JAN1N4129DUR-1 [CDI-DIODE]
Zener Diode, 62V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA, 2 PIN;
| 型号： | JAN1N4129DUR-1 |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | Zener Diode, 62V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA, 2 PIN 测试 二极管 |
| 文件： | 总25页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 18 August 2007.
INCH-POUND
MIL-PRF-19500/435H
18 May 2007
SUPERSEDING
MIL-PRF-19500/435G
10 November 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES
1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,
1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are
provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for
each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.
* 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).
* 1.3 Maximum ratings Unless otherwise specified TC = 25°C. Maximum ratings are as shown in maximum test
ratings herein (see 3.8), and as follows:
a.
PTL = 500 mW (DO-35) at TL = 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). (Derate IZ to 0.0 mA dc at +175°C).
b.
c.
P
TEC = 500 mW (DO-213AA) at TEC = 125°C. (Derate to 0 at 175°C). -65°C ≤ TJ ≤ +175°C; -65°C ≤ TSTG
≤ +175°C.
P
= 400 mW, T = +55°C. (Derate to 0 at +55°C).
A
TPCB
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at http://assist.daps.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/435H
* 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in primary test ratings herein
(see 3.8) and as follows:
a. 1.8 V dc ≤ Vz ≤ 100 V dc.
b. RθJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-35) mounting conditions (see figure 4).
c. Noise density see 4.5.5 and figure 5.
d. RθJEC = 100°C/W (maximum) junction to end-caps (DO-213AA).
e. See figures 6, 7, and 8 for derating curves. TA = +75°C for both axial and MELF (US) on printed circuit board
(PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .05 inch (1.27 mm) x
.087 inch (2.21 mm); pads (Axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (0.762 mm) x 1 inch (25.4
mm) long, axial lead length L ≤ .125 inch (≤ 3.18 mm); R
with a defined thermal resistance condition
θJA
included is measured at I = 1 A.
O
f.
R
θJA
= 300°C/W. Junction to ambient including PCB see note 1.4.e.
g. For derating see figure 7.
h. For thermal impedance curves, see figures 9, 10, and 11.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or
http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/435H
Ltr
Dimensions
Notes
Inches
Millimeters
Min
Min
.055
.120
.018
Max
.107
.300
.022
1.500
.050
Max
2.72
7.62
0.56
38.10
1.27
BD
BL
LD
LL
1.40
3.05
3
3
0.46
1.000
25.40
4
LL1
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be
included within this cylinder but shall not be subject to minimum limit of BD. The BL
dimension shall include the entire body including slugs.
4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities
other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Semiconductor device, diode, types 1N4099-1 through 1N4135-1
and 1N4614-1 through 1N4627-1 (DO-35).
3
MIL-PRF-19500/435H
Symbol
Dimensions
Inches
Millimeters
Min
Max
Min
Max
BD
ECT
BL
.063
.016
.130
.067
.022
.146
1.60
0.41
3.30
1.70
0.56
3.71
S
.001 min
0.03 min
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions 1N4099UR-1 through 1N4135UR-1 and
1N4614UR-1 through 1N4627UR-1 (DO-213AA).
4
MIL-PRF-19500/435H
JANHCA and JANKCA die
dimensions
JANHCB and JANKCB die
dimensions
Ltr
Inches
Millimeters
Ltr
Inches
Min
Millimeters
Min
.021
.013
Max
.025
.017
Min
0.53
0.33
Max
0.63
0.43
Max
.028
.021
Min
0.61
0.43
Max
0.71
0.53
A
B
A
B
.024
.017
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The JANHCA and JANKCA die thickness is .010 (0.25 mm) ± .002 inches (0.05 mm).
Anode metallization:
Al, thickness = 25,000 Å minimum; cathode metallization: Au, thickness = 4000 Å
minimum.
4. The JANHCB and JANKCB die thickness is .010 (0.25 mm) ± .002 inches (0.05 mm).
Anode metallization:
Al, thickness = 40,000 Å minimum; cathode metallization: Au, thickness = 5,000 Å
minimum.
5. Circuit layout data: For zener operation, cathode must be operated positive with respect
to anode.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 3. Physical dimensions JANHC and JANKC die.
5
MIL-PRF-19500/435H
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows:
C
D
....................................................2 percent voltage tolerance.
....................................................1 percent voltage tolerance.
TEC ...................................................Temperature of end-cap.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1, 2, and 3 herein.
3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where
a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Diode construction. All devices shall be in accordance with the requirements of MIL-PRF-19500.
3.4.3 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction or
straight through construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500).
3.4.4 JANS construction. Construction shall be dash one or straight through construction, category I or II
metallurgical bond in accordance with MIL-PRF-19500.
* 3.4.5 Package outline. This specification contains one standard package; DO-35. Any user of this specification
that has a specific package outline requirement shall specify their preference in the acquisition order. If package style
is not specified, the manufacturer may supply either package. Surface mount devices are in a
DO-213AA package.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500 and as specified herein.
3.5.1 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately,
for surface mount (UR) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the
cathode end may be used. No color coding will be permitted.
* 3.5.2 Marking of UR suffix version devices. For UR suffix (surface mount) devices only, all marking (except
polarity) may be omitted from the body of the device, but shall be retained on the initial container.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6.1 Selection of tight tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX,
JANTXV, or JANS devices which have successfully completed all applicable screening, table I, and groups B and C
testing as 5 percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2 at the
tightened tolerances. The PTL or PTEC for C and D suffix devices shall be maintained at 30°C ±2°C for V correlation
Z
on tight tolerances.
6
MIL-PRF-19500/435H
* 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2, 4.4.3,
table I, II, and III.
3.8 Maximum and primary electrical characteristics test requirements. Maximum test ratings for voltage regulator
diodes are specified in table III herein.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4, tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case
qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II
tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first
inspection lot of this revision to maintain qualification.
4.2.2 JANHC and JANKC devices. JANHC and JANKC devices shall be qualified in accordance with
MIL-PRF-19500.
4.2.3 Construction verification. Cross sectional photos from three devices shall be submitted in the qualification
report.
7
MIL-PRF-19500/435H
* 4.3 Screening (JAN, JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with appendix E,
table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance
with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
appendix E, table
E-IV of
Measurement
MIL-PRF-19500)
JANS level
JANTXV and JANTX level
Not required
1a
1b
2
Required
Required
Not required
Required
Required (JANTXV only)
Not required
Required
3a
3b
(1) 3c
4, 5, and 6
Not applicable
Required (see 4.3.2)
Not applicable
Required
Required on Nom VZ > 10 V, IR1 and VZ
Required on Nom VZ > 10 V
Required
Not applicable
Required (see 4.3.2)
Not applicable
Not required
Not applicable
Not applicable
Required
8
9
10
11
I
R1 and VZ
∆IR1 ≤ 100 percent of initial reading or 10
nA whichever is greater. ∆VZ ≤ 2 percent
of initial reading.
12
Required, see 4.3.3
Required,
t = 240 hours.
See 4.3.3, t = 48 hours
(2) 13
Required
Subgroup 2 of table I herein; ∆IR1 ≤ 100
percent of initial reading or 10 nA
whichever is greater; ∆VZ ≤ 2 percent of
initial reading.
Required
Required
Subgroup 2 of table I herein; ∆IR1 ≤ 100
percent of initial reading or 10 nA whichever
is greater; ∆VZ ≤ 2 percent of initial reading.
Not required
15
16
Not required
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
(2) PDA = 5 percent for screen 13, applies to ∆IR1, ∆VZ,, IR1 and VZ (JANS only).
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix
G of MIL-PRF-19500.
4.3.1.1 JAN product. JAN product will have temperature cycling and thermal impedance testing performed in
accordance with MIL-PRF-19500, JANTX level screening requirements.
8
MIL-PRF-19500/435H
4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3101 or 4081 as applicable of MIL-STD-750 using the guidelines in that method for determining I , I , t , t (and
M
H H MD
V
C
where appropriate). See table II, subgroup 4 herein. Measurement delay time (tMD) = 70 us max.
4.3.3 Free air power burn-in conditions. Power burn-in conditions are as follows (see 4.5.4): I
= IZ(PCB). T
A
Z(min)
= 75°C maximum. Test conditions shall be in accordance with method 1038 of MIL-STD-750, condition B. Adjust I
Z
or T to achieve the required T . T = 125°C minimum. With approval of the qualifying activity and preparing activity,
A
J
J
alternate burn-in criteria (hours, bias conditions, T , mounting conditions) may be used for JANTX and JANTXV
J
quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing site’s burn-in data
and performance history will be essential criteria for burn-in modification approval.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
* 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of
MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.
* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF19500
and herein. Electrical measurements (end-points) requirements shall be in accordance with table I, subgroup 2
herein.
* 4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
Method
2101
Condition
Decap analysis scribe and break only.
2,000 cycles
B4
1037
B5
B6
1027
IZM = column 10 of table III minimum for 1,000 hours; adjust IZ or TA to
achieve TJ = +175°C minimum. Marking legibility requirements shall not
apply.
3101
RθJEC = 100°C/W (max) at zero lead length (DO-213AA),
or
+25°C ≤ TR ≤ +35°C (see 4.5.4). RθJL = 250°C/W (max)
4081
at L = .375 inch (9.53 mm), (DO-35).
9
MIL-PRF-19500/435H
* 4.4.2.2 Group B inspection, appendix E, table E-VIb (JAN, JANTX, JANTXV) of MIL-PRF-19500.
Subgroup
B2
Method
1056
Condition
0°C to +100°C, 10 cycles.
-55°C to +175°C, 25 cycles.
B2
1051
B3
1027
2101
IZM = column 10 of table III herein minimum. Adjust IZ or TA to ensure a
TJ = +150°C (min).
B4
B5
Decap analysis scribe and break only.
Not applicable.
B6
1032
TA = +175°C.
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points)
requirements shall be in accordance with table I, subgroup 2 herein.
Subgroup
C2
Method
1056
Condition
0°C to +100°C, 10 cycles.
C2
2036
Tension: condition A; 4 pounds; t = 15 seconds (not applicable to "UR"
suffix devices). Lead fatigue: Condition E, (not applicable to "UR" suffix
devices).
C2
C3
1071
Test condition E.
Not applicable.
C5
C6
4081
1027
See 4.3.2, RθJL and RθJEC.
IZM = column 10 of table III minimum. Adjust IZ or TA to ensure a
TJ = +150°C (min).
C7
C8
Not applicable.
4071
IZ = 250 µA dc, TA = +25°C ± 5°C, T2 = +125°C, αVZ = column 8 of
table III, sampling plan = 22 devices, c = 0.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and in table II herein. Electrical measurements (end-
points) requirements shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Surge current (IZSM). The peak currents shown in column 5 of table III shall be applied in the reverse
direction and these shall be superimposed on the current (IZ = 250 µA dc) a total of five surges at 1 minute intervals.
Each individual surge shall be one-half square-wave-pulse of 1/120 second duration or an equivalent one-half
sinewave with the same effective rms current.
10
MIL-PRF-19500/435H
4.5.2 Regulator voltage measurements. The test current shall be applied until thermal equilibrium is attained (20
±2 seconds maximum) prior to reading the breakdown voltage. For this test, the diode shall be suspended by its
leads with mounting clips whose inside edge is located at .375 inch (9.53 mm) from the body and the mounting clips
shall be maintained at a temperature of +25°C +8°C, -2°C. This measurement may be performed after a shorter time
following application of the test current than that which provides thermal equilibrium if correlation to stabilized
readings can be established to the satisfaction of the qualifying activity. The breakdown voltage on JANHC and
JANKC shall be read with a pulse measurement of 10 ms (max).
4.5.3 Temperature coefficient of regulator voltage (αVZ). The device shall be temperature stabilized with current
applied prior to reading regulator voltage at the specified ambient temperature as specified in table I herein, subgroup
7.
4.5.4 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that each
DUT still sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is maintained through-
out the burn-in period. Use method 3100 of MIL-STD-750 to measure TJ.
* 4.5.5 Noise density. Noise density shall be measured using a noise density test circuit as shown on figure 5.
Place a low-noise resistor, equivalent in value to the dynamic impedance of the diode under test, in the test clips and
adjust test current (IZT) and measure output-noise voltage. Remove resistor, insert diode under test in test clips,
readjust test current to 250 µA dc and measure output-noise voltage again. To obtain noise density (ND), subtract
rms resistor output-noise voltage from rms diode output-noise voltage and divide by product of overall system gain
and square root of bandwidth. All measurements shall be made at +25°C.
4.5.6 Decap internal visual scribe and break. Scratch glass at cavity area with diamond scribe. Carefully snap
open. Using 30X magnification examine the area where die (or bonding material) are in contact with the plugs, verify
metallurgical bonding area. If the verification of the metallurgical bonding area is in question with test method 3101 of
MIL-STD-750, and test condition and limits herein, (Z ) shall be used to determine suitability for use.
θJX
11
MIL-PRF-19500/435H
* TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Symbol
Limits 2/
Unit
Method
2071
Conditions
Min
Max
Visual and mechanical
examination
Subgroup 2
Forward voltage
4011
4016
IF = 200 mA dc
VF
IR1
1.1
V dc
Reverse current leakage
DC method; VR = column 6 of
table III
Column 7
µA dc
Column 2
Column 2
Regulator voltage (see
4.5.2)
4022
3101
VZ
-V tol
Z
+V tol
Z
V dc
IZ = 250 µA dc
Thermal impedance
Subgroup 3
See 4.3.2
ZθJX
°C/W
µA dc
High-temperature
operation
TA = +150°C
Reverse current
Subgroup 4
4016
4051
DC method; VR = column 6 of
table III
IR2
Column 3
Small-signal reverse
breakdown impedance
ZZT
Column 4
Column 9
Ohms
IZ = 250 µA dc;
ISIG = 25 µA ac rms
Noise density (see 4.5.5)
Subgroup 5
ND
IZ = 250 µA dc
µV/√ Hz
Not applicable
Subgroup 6
Surge current
4066
4071
See 4.5.1
Electrical measurements
Subgroup 7
Table I, subgroup 2
JANS only
Temperature coefficient of
regulator voltage (see
4.5.3)
Column 8
IZ = 250 µA dc; T1 = +25°C,
±5°C; T2 = T1 +100°C
αVZ
%/°C
1/ For sampling plan, see MIL-PRF-19500.
2/ Column references are to table III herein.
12
MIL-PRF-19500/435H
* TABLE II. Group E inspection (all quality levels) – for qualification and requalification only.
Inspection 1/
MIL-STD-750
Conditions
Qualification conformance
inspection (sampling plan)
Method
1051
45 devices, c = 0
Subgroup 1
Temperature cycling
500 cycles.
Electrical measurements
See table I, subgroup 2.
45 devices, c = 0
Subgroup 2
Intermittent life
1037
6,000 cycles. IZ = column 10 of table III.
See table I, subgroup 2.
Electrical measurements
Subgroup 4
N/A
Thermal impedance curves
Subgroups 5 and 6
Not applicable
See MIL-PRF-19500.
Subgroup 8
n = 45
Resistance to glass
cracking
1057
Condition B. Cool down after solder immersion
is permitted. Test until failure occurs on all
devices or to a maximum of 25 cycles,
whichever comes first.
1/ A separate sample may be pulled for each test.
13
MIL-PRF-19500/435H
* TABLE III. Test ratings, primary electrical characteristics. 1/
Col 1
2/
Col 2
Col 3
Col 4
Col 5
Col 6
VR
Col 7
IR
Col 8
Col 9
ND
Col 10
IZPCB
VZ
nom
IR
at
ZZT
max
IZSM
(surge)
αVZ
T1 = +25°C
T2 =
+150°C
+125°C
___
µV/ √ Hz
Volts
ohm
mA
Volts
mA
µA dc
µA dc
%/°C
1N4614-1
1N4615-1
1N4616-1
1N4617-1
1N4618-1
1.8
2.0
2.2
2.4
2.7
10.0
8.0
6.0
4.0
2.0
1,200
1,250
1,300
1,400
1,500
1,600
1,500
1,350
1,250
1,100
1.0
1.0
1.0
1.0
1.0
3.5
2.5
2.0
1.0
0.5
-0.075
-0.075
-0.075
-0.075
-0.075
1
1
1
1
1
120
110
100
95
90
1N4619-1
1N4620-1
1N4621-1
1N4622-1
1N4623-1
3.0
3.3
3.6
3.9
4.3
1.0
7.0
10.0
5.0
1,600
1,650
1,700
1,650
1,600
1,025
950
875
825
800
1.0
1.5
2.0
2.0
2.0
0.4
3.5
3.5
2.5
2.0
-0.075
-0.075
-0.065
-0.060
-0.050
1
1
1
1
1
87
85
83
80
77
4.0
1N4624-1
1N4625-1
1N4626-1
1N4627-1
1N4099-1
4.7
5.1
5.6
6.2
6.8
10.0
10.0
10.0
10.0
5.0
1,550
1,500
1,400
1,200
200
750
725
700
650
650
3.0
3.0
4.0
5.0
5.2
5.0
5.0
5.0
5.0
1.0
+.020,-.050
+.030,-.045
+.040,-.020
+.050,-.010
+.060
1
2
4
5
40
75
70
65
61
56
1N4100-1
1N4101-1
1N4102-1
1N4103-1
1N4104-1
7.5
8.2
8.7
9.1
10.0
5.0
5.0
5.0
5.0
5.0
200
200
200
200
200
650
650
650
650
650
5.7
6.3
6.7
7.0
7.6
1.0
0.5
0.5
0.5
0.5
+.065
+.070
+.075
+.080
+.080
40
40
40
40
40
51
46
44
42
38
1N4105-1
1N4106-1
1N4107-1
1N4108-1
1N4109-1
11.0
12.0
13.0
14.0
15.0
5.0
5.0
5.0
5.0
5.0
200
200
200
200
100
590
540
500
464
433
8.5
9.2
9.9
10.7
11.4
0.05
0.05
0.05
0.05
0.05
+.080
+.080
+.080
+.085
+.085
40
40
40
40
40
35
32
29
27
25
See footnotes at end of table.
14
MIL-PRF-19500/435H
* TABLE III. Test ratings, primary electrical characteristics - Continued. 1/
Col 1
2/
Col 2
Col 3
Col 4
Col 5
Col 6
VR
Col 7
IR
Col 8
αVZ
T1 = +25°C
T2 =
Col 9
ND
Col 10
IZPCB
VZ
nom
IR
at
ZZT
max
IZSM
(surge)
+150°C
+125°C
___
µV/ √ Hz
Volts
Ohms
mA
volts
mA
µA dc
µA dc
%/°C
1N4110-1
1N4111-1
1N4112-1
1N4113-1
1N4114-1
16.0
17.0
18.0
19.0
20.0
5.0
5.0
5.0
2.5
2.5
100
100
100
150
150
406
382
361
342
325
12.2
13.0
13.7
14.5
15.2
0.05
0.05
0.05
0.05
0.01
+.085
+.090
+.090
+.090
+.090
40
40
40
40
40
24
22
21
20
19
1N4115-1
1N4116-1
1N4117-1
1N4118-1
1N4119-1
22.0
24.0
25.0
27.0
28.0
2.5
2.5
2.5
2.5
2.5
150
150
150
150
200
295
271
260
240
232
16.8
18.3
19.0
20.5
21.3
0.01
0.01
0.01
0.01
0.01
+.090
+.090
+.090
+.090
+.095
40
40
40
40
40
17
16
15
14
14
1N4120-1
1N4121-1
1N4122-1
1N4123-1
1N4124-1
30.0
33.0
36.0
39.0
43.0
2.5
2.5
2.5
2.5
2.5
200
200
200
200
250
216
197
180
166
151
22.8
25.1
27.4
29.7
32.7
0.01
0.01
0.01
0.01
0.01
+.095
+.095
+.095
+.095
+.095
40
40
40
40
40
13
12
11
9.8
8.9
1N4125-1
1N4126-1
1N4127-1
1N4128-1
1N4129-1
47.0
51.0
56.0
60.0
62.0
4.0
5.0
5.0
5.0
5.0
250
300
300
400
500
138
127
116
108
105
35.8
38.8
42.6
45.6
47.1
0.01
0.01
0.01
0.01
0.01
+.095
+.100
+.100
+.100
+.100
40
40
40
40
40
8.1
7.5
6.7
6.4
6.1
1N4130-1
1N4131-1
1N4132-1
1N4133-1
1N4134-1
68.0
75.0
82.0
87.0
91.0
7.0
7.0
8.0
8.0
10.0
700
700
800
1,000
1,200
95
86
79
75
71
51.7
57.0
62.4
66.2
69.2
0.01
0.01
0.01
0.01
0.01
+.100
+.100
+.100
+.100
+.100
40
40
40
40
40
5.6
5.1
4.6
4.4
4.2
1N4135-1
100.0
10.0
1,600
65
76.0
0.01
+.100
40
3.8
1/ Unless otherwise specified TC = 25°C.
2/ Applies to all voltage tolerance devices (example: 1N4099-1 is ±5 percent, 1N4099C-1 is ±2 percent, and
1N4099D-1 is ±1 percent tolerance).
15
MIL-PRF-19500/435H
NOTE: LS = lead spacing = .375 inch (9.53 mm) for non-surface mount devices and 0 inch for
surface mount devices.
FIGURE 4. Mounting conditions.
NOTES:
1. Input voltage and lead resistance should be high so that zener can be driven from a constant current
source.
2. Input impedance of band pass filter should be high compared with the dynamic impedance of the
diode under test.
3. Filter bandwidth characteristics shall be as follows:
a. f = 2,000 Hz.
o
b. Shape factor, -40 db to -3 dB, approximately 2.
c. Passband at the -3 dB is 1,000 Hz ±50 Hz to 3,000 Hz ±150 Hz.
d. Passband at the -40 dB is 500 Hz ±50 Hz to 6,000 Hz ±600 Hz.
FIGURE 5. Circuit for determination of noise density.
16
MIL-PRF-19500/435H
Temperature-Power Derating Curve
DO-7, DO-35
600
500
400
300
200
100
0
25
DC Operation
Thermal Resistance Junction to Leads 3/8" = 250ºC/W
50
75
100
125
150
175
200
Tl (ºC) (Leads 3/8")
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate power for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and power rating specified.
J
(See 1.3 herein.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T
J
J
in their application.
* FIGURE 6. Temperature-power derating curve (DO-35).
17
MIL-PRF-19500/435H
Temperature-Power Derating Curve
DO-213AA
600
500
400
300
200
100
0
25
DC Operation
Thermal Resistance Junction to End Cap = 100ºC/W
50
75
100
125
150
175
200
Tec (ºC) (End Cap)
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate power for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and power rating specified.
J
(See 1.3 herein.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T
J
J
in their application.
FIGURE 7. Temperature-power derating curve (DO-213AA).
18
MIL-PRF-19500/435H
Temperature-Power Derating Curve
DO-7, DO-35
450
400
350
300
250
200
150
100
50
0
25
DC Operation
Thermal Resistance Junction to PCB = 300ºC/W
50
75
100
125
150
175
200
Tpcb (ºC) (PCB)
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate power for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and power rating specified.
J
(See 1.3 herein.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T
J
J
in their application.
FIGURE 8. Temperature-power derating curve (PCB).
19
MIL-PRF-19500/435H
Thermal Impedance
1000
100
10
1
0.0001
0.001
0.01
0.1
Time (s)
1
10
100
1000
Thermal impedance DO-35 PCB mount, FR4, 1oz Cu, 2.0 x 3.4 inches (50 x 87 mm) pad (MELF) and 3.6 inches
(92mm) diameter (axial with .125 inch (3.18 mm) lead length) at TA = 25°C.
NOTE: Thermal resistance = 300°C/W. Maximum power rating = 400 mW at TA = 55°C.
* FIGURE 9. Thermal impedance DO-35 PCB mount.
20
MIL-PRF-19500/435H
Thermal Impedance
1000
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Thermal impedance DO-35 axial, TJ = 25°C at .375 inch (9.525 mm) from body.
NOTE: Thermal resistance = 250°C/W. Maximum power rating = 500 mW at TJ = 50°C.
* FIGURE 10. Thermal impedance DO-35 axial.
21
MIL-PRF-19500/435H
Thermal Impedance
1000
100
10
1
0.0001
0.001
0.01
0.1
1
10
Time (s)
Thermal impedance DO-213A MELF, T = 25°C.
ec
NOTE: Thermal resistance = 100°C/W. Maximum power rating = 500 mW at T = 125°C.
ec
* FIGURE 11. Thermal impedance DO-213A MELF.
22
MIL-PRF-19500/435H
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
* (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The
notes specified in MIL-PRF-19500 are applicable to this specification.)
* 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail
vqe.chief@dla.mil.
6.4 Substitution information.
6.4.1 Substitutability of 2 percent and 1 percent tolerance devices. Devices of tighter tolerance are a direct one
way substitute for the looser tolerance devices (example: JANTX1N4614D-1 substitutes for JANTX1N4614-1).
23
MIL-PRF-19500/435H
6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example: JANHCA1N4614) will be identified on the QML.
JANC ordering information
PIN
(1)
Manufacturer CAGE
PIN
(1)
Manufacturer CAGE
43611
(2)
12954
(2)
43611
(2)
12954
(2)
1N4099-1
1N4100-1
1N4101-1
1N4102-1
1N4103-1
JANHCA1N4099
JANHCA1N4100
JANHCA1N4101
JANHCA1N4102
JANHCA1N4103
JANHCB1N4099
JANHCB1N4100
JANHCB1N4101
JANHCB1N4102
JANHCB1N4103
1N4124-1
1N4125-1
1N4126-1
1N4127-1
1N4128-1
JANHCA1N4124
JANHCA1N4125
JANHCA1N4126
JANHCA1N4127
JANHCA1N4128
JANHCB1N4124
JANHCB1N4125
JANHCB1N4126
JANHCB1N4127
JANHCB1N4128
1N4104-1
1N4105-1
1N4106-1
1N4107-1
1N4108-1
JANHCA1N4104
JANHCA1N4105
JANHCA1N4106
JANHCA1N4107
JANHCA1N4108
JANHCB1N4104
JANHCB1N4105
JANHCB1N4106
JANHCB1N4107
JANHCB1N4108
1N4129-1
1N4130-1
1N4131-1
1N4132-1
1N4133-1
JANHCA1N4129
JANHCA1N4130
JANHCA1N4131
JANHCA1N4132
JANHCA1N4133
JANHCB1N4129
JANHCB1N4130
JANHCB1N4131
JANHCB1N4132
JANHCB1N4133
1N4109-1
1N4110-1
1N4111-1
1N4112-1
1N4113-1
JANHCA1N4109
JANHCA1N4110
JANHCA1N4111
JANHCA1N4112
JANHCA1N4113
JANHCB1N4109
JANHCB1N4110
JANHCB1N4111
JANHCB1N4112
JANHCB1N4113
1N4134-1
1N4135-1
1N4614-1
1N4615-1
1N4616-1
JANHCA1N4134
JANHCA1N4135
JANHCA1N4614
JANHCA1N4615
JANHCA1N4616
JANHCB1N4134
JANHCB1N4135
JANHCB1N4614
JANHCB1N4615
JANHCB1N4616
1N4114-1
1N4115-1
1N4116-1
1N4117-1
1N4118-1
JANHCA1N4114
JANHCA1N4115
JANHCA1N4116
JANHCA1N4117
JANHCA1N4118
JANHCB1N4114
JANHCB1N4115
JANHCB1N4116
JANHCB1N4117
JANHCB1N4118
1N4617-1
1N4618-1
1N4619-1
1N4620-1
1N4621-1
JANHCA1N4617
JANHCA1N4618
JANHCA1N4619
JANHCA1N4620
JANHCA1N4621
JANHCB1N4617
JANHCB1N4618
JANHCB1N4619
JANHCB1N4620
JANHCB1N4621
1N4119-1
1N4120-1
1N4121-1
1N4122-1
1N4123-1
JANHCA1N4119
JANHCA1N4120
JANHCA1N4121
JANHCA1N4122
JANHCA1N4123
JANHCB1N4119
JANHCB1N4120
JANHCB1N4121
JANHCB1N4122
JANHCB1N4123
1N4622-1
1N4623-1
1N4624-1
1N4625-1
1N4626-1
JANHCA1N4622
JANHCA1N4623
JANHCA1N4624
JANHCA1N4625
JANHCA1N4626
JANHCB1N4622
JANHCB1N4623
JANHCB1N4624
JANHCB1N4625
JANHCB1N4626
1N4627-1
JANHCA1N4627
JANHCB1N4627
(1) C and D tolerance suffix are applicable to JANC chips.
(2) For JANKC level, replace "JANHC" with "JANKC".
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes no
liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
24
MIL-PRF-19500/435H
Custodians:
Army - CR
Navy - EC
Preparing activity:
DLA - CC
Air Force - 11
NASA – NA
DLA - CC
(Project 5961-2006-070)
Review activities:
Army - AR, AV, MI, SM
Navy - AS, MC
Air Force - 19, 70, 99
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http://assist.daps.dla.mil.
25
相关型号：
JAN1N4130-1/TR
Zener Diode, 68V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN
MICROSEMI
JAN1N4130/TR
Zener Diode, 68V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN
MICROSEMI
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