VN2222LM [CALOGIC]
N-Channel Enhancement-Mode MOS Transistors; N沟道增强型MOS晶体管
| 型号： | VN2222LM |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel Enhancement-Mode MOS Transistors |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN2222 Series
N-Channel Enhancement-Mode
MOS Transistors
CORPORATION
VN2222 Series
FEATURES
ORDERING INFORMATION
Low rDS(on) <7.5Ω
Part
Package
Temperature Range
•
VN2222LL
VN2222LM
For sorted chips in carriers see 2N7000
Plastic TO-92
Plastic TO-237
-55oC to +150oC
APPLICATIONS
-55oC to +150oC
Switching
Amplification
•
•
PIN CONNECTIONS
BOTTOM VIEW
BOTTOM VIEW
3
1
TO-92
(TO-226AA)
TO-237
1
2
3
1 2 3
1. SOURCE
2. GATE
3. DRAIN
1. SOURCE
2. GATE
3. TAB-DRAIN
2
CD5
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
LIMITS
SYMBOL
PARAMETERS/TEST CONDITIONS
UNITS
VN2222LL
60
VN2222LM
VDS
VGS
Drain-Source Voltage
60
±30
0.26
0.16
1
V
A
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
±30
T
A = 25oC
TA = 100oC
0.23
0.14
1
ID
IDM
PD
T
A = 25oC
TA = 100oC
0.8
1
W
0.32
0.4
TJ, Tstg
TL
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
-55 to 150
300
oC
THERMAL RESISTANCE RATINGS
LIMITS
SYMBOL
THERMAL RESISTANCE
UNITS
VN2222LL
VN2222LM
RthJA
Junction-to-Ambient
156
125
K/W
1Pulse width limited by maximum junction temperature.
VN2222 Series
CORPORATION
SPECIFICATIONSa
SYMBOL
LIMITS
PARAMETER
TYPb
MIN
MAX
UNIT
TEST CONDITIONS
STATIC
V(BR)DSS
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
70
60
ID = 100µA, VGS = 0V
V
2.3
0.6
2.5
±100
10
VDS = VGS, ID = 1mA
nA
VGS = ±20V, VDS = 0V
VDS = 48V, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentc
µA
500
TJ = 125oC
ID(ON)
1000
5
750
100
mA
VDS = 10V, VGS = 10V
VGS = 5V, ID = 0.2A
7.5
7.5
rDS(ON)
Drain-Source On-Resistancec
Ω
2.5
VGS = 10V, ID = 0.5A
4.4
13.5
TJ = 125oC
gFS
Forward Transconductancec
230
1200
mS
VDS = 10V, ID = 0.5A
VDS = 10V, ID = 0.2A
gOS
Common Source Output Conductancec
µS
DYNAMIC
Ciss
Input Capacitance
16
11
2
60
25
5
pF
ns
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING
VDD = 15V, RL = 23Ω, ID = 0.6A
tON
Turn-On Time
Turn-Off Time
7
7
10
10
VGEN = 10V, RG = 25Ω
(Switching time is essentially independent of
operating temperature)
tOFF
Notes:
a. TA = 25oC unless otherwise noted.
b. For design aid only, not subject to production testing.
c. Pulse test; PW = ≤300µS, duty cycle ≤2%.
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