SD403CY [CALOGIC]

High Speed DMOS N-Channel Switch; 高速DMOS N沟道开关
SD403CY
型号: SD403CY
厂家: CALOGIC, LLC    CALOGIC, LLC
描述:

High Speed DMOS N-Channel Switch
高速DMOS N沟道开关

开关
文件: 总3页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
High Speed DMOS  
N-Channel Switch  
CORPORATION  
SD403  
FEATURES  
DESCRIPTION  
Ultra High Speed Switching . . . . . . . . . . . . . . . . . tr < 1ns  
Very Low Capacitance. . . . . . . . . . . . . . crss 0.4pf typical  
CMOS and TTL Compatible Input  
Low ON Resistance. . . . . . . . . . . . . . . . . 40 ohms typical  
The Calogic SD403 is an N-Channel Enhancement-Mode  
Lateral DMOS FET. This product has very low capacitance,  
(crss < 0.4pf typical) allowing for high speed switching (tr 1ns).  
The SD403 is a high gain device (19mmhos) and has good  
performance values for sample and hold circuits, video  
switches and switch drivers where lower capacitance and high  
speed switching are critical.  
APPLICATIONS  
Switch Drivers  
Video Switches  
Samples and Hold  
Track and Hold  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
VHF/UHF Amplifiers  
-55 to +125oC  
-55 to +125oC  
-55 to +125oC  
SD403BD Plastic TO-92  
SD403CY SOT-143 Surface Mount  
XSD403  
Sorted Chips in Carriers  
PIN CONFIGURATION  
SCHEMATIC DIAGRAM  
DRAIN  
(2)  
TO-92  
GATE  
(3)  
SOURCE  
(1)  
D
TO-92  
G
S
CD1-1  
GATE (3)  
DRAIN  
(2)  
DRAIN (2)  
BODY  
(4)  
GATE  
(3)  
BODY (4)  
SOT-143  
SOURCE (1)  
SOURCE  
(1)  
PRODUCT MARKING  
SD403CY SD403  
SOT-143  
SD403  
CORPORATION  
ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise noted)  
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V  
+20V  
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Power Dissipation (at or below TA = +25oC) . . . . . . . . 300mW  
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC  
Operating Junction and Storage  
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V  
+20V  
Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC  
Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V  
ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise specified)  
SYMBOL  
STATIC  
BVDSS  
CHARACTERISTICS  
MIN  
TYP  
MAX  
UNIT  
TEST CONDITIONS  
Drain-Source Breakdown Voltage  
Drain-Source OFF Leakage Current  
Gate-Source Leakage Current  
Drain-Source ON Current  
15  
25  
V
µA  
ID = 1.0µA, VGS =0  
ID(OFF)  
1.0  
1.0  
VDS = 15V, VGS = 0  
IGSS  
µA  
VGS = 20V, VDS = 0  
ID(ON)  
80  
120  
mA  
V
VDS = 10V, VGS = 10 V Pulse Test  
ID = 1.0µΑ, VDS = VGS  
VGS(th)  
Gate-Source Threshold Voltage  
Drain-Source ON Voltage  
0.3  
1.5  
175  
175  
60  
VDS(ON)  
rDS(ON)  
VDS(ON)  
rDS(ON)  
DYNAMIC  
140  
140  
40  
mV  
ohms  
mV  
ohms  
ID = 1mA, VGS = 2.4V  
ID = 1mA, VGS = 4.5V  
Drain-Source ON Resistance  
Drain-Source ON Voltage  
Drain-Source ON Resistance  
40  
60  
ID = 20mA VDS = 10V,  
f = 1KHz  
gfs  
Common-Source Forward Transconductance  
15  
19  
mS  
pf  
Pulse Test  
ciss  
Common-Source Input Capacitance  
Common-Source Output Capacitance  
Common-Source Reverse Transfer Capacitance  
Turn ON Delay Time  
4.5  
2.0  
0.4  
0.8  
0.9  
1.4  
6.0  
3.0  
0.6  
1.2  
1.2  
VDS = 10V, VGS = 0  
coss  
crss  
f = 1MHz  
td(on)  
tr  
VDD = 10V, RL = 680Ω  
ns  
VG(ON) = 10V, RG = 51Ω  
Rise Time  
CL = 1.5pF  
t(OFF)  
Turn OFF Time  
SWITCHING TIMES TEST CIRCUIT  
TEST WAVEFORMS  
V
DD  
V
G(on)  
90%  
R
V
L
in  
10%  
V
OUT  
0
t
t
off  
d(on)  
INPUT PULSE  
<_  
V
G
t
on  
t
t
fall  
t
0.5 nSEC  
r
510  
R
G
PULSE WIDTH - 100 nSEC  
r
t
d(off)  
V
DD  
SAMPLING OSCILLOSCOPE  
90%  
90%  
t
< 0.36 nSEC  
r
V
out  
51  
R
C
> 1M  
< 2.0 pF  
in  
in  
10%  
10%  
~
~
0V  
OSCILLOSCOPE  
SD403  
CORPORATION  
TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25oC unless otherwise noted)  
ON DRAIN CURRENT  
-VS-  
DRAIN-SOURCE ON RESISTANCE  
-VS-  
GATE-SOURCE VOLTAGE  
GATE-SOURCE VOLTAGE  
175  
200  
160  
120  
80  
V
= 10V  
DS  
I
= 1.0mA  
D
PULSE TEST  
80 Sec  
1% Duty Cycle  
150  
125  
100  
75  
µ
T
= +25oC  
A
T
= +125oC  
I
7.5mA  
D'Z'  
40  
50  
0
4.0  
6.0  
8.0  
10  
= +125oC  
2.0  
T
A
V
GS  
-Gate-Source Voltage (Volts)  
25  
T
= +25oC  
6.0  
A
FORWARD TRANSCONDUCTANCE  
-VS-  
0
2.0  
4.0  
8.0  
10  
V
-Gate-Source Voltage (Volts)  
GS  
ON DRAIN CURRENT  
35  
30  
25  
20  
15  
10  
5.0  
V
= 10V  
DS  
f = 1KHz  
PULSE TEST  
80 Sec  
1% Duty Cycle  
µ
T
= +25oC  
A
T
= +125oC  
0
10  
20  
30  
40  
50  
60  
70  
I
-Drain Current (mA)  
D

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