CAT6217-180TD-GT3 [CATALYST]

150mA CMOS LDO Regulator; 150毫安CMOS LDO稳压器
CAT6217-180TD-GT3
型号: CAT6217-180TD-GT3
厂家: CATALYST SEMICONDUCTOR    CATALYST SEMICONDUCTOR
描述:

150mA CMOS LDO Regulator
150毫安CMOS LDO稳压器

稳压器 调节器 光电二极管 输出元件
文件: 总10页 (文件大小:266K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CAT6217  
150mA CMOS LDO Regulator  
FEATURES  
DESCRIPTION  
„ Guaranteed 150mA output current  
„ Low dropout voltage of 90mV typical at 150mA  
„ Stable with 1μF ceramic output capacitor  
„ External 10nF bypass capacitor for low noise  
„ Quick-start feature  
The CAT6217 is a 150mA CMOS low dropout  
regulator that provides fast response time during load  
current and line voltage changes.  
The quick-start feature allows the use of an external  
bypass capacitor to reduce the overall output noise  
without affecting the turn-on time of just 150μs.  
With zero shutdown current and low ground current of  
55μA typical, the CAT6217 is ideal for battery-  
operated devices with supply voltages from 2.3V to  
5.5V. An internal under voltage lockout circuit disables  
the output at supply voltages under 2.1V typical.  
„ No-load ground current of 55μA typical  
„ Full-load ground current of 80μA typical  
„ ±1.0% output voltage initial accuracy  
„ ±2.0% accuracy over temperature  
„ “Zero” current shutdown mode  
„ Current limit and Under voltage lockout  
„ Thermal protection  
The CAT6217 offers 1% initial accuracy and low  
dropout voltage, 90mV typical at 150mA. Stable  
operation is provided with a 1μF ceramic capacitor,  
reducing required board space and component cost.  
Other features include output short-circuit current limit  
and thermal protection.  
„ Thin SOT23-5 package  
The device is available in the low profile (1mm max  
height) 5-lead thin SOT23 package.  
APPLICATIONS  
„ Cellular phones  
„ Battery-powered devices  
„ Consumer Electronics  
For Ordering Information details, see page 9.  
PIN CONFIGURATION  
TYPICAL APPLICATION CIRCUIT  
TSOT-23 5-Lead  
(1mm height)  
V
2.3V  
to 5.5V  
VIN VOUT  
V
OUT  
IN  
OUT  
1
2
3
5
VIN  
GND  
EN  
VOUT  
BYP  
C
IN  
C
1µF  
1µF  
CAT6217  
4
OFF ON  
EN  
BYP  
GND  
C
(Optional)  
BYP  
10nF  
Top View  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
1
Doc. No. MD-4011 Rev. A  
CAT6217  
PIN DESCRIPTIONS  
BLOCK DIAGRAM  
Pin # Name Function  
VIN  
1
2
VIN Supply voltage input.  
GND Ground reference.  
Enable input (active high); a 2.5MΩ  
VOUT  
V
IN  
LDO  
EN  
V
OUT  
3
EN  
pull-down resistor is provided.  
Optional bypass capacitor connection  
BYP for noise reduction and PSRR  
enhancing.  
Shutdown  
Switch  
Reference  
BYP  
4
5
GND  
VOUT LDO Output Voltage.  
Figure 2. CAT6217 Functional Block Diagram  
PIN FUNCTION  
VIN is the supply pin for the LDO. A small 1μF  
ceramic bypass capacitor is required between the VIN  
pin and ground near the device. When using longer  
connections to the power supply, CIN value can be  
increased without limit. The operating input voltage  
range is from 2.3V to 5.5V.  
The capacitor should be located near the device. ESR  
domain is 5mto 500m. VOUT can deliver a  
maximum guaranteed current of 150mA. A 250Ω  
internal shutdown switch discharges the output  
capacitor in the no-load condition.  
GND is the ground reference for the LDO. The pin  
EN is the enable control logic (active high) for the regulator  
output. It has a 2.5Mpull-down resistor, which  
assures that if EN pin is left open, the circuit is disabled.  
must be connected to the ground plane on the PCB.  
BYP is the reference bypass pin. An optional 0.01μF  
capacitor can be connected between BYP pin and  
GND to reduce the output noise and enhance the  
PSRR at high frequency.  
VOUT is the LDO regulator output. A small 1μF  
ceramic bypass capacitor is required between the VOUT  
pin and ground for stability. For better transient  
response, its value can be increased to 4.7μF.  
ABSOLUTE MAXIMUM RATINGS (1)  
Parameter  
Rating  
Unit  
V
VIN  
0 to 6.5  
-0.3 to VIN+0.3  
+150  
VEN, VOUT  
V
Junction Temperature, TJ  
°C  
mW  
°C  
°C  
kV  
Power Dissipation, PD  
Internally Limited (2)  
Storage Temperature Range, TS  
Lead Temperature (soldering, 5 sec.)  
ESD Rating (Human Body Model)  
-65 to +150  
260  
3
RECOMMENDED OPERATING CONDITIONS (3)  
Parameter  
Range  
Unit  
V
VIN  
2.3 to 5.5  
0 to VIN  
VEN  
V
Junction Temperature Range, TJ  
Package Thermal Resistance (SOT23-5), θJA  
-40 to +125  
235  
°C  
°C/W  
Typical application circuit with external components is shown on page 1.  
Notes:  
(1) Exceeding maximum rating may damage the device  
(2) The maximum allowable power dissipation at any TA (ambient temperature) is PDmax = (TJmax – TA)/θJA. Exceeding the maximum allowable  
power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown.  
(3) The device is not guaranteed to work outside its operating rating.  
Doc. No. MD-4011 Rev. A  
2
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
 
 
 
CAT6217  
ELECTRICAL OPERATING CHARACTERISTICS (1)  
VIN = VOUT + 1.0V, VEN = High, IOUT = 100μA, CIN = COUT = 1µF, ambient temperature of 25ºC (over recommended  
operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range.  
Symbol Parameter  
Conditions  
Min  
-1.0  
-2.0  
Typ  
Max  
+1.0  
+2.0  
Unit  
%
VOUT-ACC Output Voltage Accuracy  
TCOUT Output Voltage Temp. Coefficient  
VR-LINE Line Regulation  
Initial accuracy  
40  
ppm/ºC  
%/V  
-0.2  
+0.2  
+0.4  
1.0  
±0.1  
VIN = VOUT + 1.0V to 5.5V  
IOUT = 100μA to 150 mA  
IOUT = 150mA  
-0.4  
0.6  
90  
55  
80  
VR-LOAD Load Regulation  
%
1.3  
125  
150  
75  
VDROP  
Dropout Voltage (2)  
Ground Current  
mV  
IOUT = 0μA  
IGND  
μA  
90  
IOUT = 150mA  
VEN < 0.4V  
1
IGND-SD Shutdown Ground Current  
PSRR Power Supply Rejection Ratio  
μA  
2
f = 1kHz, CBYP = 10nF  
f = 20kHz, CBYP = 10nF  
VOUT = 0V  
64  
54  
dB  
ISC  
TON  
eN  
Output short circuit current limit  
Turn-On Time  
Output Noise Voltage (3)  
350  
150  
45  
mA  
μs  
CBYP = 10nF  
BW = 10Hz to 100kHz  
μVrms  
ROUT-SH Shutdown Switch Resistance  
250  
2.5  
REN  
VUVLO  
ESR  
Enable pull-down resistor  
MΩ  
Under-voltage lock out (UVLO)  
threshold  
2.1  
V
COUT equivalent series resistance  
5
500  
mΩ  
Enable Input  
VHI  
Logic High Level  
VIN = 2.3 to 5.5V  
VIN = 2.3 to 5.5V  
VEN = 0.4V  
1.8  
V
V
VLO  
Logic Low Level  
0.4  
1
0.15  
1.5  
IEN  
Enable Input Current  
μA  
VEN = VIN  
4
Thermal Protection  
TSD  
Thermal Shutdown  
Thermal Hysteresis  
160  
10  
ºC  
ºC  
THYS  
Notes:  
(1 Specification for 2.85V output version unless specified otherwise.  
(2) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at  
1V differential. During test, the input voltage stays always above the minimum 2.3V.  
(3) Specification for 1.8V output version.  
© 2007 Catalyst Semiconductor, Inc.  
3
Doc. No. MD-4011 Rev. A  
Characteristics subject to change without notice  
 
 
 
CAT6217  
TYPICAL CHARACTERISTICS (shown for 2.85V output version)  
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.  
Dropout Characteristics  
Line Regulation  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.87  
2.86  
2.85  
2.84  
2.83  
2.82  
100μA  
150mA  
0.0 1.0 2.0 3.0 4.0 5.0 6.0  
INPUT VOLTAGE [V]  
2.5 3.0 3.5 4.0 4.5 5.0 5.5  
INPUT VOLTAGE [V]  
Load Regulation  
Output Voltage vs. Temperature  
2.95  
2.90  
2.85  
2.80  
2.75  
2.87  
2.86  
2.85  
2.84  
2.83  
2.82  
0
25 50 75 100 125 150  
OUTPUT LOAD CURRENT [mA]  
-40 -10 20 50 80 110 140  
TEMPERATURE [°C]  
Ground Current vs. Load Current  
Ground Current vs. Temperature  
100  
65  
60  
55  
50  
45  
90  
80  
70  
60  
50  
0
25 50 75 100 125 150  
OUTPUT LOAD CURRENT [mA]  
-40 -10 20  
50  
80 110 140  
TEMPERATURE [°C]  
Doc. No. MD-4011 Rev. A  
4
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT6217  
TYPICAL CHARACTERISTICS (shown for 2.85V output option)  
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.  
Output Short-Circuit Current Limit  
Ground Current vs. Input Voltage  
70  
60  
50  
40  
30  
20  
10  
0
600  
500  
400  
300  
200  
100  
0
VOUT = 0V  
0.0 1.0 2.0 3.0 4.0 5.0 6.0  
0.0 1.0 2.0 3.0 4.0 5.0 6.0  
INPUT VOLTAGE [V]  
INPUT VOLTAGE [V]  
Dropout vs. Temperature (150mA Load)  
Dropout vs. Load Current  
120  
90  
60  
30  
0
200  
150  
100  
50  
0
0
30  
60  
90  
120 150  
-40 -10 20 50 80 110 140  
TEMPERATURE [°C]  
OUTPUT LOAD CURRENT [mA]  
Enable Threshold vs. Input Voltage  
PSRR vs. Frequency (10mA Load)  
1.6  
80  
CBYP = 10nF  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
0.8  
0.4  
0.0  
CBYP = 0  
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
INPUT VOLTAGE [V]  
0.01  
0.1  
1
10  
100  
FREQUENCY [kHz]  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
5
Doc. No. MD-4011 Rev. A  
CAT6217  
TYPICAL CHARACTERISTICS (shown for 2.85V output option)  
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.  
PSRR (30mA Load)  
PSRR (150mA Load)  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
1kHz  
1kHz  
10kHz  
10kHz  
100kHz  
100kHz  
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
VIN - VOUT [mV]  
VIN - VOUT [mV]  
Doc. No. MD-4011 Rev. A  
6
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT6217  
TRANSIENT CHARACTERISTICS (shown for 2.85V output option)  
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.  
Note: All transient characteristics are generated using the evaluation board CAT621XEVAL1.  
Enable Turn-On (100μA Load)  
Enable Turn-Off (100μA Load)  
Enable Turn-On (150mA Load)  
Enable Turn-Off (150mA Load)  
Line Transient Response (3.85V to 4.85V)  
Load Transient Response (0.1mA to 150mA)  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
7
Doc. No. MD-4011 Rev. A  
CAT6217  
PACKAGE OUTLINES  
5-LEAD TSOT-23 (1)(2)  
e
e
SYMBOL  
MIN  
NOM  
MAX  
1.00  
0.10  
0.90  
0.45  
0.20  
A
A1  
A2  
b
0.01  
0.80  
0.30  
0.12  
0.05  
0.87  
E
E1  
c
0.15  
D
2.90 BSC  
2.80 BSC  
1.60 BSC  
0.95 BSC  
1.90 BSC  
0.40  
E
E1  
e
e1  
e1  
L
0.30  
0º  
0.50  
8º  
L1  
L2  
θ
0.60 REF  
0.25 BSC  
D
GAUGE  
PLANE  
A2  
c
A
L2  
θ
L
A1  
b
L1  
2HFor current Tape and Reel information, download the PDF file  
from:  
Notes:  
(1) All dimensions are in millimeters, angles in degrees.  
(2) Refer JEDEC MO-193.  
Doc. No. MD-4011 Rev. A  
8
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
 
 
CAT6217  
EXAMPLE OF ORDERING INFORMATION (1)(2)(3)(5)  
Prefix  
Device #  
Suffix  
CAT  
6217  
-285  
TD  
-G  
T3  
VOUT Voltage (4)  
150: 1.50V  
180: 1.80V  
250: 2.50V  
280: 2.80V  
285: 2.85V  
330: 3.30V  
Package  
TD: TSOT-23  
Lead Finish  
G: NiPdAu  
Company ID  
Product Number  
6217  
Tape & Reel  
T: Tape & Reel  
3: 3000 Units/Reel  
Ordering Number  
VOUT Voltage  
Package  
Quantity per Reel  
CAT6217-150TD-GT3  
CAT6217-180TD-GT3  
CAT6217-250TD-GT3  
CAT6217-280TD-GT3  
CAT6217-285TD-GT3  
CAT6217-330TD-GT3 (4)  
1.50V  
1.80V  
2.50V  
2.80V  
2.85V  
3.30V  
TSOT-23  
TSOT-23  
TSOT-23  
TSOT-23  
TSOT-23  
TSOT-23  
3000  
3000  
3000  
3000  
3000  
3000  
Notes:  
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).  
(2) The standard finish is NiPdAu.  
(3) The device used in the above example is a CAT6217-285TD-GT3 (VOUT = 2.85V, in an TSOT-23 package, NiPdAu, Tape and Reel, 3000 units).  
(4) Standard voltages are 1.50V, 1.80V, 2.50V, 2.80V, and 2.85V. For other voltage options, please contact your nearest Catalyst  
Semiconductor Sales office.  
(5) Top marking for CAT6217 is RT.  
© 2007 Catalyst Semiconductor, Inc.  
9
Doc. No. MD-4011 Rev. A  
Characteristics subject to change without notice  
 
 
 
 
 
REVISION HISTORY  
Date  
Rev. Reason  
Preliminary Revision  
06/21/2007  
A
Copyrights, Trademarks and Patents  
Trademarks and registered trademarks of Catalyst Semiconductor include each of the following:  
Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™ and Quad-Mode™  
Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products.  
CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS  
PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE  
RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING  
OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.  
Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal  
injury or death may occur.  
Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled  
"Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.  
Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical  
semiconductor applications and may not be complete.  
Catalyst Semiconductor, Inc.  
Corporate Headquarters  
2975 Stender Way  
Santa Clara, CA 95054  
Phone: 408.542.1000  
Fax: 408.542.1200  
1Hwww.catsemi.com  
Document No: MD-4011  
Revision:  
A
Issue date:  
06/21/07  

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