CAT28C16API-20T [CATALYST]

16K-Bit CMOS PARALLEL E2PROM; 16K位CMOS并行E2PROM
CAT28C16API-20T
型号: CAT28C16API-20T
厂家: CATALYST SEMICONDUCTOR    CATALYST SEMICONDUCTOR
描述:

16K-Bit CMOS PARALLEL E2PROM
16K位CMOS并行E2PROM

可编程只读存储器
文件: 总8页 (文件大小:58K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CAT28C16A  
16K-Bit CMOS PARALLEL E2PROM  
FEATURES  
Fast Read Access Times: 200 ns  
End of Write Detection: DATA Polling  
Hardware Write Protection  
CMOS and TTL Compatible I/O  
10,000 Program/Erase Cycles  
10 Year Data Retention  
Low Power CMOS Dissipation:  
–Active: 25 mA Max.  
–Standby: 100 µA Max.  
Simple Write Operation:  
–On-Chip Address and Data Latches  
–Self-Timed Write Cycle with Auto-Clear  
Commercial, Industrial and Automotive  
Temperature Ranges  
Fast Write Cycle Time: 10ms Max  
DESCRIPTION  
The CAT28C16A is a fast, low power, 5V-only CMOS  
Parallel E2PROM organized as 2K x 8-bits. It requires a  
simple interface for in-system programming. On-chip  
address and data latches, self-timed write cycle with  
auto-clear and VCC power up/down write protection  
eliminate additional timing and protection hardware.  
DATA Polling signals the start and end of the self-timed  
writecycle. Additionally, theCAT28C16Afeatureshard-  
ware write protection.  
The CAT28C16A is manufactured using Catalyst’s ad-  
vancedCMOSfloatinggatetechnology. Itisdesignedto  
endure 10,000 program/erase cycles and has a data  
retention of 10 years. The device is available in JEDEC  
approved 24-pin DIP and SOIC or 32-pin PLCC pack-  
ages.  
BLOCK DIAGRAM  
2,048 x 8  
E2PROM  
ARRAY  
ROW  
DECODER  
ADDR. BUFFER  
A –A  
4
10  
& LATCHES  
INADVERTENT  
WRITE  
PROTECTION  
HIGH VOLTAGE  
GENERATOR  
V
CC  
CE  
OE  
WE  
CONTROL  
LOGIC  
I/O BUFFERS  
I/O –I/O  
TIMER  
DATA POLLING  
0
7
ADDR. BUFFER  
& LATCHES  
A –A  
COLUMN  
DECODER  
0
3
5089 FHD F02  
© 1998 by Catalyst Semiconductor, Inc.  
Doc. No. 25033-00 2/98  
1
Characteristics subject to change without notice  
CAT28C16A  
PIN CONFIGURATION  
DIP Package (P)  
SOIC Package (J,K)  
PLCC Package (N)  
A
A
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
V
A
A
A
A
V
A
A
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
7
6
5
4
3
2
1
0
0
1
2
CC  
8
7
6
5
4
3
2
1
0
0
1
2
CC  
8
2
2
A
3
A
3
4
3 2 1 32 31 30  
9
9
5
6
7
8
9
29  
28  
27  
26  
25  
24  
23  
22  
21  
A
A
A
A
A
A
A
A
A
A
4
A
WE  
4
WE  
6
5
4
3
2
1
0
8
9
A
5
OE  
A
OE  
5
NC  
NC  
OE  
A
A
6
A
A
6
A
10  
10  
A
7
A
CE  
7
CE  
TOP VIEW  
A
8
A
I/O  
7
I/O  
6
I/O  
5
I/O  
4
8
I/O  
7
I/O  
6
I/O  
5
I/O  
4
10  
11  
12  
13  
I/O  
I/O  
I/O  
V
9
I/O  
I/O  
I/O  
V
9
10  
CE  
I/O  
10  
11  
12  
10  
11  
12  
NC  
I/O  
7
I/O  
6
I/O  
3
I/O  
3
0
SS  
SS  
14 15 16 17 18 19 20  
PIN FUNCTIONS  
5089 FHD F01  
Pin Name  
Function  
Address Inputs  
A0–A10  
I/O0–I/O7  
CE  
Data Inputs/Outputs  
Chip Enable  
Output Enable  
Write Enable  
5V Supply  
OE  
WE  
VCC  
VSS  
Ground  
NC  
No Connect  
MODE SELECTION  
Mode  
CE  
WE  
OE  
L
I/O  
Power  
ACTIVE  
ACTIVE  
ACTIVE  
STANDBY  
ACTIVE  
Read  
L
L
H
DOUT  
DIN  
Byte Write (WE Controlled)  
Byte Write (CE Controlled)  
Standby, and Write Inhibit  
Read and Write Inhibit  
H
L
X
H
H
DIN  
H
X
X
High-Z  
High-Z  
H
CAPACITANCE T = 25°C, f = 1.0 MHz, V  
= 5V  
CC  
A
Symbol  
Test  
Max.  
10  
Units  
pF  
Conditions  
(1)  
CI/O  
Input/Output Capacitance  
Input Capacitance  
VI/O = 0V  
VIN = 0V  
(1)  
CIN  
6
pF  
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
Doc. No. 25033-00 2/98  
2
CAT28C16A  
ABSOLUTE MAXIMUM RATINGS*  
*COMMENT  
Temperature Under Bias ................. –55°C to +125°C  
Storage Temperature....................... –65°C to +150°C  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
These are stress ratings only, and functional operation  
of the device at these or any other conditions outside of  
those listed in the operational sections of this specifica-  
tion is not implied. Exposure to any absolute maximum  
rating for extended periods may affect device perfor-  
mance and reliability.  
Voltage on Any Pin with  
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V  
VCC with Respect to Ground ............... –2.0V to +7.0V  
Package Power Dissipation  
Capability (Ta = 25°C)................................... 1.0W  
Lead Soldering Temperature (10 secs) ............ 300°C  
Output Short Circuit Current(3) ........................ 100 mA  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Min.  
10,000  
10  
Max.  
Units  
Cycles/Byte  
Years  
Test Method  
(1)  
NEND  
MIL-STD-883, Test Method 1033  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
(1)  
TDR  
Data Retention  
ESD Susceptibility  
Latch-Up  
(1)  
VZAP  
2000  
100  
Volts  
(1)(4)  
ILTH  
mA  
D.C. OPERATING CHARACTERISTICS  
VCC = 5V ±10%, unless otherwise specified.  
Limits  
Symbol  
Parameter  
Min. Typ.  
Max.  
Units  
Test Conditions  
CE = OE = VIL,  
f = 1/tRC min, All I/O’s Open  
CE = OE = VILC  
ICC  
VCC Current (Operating, TTL)  
35  
mA  
(5)  
ICCC  
VCC Current (Operating, CMOS)  
25  
mA  
,
f = 1/tRC min, All I/O’s Open  
ISB  
VCC Current (Standby, TTL)  
VCC Current (Standby, CMOS)  
1
mA  
CE = VIH, All I/O’s Open  
(6)  
ISBC  
100  
µA  
CE = VIHC,  
All I/O’s Open  
ILI  
Input Leakage Current  
Output Leakage Current  
–10  
–10  
10  
10  
µA  
µA  
VIN = GND to VCC  
ILO  
VOUT = GND to VCC  
,
CE = VIH  
(6)  
VIH  
High Level Input Voltage  
Low Level Input Voltage  
High Level Output Voltage  
Low Level Output Voltage  
Write Inhibit Voltage  
2
VCC +0.3  
0.8  
V
V
V
V
V
(5)  
VIL  
–0.3  
2.4  
VOH  
VOL  
VWI  
IOH = –400µA  
0.4  
IOL = 2.1mA  
3.0  
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC  
voltage on output pins is V +0.5V, which may overshoot to V +2.0V for periods of less than 20 ns.  
CC  
CC  
(3) Output shorted for no more than one second. No more than one output shorted at a time.  
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V +1V.  
CC  
(5) V  
(6) V  
= –0.3V to +0.3V.  
ILC  
= V –0.3V to V +0.3V.  
IHC  
CC  
CC  
Doc. No. 25033-00 2/98  
3
CAT28C16A  
A.C. CHARACTERISTICS, Read Cycle  
VCC = 5V ±10%, unless otherwise specified.  
28C16A-20  
Symbol  
Parameter  
Min. Max.  
Units  
ns  
tRC  
tCE  
tAA  
tOE  
Read Cycle Time  
200  
200  
200  
80  
0
CE Access Time  
ns  
Address Access Time  
OE Access Time  
ns  
ns  
(1)  
tLZ  
CE Low to Active Output  
OE Low to Active Output  
CE High to High-Z Output  
OE High to High-Z Output  
ns  
(1)  
tOLZ  
0
ns  
(1)(2)  
tHZ  
55  
55  
0
ns  
(1)(2)  
tOHZ  
ns  
(1)  
tOH  
Output Hold from Address Change  
ns  
Figure 1. A.C. Testing Input/Output Waveform(3)  
2.4 V  
2.0 V  
0.8 V  
INPUT PULSE LEVELS  
0.45 V  
REFERENCE POINTS  
5089 FHD F03  
Figure 2. A.C. Testing Load Circuit (example)  
1.3V  
1N914  
3.3K  
DEVICE  
UNDER  
TEST  
OUT  
C
= 100 pF  
L
C
INCLUDES JIG CAPACITANCE  
L
5089 FHD F04  
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.  
(3) Input rise and fall times (10% and 90%) < 10 ns.  
Doc. No. 25033-00 2/98  
4
CAT28C16A  
A.C. CHARACTERISTICS, Write Cycle  
VCC = 5V ±10%, unless otherwise specified.  
28C16A-20  
Symbol  
Parameter  
Min. Max.  
Units  
ms  
ns  
tWC  
tAS  
tAH  
tCS  
tCH  
tCW  
Write Cycle Time  
Address Setup Time  
Address Hold Time  
CE Setup Time  
CE Hold Time  
10  
10  
100  
0
ns  
ns  
0
ns  
(2)  
CE Pulse Time  
OE Setup Time  
OE Hold Time  
150  
15  
15  
150  
50  
10  
50  
ns  
tOES  
tOEH  
ns  
ns  
(2)  
tWP  
tDS  
tDH  
tDL  
WE Pulse Width  
Data Setup Time  
Data Hold Time  
Data Latch Time  
ns  
ns  
ns  
ns  
(1)  
tINIT  
Write Inhibit Period After Power-up  
5
20  
ms  
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) A write pulse of less than 20ns duration will not initiate a write cycle.  
Doc. No. 25033-00 2/98  
5
CAT28C16A  
DEVICE OPERATION  
low. The data bus is set to a high impedance state when  
either CE or OE goes high. This 2-line control architec-  
ture can be used to eliminate bus contention in a system  
environment.  
Read  
Data stored in the CAT28C16A is transferred to the data  
bus when WE is held high, and both OE and CE are held  
Figure 3. Read Cycle  
t
RC  
ADDRESS  
CE  
t
CE  
t
OE  
OE  
V
IH  
t
WE  
LZ  
t
OHZ  
t
t
OLZ  
t
HZ  
DATA VALID  
OH  
HIGH-Z  
DATA OUT  
DATA VALID  
t
AA  
28C16A F05  
Figure 4. Byte Write Cycle [WE Controlled]  
t
WC  
ADDRESS  
t
t
AH  
AS  
t
t
CH  
CS  
CE  
OE  
WE  
t
t
t
OEH  
OES  
WP  
t
DL  
HIGH-Z  
DATA OUT  
DATA IN  
DATA VALID  
DS  
t
t
DH  
5089 FHD F06  
Doc. No. 25033-00 2/98  
6
CAT28C16A  
Byte Write  
DATA Polling  
A write cycle is executed when both CE and WE are low,  
and OE is high. Write cycles can be initiated using either  
WE or CE, with the address input being latched on the  
falling edge of WE or CE, whichever occurs last. Data,  
conversely, is latched on the rising edge of WE or CE,  
whichever occurs first. Once initiated, a byte write cycle  
automatically erases the addressed byte and the new  
data is written within 10 ms.  
DATA polling is provided to indicate the completion of a  
byte write cycle. Once a byte write cycle is initiated,  
attempting to read the last byte written will output the  
complement of that data on I/O7 (I/O0–I/O6 are indeter-  
minate) until the programming cycle is complete. Upon  
completion of the self-timed byte write cycle, all I/O’s will  
output true data during a read cycle.  
Figure 5. Byte Write Cycle [CE Controlled]  
t
WC  
ADDRESS  
t
t
t
DL  
AS  
AH  
t
CW  
CE  
OE  
WE  
t
OEH  
t
OES  
t
t
CH  
CS  
HIGH-Z  
DATA OUT  
DATA IN  
DATA VALID  
DS  
t
t
DH  
5089 FHD F07  
Figure 6. DATA Polling  
ADDRESS  
CE  
WE  
OE  
t
OEH  
t
OES  
t
OE  
t
WC  
= X  
I/O  
7
D
= X  
D
D
= X  
OUT  
IN  
OUT  
28C16A F08  
Doc. No. 25033-00 2/98  
7
CAT28C16A  
HARDWARE DATA PROTECTION  
teristics), provides a 5 to 20 ms delay before a write  
sequence, after VCC has reached 3.0V min.  
The following is a list of hardware data protection fea-  
tures that are incorporated into the CAT28C16A.  
(3) Write inhibit is activated by holding any one of OE  
low, CE high or WE high.  
(1) VCC sense provides for write protection when VCC  
falls below 3.0V min.  
(4) Noise pulses of less than 20 ns on the WE or CE  
inputs will not result in a write cycle.  
(2) A power on delay mechanism, tINIT (see AC charac-  
ORDERING INFORMATION  
Prefix  
Device #  
Suffix  
T
CAT  
28C16A  
N
I
-20  
Optional  
Company ID  
Product  
Number  
Temperature Range  
Tape & Reel  
T: 500/Reel  
Blank = Commercial (0˚C to +70˚C)  
I = Industrial (-40˚C to +85˚C)  
A = Automotive (-40˚ to +105˚C)*  
Package  
Speed  
20: 200ns  
P: PDIP  
N: PLCC  
J: SOIC (JEDEC)  
K: SOIC (EIAJ)  
28C16A F09  
* -40˚C to +125˚C is available upon request  
Notes:  
(1) The device used in the above example is a CAT28C16ANI-20T (PLCC, Industrial temperature, 200 ns Access Time, Tape & Reel).  
Doc. No. 25033-00 2/98  
8

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