概述
规格参数
数据手册CD1A30 概述
1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS 1 AMP肖特基整流器芯片 整流二极管
CD1A30 规格参数
| 生命周期： | Transferred | 包装说明： | DIE-1 |
| Reach Compliance Code： | unknown | 风险等级： | 5.75 |
| Is Samacsys： | N | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| JESD-30 代码： | S-XUUC-N1 | 元件数量： | 1 |
| 端子数量： | 1 | 最高工作温度： | 125 °C |
| 最低工作温度： | -55 °C | 最大输出电流： | 1 A |
| 封装主体材料： | UNSPECIFIED | 封装形状： | SQUARE |
| 封装形式： | UNCASED CHIP | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 30 V | 表面贴装： | YES |
| 技术： | SCHOTTKY | 端子形式： | NO LEAD |
| 端子位置： | UPPER | Base Number Matches： | 1 |
CD1A30 数据手册
通过下载CD1A30数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载•
1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL
PRF-19500/586
CD5817 thru CD5819
and
CD6759 thru CD6761
and
CD1A20 thru CD1A100
• 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @ +55°C
Derating: 14.3 mA / °C above +55°C
BACKSIDE IS CATHODE
FIGURE 1
WORKING PEAK
REVERSE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
CDI
TYPE
MAXIMUM FORWARD VOLTAGE
DESIGN DATA
VOLTAGE
NUMBER
V
RWM
V
@0.1A
V
@1.0A
I
@25°C
I @100°C
R
F
F
R
METALLIZATION:
VOLTS
20
VOLTS
0.36
VOLTS
0.60
mA
mA
5.0
5.0
5.0
5.0
Top: (Anode).........................Al
CD5817
CD5818
CD5819
JHC, JKC
5819
0.10
0.10
0.10
0.05
Back: (Cathode) ....................Au
AL THICKNESS................25,000 Å Min
GOLD THICKNESS............4,000 Å Min
CHIP THICKNESS.............. ........10 Mils
30
0.36
0.60
40
0.36
0.60
45
0.34
0.49
CD6759
CD6760
CD6761
JHC, JKC
6761
60
80
0.38
0.38
0.38
0.38
0.75
0.75
0.75
0.69
0.10
0.10
0.10
0.10
6.0
6.0
100
100
6.0
TOLERANCES: ALL
Dimensions + 2 mils
12.0
CD1A20
CD1A30
CD1A40
CD1A50
CD1A60
CD1A80
CD1A100
20
30
0.36
0.36
0.36
0.36
0.38
0.38
0.38
0.60
0.60
0.60
0.60
0.75
0.75
0.75
0.10
0.10
0.10
0.10
0.10
0.10
0.10
5.0
5.0
40
5.0
50
5.0
60
12.0
12.0
12.0
80
100
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
CD5817 thru CD5819
and
CD6759 thru CD6761
and
CD1A20 thru CD1A100
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
10.0
1.0
0.1
CD5819
CD5818
CD5817
0.01
0.001
+25
+50
+75
+100
+125
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 1
TYPICAL FORWARD VOLTAGE
100.0
10.0
1.0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
F
FIGURE 2
CD1A30 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| CD1A30E3 | MICROSEMI | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DIE-1 | 获取价格 |
|
| CD1A40 | CDI-DIODE | 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | 获取价格 |
|
| CD1A40E3 | MICROSEMI | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DIE-1 | 获取价格 |
|
| CD1A50 | CDI-DIODE | 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | 获取价格 |
|
| CD1A50E3 | MICROSEMI | Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DIE-1 | 获取价格 |
|
| CD1A60 | CDI-DIODE | 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | 获取价格 |
|
| CD1A60E3 | MICROSEMI | Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DIE-1 | 获取价格 |
|
| CD1A80 | CDI-DIODE | 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS | 获取价格 |
|
| CD1A80E3 | MICROSEMI | Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DIE-1 | 获取价格 |
|
| CD1AM | CRYSTEKMICROWAVE | Quartz Crystal Leaded HC49 Crystal | 获取价格 |
|
CD1A30 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
