CAT25010VI-1.8-GT3 [CATALYST]
EEPROM, 128X8, Serial, CMOS, PDSO8, 0.150 INCH, GREEN, MS-012, SOIC-8;
| 型号： | CAT25010VI-1.8-GT3 |
| 厂家： | 
CATALYST SEMICONDUCTOR |
| 描述： | EEPROM, 128X8, Serial, CMOS, PDSO8, 0.150 INCH, GREEN, MS-012, SOIC-8 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟 光电二极管 内存集成电路 |
| 文件： | 总17页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CAT25010, CAT25020, CAT25040
1K/2K/4K SPI Serial CMOS EEPROM
FEATURES
DESCRIPTION
I 10 MHz SPI compatible
The CAT25010/20/40 is a 1K/2K/4K Bit SPI Serial
CMOS EEPROM internally organized as 128x8/256x8/
512x8 bits. Catalyst’s advanced CMOS Technology
substantially reduces device power requirements. The
CAT25010/20/40 features a 16-byte page write buffer.
The device operates via the SPI bus serial interface and
is enabled though a Chip Select (CS). In addition to the
Chip Select, the clock input (SCK), data in (SI) and data
out (SO) are required to access the device. The HOLD
pin may be used to suspend any serial communication
without resetting the serial sequence. The CAT25010/
20/40 is designed with software and hardware write
protectionfeaturesincludingBlockWriteprotection.The
device is available in 8-pin DIP, 8-pin SOIC and 8-pin
TSSOP packages.
I 1.8 to 5.5 volt operation
I 16-byte page write buffer
I Hardware and software protection
I Block write protection
– Protect 1/4, 1/2 or all of EEPROM array
I Low power CMOS technology
I SPI modes (0,0 & 1,1)
I Industrial temperature range
I 1,000,000 program/erase cycles
I 100 year data retention
I Self-timed write cycle
I RoHS compliant “
” & “
”
8-pin PDIP, SOIC and TSSOP packages
PIN CONFIGURATION
FUNCTIONAL SYMBOL
PDIP (L)
SOIC (V)
TSSOP (Y)
V
CC
CS
1
8
V
CC
SI
CS
SO
2
3
4
7
6
5
HOLD
SCK
SI
CAT25010
CAT25020
CAT25040
WP
WP
SO
V
SS
HOLD
SCK
PIN FUNCTIONS
Pin Name
SO
Function
V
SS
Serial Data Output
Serial Clock
SCK
WP
Write Protect
VCC
+1.8V to +5.5V Power Supply
Ground
VSS
CS
Chip Select
SI
Serial Data Input
Suspends Serial Input
HOLD
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
1
CAT25010, CAT25020, CAT25040
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature
-65°C to +150°C
Voltage on Any Pin with Respect to Ground(1)
-0.5 V to +6.5 V
* Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification
is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
RELIABILITY CHARACTERISTICS(2)
Symbol
NEND(*)
TDR
Parameter
Min
1,000,000
100
Units
Program/ Erase Cycles
Years
Endurance
Data Retention
(*) Page Mode, VCC = 5 V, 25°C
D.C. OPERATING CHARACTERISTICS
VCC = 1.8 V to 5.5 V, TA = -40°C to 85°C, unless otherwise specified.
Symbol Parameter
Test Conditions
Min
Max
Units
ICC
ISB1
ISB2
Supply Current
Read, Write, VCC = 5.0V, fSCK = 10MHz,
SO open
2
mA
Standby Current
VIN = GND or VCC , CS = VCC , WP = VCC
VCC = 5V
,
2
4
µA
µA
Standby Current
VIN = GND or VCC , CS = VCC , WP = GND,
VCC = 5V
IL
Input Leakage Current
VIN = GND or VCC
-2
-1
2
1
µA
µA
V
ILO
Output Leakage Current CS = VCC , VOUT = GND or VCC
Input Low Voltage
(3)
VIL
VIH
-0.5
0.3VCC
(3)
Input High Voltage
0.7VCC VCC + 0.5
V
VOL1
VOH1
VOL2
VOH2
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
VCC > 2.5V, IOL = 3.0mA
VCC > 2.5V, IOH = -1.6mA
VCC > 1.8V, IOL = 150µA
VCC > 1.8V, IOH = -100µA
0.4
VCC - 0.8V
0.2
V
V
V
VCC - 0.2V
V
PIN CAPACITANCE(2)
TA = 25°C, f = 1 MHz, VCC = 5V
Symbol
Test Conditions
Max
Conditions
Units
pF
pF
COUT
Output Capacitance (SO)
8
VOUT = 0 V
CIN
Input Capacitance (CS, SCK, SI, WP, HOLD)
6
VIN = 0 V
Note:
(1) The DC input voltage on any pin should not be lower than -0.5V or higher than VCC + 0.5V. During transitions, the voltage on any pin may
undershoot to no less than -1.5 V or overshoot to no more than VCC + 1.5V, for periods of less than 20ns.
(2) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(3) VIL and VIH are reference values and are not tested.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
2
CAT25010, CAT25020, CAT25040
A.C. CHARACTERISTICS
SYMBOL PARAMETER
CAT250XX-1.8
1.8V-5.5V
CAT250XX
2.5V-5.5V
Test
Min.
30
Max.
Min.
Max.
Conditions UNITS
tSU
tH
Data Setup Time
Data Hold Time
20
20
40
40
DC
ns
ns
30
tWH
tWL
fSCK
tLZ
SCK High Time
75
ns
SCK Low Time
75
ns
Clock Frequency
HOLD to Output Low Z
Input Rise Time
DC
5
50
2
10
50
2
MHz
ns
(1)
tRI
µs
(1)
tFI
Input Fall Time
2
2
µs
tHD
tCD
HOLD Setup Time
HOLD Hold Time
Write Cycle Time
Output Valid from Clock Low
Output Hold Time
Output Disable Time
HOLD to Output High Z
CS High Time
0
0
ns
10
10
ns
C = 50pF
(4)
L
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tV
5
5
(note 2)
75
40
tHO
0
0
tDIS
tHZ
50
20
25
100
tCS
50
50
50
10
10
15
15
15
10
10
tCSS
tCSH
tWPS
tWPH
CS Setup Time
CS Hold Time
WP Setup Time
WP Hold Time
(1)(3)
Power-Up Timing
Symbol
tPUR
Parameter
Max.
Units
Power-up to Read Operation
Power-up to Write Operation
1
1
ms
ms
tPUW
NOTE:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) AC Test Conditions:
Input Pulse Voltages: 0.3V to 0.7V
CC
CC
Input rise and fall times: ≤10ns
Input and output reference voltages: 0.5V
CC
Output load: current source IOL max/IOH max; C =50pF
L
(3)
(4)
t
t
and t
are the delays required from the time V is stable until the specified operation can be initiated.
PUR
WC
PUW CC
is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
3
CAT25010, CAT25020, CAT25040
FUNCTIONAL DESCRIPTION
PIN DESCRIPTION
The CAT25010/20/40 supports the SPI bus data
transmissionprotocol.ThesynchronousSerialPeripheral
Interface (SPI) helps the CAT25010/20/40 to interface
directly with many of today’s popular microcontrollers.
The CAT25010/20/40 contains an 8-bit instruction
register. (The instruction set and the operation codes
are detailed in the instruction set table)
SI: Serial Input
SI is the serial data input pin. This pin is used to input all
opcodes, byte addresses, and data to be written to the
CAT25010/20/40. Input data is latched on the rising
edge of the serial clock for SPI modes (0, 0 & 1, 1).
SO: Serial Output
SO is the serial data output pin. This pin is used to
transfer data out of the CAT25010/20/40. During a read
cycle, data is shifted out on the falling edge of the serial
clock for SPI modes (0,0 & 1,1).
After the device is selected with CS going low, the first
byte will be received. The part is accessed via the SI pin,
with data being clocked in on the rising edge of SCK.
Thefirstbytecontainsoneofthesixop-codesthatdefine
the operation to be performed.
Figure 1. Sychronous Data Timing
t
CS
VIH
CS
VIL
t
CSH
t
CSS
VIH
VIL
t
t
WL
SCK
SI
WH
t
t
H
SU
VIH
VALID IN
V
IL
t
RI
FI
t
t
V
t
t
HO
DIS
VOH
VOL
HI-Z
HI-Z
SO
Note: Dashed Line= mode (1, 1) – – – – –
INSTRUCTION SET
Instruction
WREN
WRDI
Opcode
Operation
0000 0110
0000 0100
0000 0101
0000 0001
0000 X011
0000 X010
Enable Write Operations
Disable Write Operations
Read Status Register
Write Status Register
Read Data from Memory
Write Data to Memory
RDSR
WRSR
READ
(1)
(1)
WRITE
Note:
(1) X=0 for CAT25010, CAT25020. X=A8 for CAT25040
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
4
CAT25010, CAT25020, CAT25040
SCK: Serial Clock
WP: Write Protect
SCKistheserialclockpin.Thispinisusedtosynchronize
the communication between the microcontroller and the
CAT25010/20/40. Opcodes, byte addresses, or data
presentontheSIpinarelatchedontherisingedgeofthe
SCK. Data on the SO pin is updated on the falling edge
of the SCK for SPI modes (0,0 & 1,1) .
WP is the Write Protect pin. The Write Protect pin will
allow normal read/write operations when held high.
When WP is tied low all write operations are inhibited.
WP held low while CS is low will interrupt a write to the
CAT25010/20/40. If the internal write cycle has already
been initiated, WP going low will have no effect on any
write operation. Figure 10 illustrates the WP timing
sequence during a write operation.
CS: Chip Select
CSistheChipselectpin.CSlowenablestheCAT25010/
20/40 and CS high disables the CAT25010/20/40. CS
high takes the SO output pin to high impedance and
forces the devices into a Standby Mode (unless an
internal write operation is underway). A high to low
transition on CS is required prior to any sequence being
initiated. A low to high transition on CS after a valid write
sequence is what initiates an internal write cycle.
HOLD: Hold
The HOLD pin is used to pause transmission to the
CAT25010/20/40whileinthemiddleofaserialsequence
without having to re-transmit entire sequence at a later
time. To pause, HOLD must be brought low while SCK
is low. The SO pin is in a high impedance state during
thetimethepartispaused, andtransitionsontheSIpins
will be ignored. To resume communication, HOLD is
brought high, while SCK is low. (HOLD should be held
highanytimethisfunctionisnotbeingused.) HOLDmay
be tied high directly to VCC or tied to VCC through a
resistor. Figure 9 illustrates hold timing sequence.
STATUS REGISTER
7
1
6
1
5
1
4
1
3
2
1
0
BP1
BP0
WEL
RDY
BLOCK PROTECTION BITS
Status Register Bits
Array Address
Protected
None
Protection
BP1
0
BP0
0
No Protection
0
1
CAT25010: 60-7F
CAT25020: C0-FF
CAT25040: 180-1FF
Quarter Array Protection
Half Array Protection
Full Array Protection
1
1
0
1
CAT25010: 40-7F
CAT25020: 80-FF
CAT25040: 100-1FF
CAT25010: 00-7F
CAT25020: 00-FF
CAT25040: 000-1FF
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
5
CAT25010, CAT25020, CAT25040
STATUS REGISTER
DEVICE OPERATION
Write Enable and Disable
The Status Register indicates the status of the device.
The RDY (Ready) bit indicates whether the CAT25010/
20/40 is busy with a write operation. When set to 1 a
write cycle is in progress and when set to 0 the device
indicates it is ready. This bit is read only.
TheCAT25010/20/40containsawriteenablelatch. This
latch must be set before any write operation. The device
powers up in a write disable state when Vcc is applied.
WREN instruction will enable writes (set the latch) to the
device. If WP pin is held low, the write enable latch is
reset to the write disabe state, regardless of the WREN
Instruction. WRDI instruction will disable writes (reset
the latch) to the device. Disabling writes will protect the
device against inadvertent writes.
The WEL (Write Enable) bit indicates the status of the
write enable latch. When set to 1, the device is in a Write
Enable state and when set to 0 the device is in a Write
Disablestate. TheWELbitcanonlybesetbytheWREN
instruction and can be reset by the WRDI instruction.
READ Sequence
The BP0 and BP1 (Block Protect) bits indicate which
blocks are currently protected. These bits are set by the
user issuing the WRSR instruction. The user is allowed
to protect quarter of the memory, half of the memory or
the entire memory by setting these bits. Once protected,
the user may only read from the protected portion of the
array. These bits are non-volatile.
The part is selected by pulling CS low. The 8-bit read
instructionistransmittedtotheCAT25010/20/40,followed
by the 8-bit address for CAT25010/20/40 (for the 25040,
bit 3 of the read data instruction contains address A8).
After the correct read instruction and address are sent,
the data stored in the memory at the selected address is
shifted out on the SO pin. The data stored in the memory
atthenextaddresscanbereadsequentiallybycontinuing
Figure 2. WREN Instruction Timing
CS
SCK
1
1
0
SI
0
0
0
0
0
HIGH IMPEDANCE
SO
Note: Dashed Line = mode (1, 1) – – – – –
Figure 3. WRDI Instruction Timing
CS
SCK
SI
1
0
0
0
0
0
0
0
HIGH IMPEDANCE
SO
Note: Dashed Line = mode (1, 1) – – – – –
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
6
CAT25010, CAT25020, CAT25040
to provide clock pulses. The internal address pointer is
automatically incremented to the next higher address
after each byte of data is shifted out. When the highest
address is reached, the address counter rolls over to
0000hallowingthereadcycletobecontinuedindefinitely.
The read operation is terminated by pulling the CS high.
Read sequece is illustrated in Figure 4.
is illustrated in Figure 5.
WRITE Sequence
The CAT25010/20/40 powers up in a Write Disable
state.Priortoanywriteinstructions,theWRENinstruction
must be sent to CAT25010/20/40. The device goes into
Write enable state by pulling the CS low and then
clocking the WREN instruction into CAT25010/20/40.
TheCSmustbebroughthighaftertheWRENinstruction
to enable writes to the device. If the write operation is
initiated immediately after the WREN instruction without
CS being brought high, the data will not be written to the
To read the status register, RDSR instruction should be
sent. The contents of the status register are shifted out
on the SO line. The status register may be read at any
time even during a write cycle. Reading status register
Figure 4. Read Instruction Timing
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
SCK
BYTE ADDRESS
A7 A6 A5 A4 A3 A2 A1 A0
OPCODE
SI
0
0
0
0
X
*
0
1
1
DATA OUT
HIGH IMPEDANCE
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
*Please check the instruction set table for address
X=0 for 25010, 25020 ; X=A8 for 25040
Note: Dashed line = mode (1,1)----
Figure 5. RDSR Instruction Timing
CS
0
1
2
3
4
5
1
6
0
7
1
8
9
10
11
12
13
14
SCK
OPCODE
0
0
0
0
0
SI
DATA OUT
HIGH IMPEDANCE
SO
5
7
6
4
3
2
1
0
MSB
Note: Dashed Line= mode (1, 1) – – – – –
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
7
CAT25010, CAT25020, CAT25040
device is ready for the next instruction
array because the write enable latch will not have been
properly set. Also, for a successful write operation the
address of the memory location(s) to be programmed
must be outside the protected address field location
selected by the block protection level.
Page Write
The CAT25010/20/40 features page write capability.
After the initial byte, the host may continue to write up to
16 bytes of data to the CAT25010/20/40. After each
byte of data received, lower order address bits are
internally incremented by one; the high order bits of
address will remain constant. The only restriction is that
the X (X=16 for CAT25010/20/40) bytes must reside on
the same page. If the address counter reaches the end
of the page and clock continues, the counter will “roll
over” to the first address of the page and overwrite any
data that may have been written. The CAT25010/20/40
is automatically returned to the write disable state at the
completion of the write cycle. Figure 8 illustrates the
page write sequence.
Byte Write
Once the device is in a Write Enable state, the user may
proceed with a write sequence by setting the CS low,
issuing a write instruction via the SI line, followed by the
8-bit address for 25010/20/40 (for the 25040, bit 3 of the
readdatainstructioncontainsaddressA8). Programming
will start after the CS is brought high. Figure 6 illustrates
byte write sequence.
During an internal write cycle, all commands will be
ignored except the RDSR (Read Status Register)
instruction.
Status Register Write
TheStatusRegistercanbereadtodetermineifthewrite
cycle is still in progress. If Bit 0 of the Status Register is
set at 1, write cycle is in progress. If Bit 0 is set at 0, the
To write to the status register, the WRSR instruction
should be sent. Only Bit 2 and Bit 3 of the status register
can be written using the WRSR instruction. Figure 7
illustrates the sequence of writing to status register.
Figure 6. Write Instruction Timing
CS
0
1
2
3
4
5
6
7
8
13 14 15 16 17 18 19 20 21 22 23
SCK
SI
OPCODE
BYTE ADDRESS
DATA IN
X*
D7 D6 D5 D4 D3 D2 D1 D0
A0
0
0
0
0
0
1
0
A7
HIGH IMPEDANCE
SO
Note: Dashed Line= mode (1, 1) – – – – –
*X=0 for 25010, 25020 ; X=A8 for 25040
Figure 7. WRSR Timing
CS
0
1
2
3
4
5
6
7
1
8
9
6
10
5
11
4
12
13
2
14
1
15
0
SCK
OPCODE
DATA IN
SI
0
0
0
0
0
0
0
7
3
MSB
HIGH IMPEDANCE
SO
Note: Dashed Line= mode (1, 1) – – – – –
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
8
CAT25010, CAT25020, CAT25040
DESIGN CONSIDERATIONS
The CAT25010/20/40 powers up in a write disable
state and in a low power standby mode. A WREN
instruction must be issued to perform any writes to the
device after power up. After power up, CS must be
brought low to enter a ready state and receive an
instruction. After a successful byte/page write or status
register write, the CAT25010/20/40 goes into a write
disable mode. CS must be set high after the proper
number of clock cycles to start an internal write cycle.
Access to the array during an internal write cycle is
ignored and programming is continued. On power up,
SO is in a high impedance. If an invalid opcode is
received, no data will be shifted into the CAT25010/20/
40, and the serial output pin (SO) will remain in a high
impedance state until the falling edge of CS is detected
again.
Figure 8. Page Write Instruction Timing
CS
16+(N-1)x8-1..16+(N-1)x8 16+Nx8-1
0
1
2
3
4
5
6
7
8
13 14 15 16-23 24-31
SCK
SI
DATA IN
BYTE ADDRESS
A7 A0
OPCODE
Data
Byte 1
Data
Data
Data Byte N
0
0
0
0
X*
0
1
0
0
Byte 2 Byte 3
7..1
HIGH IMPEDANCE
SO
Note: Dashed Line= mode (1, 1) – – – – – *X=0 for 25010, 25020 ; X=A8 for 25040
Figure 9. HOLD Timing
CS
t
t
CD
CD
SCK
t
HD
t
HD
HOLD
t
HZ
HIGH IMPEDANCE
SO
t
LZ
Note: Dashed Line= mode (1, 1) – – – – –
Figure 10. WP Timing
t
t
WPH
WPS
CS
SCK
WP
WP
Note: Dashed Line= mode (1, 1) – – – – –
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
9
CAT25010, CAT25020, CAT25040
8-LEAD 300 MIL WIDE PLASTIC DIP (L)
E1
E
D
A2
A
L
A1
e
eB
b2
b
SYMBOL
MIN
NOM
MAX
A
A1
A2
b
0.120
0.015
0.115
0.014
0.045
0.355
0.300
0.300
0.240
0.210
0.130
0.018
0.060
0.365
0.195
0.022
0.070
0.400
0.325
0.325
0.280
b2
D
D2
E
0.310
0.250
E1
e
0.100 BSC
eB
L
0.430
0.150
0.115
0.130
Notes:
1. Complies with JEDEC Standard MS001.
2. All dimensions are in inches.
3. Dimensioning and tolerancing per ANSI Y14.5M-1982
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
10
CAT25010, CAT25020, CAT25040
8-LEAD 150 MIL WIDE SOIC (V)
E1
E
D
C
A
θ1
e
A1
L
b
SYMBOL
MIN
NOM
MAX
A1
A2
b
0.0040
0.0532
0.013
0.0098
0.0688
0.020
C
0.0075
0.1890
02284
0.149
0.0098
0.1968
0.2440
0.1574
D
E
E1
e
0.050 BSC
f
0.0099
0.0196
θ
1
0°
8°
Notes:
1. Complies with JEDEC specification MS-012 dimensions.
2. All linear dimensions in millimeters.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
11
CAT25010, CAT25020, CAT25040
8-LEAD TSSOP (Y)
D
5
8
SEE DETAIL A
c
E
E1
E/2
GAGE PLANE
0.25
1
4
PIN #1 IDENT.
θ1
L
A2
SEATING PLANE
SEE DETAIL A
A
e
A1
b
SYMBOL
MIN
NOM
MAX
A
A1
A2
b
1.20
0.15
1.05
0.30
0.20
3.10
6.50
4.50
0.05
0.80
0.19
0.09
2.90
6.30
4.30
0.90
c
D
3.00
6.4
E
E1
e
4.40
0.65 BSC
0.60
L
0.50
0.00
0.75
8.00
θ1
Notes:
1. All dimensions in millimeters.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
12
CAT25010, CAT25020, CAT25040
TAPE AND REEL
Direction of Feed
Device Orientation
SPROKET HOLE
TOP COVER
TAPE THICKNESS (t1)
0.10mm (0.004) MAX THICK
DEVICE ORIENTATION
EMBOSSED
CARRIER
PIN 1
PIN 1
PIN 1
EMBOSSMENT
TDFN
SOIC
TSSOP
Reel Dimensions(1)
T
40mm (1.575) MIN.
ACCESS HOLE
AT SLOT LOCATION
B*
A
D*
C
N
FULL RADIUS*
TAPE SLOT IN CORE
FOR TAPE START.
2.5mm (0.098) MIN WIDTH
10mm (0.394) MIN DEPTH
* DRIVE SPOKES OPTIONAL, IF USED
ASTERISKED DIMENSIONS APPLY.
G (MEASURED AT HUB)
Embossed Carrier Dimensions
A
TAPE
SIZE
MAX
QTY/REEL
B MIN
C
D* MIN N MIN
20.2 50
G
T MAX
330
(13.00)
1.5
(0.059)
12.80 (0.504)
12.4 (0.488) _18.4_
12MM
3000
13.20 (0.5200) (0.795) (1.969) 14.4 (0.558) (0.724)
Component/Tape Size Cross-Reference
Component
Package Type
V, Y
Tape Size (W)
Part Pitch (P)
8L SOIC, TSSOP
12mm
8mm
Notes:
(1) Metric dimensions will govern; English measurements rounded, for reference only and in parentheses.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
13
CAT25010, CAT25020, CAT25040
Embossed Carrier Dimensions (12 Pape Only)
10 PITCHES
CUMULATIVE TOLERANCE
ON TAPE 0.2mm( 0.008)
K
D
P
0
T
P
2
TOP
COVER
TAPE
E
(2)
A
0
F
W
(2)
B
B
0
K
1
0
P
CENTER LINES
OF CAVITY
D
1
FOR COMPONENTS
2.0mm X 1.2mm
AND LARGER
EMBOSSMENT
FOR MACHINE REFERENCE ONLY
INCLUDING DRAFT AND RADII
USER DIRECTION OF FEED
CONCENTRIC ABOUT B
0
Embossed Tape—Constant Dimensions(1)
Tape Sizes
D
E
P0
T Max.
D1 Min.
A0 B0 K0(2)
1.5 (0.059)
1.6 (0.063)
1.65 (0.065)
1.85 (0.073)
3.9 (0.153)
4.1 (0.161)
400
(0.016)
1.5
(0.059)
12mm
Embossed Tape—Variable Dimensions(1)
Tape Sizes
B1 Max.
F
K Max.
P2
R Min.
W
P
8.2
5.45 (0.0215)
4.5
(0.177)
1.95 (0.077)
2.05 (0.081)
30
(1.181)
11.7 (0.460) 7.9 (0.275)
12.3 (0.484) 8.1 (0.355)
12mm
(0.0323) 5.55 (0.0219)
Note:
(1) Metric dimensions will govern; English measurements rounded, for reference only and in parentheses.
(2) A B K are determined by component size. The clearance between the component and the cavity must be within 0.05 (0.002) min. to
0
0
0
0.65 (0.026) max. for 12mm tape, 0.05 (0.002) min. to 0.90 (0.035) max. for 16mm tape, and 0.05 (0.002) min. to 1.00 (0.039) max. for
24mm tape and larger. The component cannot rotate more than 20° within the determined cavity, see Component Rotation.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
14
CAT25010, CAT25020, CAT25040
ORDERING INFORMATION
Prefix
Device #
Suffix
-1.8
25040
– GT3
CAT
I
V
Optional
Company ID
Temperature Range
I = Industrial (-40°C to +85°C)
Product
Number
25040: 4K
25020: 2K
25010: 1K
Operating Voltage
Blank (VCC = 2.5V to 5.5V)
1.8 (VCC = 1.8V to 5.5V)
Package
L: PDIP (Lead-free, Halogen-free)
V: SOIC, JEDEC (Lead-free, Halogen-free)
Y: TSSOP (Lead-free, Halogen-free)
Lead Finish/Tape & Reel
G: NiPdAu Lead Plating
T: Tape & Reel
3: 3000/Reel
Notes:
(1) The device used in the above example is a CAT25040VI-1.8GT3 (SOIC, Industrial Temperature, 1.8 Volt to 5.5 Volt Operating
Voltage, Tape & Reel)
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
15
CAT25010, CAT25020, CAT25040
PACKAGE MARKING
8-Lead PDIP
8-Lead SOIC
VV
VV
25040LI
25040VI
YYWWC
YYWWC
CSI = Catalyst Semiconductor, Inc.
25040L = Device Code:
25010L
CSI = Catalyst Semiconductor, Inc.
25040V = Device Code:
25010V
25020L
25020V
25040L
25040V
I = Temperature Range
YY = Production Year
WW = Production Week
C = Product Revision
VV = Voltage Range
1.8V - 5.5V = 18
I = Temperature Range
YY = Production Year
WW = Production Week
C = Product Revision
VV = Voltage Range
1.8V - 5.5V = 18
2.5V - 5.5V = Blank
2.5V - 5.5V = Blank
8-Lead TSSOP
YMCV
25Y40
Y = Production Year
M = Production Month
C = Die Revision
25Y40 = Device Code:
25Y01
25Y02
25Y04
I = Industrial Temperature Range
V = Voltage Range
1.8V - 5.5V = 8
2.5V - 5.5V = Blank
Notes:
(1) The circle on the package marking indicates the location of Pin 1.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1006, Rev. P
16
REVISION HISTORY
Date
Rev.
Reason
10/13/05
N
Update D.C. Operating Characteristics
Update Ordering Information
Update Pin Configuration
12/09/05
O
Update D.C. Operating Characteristics
Update Pin Impedance Characteristics
Update Figure 2, 3, 4, 6, 8
Add Tape and Reel
Update Ordering Information
Update D.C. Operating Characteristics
Update A.C. Characteristics
Update Pin Description
03/21/06
P
Copyrights, Trademarks and Patents
Trademarks and registered trademarks of Catalyst Semiconductor include each of the following:
DPP ™
AE2 ™
MiniPot™
Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products.
CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS
PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE
RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING
OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.
Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or
other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a
situation where personal injury or death may occur.
Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets
labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.
Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate
typical semiconductor applications and may not be complete.
Catalyst Semiconductor, Inc.
Corporate Headquarters
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Sunnyvale, CA 94089
Phone: 408.542.1000
Fax: 408.542.1200
www.catsemi.com
Publication #: 1006
Revison:
P
Issue date:
03/21/06
相关型号：
CAT25010VI-GT
128X8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, MS-012, CASE 751BD-01, SOIC-8
ONSEMI
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