1N486B [CDI-DIODE]
GENERAL PURPOSE SILICON DIODES; 通用硅二极管
| 型号： | 1N486B |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | GENERAL PURPOSE SILICON DIODES |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N483B
1N485B
1N486B
• AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
0.085/0.125
2.16/3.18
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating:1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
V
V
I
I
I
FSM
RM
RWM
O
O
T
= 150°C
T
= 1/120 s
A
P
T
= 25°C
A
V (pk)
807200
0 50182018200
250225 0 50
V (pk)
mA
mA
A
1N483B
1N485B
1N486B
0502
FIGURE 1
2
20
TYPE
V
I
V
I
V
I
V
F
R1 at RWM
R2 at RM
R3 at RWM
DESIGN DATA
@100mA
T
= 25°C
T
= 25°C
T
= 150°C
A
A
A
V dc
nA dc
µA
µA dc
CASE: Hermetically sealed glass
1N483B
1N485B
1N486B
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
25
25
25
100
100
100
5
5
5
case. DO-7 outline
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
200 ˚C/W maximum
):
OJEC
THERMAL IMPEDANCE: (Z
˚C/W maximum
): 70
JX
O
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
IN483B, IN485B and IN486B
1000
100
10
1
0.1
.3
.4
.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
100
10
1
0.1
.01
.001
NOTE :
All temperatures shown on graphs are
junction temperatures
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
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