SST201 [CALOGIC]
N-Channel JFET General Purpose Amplifier; N沟道JFET通用放大器
| 型号： | SST201 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel JFET General Purpose Amplifier |
| 文件： | 总1页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET
General Purpose Amplifier
CORPORATION
J201 – J204 / SST201 – SST204
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
High Input Impedance
Low IGSS
•
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC
Operating Temperature Range . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
•
PIN CONFIGURATION
SOT-23
G
TO-92
D
S
ORDERING INFORMATION
PRODUCT MARKING (SOT-23)
Part
Package
Temperature Range
SST201
SST202
SST203
SST204
A01
A02
A03
A04
G
-55oC to +135oC
S
D
J201-204
SST201-204 Plastic SOT-23
For Sorted Chips in Carriers see 2N4338 series.
Plastic TO-92
-55oC to +135oC
5010
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
201
202
203
204
SYMBOL
PARAMETER
UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gate Reverse Current
(Note 1)
IGSS
-100
-100
-100
-100
-2.0
pA
V
V
DS = 0, VGS = -20V
Gate-Source Cutoff
Voltage
VGS(off)
BVGSS
IDSS
IG
-0.3
-40
0.2
-1.5 -0.8
-40
-4.0 -2.0
-40
-10.0 -0.3
-25
VDS = 20V, ID = 10nA
Gate-Source Breakdown
Voltage
VDS = 0, IG = -1µA
Saturation Drain Current
(Note 2)
1.0 0.9
4.5 4.0
20
0.2 1.2 3.0
-10
mA
pA
V
DS = 20V, VGS = 0
Gate Current (Note 1)
-10
-10
-10
VDG = 20V, ID = IDSS(min)
Common-Source Forward
Transconductance (Note 2)
gfs
500
1,000
1,500
500 1,500
µs
f = 1kHz
Common-Source Output
Conductance
gos
Ciss
Crss
en
1
4
1
5
3.5
4
10
4
2.5
4
V
V
DS = 20V,
GS = 0
Common-Source Input
Capacitance
f = 1MHz
(Note 3)
pF
Common-Source Reverse
Transfer Capacitance
1
1
1
nV
√Hz
Equivalent Short-Circuit
Input Noise Voltage
VDS = 10V, f = 1kHz
GS = 0 (Note 3)
5
5
10
V
NOTES: 1. Approximately doubles for every 10oC increase in TA.
2. Pulse test duration = 2ms.
3. For design reference only, not 100% tested.
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