CAT25160VP2I-GT3 [CATALYST]

8-Kb and 16-Kb SPI Serial CMOS EEPROM; 8 KB和16 KB的SPI串行EEPROM CMOS
CAT25160VP2I-GT3
型号: CAT25160VP2I-GT3
厂家: CATALYST SEMICONDUCTOR    CATALYST SEMICONDUCTOR
描述:

8-Kb and 16-Kb SPI Serial CMOS EEPROM
8 KB和16 KB的SPI串行EEPROM CMOS

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总17页 (文件大小:254K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CAT25080, CAT25160  
8-Kb and 16-Kb SPI Serial CMOS EEPROM  
FEATURES  
DESCRIPTION  
„ 10 MHz SPI compatible  
The CAT25080/25160 are 8-Kb/16-Kb Serial CMOS  
EEPROM devices internally organized as  
1024x8/2048x8 bits. They feature a 32-byte page  
write buffer and support the Serial Peripheral Interface  
(SPI) protocol. The device is enabled through a Chip  
„ 1.8V to 5.5V supply voltage range  
„ SPI modes (0,0) & (1,1)  
„ 32-byte page write buffer  
¯¯  
Select (CS) input. In addition, the required bus signals  
„ Self-timed write cycle  
are a clock input (SCK), data input (SI) and data  
output (SO) lines. The HOLD input may be used to  
pause any serial communication with the  
CAT25080/25160 device. These devices feature  
software and hardware write protection, including  
partial as well as full array protection.  
„ Hardware and software protection  
„ Block write protection  
¯¯¯¯¯  
– Protect 1/4, 1/2 or entire EEPROM array  
„ Low power CMOS technology  
„ 1,000,000 program/erase cycles  
„ 100 year data retention  
„ Industrial temperature range  
„ RoHS-compliant 8 lead PDIP, SOIC, TSSOP and  
8-pad TDFN, UDFN packages  
PIN CONFIGURATION  
FUNCTIONAL SYMBOL  
PDIP (L)  
SOIC (V)  
TSSOP (Y)  
TDFN (VP2)  
UDFN (HU2)  
VCC  
SI  
¯¯  
1
2
3
4
8
7
6
5
VCC  
CS  
CAT25080  
CAT25160  
CS  
WP  
SO  
¯¯¯¯¯  
HOLD  
SO  
¯¯¯  
WP  
SCK  
SI  
HOLD  
SCK  
VSS  
PIN FUNCTION  
GND  
Pin Name  
Function  
¯¯  
CS  
Chip Select  
SO  
Serial Data Output  
Write Protect  
¯¯¯  
WP  
VSS  
SI  
Ground  
Serial Data Input  
Serial Clock  
SCK  
¯¯¯¯¯  
Hold Transmission Input  
Power Supply  
HOLD  
For Ordering Information details, see page 16.  
VCC  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
1
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
ABSOLUTE MAXIMUM RATINGS(1)  
Parameters  
Ratings  
–65 to +150  
Units  
ºC  
Storage Temperature  
Voltage on any Pin with Respect to Ground(2)  
–0.5 to VCC + 0.5  
V
RELIABILITY CHARACTERISTICS(3)  
Symbol  
Parameter  
Min  
1,000,000  
100  
Units  
(4)  
NEND  
Endurance  
Program/ Erase Cycles  
Years  
TDR  
Data Retention  
D.C. OPERATING CHARACTERISTICS  
CC = +1.8V to +5.5V, TA=-40°C to +85°C unless otherwise specified.  
V
Symbol Parameter Test Conditions  
Min  
Max  
Units  
ICC  
ISB1  
ISB2  
Supply Current  
Standby Current  
Standby Current  
2
mA  
Read, Write, VCC = 5.0V, fSCK = 10MHz,  
SO open  
2
4
µA  
µA  
¯¯  
¯¯¯  
VIN = GND or VCC , CS = VCC , WP = VCC,  
VCC = 5.0V  
¯¯  
¯¯¯  
VIN = GND or VCC , CS = VCC , WP = GND,  
VCC = 5.0V  
IL  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
VIN = GND or VCC  
-2  
-1  
2
1
µA  
µA  
V
¯¯  
ILO  
VIL  
VIH  
CS = VCC , VOUT = GND or VCC  
-0.5  
0.7VCC  
0.3VCC  
VCC + 0.5  
0.4  
Input High Voltage  
V
VOL1 Output Low Voltage  
VOH1 Output High Voltage  
VOL2 Output Low Voltage  
VOH2 Output High Voltage  
VCC > 2.5V, IOL = 3.0mA  
VCC > 2.5V, IOH = -1.6mA  
VCC > 1.8V, IOL = 150µA  
VCC > 1.8V, IOH = -100µA  
V
VCC - 0.8V  
VCC - 0.2V  
V
0.2  
V
V
PIN CAPACITANCE(3)  
TA = 25˚C, f = 1.0MHz, VCC = +5.0V  
Symbol Test  
Conditions  
Min  
Typ  
Max  
8
Units  
pF  
COUT  
CIN  
Output Capacitance (SO)  
¯¯  
VOUT = 0V  
VIN = 0V  
¯¯¯ ¯¯¯¯¯  
Input Capacitance (CS, SCK, SI, WP, HOLD)  
8
pF  
Notes:  
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,  
and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is  
not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.  
(2) The DC input voltage on any pin should not be lower than -0.5V or higher than VCC + 0.5V. During transitions, the voltage on any pin may  
undershoot to no less than -1.5V or overshoot to no more than VCC + 1.5V, for periods of less than 20ns.  
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100 and  
JEDEC test methods.  
(4) Page Mode, VCC = 5V, 25°C  
Doc. No. 1122 Rev. A  
2
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT25080, CAT25160  
A.C. CHARACTERISTICS  
TA = -40°C to +85°C, unless otherwise specified.(1)  
VCC = 1.8V-5.5V  
VCC = 2.5V-5.5V  
Symbol Parameter  
Units  
MHz  
ns  
Min.  
Max.  
Min.  
DC  
20  
Max.  
fSCK  
tSU  
tH  
Clock Frequency  
Data Setup Time  
Data Hold Time  
SCK High Time  
SCK Low Time  
DC  
30  
30  
75  
75  
5
10  
20  
ns  
tWH  
tWL  
tLZ  
40  
ns  
40  
ns  
¯¯¯¯¯  
HOLD to Output Low Z  
50  
2
25  
2
ns  
(2)  
tRI  
Input Rise Time  
Input Fall Time  
µs  
(2)  
tFI  
2
2
µs  
¯¯¯¯¯  
tHD  
tCD  
0
0
ns  
HOLD Setup Time  
¯¯¯¯¯  
HOLD Hold Time  
10  
10  
ns  
tV  
Output Valid from Clock Low  
Output Hold Time  
75  
40  
ns  
tHO  
0
0
ns  
tDIS  
tHZ  
Output Disable Time  
50  
20  
25  
ns  
¯¯¯¯¯  
HOLD to Output High Z  
100  
ns  
¯¯  
tCS  
50  
50  
50  
10  
10  
15  
15  
15  
10  
10  
ns  
CS High Time  
¯¯  
tCSS  
tCSH  
tWPS  
tWPH  
ns  
CS Setup Time  
¯¯  
ns  
CS Hold Time  
¯¯¯  
ns  
WP Setup Time  
¯¯¯  
WP Hold Time  
ns  
(4)  
tWC  
Write Cycle Time  
5
5
ms  
Power-Up Timing(2)(3)  
Symbol Parameter  
Max.  
Units  
tPUR  
tPUW  
Power-up to Read Operation  
Power-up to Write Operation  
1
1
ms  
ms  
Notes:  
(1) AC Test Conditions:  
Input Pulse Voltages: 0.3VCC to 0.7VCC  
Input rise and fall times: 10ns  
Input and output reference voltages: 0.5VCC  
Output load: current source IOL max/IOH max; CL = 50pF  
(2) This parameter is tested initially and after a design or process change that affects the parameter.  
(3) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.  
¯¯  
(4) tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
3
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
PIN DESCRIPTION  
FUNCTIONAL DESCRIPTION  
SI: The serial data input pin accepts op-codes,  
addresses and data. In SPI modes (0,0) and (1,1)  
input data is latched on the rising edge of the SCK  
clock input.  
The CAT25080/160 devices support the Serial Periphe–  
ral Interface (SPI) bus protocol, modes (0,0) and (1,1).  
The device contains an 8-bit instruction register. The  
instruction set and associated op-codes are listed in  
Table 1.  
SO: The serial data output pin is used to transfer data  
out of the device. In SPI modes (0,0) and (1,1) data is  
shifted out on the falling edge of the SCK clock.  
Reading data stored in the CAT25080/160 is accom–  
plished by simply providing the READ command and an  
address. Writing to the CAT25080/160, in addition to a  
WRITE command, address and data, also requires  
enabling the device for writing by first setting certain bits  
in a Status Register, as will be explained later.  
SCK: The serial clock input pin accepts the clock  
provided by the host and used for synchronizing  
communication between host and CAT25080/160.  
¯¯  
CS: The chip select input pin is used to enable/disable  
¯¯  
the CAT25080/160. When CS is high, the SO output is  
¯¯  
After a high to low transition on the CS input pin, the  
tri-stated (high impedance) and the device is in  
Standby Mode (unless an internal write operation is in  
progress). Every communication session between host  
and CAT25080/160 must be preceded by a high to low  
transition and concluded with a low to high transition of  
CAT25080/160 will accept any one of the six instruction  
op-codes listed in Table 1 and will ignore all other  
possible 8-bit combinations. The communication proto–  
col follows the timing from Figure 1.  
¯¯  
the CS input.  
¯¯¯  
WP: The write protect input pin will allow all write  
Table 1: Instruction Set  
¯¯¯  
operations to the device when held high. When WP  
Instruction  
WREN  
WRDI  
Opcode  
Operation  
pin is tied low and the WPEN bit in the Status  
Register (refer to Status Register description, later in  
this Data Sheet) is set to “1”, writing to the Status  
Register is disabled.  
0000 0110 Enable Write Operations  
0000 0100 Disable Write Operations  
0000 0101 Read Status Register  
0000 0001 Write Status Register  
0000 0011 Read Data from Memory  
0000 0010 Write Data to Memory  
RDSR  
¯¯¯¯¯  
¯¯¯¯¯  
HOLD: The HOLD input pin is used to pause trans–  
mission between host and CAT25080/160, without  
having to retransmit the entire sequence at a later  
WRSR  
READ  
¯¯¯¯¯  
time. To pause, HOLD must be taken low and to  
WRITE  
resume it must be taken back high, with the SCK  
input low during both transitions. When not used for  
¯¯¯¯¯  
pausing, the HOLD input should be tied to VCC,  
either directly or through a resistor.  
Figure 1. Synchronous Data Timing  
t
CS  
V
IH  
CS  
V
IL  
t
t
CSH  
CSS  
V
V
IH  
t
t
WL  
SCK  
SI  
WH  
t
IL  
t
H
SU  
V
IH  
VALID IN  
V
IL  
t
RI  
FI  
t
t
V
t
t
HO  
DIS  
V
OH  
HI-Z  
HI-Z  
SO  
V
OL  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1122 Rev. A  
4
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT25080, CAT25160  
STATUS REGISTER  
The Status Register, as shown in Table 2, contains a  
number of status and control bits.  
user with the WRSR command and are non-volatile.  
The user is allowed to protect a quarter, one half or the  
entire memory, by setting these bits according to Table  
3. The protected blocks then become read-only.  
¯¯¯¯  
The RDY (Ready) bit indicates whether the device is  
busy with a write operation. This bit is automatically set  
to 1 during an internal write cycle, and reset to 0 when  
the device is ready to accept commands. For the host,  
this bit is read only.  
The WPEN (Write Protect Enable) bit acts as an enable  
¯¯¯  
for the WP pin. Hardware write protection is enabled  
¯¯¯  
when the WP pin is low and the WPEN bit is 1. This  
condition prevents writing to the status register and to  
the block protected sections of memory. While  
hardware write protection is active, only the non-block  
protected memory can be written. Hardware write  
The WEL (Write Enable Latch) bit is set/reset by the  
WREN/WRDI commands. When set to 1, the device is  
in a Write Enable state and when set to 0, the device is  
in a Write Disable state.  
¯¯¯  
protection is disabled when the WP pin is high or the  
¯¯¯  
WPEN bit is 0. The WPEN bit, WP pin and WEL bit  
The BP0 and BP1 (Block Protect) bits determine which  
blocks are currently write protected. They are set by the  
combine to either permit or inhibit Write operations, as  
detailed in Table 4.  
Table 2. Status Register  
7
6
0
5
0
4
0
3
2
1
0
¯¯¯¯  
RDY  
WPEN  
BP1  
BP0  
WEL  
Table 3. Block Protection Bits  
Status Register Bits  
Array Address Protected  
Protection  
BP1  
BP0  
0
0
None  
No Protection  
25080: 0300-03FF  
25160: 0600-07FF  
25080: 0200-03FF  
25160: 0400-07FF  
25080: 0000-03FF  
25160: 0000-07FF  
0
1
1
1
0
1
Quarter Array Protection  
Half Array Protection  
Full Array Protection  
Table 4. Write Protect Conditions  
Protected  
Blocks  
Unprotected  
Status  
Register  
¯¯¯  
WP  
WPEN  
WEL  
Blocks  
Protected  
Writable  
Protected  
Writable  
Protected  
Writable  
0
0
1
1
X
X
X
0
1
0
1
0
1
Protected  
Protected  
Protected  
Protected  
Protected  
Protected  
Protected  
Writable  
X
Low  
Low  
High  
High  
Protected  
Protected  
Protected  
Writable  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
5
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
WRITE OPERATIONS  
¯¯  
The CAT25080/160 device powers up into a write  
disable state. The device contains a Write Enable Latch  
(WEL) which must be set before attempting to write to  
the memory array or to the status register. In addition,  
the address of the memory location(s) to be written  
must be outside the protected area, as defined by BP0  
and BP1 bits from the status register.  
take the CS input high after the WREN instruction, as  
otherwise the Write Enable Latch will not be properly  
set. WREN timing is illustrated in Figure 2. The WREN  
instruction must be sent prior any WRITE or WRSR  
instruction.  
The internal write enable latch is reset by sending the  
WRDI instruction as shown in Figure 3. Disabling write  
operations by resetting the WEL bit, will protect the  
device against inadvertent writes.  
Write Enable and Write Disable  
The internal Write Enable Latch and the corresponding  
Status Register WEL bit are set by sending the WREN  
instruction to the CAT25080/160. Care must be taken to  
Figure 2. WREN Timing  
CS  
SCK  
1
1
0
SI  
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
Figure 3. WRDI Timing  
CS  
SCK  
SI  
1
0
0
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1122 Rev. A  
6
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT25080, CAT25160  
Byte Write  
Page Write  
Once the WEL bit is set, the user may execute a write  
sequence, by sending a WRITE instruction, a 16-bit  
address and data as shown in Figure 4. Only 10  
significant address bits are used by the CAT25080 and  
11 by the CAT25160. The rest are don’t care bits, as  
shown in Table 5. Internal programming will start after  
After sending the first data byte to the CAT25080/160,  
the host may continue sending data, up to a total of 32  
bytes, according to timing shown in Figure 5. After each  
data byte, the lower order address bits are automatically  
incremented, while the higher order address bits (page  
address) remain unchanged. If during this process the  
end of page is exceeded, then loading will “roll over” to  
the first byte in the page, thus possibly overwriting  
previoualy loaded data. Following completion of the  
write cycle, the CAT25080/160 is automatically returned  
to the write disable state.  
¯¯  
the low to high CS transition. During an internal write  
cycle, all commands, except for RDSR (Read Status  
¯¯¯¯  
Register) will be ignored. The RDY bit will indicate if the  
¯¯¯¯  
internal write cycle is in progress (RDY high), or the the  
¯¯¯¯  
device is ready to accept commands (RDY low).  
Table 5. Byte Address  
Device  
Address Significant Bits  
A9 - A0  
Address Don't Care Bits  
A15 - A10  
# Address Clock Pulse  
CAT25080  
CAT25160  
16  
16  
A10 - A0  
A15 - A11  
Figure 4. Byte WRITE Timing  
CS  
0
1
2
3
4
5
6
7
8
21 22 23 24 25 26 27 28 29 30 31  
SCK  
SI  
OPCODE  
BYTE ADDRESS*  
DATA IN  
A
A
0
D7 D6 D5 D4 D3 D2 D1 D0  
0
0
0
0
0
0
1
0
N
HIGH IMPEDANCE  
SO  
* Please check the Byte Address Table (Table 5)  
Note: Dashed Line = mode (1, 1) - - - - - -  
Figure 5. Page WRITE Timing  
CS  
24+(N-1)x8-1..24+(N-1)x8 24+Nx8-1  
0
1
2
3
4
5
6
7
8
21 22 23  
32-39  
24-31  
SCK  
SI  
DATA IN  
Data Data  
Byte 2 Byte 3  
BYTE ADDRESS*  
OPCODE  
Data  
Data Byte N  
0
0
0
0
0
0
1
0
A
A
0
0
Byte 1  
N
7..1  
HIGH IMPEDANCE  
SO  
*Please check the Byte Address Table. (Table 5)  
Note: Dashed Line = mode (1, 1) - - - - - -  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
7
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
Write Protection  
Write Status Register  
¯¯¯  
The Write Protect (WP) pin can be used to protect the  
Block Protect bits BP0 and BP1 against being  
The Status Register is written by sending a WRSR  
instruction according to timing shown in Figure 6. Only  
bits 2, 3 and 7 can be written using the WRSR  
command.  
¯¯¯  
inadvertently altered. When WP is low and the WPEN  
bit is set to “1”, write operations to the Status Register  
are inhibited. WP going low while CS is still low will  
¯¯¯  
¯¯  
interrupt a write to the status register. If the internal  
¯¯¯  
write cycle has already been initiated, WP going low will  
have no effect on any write operation to the Status  
¯¯¯  
Register. The WP pin function is blocked when the  
¯¯¯  
WPEN bit is set to “0”. The WP input timing is shown in  
Figure 7.  
Figure 6. WRSR Timing  
CS  
0
1
2
3
4
5
6
7
1
8
9
6
10  
5
11  
4
12  
13  
2
14  
1
15  
0
SCK  
OPCODE  
DATA IN  
SI  
0
0
0
0
0
0
0
7
3
MSB  
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
¯¯¯  
Figure 7. WP Timing  
t
t
WPH  
WPS  
CS  
SCK  
WP  
WP  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1122 Rev. A  
8
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT25080, CAT25160  
READ OPERATIONS  
Read Status Register  
Read from Memory Array  
To read the status register, the host simply sends a  
RDSR command. After receiving the last bit of the  
command, the CAT25080/160 will shift out the contents  
of the status register on the SO pin (Figure 9). The  
status register may be read at any time, including during  
an internal write cycle.  
To read from memory, the host sends a READ  
instruction followed by a 16-bit address (see Table 5 for  
the number of significant address bits).  
After receiving the last address bit, the CAT25080/160  
will respond by shifting out data on the SO pin (as  
shown in Figure 8). Sequentially stored data can be  
read out by simply continuing to run the clock. The  
internal address pointer is automatically incremented to  
the next higher address as data is shifted out. After  
reaching the highest memory address, the address  
counter “rolls over” to the lowest memory address, and  
the read cycle can be continued indefinitely. The read  
¯¯  
operation is terminated by taking CS high.  
Figure 8. READ Timing  
CS  
0
1
2
3
4
5
6
7
8
9
10  
20 21 22 23 24 25 26 27 28 29 30  
SCK  
OPCODE  
BYTE ADDRESS*  
A
A
0
SI  
0
0
0
0
0
0
1
1
N
DATA OUT  
HIGH IMPEDANCE  
SO  
7
6
5
4
3
2
1
0
MSB  
* Please check the Byte Address Table (Table 5).  
Note: Dashed Line = mode (1, 1) - - - - - -  
Figure 9. RDSR Timing  
CS  
0
1
2
3
4
5
1
6
0
7
1
8
9
10  
11  
12  
13  
14  
SCK  
OPCODE  
0
0
0
0
0
SI  
DATA OUT  
HIGH IMPEDANCE  
SO  
5
7
6
4
3
2
1
0
MSB  
Note: Dashed Line = mode (1, 1) - - - - - -  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
9
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
The CAT25080/160 device powers up in a write disable  
state and in a low power standby mode. A WREN  
instruction must be issued prior any writes to the device.  
Hold Operation  
¯¯¯¯¯  
The HOLD input can be used to pause communication  
between host and CAT25080/160. To pause, HOLD  
¯¯¯¯¯  
must be taken low while SCK is low (Figure 10). During  
After power up, the CS pin must be brought low to enter  
a ready state and receive an instruction. After a  
successful byte/page write or status register write, the  
device goes into a write disable mode. The CS input  
must be set high after the proper number of clock cycles  
to start the internal write cycle. Access to the memory  
array during an internal write cycle is ignored and  
programming is continued. Any invalid op-code will be  
ignored and the serial output pin (SO) will remain in the  
high impedance state.  
¯¯  
the hold condition the device must remain selected (CS  
low). During the pause, the data output pin (SO) is tri-  
stated (high impedance) and SI transitions are ignored.  
¯¯¯¯¯  
To resume communication, HOLD must be taken high  
while SCK is low.  
DESIGN CONSIDERATIONS  
The CAT25080/160 devices incorporate Power-On  
Reset (POR) circuitry which protects the internal logic  
against powering up in the wrong state. The device will  
power up into Standby mode after VCC exceeds the  
POR trigger level and will power down into Reset mode  
when VCC drops below the POR trigger level. This bi-  
directional POR behavior protects the device against  
‘brown-out’ failure following a temporary loss of power.  
¯¯¯¯¯  
Figure 10. HOLD Timing  
CS  
t
t
CD  
CD  
SCK  
t
HD  
t
HD  
HOLD  
t
HZ  
HIGH IMPEDANCE  
SO  
t
LZ  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1122 Rev. A  
10  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT25080, CAT25160  
PACKAGE OUTLINES  
8-lEAD 300MIL WIDE PLASTIC DIP (L)  
E1  
E
D
A2  
A
L
A1  
e
eB  
b2  
b
SYMBOL  
MIN  
NOM  
MAX  
A
A1  
A2  
b
4.57  
0.38  
3.05  
0.36  
1.14  
0.21  
9.02  
7.62  
6.09  
3.81  
0.56  
1.77  
0.35  
10.16  
8.25  
7.11  
0.46  
0.26  
b2  
c
D
E
7.87  
6.35  
E1  
e
2.54 BSC  
eB  
L
7.87  
2.92  
9.65  
3.81  
For current Tape and Reel information, download the PDF file from:  
http://www.catsemi.com/documents/tapeandreel.pdf.  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC specification MS001  
(3) Dimensioning and tolerancing per ANSI Y14.5M-1982.  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
11  
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
8-LEAD 150 MIL SOIC (V)  
E1  
E
h x 45  
D
C
A
q1  
e
A1  
L
b
SYMBOL  
MIN  
NOM  
MAX  
0.25  
1.75  
0.51  
0.25  
5.00  
6.20  
4.00  
A1  
A
0.10  
1.35  
0.33  
0.19  
4.80  
5.80  
3.80  
b
C
D
E
E1  
e
1.27 BSC  
h
0.25  
0.40  
0°  
0.50  
1.27  
8°  
L
q1  
For current Tape and Reel information, download the PDF file from:  
http://www.catsemi.com/documents/tapeandreel.pdf.  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC specification MS-012.  
Doc. No. 1122 Rev. A  
12  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT25080, CAT25160  
8-LEAD TSSOP (Y)  
D
5
8
SEE DETAIL A  
c
E
E1  
E/2  
GAGE PLANE  
1
4
PIN #1 IDENT.  
0.25  
q1  
L
A2  
SEATING PLANE  
SEE DETAIL A  
A
e
A1  
b
SYMBOL  
MIN  
NOM  
0.90  
MAX  
A
A1  
A2  
b
1.20  
0.15  
1.05  
0.30  
0.20  
3.10  
6.50  
4.50  
0.05  
0.80  
0.19  
0.09  
2.90  
6.30  
4.30  
c
D
3.00  
6.4  
E
E1  
e
4.40  
0.65 BSC  
0.60  
L
0.50  
0.00  
0.75  
8.00  
q1  
For current Tape and Reel information, download the PDF file from:  
http://www.catsemi.com/documents/tapeandreel.pdf.  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC Standard MO-153  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
13  
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
8-PAD TDFN (2 x 3mm) PACKAGE (VP2)  
A
E
PIN 1 INDEX AREA  
D
A1  
D2  
A2  
A3  
SYMBOL  
MIN  
0.70  
0.00  
0.45  
NOM  
0.75  
MAX  
0.80  
0.05  
0.65  
A
A1  
A2  
A3  
b
0.02  
E2  
0.55  
0.20 REF  
0.25  
0.20  
1.90  
1.30  
2.90  
1.20  
0.30  
2.10  
1.50  
3.10  
1.40  
PIN 1 ID  
D
2.00  
D2  
E
1.40  
3.00  
E2  
e
1.30  
L
0.50 TYP  
0.30  
L
0.20  
0.40  
b
e
3 x e  
For current Tape and Reel information, download the PDF file from:  
http://www.catsemi.com/documents/tapeandreel.pdf.  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC specification MO-229.  
Doc. No. 1122 Rev. A  
14  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT25080, CAT25160  
8-PAD UDFN (2 x 2mm) PACKAGE (HU2)  
DETAIL A  
PIN#1  
INDENTIFICATION  
PIN#1 INDEX AREA  
TOP VIEW  
SIDE VIEW  
BOTTOM VIEW  
SYMBOL  
NOM  
MAX  
MIN  
DETAIL A  
For current Tape and Reel information, download the PDF file from:  
http://www.catsemi.com/documents/tapeandreel.pdf.  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC specification MO-229.  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
15  
Doc. No. 1122 Rev. A  
CAT25080, CAT25160  
ORDERING INFORMATION  
Prefix  
Device # Suffix  
CAT  
25160  
V
I
-G  
T3  
Package  
L: PDIP  
V: SOIC, JEDEC  
Y: TSSOP  
VP2: TDFN (2 x 3mm)  
HU2: UDFN (2 x 2mm)  
Temperature Range  
I = Industrial (-40ºC to 85ºC)  
Lead Finish  
Blank: Matte-Tin  
G: NiPdAu  
Company ID  
Product Number  
25080: 8-Kb  
25160: 16-Kb  
Tape & Reel  
T: Tape & Reel  
3: 3000 units/Reel  
Notes:  
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).  
(2) The standard lead finish is NiPdAu.  
(3) The device used in the above example is a CAT25160VI-GT3 (SOIC, Industrial Temperature, NiPdAu, Tape & Reel).  
(4) For additional package and temperature options, please contact your nearest Catalyst Semiconductor Sales office.  
Doc. No. 1122 Rev. A  
16  
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
REVISION HISTORY  
Date  
Rev. Comments  
Initial Issue  
12/06/2006  
A
Copyrights, Trademarks and Patents  
Trademarks and registered trademarks of Catalyst Semiconductor include each of the following:  
Beyond Memory™, DPP™, EZDim™, MiniPot™, and Quad-Mode™  
Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products.  
CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS  
PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE  
RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING  
OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.  
Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal  
injury or death may occur.  
Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled  
"Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.  
Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical  
semiconductor applications and may not be complete.  
Catalyst Semiconductor, Inc.  
Corporate Headquarters  
2975 Stender Way  
Santa Clara, CA 95054  
Phone: 408.542.1000  
Fax: 408.542.1200  
www.catsemi.com  
Document No: 1122  
Revision:  
A
Issue date:  
12/06/06  

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