CAT64LC40SA-TE13 [CATALYST]

256X16 SPI BUS SERIAL EEPROM, PDSO8, SOIC-8;
CAT64LC40SA-TE13
型号: CAT64LC40SA-TE13
厂家: CATALYST SEMICONDUCTOR    CATALYST SEMICONDUCTOR
描述:

256X16 SPI BUS SERIAL EEPROM, PDSO8, SOIC-8

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟 光电二极管 内存集成电路
文件: 总9页 (文件大小:60K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CAT64LC10/20/40  
1K/2K/4K-Bit SPI Serial E2PROM  
FEATURES  
SPI Bus Compatible  
Commercial, Industrial and Automotive  
Temperature Ranges  
Low Power CMOS Technology  
2.5V to 6.0V Operation  
Power-Up Inadvertant Write Protection  
RDY/BSY Pin for End-of-Write Indication  
1,000,000 Program/Erase Cycles  
100 Year Data Retention  
Self-Timed Write Cycle with Auto-Clear  
Hardware Reset Pin  
Hardware and Software Write Protection  
DESCRIPTION  
TheCAT64LC10/20/40isa1K/2K/4K-bitSerialE2PROM  
which is configured as 64/128/256 registers by 16 bits.  
Each register can be written (or read) serially by using  
the DI (or DO) pin. The CAT64LC10/20/40 is manufac-  
tured using Catalyst’s advanced CMOS E2PROM float-  
ing gate technology. It is designed to endure 1,000,000  
program/erase cycles and has a data retention of 100  
years. The device is available in 8-pin DIP or SOIC  
packages.  
PIN CONFIGURATION  
DIP Package (P)  
SOIC Package (J)  
SOIC Package (S)  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
CS  
SK  
DI  
V
RDY/BUSY  
RESET CS  
V
CC  
CC  
RDY/BUSY  
RESET  
GND  
V
GND  
DO  
DI  
SK  
DI  
RDY/BUSY  
RESET  
GND  
CC  
CS  
DO  
SK  
DO  
5064 FHD F01  
BLOCK DIAGRAM  
PIN FUNCTIONS  
V
GND  
CC  
Pin Name  
CS  
Function  
Chip Select  
SK  
Clock Input  
ADDRESS  
DECODER  
MEMORY ARRAY  
64/128/256 x 16  
DI  
Serial Data Input  
Serial Data Output  
DO  
VCC  
+2.5V to +6.0V Power Supply  
Ground  
DATA  
REGISTER  
GND  
OUTPUT  
BUFFER  
DI  
RESET  
RDY/BUSY  
Reset  
MODE DECODE  
LOGIC  
Ready/BUSY Status  
RESET  
CS  
CLOCK  
GENERATOR  
DO RDY/BUSY  
SK  
64LC10/20/40 F02  
Doc. No. 25057-00 3/98  
© 1998 by Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
1
CAT64LC10/20/40  
ABSOLUTE MAXIMUM RATINGS*  
*COMMENT  
Temperature Under Bias ................. –55°C to +125°C  
Storage Temperature....................... –65°C to +150°C  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
These are stress ratings only, and functional operation of  
the device at these or any other conditions outside of those  
listed in the operational sections of this specification is not  
implied. Exposure to any absolute maximum rating for  
extended periods may affect device performance and  
reliability.  
Voltage on any Pin with  
Respect to Ground(1) ............ –2.0V to +VCC +2.0V  
VCC with Respect to Ground ............... –2.0V to +7.0V  
Package Power Dissipation  
Capability (Ta = 25°C)................................... 1.0W  
Lead Soldering Temperature (10 secs) ............ 300°C  
Output Short Circuit Current(2) ........................ 100 mA  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Min.  
1,000,000  
100  
Max.  
Units  
Cycles/Byte  
Years  
Reference Test Method  
MIL-STD-883, Test Method 1033  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
(3)  
NEND  
(3)  
TDR  
Data Retention  
ESD Susceptibility  
Latch-Up  
(3)  
VZAP  
2000  
Volts  
(3)(4)  
ILTH  
100  
mA  
CAPACITANCE (T = 25°C, f= 1.0 MHz, V  
=6.0V)  
CC  
A
Symbol  
Test  
Max.  
Units  
pF  
Conditions  
VI/O = 0V  
VIN = 0V  
(3)  
CI/O  
Input/Output Capacitance (DO, RDY/BSY)  
Input Capacitance (CS, SK, DI, RESET)  
8
6
(3)  
CIN  
pF  
Note:  
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC  
voltage on output pins is V +0.5V, which may overshoot to V +2.0V for periods of less than 20 ns.  
CC  
CC  
(2) Output shorted for no more than one second. No more than one output shorted at a time.  
(3) This parameter is tested initially and after a design or process change that affects the parameter.  
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V +1V.  
CC  
Doc. No. 25057-00 3/98  
2
CAT64LC10/20/40  
D.C. OPERATING CHARACTERISTICS  
= +2.5V to +6.0V, unless otherwise specified.  
V
CC  
Limits  
Typ.  
Sym.  
Parameter  
Operating Current  
EWEN, EWDS, READ 6.0V  
Min.  
Max.  
Units  
mA  
mA  
mA  
mA  
µA  
Test Conditions  
fSK = 250 kHz  
fSK = 1 MHz  
ICC  
2.5V  
0.4  
1
ICCP Program Current  
2.5V  
6.0V  
2
3
(1)  
ISB  
Standby Current  
0
VIN = GND or VCC  
CS = VCC  
ILI  
Input Leakage Current  
2
µA  
µA  
V
VIN = GND to VCC  
VOUT = GND to VCC  
ILO  
VIL  
VIH  
VIL  
Output Leakage Current  
Low Level Input Voltage, DI  
High Level Input Voltage, DI  
10  
–0.1  
VCC x 0.7  
–0.1  
VCC x 0.3  
VCC + 0.5  
VCC x 0.2  
V
Low Level Input Voltage,  
V
CS, SK, RESET  
VIH  
High Level Input Voltage,  
VCC x 0.8  
VCC + 0.5  
V
CS, SK, RESET  
(2)  
VOH  
High Level Output Voltage 2.5V VCC – 0.3  
V
V
V
V
V
IOH = –10µA  
IOH = –10µA  
IOH = –400µA  
IOL = 10µA  
6.0V VCC – 0.3  
2.4  
(2)  
VOL  
Low Level Output Voltage  
2.5V  
6.0V  
0.4  
0.4  
IOL = 2.1mA  
Note:  
(1) Standby Current (I ) = 0µA (<900nA)  
SB  
(2)  
V
and V spec applies to READY/BUSY pin also  
OH OL  
Doc. No. 25057-00 3/98  
3
CAT64LC10/20/40  
A.C. OPERATING CHARACTERISTICS  
V
= +2.5V to +6.0V, unless otherwise specified.  
CC  
Limits  
Typ.  
Symbol  
tCSS  
tCSH  
tDIS  
Parameter  
CS Setup Time  
Min.  
100  
100  
200  
200  
Max.  
Units  
ns  
CS Hold Time  
ns  
DI Setup Time  
ns  
tDIH  
DI Hold Time  
ns  
tPD1  
Output Delay to 1  
300  
300  
500  
ns  
tPD0  
Output Delay to 0  
ns  
(2)  
tHZ  
Output Delay to High Impendance  
Minimum CS High Time  
Minimum SK High Time  
ns  
tCSMIN  
tSKHI  
250  
1000  
400  
ns  
2.5V  
ns  
4.5V–6.0V  
2.5V  
tSKLOW  
Minimum SK Low Time  
1000  
400  
ns  
4.5V–6.0V  
tSV  
fSK  
Output Delay to Status Valid  
Maximum Clock Frequency  
500  
ns  
2.5V  
250  
1000  
0
kHz  
4.5V–6.0V  
tRESS  
tRESMIN  
tRESH  
tRC  
Reset to CS Setup Time  
Minimum RESET High Time  
RESET to READY Hold Time  
Write Recovery  
ns  
ns  
ns  
ns  
250  
0
100  
(1)(3)  
POWER-UP TIMING  
Symbol  
tPUR  
Parameter  
Min.  
Min.  
Max.  
Units  
Power-Up to Read Operation  
Power-Up to Program Operation  
10  
1
µs  
tPUW  
ms  
WRITE CYCLE LIMIITS  
Symbol  
Parameter  
Max.  
10  
Units  
tWR  
Program Cycle Time  
2.5V  
ms  
4.5V–6.0V  
5
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) This parameter is sampled but not 100% tested.  
(3) t  
and t  
are the delays required from the time V is stable until the specified operation can be initiated.  
PUR  
PUW  
CC  
Doc. No. 25057-00 3/98  
4
CAT64LC10/20/40  
INSTRUCTION SET  
Instruction  
Opcode  
Address  
Data  
Read  
64LC10  
10101000  
10101000  
10101000  
10100100  
10100100  
10100100  
10100011  
10100000  
10100001  
A5 A4 A3 A2 A1 A0 0  
A6 A5 A4 A3 A2 A1 A0  
0
0
D15 - D0  
D15 - D0  
D15 - D0  
D15 - D0  
D15 - D0  
D15 - D0  
64LC20  
64LC40  
64LC10  
64LC20  
64LC40  
A7 A6 A5 A4 A3 A2 A1 A0  
Write  
A5 A4 A3 A2 A1 A0 0  
A6 A5 A4 A3 A2 A1 A0  
0
0
A7 A6 A5 A4 A3 A2 A1 A0  
X X X X X X X X  
Write Enable  
Write Disable  
X X X X X X X X  
[Write All Locations](1)  
X X X X X X X X  
D15–D0  
(2)(3(4)  
Figure 1. A.C. Testing Input/Output Waveform  
(C = 100 pF)  
L
V
V
x 0.8  
x 0.2  
CC  
CC  
V
V
x 0.7  
x 0.3  
CC  
INPUT PULSE LEVELS  
REFERENCE POINTS  
CC  
5064 FHD F03  
Note:  
(1) (Write All Locations) is a test mode operation and is therefore not included in the A.C./D.C. Operations specifications.  
(2) Input Rise and Fall Times (10% to 90%) < 10 ns.  
(3) Input Pulse Levels = V x 0.2 and V x 0.8.  
CC  
CC  
(4) Input and Output Timing Reference = V x 0.3 and V x 0.7.  
CC  
CC  
Doc. No. 25057-00 3/98  
5
CAT64LC10/20/40  
DEVICE OPERATION  
and data to be written are clocked into the DI pin on the  
rising edge of the SK clock. The DO pin is normally in a  
high impedance state except when outputting data in a  
READ operation or outputting RDY/BSY status when  
polled during a WRITE operation.  
The CAT64LC10/20/40 is a 1K/2K/4K-bit nonvolatile  
memory intended for use with all standard controllers.  
The CAT64LC10/20/40 is organized in a 64/128/256 x  
16 format. All instructions are based on an 8-bit format.  
Therearefour16-bitinstructions:READ,WRITE,EWEN,  
andEWDS.TheCAT64LC10/20/40operatesonasingle  
powersupplyrangingfrom2.5Vto6.0Vandithasanon-  
chipvoltagegeneratortoprovidethehighvoltageneeded  
duringaprogrammingoperation.Instructions,addresses  
Theformatforallinstructionssenttothisdeviceincludes  
a 4-bit start sequence, 1010, a 4-bit op code and an 8-  
bit address field or dummy bits. For a WRITE operation,  
Figure 2. Sychronous Data Timing  
RESET  
t
t
t
SKLOW  
SKHI  
RESS  
SK  
t
t
DIH  
DIS  
DI  
t
t
t
CSMIN  
CSS  
CSH  
CS  
t
t
t
t
SV  
PD0, PD1  
HZ  
DO  
t
t
SV  
t
RESH  
RC  
RDY/BUSY  
5064 FHD F04  
Figure 3. Read Instruction Timing  
RESET  
SK  
CS  
DI  
1
0
1
0
1
0
0
0
ADDRESS*  
DO  
D15 D14  
D1 D0  
HIGH  
RDY/BUSY  
* Please check the instruction set table for address  
64LC10/20/40 F05  
Doc. No. 25057-00 3/98  
6
CAT64LC10/20/40  
a 16-bit data field is also required following the 8-bit  
address field.  
Read  
UponreceivingaREADcommandandaddress(clocked  
into the DI pin), the DO pin will output data one tPD after  
the falling edge of the 16th clock (the last bit of the  
address field). The READ operation is not affected by  
the RESET input.  
The CAT64LC10/20/40 requires an active LOW CS in  
order to be selected. Each instruction must be preceded  
by a HIGH-to-LOW transition of CS before the input of  
the 4-bit start sequence. Prior to the 4-bit start sequence  
(1010), the device will ignore inputs of all other logical  
sequence.  
Write  
After receiving a WRITE op code, address and data, the  
device goes into the AUTO-Clear cycle and then the  
Figure 4. Write Instruction Timing  
RESET  
SK  
CS  
DI  
1
0
1
0
0
1
0
0
ADDRESS*  
D15  
D0  
DO  
RDY/BUSY  
64LC10/20/40 F06  
* Please check instruction set table for address  
Figure 5. Ready/BUSY Status Instruction Timing  
RESET  
LOW  
SK  
CS  
WRITE INSTRUCTION  
NEXT INSTRUCTION  
DI  
DO  
HIGH  
RDY/BUSY  
5064 FHD F07  
Doc. No. 25057-00 3/98  
7
CAT64LC10/20/40  
WRITE cycle. The RDY/BSY pin will output the BUSY  
status (LOW) one tSV after the rising edge of the 32nd  
clock (the last data bit) and will stay LOW until the write  
cycle is complete. Then it will output a logical “1” until the  
next WRITE cycle. The RDY/BSY output is not affected  
by the input of CS.  
the device is deselected. The rising edge of the first “1”  
input on the DI pin will reset DO back to the high  
impedance state again.  
The WRITE operation can be halted anywhere in the  
operation by the RESET input. If a RESET pulse occurs  
during a WRITE operation, the device will abort the  
operation and output a READY status.  
AnalternativetogetRDY/BSY statusisfromtheDOpin.  
Duringawritecycle, assertingaLOWinputtotheCS pin  
will cause the DO pin to output the RDY/BSY status.  
Bringing CS HIGH will bring the DO pin back to a high  
impedance state again. After the device has completed  
a WRITE cycle, the DO pin will output a logical “1” when  
NOTE: Data may be corrupted if a RESET occurs while  
the device is BUSY. If the reset occurs before the BUSY  
period, no writing will be initiated. However, if RESET  
occurs after the BUSY period, new data will have been  
written over the old data.  
Figure 6. RESET During BUSY Instruction Timing  
RESET  
SK  
CS  
DI  
1
0
1
0
0
1
0
0
ADDRESS*  
D15  
D0  
DO  
t
WR  
RDY/BUSY  
64LC10/20/40 F08  
* Please check instruction set table for address  
Figure 7. EWEN Instruction Timing  
RESET  
SK  
CS  
DI  
1
0
1
0
0
0
1
1
HIGH-Z  
HIGH  
DO  
RDY/BUSY  
5064 FHD F09  
Doc. No. 25057-00 3/98  
8
CAT64LC10/20/40  
RESET  
ERASE/WRITE ENABLE and DISABLE  
The RESET pin, when set to HIGH, will reset or abort a  
WRITEoperation.WhenRESETissettoHIGHwhilethe  
WRITE instruction is being entered, the device will not  
executetheWRITEinstructionandwillkeepDOinHigh-  
Z condition.  
The CAT64LC10/20/40 powers up in the erase/write  
disabledstate.Afterpower-uporwhilethedeviceisinan  
erase/write disabled state, any write operation must be  
preceded by an execution of the EWEN instruction.  
Once enabled, the device will stay enabled until an  
EWDShasbeenexecutedorapower-downhasoccured.  
The EWDS is used to prevent any inadvertent over-  
writing of the data. The EWEN and EWDS instructions  
have no affect on the READ operation and are not  
affected by the RESET input.  
When RESET is set to HIGH, while the device is in a  
clear/write cycle, the device will abort the operation and  
will display READY status on the RDY/BSY pin and on  
the DO pin if CS is low.  
The RESET input affects only the WRITE and WRITE  
ALL operations. It does not reset any other operations  
such as READ, EWEN and EWDS.  
Figure 8. EWDS Instruction Timing  
RESET  
SK  
CS  
DI  
1
0
1
0
0
0
0
0
HIGH-Z  
HIGH  
DO  
RDY/BUSY  
5064 FHD F10  
ORDERING INFORMATION  
Prefix  
Device #  
Suffix  
CAT  
64LC10  
S
TE13  
I
Optional  
Company ID  
Temperature Range  
Product  
Number  
64LC10: 1K  
64LC20: 2K  
64LC40: 4K  
Tape & Reel  
TE13: 2000/Reel  
Blank = Commercial (0˚C to +70˚C)  
I = Industrial (-40˚C to +85˚C)  
A = Automotive (-40˚ to +105˚C)*  
Package  
P: PDIP  
S: SOIC (JEDEC)  
J: SOIC (JEDEC)  
64LC10/20/40 F11  
* -40˚C to +125˚C is available upon request  
Notes:  
(1) The device used in the above example is a 64LC10SI-TE13 (SOIC, Industrial Temperature, Tape & Reel)  
Doc. No. 25057-00 3/98  
9

相关型号:

CAT64LC40SATE13

1K/2K/4K-Bit SPI Serial E2PROM
CATALYST

CAT64LC40SI

EEPROM, 256X16, Serial, CMOS, PDSO8, SOIC-8
CATALYST

CAT64LC40SI

IC,SERIAL EEPROM,256X16,CMOS,SOP,8PIN,PLASTIC
ONSEMI

CAT64LC40SI-2.5

SPI Serial EEPROM
ETC

CAT64LC40SI-GT3

4 kb SPI Serial EEPROM
ONSEMI

CAT64LC40SI-T3

4 kb SPI Serial EEPROM
ONSEMI

CAT64LC40SI-TE13

256X16 SPI BUS SERIAL EEPROM, PDSO8, SOIC-8
CATALYST

CAT64LC40SI-TE7

SPI Serial EEPROM
ETC

CAT64LC40SITE13

1K/2K/4K-Bit SPI Serial E2PROM
CATALYST

CAT64LC40SITE13

IC 256 X 16 SPI BUS SERIAL EEPROM, PDSO8, SOIC-8, Programmable ROM
ONSEMI

CAT64LC40STE13

1K/2K/4K-Bit SPI Serial E2PROM
CATALYST

CAT64LC40STE13

256X16 SPI BUS SERIAL EEPROM, PDSO8, SOIC-8
ONSEMI