 UNIT
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25oC Case Temperature . . . 1.2W
Storage Temperature Range . . . . . . . . . . . . . . -65o to +200oC
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300oC
Operating Temperature Range . . . . . . . . . . . -55oC to +125oC
VDS
VSD
VDB
VSB
VGS
VGB
VGD
Drain-to-source
+30
+10
+10
+15
+15
±40
±40
±40
+20
+20
+25
+25
±40
±40
±40
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Source-to-drain* +10
Drain-to-body
Source-to-body
Gate-to-source
Gate-to-body
Gate-to-drain
+30
+15
±40
±40
±40
DC ELECTRICAL CHARACTERISTICS (TA = 25oC, unless other specified.)
SD310
SD312
SD314
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
V
GS = VBS = 0V, ID = 10µA
30
10
10
15
15
35
25
BVDS
Drain-to-source
10
10
15
15
25
20
20
25
25
25
VGS = VBS = -5V, IS = 10nA
V
BVSD
BVDB
BVSB
Source-to drain
Drain-to-body
Source-to-body
VGD = VBD = -5V, ID = 10nA
VGB = 0V, source OPEN, ID = 10nA
VGB = 0V, drain OPEN, IS = 10µA
LEAKAGE CURRENT
1
1
10
10
1
1
10
10
V
GS = VBS = -5V, VDS = +10V
VGS = VBS = -5V, VDS = +20V
GS = VBD = -5V, VSD = +10V
IDS (OFF)
ISD (OFF)
Drain-to-source
1
1
10
nA
V
Source-to-drain
VGS = VBD = -5V, VSD = +20V
VDB = VSB = 0V, VGS = ±40V
VDS = VGS = VT, IS = 1µA, VSB = 0V
10
IGBS
VT
Gate
0.1
0.1
0.1
Threshold voltage
0.5 1.0 2.0 0.5 1.0 2.0 0.5 1.0 2.0
V
I
D = 1.0mA, VSB = 0, VGS = +5V
30
20
15
50
35
25
30
20
15
50
35
30
20
15
50
35
Drain-to-source
resistance
rDS (ON)
Ω
ID = 1.0mA, VSB = 0, VGS = +10V
ID = 1.0mA, VSB = 0, VGS = +15V
AC ELECTRICAL CHARACTERISTICS
SD310
SD312
SD314
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Forward
transconductance
VDS = 10V, VSB = 0V, ID = 20mA,
f = 1kHz
gfs
15
20
15
20
15
20
mmhos
SMALL SIGNAL CAPACITANCES (See capacitance model)
C(GS+GD+GB) Gate node
2.4 3.7
1.3 1.7
3.5 4.5
0.3 0.7
2.4 3.7
1.3 1.7
3.5 4.5
0.3 0.7
2.4 3.7
1.3 1.7
3.5 4.5
0.3 0.7
C(GD+DB)
C(GS+SB)
CDG
Drain node
VDS = 10V, f = 1MHz
pF
VGS = VBS = -15V
Source node
Reverse transfer
SD310 / SD312 / SD314
CORPORATION
Package Dimensions TO-72
.230
.209
(5.84)
(5.31)
.195
.178
(4.95)
(4.53)
.210
.170
(5.33)
(4.32)
.030
(.76)
4 LEADS
.500
(12.70)
.021
.016
(.53)
(.41)
.100
.046
.036
(1.16)
(.91)
(2.54)
0.50
(1.27)
45o
BOTTOM VIEW
.048
.028
(1.21)
(.72)
TO-72
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