JAN1N5969CUS [CDI-DIODE]
Zener Diode, 6.2V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | JAN1N5969CUS |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | Zener Diode, 6.2V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2 测试 二极管 |
| 文件： | 总26页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 24 February 2005.
MIL-PRF-19500/356H
24 November 2004
SUPERSEDING
MIL-PRF-19500/356G
5 September 2003
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,
1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,
AND C AND D TOLERANCE SUFFIX DEVICES,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two
levels of product assurance for each unencapsulated device type die.
1.2 Physical dimensions. See figures 1 (axial leaded), 2 (surface mount), and 3 (die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings herein (see 3.10) and as follows:
PT at
TL = +65°C
L = .375 inch
(9.53 mm)
1N4954
PT at
TL = +25°C
L = .375 inch (9.53
mm)
PT at
TEC = +125°C
TJ and TSTG
Barometric pressure
reduced (high altitude
operation)
1N5968,
1N5969,
1N4954US
through
1N4954 through
1N4996
1N4954 through
1N4996
through
1N4996
1N6632 through
1N6637
1N4996US
N5968US,
1N5968,
1N5969,
1N5968,
1N5969,
1N5969US,
1N6632US through
1N6637US
1N6632 through
1N6637
including US suffix
1N6632 through
1N6637
including US suffix
5 W (1)
5 W (2)
5 W (3)
8 mHg
-65°C to +175°C
(1) Derate: See figure 4 herein.
(2) Derate: See figure 5 herein.
(3) Derate: See figures 5, 6 and 7 herein.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at http://assist.daps.dla.mil..
AMSC N/A
FSC 5961.
MIL-PRF-19500/356H
* 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in maximum test ratings
herein (see 3.10) and as follows:
RθJL = 22°C/W (max)
L = .375 inch
RθJL = 30°C/W (max)
L = .375 inch
RθJEC = 7°C/W (max)
RθJEC = 10°C/W (max)
L = 0 inch
L = 0 inch
(9.53 mm)
(9.53 mm)
1N4954 through
1N4996
1N5968, 1N5969,
1N6632 through 1N6637
1N4954US through
1N4996US
1N5968US, 1N5969US,
1N6632US through
1N6637US
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
*
-
* (Copies of these documents are available online at http://assist.daps.dla.mil or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
2
MIL-PRF-19500/356H
Dimensions
Millimeters
Ltr
Inches
Notes
Min
.130
.090
1.00
Max
.300
.145
1.300
.050
.043
Min
3.30
2.29
25.40
Max
BL
BD
LL
LU
LD
7.62
3.68
33.02
1.27
1.09
3
4
.037
0.94
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions BD shall be measured at the largest diameter.
4. Dimension LU defines region of uncontrolled diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology..
* FIGURE 1. Physical dimensions, non-surface mount devices.
3
MIL-PRF-19500/356H
Dimensions
Ltr
Inches
Millimeters
Min
.200
.019
.003
.137
Max
.225
.028
Min
Max
5.72
0.71
BL
ECT
S
5.08
0.48
0.08
3.48
BD
.148
3.76
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 2. Physical dimensions (surface mount devices (US)) (D5B).
4
MIL-PRF-19500/356H
C version
Type
Inches
Millimeters
Min
Max
Min
Max
A
B
C
.062 sq
.052 sq
.007
.064 sq
.056 sq
.012
1.57 sq
1.32 sq
0.18
1.63 sq
1.42 sq
0.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Metallization:
Top
-
AL.
Back -
AU.
(See 3.4.3)
4. Backside is Anode on 1N4954 through 1N4996.
5. Backside is Cathode on 1N5968, 1N5969, and 1N6632 through 1N6637.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 3. Physical dimensions JANHCC and JANKCC (die).
5
MIL-PRF-19500/356H
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500, and as follows.
C suffix ....................................
D suffix ....................................
JANHC ....................................
JANKC.....................................
TEC...........................................
US suffix..................................
±2 percent voltage tolerance.
±1 percent voltage tolerance.
High reliability product assurance level for unencapsulated devices.
Space reliability product assurance level for unencapsulated devices.
Temperature, end cap.
Unleaded or surface mounted devices (square end caps).
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, and 3 herein.
3.4.1 Construction. All devices shall be metallugically bonded, double plug construction, thermally matched, and
noncavity in accordance with the requirements of MIL-PRF-19500. "US" version devices shall be structurally identical
to the axial leaded type except for lead attachment.
3.4.1.1 Diodes with VZ > 6.8 V dc. Diodes with VZ > 6.8 V dc shall utilize category I metallurgical bonds (see
MIL-PRF-19500).
3.4.1.2 Diodes with VZ ≤ 6.8 V dc. Diodes with VZ ≤ 6.8 V dc may utilize category I, II, or category III metallurgical
bonds (see MIL-PRF-19500).
3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.3 JANHC and JANKC metallization. Metallization on JANHC and JANKC is optional and may be specified on the
order.
3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500.
3.5.1 Marking for US suffix devices. For US suffix devices only, all marking (except see 3.8 below) may be omitted
from the body, but shall be retained on the initial container.
3.5.2 Marking for JANHC and JANKC die. Marking of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500.
3.6 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end.
Alternatively, for US suffix devices, a minimum of three contrasting color dots spaced around the periphery on the cathode
end may be used.
3.6.1 Polarity of JANHC and JANKC devices. Polarity marking is not required on JANHC or JANKC devices. All
marking shall be retained on the initial container.
3.7 Selection of tight tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX, JANTXV,
or JANS devices which have successfully completed all applicable screening, and groups A, B, and C testing as ±5
percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2 at the tightened
tolerances. Tighter tolerances for mounting clip temperature shall be maintained for reference purpose to establish
correlation. For C and D tolerance levels, TA = +25°C ±2°C at .375 inch (9.53 mm) from body for leaded devices, or
zero inches for surface mount devices or equivalent.
* 3.8 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I, III, and IV.
6
MIL-PRF-19500/356H
3.9 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.
3.10 Maximum test ratings. Test ratings for the devices specified herein shall be as shown in table IV.
3.11 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspection. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4, and tables I, II, III, and IV).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only.
In case qualification was awarded to a prior revision of the associated specification that did not request the performance
of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot to this revision to maintain qualification.
4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500, and the specification sheet.
7
MIL-PRF-19500/356H
* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-
PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein.
Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurements
JANS level
JANTX and JANTXV levels
Not Required
1a
Required
1b
2
Required
Optional
Required (JANTXV only)
Optional
3a
Required
Required
3b
(1) 3c
Not applicable
Not applicable
Thermal impedance see 4.3.1
Not applicable
Not applicable
Not applicable
Not applicable
Optional
Thermal impedance see 4.3.1
Not applicable
Not applicable
Not applicable
Not applicable
Optional
4
5
6
7a
7b
8
Required
Not required
9
10
11
IR1 and VZ
100 percent
Not applicable
Not applicable
IR1 and VZ
I
R1 and VZ ∆IR1 ≤ ±100 percent of initial
reading or 250 nA dc, whichever is greater.
∆VZ ≤ ±2.5 percent of initial reading.
Required, see 4.3.2
12
Required, see 4.3.2
(2) 13
Required,
Required,
Subgroups 2 of table I herein;
∆IR1 (max) ≤ ± 100 percent of initial
reading or 25 percent of column 12 of
table IV (1N6632 - 1N4964); 250 nA
(1N4965 - 1N4996), whichever is
greater, ∆VZ ≤ ±2.5 percent of initial
reading.
Subgroups 2 and 3 of table I herein; ∆IR1
(max) ≤ ±100 percent of initial reading or
250 nA, whichever is greater; ∆VZ ≤ ±2.5
percent of initial reading.
Scope display see 4.5.7.
14a
(3) 14b
15
Not applicable
Required
Required
Not applicable
Required
Not required
16
Required
Not required
(1) This test shall be performed anytime after screen 3.
(2) Thermal impedance not applicable, if already performed 100 percent.
(3) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after temperature cycling.
8
MIL-PRF-19500/356H
4.3.1 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3101 of MIL-STD-750. The ZθJX limit shall be developed by the supplier using statistical methods and it shall
not exceed the Group A limit herein.
a. IH forward heating current. . . . . . . . . . . . . 5 A minimum to 20 A maximum.
b. tH heating time . . . . . . . . . . . . . . . . . . . . . 10 ms.
c. IM measurement current. . . . . . . . . . . . . . 1 mA minimum, 10 mA maximum.
d.
tMD measurement delay time. . . . . . . . . . . 100 µs maximum.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, the test
current IZ shall be adjusted to produce a junction temperature of +125°C minimum and IZ(min) shall be ≥ 25 percent of
column 8 (IZM) of table IV, see 4.5.6. Use method 3100 to measure TJ. See 4.5.6.
* 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements, the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500, and table I herein. End-point electrical measurements shall be in accordance with the applicable
steps of table III herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table VIa (JANS) and table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500, and
as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable
steps of table III herein.
9
MIL-PRF-19500/356H
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
Method
1056
1051
1037
Conditions
0 to +100°C, 25 cycles, c = 0, n = 22.
-55 to +175°C, 100 cycles.
IZ = 40 percent of column 8 of table IV.
B4
B5
1027
Apply IZ(min) ≥ 40 percent of column 8 of table IV. Temporary leads
may be added for surface mount devices.
Option 1: TA = +100°C (maximum); TJ = +275°C (minimum), t = 96 hours.
n = 22, c = 0.
Option 2: TA = +30°C (maximum); TJ +200°C (minimum); t = 1,000 hours,
n = 45, c = 0.
Option 3: TA = +30°C (maximum); TJ +225°C (minimum); t = 216 hours
n = 45, c = 0.
* 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
B2
Method
1056
Conditions
0 to +100°C, 10 cycles, c = 0, n = 22.
-55 to +175°C, 25 cycles.
1051
B3
1027
The test current IZ shall be adjusted to produce a junction temperature of
+150°C minimum and IZ(min) ≥ 25 percent of column 8 (IZ)of table IV.
Temporary leaded samples from the same lot may be used in lieu
of the US suffix sample life test.
B5
Not applicable.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points)
and delta requirements shall be in accordance with the applicable steps of table III herein.
10
MIL-PRF-19500/356H
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
C2
Method
1056
Conditions
0°C to +100°C, 15 cycles, n = 22 c = 0.
-55°C to +175°C, 25 cycles, n = 22 c = 0.
C2
1051
C2
2036
Tension - test condition A; 8 lbs; t = 15 s ±3 s.
Lead fatigue - Test condition E.
NOTE: Not applicable to US versions.
C5
C6
3101
or
See 4.5.5.
4081
1026
The test current IZ shall be adjusted to produce a junction temperature
of +150°C minimum and IZ(min) ≥ 25 percent of column 8 (IZ)of table IV.
Temporary leaded samples from the same lot may be used in lieu of
the US suffix sample life test.
C7
C8
Not applicable.
4071
IZ = column 5 of table IV, T1 = +25°C ±5°C, T2 = +125°C ±5°C;
symbol is αVZ. The sample plan for subgroup 7 is 22 devices, c = 0.
The maximum limits are column 14 of table IV. (See 4.5.4).
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) shall be as specified in table III.
4.4.4.1 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be as specified in appendix G of
MIL-PRF-19500.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Regulator voltage (VZ). Regulator voltage shall be measured in accordance with method 4022 of
MIL-STD-750, except that the test shall be performed by the pulse method with tp = 0.2 ms to 300 ms. The thermal
equilibrium requirement does not apply. For JANHC and JANKC, this measurement shall be made with the chip
resting on a metal heat sink maintained at +25°C ±3°C. For tight tolerance C and D suffix devices, see 3.7.
4.5.3 Voltage regulation (VZ (reg)). The breakdown voltage shall be measured at IZ = 10 percent of column 8 of
table IV and at IZ = 50 percent of column 8 of table IV. The difference between these voltages shall then be
determined and shall not exceed column 9 of table IV. The voltage measurement at IZ = 10 percent of column 8 of
table IV shall be a pulse measurement in accordance with 4.5.1. The measurement at IZ = 50 percent of column 8 of
table IV shall be made after current has been applied for 30 ±3 seconds. For this time interval, the device shall be
suspended in free air by its leads with mounting clips with inside edge .375 inch (9.53 mm) from the body, and the
point of connection shall be maintained at a temperature of +25°C, +8°C, -2°C. No forced air across the device shall
be permitted. US suffix devices shall be mounted with the end caps maintained at +25°C, +8°C, -2°C. For JANHC
and JANKC, the die shall be stabilized at +25°C and the test shall be performed utilizing pulse conditions. The ∆VZ
measurement may be performed after a shorter time interval following application of the test current if correlation can
be established to the satisfaction of the Government.
11
MIL-PRF-19500/356H
4.5.4 Temperature coefficient of regulator voltage (αVZ ). The device shall be temperature stabilized with current
applied prior to reading regulator voltage at the specified ambient temperature.
* 4.5.5 Thermal resistance. Thermal resistance (not applicable to JANHC and JANKC devices) shall be measured
in accordance with method 3101 or 4081 of MIL-STD-750. Read and record data in accordance with 4.4.1 herein and
shall be included in the qualification report. Forced moving air or draft shall not be permitted across the device during
test. The maximum limit for RθJL or RθJEC under these conditions shall be specified in 1.4. The following conditions
shall apply:
a. IH = 2.0 A dc minimum.
b. tH = thermal equilibrium.
c. IM = 1 mA minimum, 10 mA maximum.
d.
tMD = 100 µs maximum.
The devices shall be allowed to reach thermal equilibrium at current IH before the measurement shall be made.
Lead spacing: LS = .375 inch (9.53 mm) for leaded devices (see figure 8).
LS = 0 inches (end cap mount) for US suffix devices.
4.5.6 Free-air burn-in Deliberate heat sinking, baffles to create an oven, or forced air-cooling is prohibited unless
otherwise approved by the qualifying activity. The use of a current limiting or ballast resistors is permitted provided
that each DUT still sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is maintained
throughout the burn-in period.
* 4.5.7 Scope display evaluation. Scope display evaluation shall be sharp and stable in accordance with method
4023 of MIL-STD-750. Scope display in table I, subgroup 4 shall be performed on a scope. The reverse current (IBR
over the knee shall be 500 µA peak. Scope display may be performed on ATE (automatic test equipment) for
screening only, with the approval of the qualifying activity.
)
4.5.7.1 Scope display option. At the suppliers option, 100 percent scope display evaluation may be discontinued
after three consecutive lots are 100 percent tested with zero failures. Any group A failure shall require 100 percent
scope display to be reinvoked.
4.5.8 Surge current (IZSM). The peak currents specified in column 10 of table III shall be applied in the reverse
direction and shall be superimposed on the current (IZ = column 5 of table III) a total of five surges at 1 minute
intervals. Each individual surge shall be at one-half square wave pulse of 8.3 millisecond duration or an equivalent
sine wave with the same effective (rms) current.
12
MIL-PRF-19500/356H
* TABLE I. Group A inspection.
MIL-STD-750
Inspection 1/
Subgroup 1
Symbol
Limits
Unit
Method
2071
Conditions
Min
Max
Visual and mechanical
inspection
Subgroup 2
Thermal impedance 2/
3101
See 4.3.1
ZθJX
°C/W
1N4954 through
1N4996
1.8
1N5968, 1N5969
1N6632 through
1N6637
3.0
3.0
Forward voltage
Reverse current
4011
4016
IF = 1 A dc
VF
IR1
1.5
V dc
DC method; VR = column 11 of
table IV.
Column
12 of
µA dc
table IV
Regulator voltage
(pulsed) (see 4.5.1 and
4.5.2).
4022
IZ = column 5 of table IV;
0.2 ms ≤ tp ≤ 300 ms.
VZ
Column
3 of
table IV
Column
4 of
table IV
V dc
Subgroup 3
High temperature
operation:
TA = +150°C.
Reverse current
4016
4051
DC method; VR = column 11 of
table IV; pulsed (see 4.5.1).
IR2
Column
14 of
table IV
µA dc
Subgroup 4
Small-signal reverse
Breakdown
impedance
IZ = column 5 of table IV
ZZ
Column
6 of
table IV
ohms
ohms
I
sig = 10 percent of IZ.
Knee impedance
Scope display
4051
4023
IZK =column 15 of table IV
sig = 10 percent of IZK.
ZZK
Column
7 of
table IV
I
See 4.5.7.
See footnotes at end of table.
13
MIL-PRF-19500/356H
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Subgroup 5
Symbol
Limits
Unit
Method
Conditions
Min
Max
Not applicable
Subgroup 6
Surge current
4066
I
ZSM = column 10 of table IV; 5
IZSM
surges, 1 per minute, 1/120 second
duration superimposed on
IZ = column 5 of table IV.
End-point electrical
measurements
See table III, steps 1 and 2.
Subgroup 7
Voltage regulation
(see 4.5.3)
IZ = 10 percent to 50 percent
of column 8 of table IV.
VZ
(reg)
Column
9 of
V dc
table IV
Temperature coefficient
of regulator voltage
(see 4.5.4)
4071
JANS level only IZ = column 5 of
table IV
T1 = +25°C ±5°C;
Column
13 of
table IV
∝VZ
%/°C
T2 = +120°C ≤ T2 ≤ +130°C.
1/ For sampling plan, see MIL-PRF-19500.
2/ Not applicable to JANHC and JANKC devices.
14
MIL-PRF-19500/356H
* TABLE II. Group E inspection (all quality levels except JANHC and JANKC) for qualification
and requalification only.
* Inspection 1/ 2/
MIL-STD-750
Sample plan
Method
1056
Conditions
* Subgroup 1
Thermal shock
22 devices, c = 0
20 cycles, condition D except low temperature shall be
achieved using liquid nitrogen (-195°C). Do a visual for
cracked glass.
-65°C to +175°C, 500 cycles.
Temp cycling
1051
See table III, steps 1, 2, 3, 4, 5, 6, and 7.
Electrical measurements
Subgroup 2
22 devices, c = 0
IZ = 40 percent of column 8 of table IV; TL = +95°C
minimum, L = .375 inch (9.53 mm), ton = toff = 3 minutes
minimum for 10,000 cycles. No heat sink or forced air
cooling on the devices shall be permitted.
Intermittent operation life
1037
Electrical measurements
Subgroup 4
See table III, steps 1, 2, 3, 4, 5, and 6.
N/A
Each supplier shall submit their (typical) max design
thermal impedance curves. In addition, the optimal test
conditions and ZθJX limit shall be provided to the
qualifying activity in the qualification report. See figures
4, 5, 6, and 7.
Thermal impedance
curves
Subgroup 5
22 devices, c = 0
VR = column 11 of table IV, (1N4990 - 1N4996 only)
pressure = 8 mm Hg.
Barometric pressure
(reduced)
1001
Subgroup 6
Not applicable
See footnotes at end of table.
15
MIL-PRF-19500/356H
* TABLE II. Group E inspection (all quality levels except JANHC and JANKC) for qualification
and requalification only - Continued.
* Inspection 1/ 2/
MIL-STD-750
Sample plan
Method
Conditions
Subgroup 8
Not applicable
* Subgroup 9
Resistance to glass
cracking
1057
Step stress to destruction by increased cycles or up to a
maximum of 25 cycles.
n = 45
1/ Unless otherwise specified, for sampling plan, see MIL-PRF-19500.
2/ A separate sample may be pulled for each test.
16
MIL-PRF-19500/356H
* TABLE III. Groups A, B, C, and E electrical measurements. 1/ 2/ 3/ 4/
Step Inspection
MIL-STD-750
Conditions
Symbol
IR1
Limits
Unit
Method
4016
Min
Max
1.
Reverse current
DC method;
VR = column 11
of table IV
Column 12
of table IV
µA dc
2.
3.
Regulator voltage
(see 4.5.2)
4022
4051
IZ = column 5 of
table IV
VZ
ZZ
Column 3
of table IV
Column 4
of table IV
V dc
Small signal
breakdown
impedance
IZ = column 5 of
table IV,
Column 6
of table IV
ohms
I
sig = 10 percent of IZ
1N5968 only
I
SIG = .5 mA ac
4.
5.
6.
Knee impedance
Forward voltage
Forward voltage
4051
4011
4011
IZK = column 15 of
table IV
IF = 1.0 A dc, pulsed
ZZK
VF
Column 7
of table IV
1.5
ohms
V dc
IF = 1.0 A dc, pulsed
See 4.3.1
< 50 mV dc change
from previous
measured value.
°C/W
∆VF
5/
7.
Thermal impedance
3101
ZθJX
1/
The electrical measurements for appendix E, table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7.
b. Subgroup 4, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7.
c. Subgroup 5, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7.
The electrical measurements for appendix E, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are
as follows:
a. Subgroup 2, see table III herein, steps 1, 2, 3, and 7.
b. Subgroup 3, see table III herein, steps 1, 2, 3, and 7.
c. Subgroup 6, see table III herein, steps 1, 2, and 3.
2/
3/
The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7 (JANS) and 1, 2, 3, and 7 for (JAN,
JANTX, and JANTXV).
b. Subgroup 6, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7 (JANS) and steps 1, 2, 3, and 7 (JAN,
JANTX, and JANTXV).
4/
5/
The electrical measurements for appendix E, table IX of MIL-PRF-19500 are as follows:
a. Subgroup 1, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7.
b. Subgroup 2, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7.
Devices which exceed the table I limits, for this test, shall not be accepted.
17
MIL-PRF-19500/356H
* TABLE IV. Test ratings for diodes, types 1N4954 through 1N4996, 1N5968, 1N5969, 1N6632 through 1N6637.
Col 1
Device
type
Col 2 Col 3
VZ VZ
Nom Min
Col 4
VZ
Max
Col 5
IZ test ZZ
Cur-
rent
Col 6
Col 7
ZK
Col 8
IZ Max
dc
Col 9
VZ(reg) IZSM
voltage
Col 10 Col 11 Col 12
Col 13 Col 14 Col 15
VR
IR
IZK
IR
αVZ
Imped- Knee
ance
Rev- Reverse Temper- Test
Reverse
imped- current regula- TA = erse current ature current current dc
1/ 2/
1/ 2/
TA
+25°C
=
ance
TA
+25°C
=
tion
3/
Volt- dc
coeffi-
cient
5/
TA =
+150°C
IR2
+25°C
4/
age
IR1
V
V
V
mA
mA
V
A
V
mA
Ω
Ω
µA
%/°C
µA
1N6632
1N6633
1N6634
1N6635
1N6636
1N6637
3.3
3.14
3.46
3.78
4.09
4.51
4.93
5.35
380
350
320
290
260
240
3
2.5
2
2
2
500
500
500
500
450
400
1,440
1,320
1,220
1,100
1,010
930
.9
20.0
18.7
17.6
16.4
15.3
14.4
1.0
1.0
1.0
1.0
1.0
1.0
300
-.075
-.070
-.060
-.050
±.025
±.030
2,500 5.0
1,000 5.0
3.6
3.9
4.3
4.7
5.1
3.42
3.71
4.09
4.47
4.85
.8
.75
.7
.6
.5
250
175
25
20
5
500
500
500
500
5.0
5.0
5.0
5.0
1.5
1N5968
1N5969
1N4954
1N4955
1N4956
5.6
6.2
6.8
7.5
8.2
5.32
5.89
6.46
7.13
7.79
5.88
6.51
7.14
7.87
8.61
220
220
175
175
150
1
1
1
1.5
1.5
400
1,000
1,000
800
865
765
700
630
580
.4
.5
.7
.7
.7
20
20
29.3
26.4
24
4.28
4.74
5.2
5.7
6.2
5,000
1,000
150
100
50
.040
.040
.05
.06
.06
15,00 5.0
1.0
4,000 1.0
0
750
500
300
200
200
150
150
150
1.0
1.0
600
1N4957
1N4958
1N4959
1N4960
1N4961
9.1
10.0
8.65
9.50
9.55
10.50
150
125
125
100
100
2
2
2.5
2.5
3
400
125
130
140
145
520
475
430
395
365
.7
.8
.8
.8
.9
22
20
19
18
16
6.9
7.6
8.4
9.1
9.9
25
25
10
10
10
.06
.07
.07
.07
.08
1.0
1.0
1.0
1.0
1.0
11.0 10.45 11.55
12.0 11.40 12.60
13.0 12.35 13.65
1N4962
1N4963
1N4964
1N4965
1N4966
15
16
18
20
22
14.25 15.75
15.20 16.80
17.10 18.90
19.00 21.00
20.90 23.10
75
75
65
65
50
3.5
3.5
4.0
4.5
5.0
150
155
160
165
170
315
294
264
237
216
1.0
1.1
1.2
1.5
1.8
12
10
9.0
8.0
7.0
11.4
12.2
13.7
15.2
16.7
5.0
5.0
5.0
2.0
2.0
.08
.08
.085
.085
.085
100
100
100
100
100
1.0
1.0
1.0
1.0
1.0
1N4967
1N4968
1N4969
1N4970
1N4971
24
27
30
33
36
22.8
25.7
28.5
31.4
34.2
25.2
28.3
31.5
34.6
37.8
50
50
40
40
30
5
6
8
10
11
175
180
190
200
220
198
176
158
144
132
2.0
2.0
2.5
2.8
3.0
6.5
6.0
5.5
5.0
4.5
18.2
20.6
22.8
25.1
27.4
2.0
2.0
2.0
2.0
2.0
.09
.09
.09
.095
.095
100
100
100
100
100
1.0
1.0
1.0
1.0
1.0
1N4972
1N4973
1N4974
1N4975
1N4976
39
43
47
51
56
37.1
40.9
44.7
48.5
53.2
40.9
45.1
49.3
53.5
58.8
30
30
25
25
20
14
20
25
27
35
230
240
250
270
320
122
110
100
92
3.0
3.3
3.5
4.0
4.4
4.0
3.5
3.2
3.0
2.8
29.7
32.7
35.8
38.8
42.6
2.0
2.0
2.0
2.0
2.0
.095
.095
.095
.095
.095
100
100
100
100
100
1.0
1.0
1.0
1.0
1.0
84
1N4977
1N4978
1N4979
1N4980
1N4981
62
68
75
82
91
58.9
64.6
71.3
77.9
86.5
65.1
71.4
78.7
86.1
95.5
20
20
20
15
15
42
50
55
80
90
400
500
620
720
760
76
70
63
58
52.5
5.0
5.5
6.0
6.6
7.5
2.5
2.2
2.0
1.8
1.6
47.1
51.7
56
62.2
69.2
2.0
2.0
2.0
2.0
2.0
.100
.100
.100
.100
.100
100
100
100
100
100
1.0
1.0
1.0
1.0
1.0
See footnotes at end of table.
18
MIL-PRF-19500/356H
* TABLE IV. Test ratings for diodes, types 1N4954 through 1N4996, 1N5968, 1N5969, 1N6632 through 1N6637.
Col 1
Device
type
Col 2 Col 3
VZ VZ
Nom Min
Col 4
VZ
Max
Col 5
IZ test ZZ
Cur-
rent
Col 6
Col 7
ZK
Col 8
IZ Max VZ(reg) IZSM
dc voltage
imped- current regula- TA =
Col 9
Col 10 Col 11 Col 12
Col 13
αVZ
Col 14 Col 15
VR IR
Rev- Reverse Temper- Test
IZK
IR
Imped- Knee
ance
Reverse
erse
Volt-
age
current
dc
IR1
ature
coeffi-
cient
6/
current current dc
TA
1/ 2/
1/ 2/
TA
=
ance
TA
=
tion
3/ 4/
=
+25°C
5/
+25°C
+25°C
+150°C
IR2
V
V
V
mA
mA
V
A
V
mA
Ω
Ω
µA
%/°C
µA
100
100
100
100
100
1N4982
1N4983
1N4984
1N4985
1N4986
100
95.0
105
12
12
10
10
8
110
125
170
190
330
800
47.5
43
39.5
36.6
31.6
8.0
9.0
10
1.4
1.2
1.0
.8
76.0
83.6
91.2
98.8
114.0
2.0
2.0
2.0
2.0
2.0
.100
.100
.100
.105
.105
1.0
1.0
1.0
1.0
1.0
110
120
130
150
104.5 115.5
114.0 126.0
123.5 136.5
142.5 157.5
1,000
1,150
1,250
1,500
11
13
.75
1N4987
1N4988
1N4989
1N4990
1N4991
160
180
200
220
240
152
171
190
209
228
168
189
210
231
252
8
5
5
5
5
350
450
500
550
650
1,650
1,750
1,850
2,000
2,050
29.4
26.4
23.6
21.6
19.8
14
16
18
19
22
.70
.60
.50
.50
.40
121.6
136.8
152.0
167.0
182.0
2.0
2.0
2.0
2.0
2.0
.105
.110
.110
.115
.115
100
100
100
100
100
1.0
1.0
1.0
1.0
1.0
1N4992
1N4993
1N4994
1N4995
1N4996
270
300
330
360
390
257
285
314
342
371
283
315
346
378
409
5
4
4
3
3
800
950
1,175 2,200
1,400 2,300
1,800 2,500
2,100
2,150
17.5
15.6
14.4
13.0
12.0
25
28
32
35
40
.35
.30
.25
.22
.20
206
228
251
274
297
2.0
2.0
2.0
2.0
2.0
.120
.120
.120
.120
.120
100
100
100
100
100
1.0
1.0
1.0
1.0
1.0
1/ Unless otherwise specified, ratings apply to all case outlines.
2/ Voltage tolerance devices (examples: 1N6632 is ±5 percent, 1N6632C is ±2 percent, and 1N6632D is ±1 percent
tolerance).
3/ Min/max shown only for ±5 percent tolerance.
4/ See 4.5.3.
5/ See 4.5.8.
6/ See 4.5.4.
19
MIL-PRF-19500/356H
Temperature-power Derating Curve
T lead=25°C 1N4954 through 1N4996
6
5
4
3
2
1
0
25
50
75
100
125
150
175
200
Top (ºC) (Leads 3/8")
DC Operation
Thermal Resistance Junction to Leads 3/8" = 22.0ºC/W
NOTES:
1. Top curve is thermal runaway loci and cannot be used as a derate design curve since it exceeds the maximum
ratings for this part. Operating under this curve using these mounting conditions assures device will not have a
thermal runaway. This is the true inverse of the worst case thermal resistance value extrapolated out to the
thermal runaway point.
2. Derate design curve constrained by the maximum junction temperatures and current rating specified. (See 1.3
herein.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curve chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T
J
J
in their application.
* FIGURE 4. Temperature/power derating curve.
20
MIL-PRF-19500/356H
Temperature-power Derating Curve
T lead=25°C 1N5968, 1N5969, 1N6632 through 1N6637
6
5
4
3
2
1
0
25
DC Operation
Thermal Resistance Junction to Leads 3/8" = 30.0ºC/W
50
75
100
125
150
175
200
Top (ºC) (Leads 3/8")
NOTES:
1. Top curve is thermal runaway loci and cannot be used as a derate design curve since it exceeds the maximum
ratings for this part. Operating under this curve using these mounting conditions assures device will not have a
thermal runaway. This is the true inverse of the worst case thermal resistance value extrapolated out to the
thermal runaway point.
2. Derate design curve constrained by the maximum junction temperatures and current rating specified. (See 1.3
herein.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curve chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T
J
J
in their application.
* FIGURE 5. Temperature/power derating curve.
21
MIL-PRF-19500/356H
Temperature-power Derating Curve
T End Cap=25°C 1N4954US through 1N4996US
6
5
4
3
2
1
0
25
50
75
100
125
150
175
200
Top (ºC) (End Cap)
DC Operation
Thermal Resistance Junction to End Cap = 7.0ºC/W
NOTES:
1. Top curve is thermal runaway loci and cannot be used as a derate design curve since it exceeds the maximum
ratings for this part. Operating under this curve using these mounting conditions assures device will not have a
thermal runaway. This is the true inverse of the worst case thermal resistance value extrapolated out to the
thermal runaway point.
2. Derate design curve constrained by the maximum junction temperatures and current rating specified. (See 1.3
herein.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curve chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T
J
J
in their application.
* FIGURE 6. Temperature/power derating curve.
22
MIL-PRF-19500/356H
Temperature-power Derating Curve
T End Cap=25°C 1N5968, 1N5969, 1N6632 through 1N6637
6
5
4
3
2
1
0
25
DC Operation
Thermal Resistance Junction to End Cap = 10.0ºC/W
50
75
100
125
150
175
200
Top (ºC) (End Cap)
NOTES:
1. Top curve is thermal runaway loci and cannot be used as a derate design curve since it exceeds the maximum
ratings for this part. Operating under this curve using these mounting conditions assures device will not have a
thermal runaway. This is the true inverse of the worst case thermal resistance value extrapolated out to the
thermal runaway point.
2. Derate design curve constrained by the maximum junction temperatures and current rating specified. (See 1.3
herein.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curve chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T
J
J
in their application.
* FIGURE 7. Temperature/power derating curve.
23
MIL-PRF-19500/356H
* FIGURE 8. Mounting arrangement.
24
MIL-PRF-19500/356H
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
*
order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel,
these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
*
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.2).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail
vqe.chief@dla.mil.
25
MIL-PRF-19500/356H
6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example: JANHCA1N4954) will be identified on the QML.
JANHC and JANKC ordering information
Manufacturer
PIN
43611
1N4954 through 1N4996
1N4954 through 1N4996
1N5968 and 1N5969
JANHCA1N4954 through JANHCA1N4996
JANKCC1N4954 through JANHCC1N4996
JANHCC1N5968 and JANHCC1N5969
JANKCC1N5968 and JANKCC1N5969
JANHCC1N6632 through JANHCC1N6637
JANKCC1N6632 through JANKCC1N6637
1N5968 and 1N5969
1N6632 through 1N6637
1N6632 through 1N6637
6.5 Substitutability of 2 percent and 1 percent tolerance devices. Devices of tighter tolerance are a direct one way
substitute for the looser tolerance devices (example: JANTX1N4954D substitutes for a JANTX1N4954).
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes no
liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2875)
Review activities:
Army - AR, AV, MI, SM
Navy - AS
Air Force - 19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http://assist.daps.dla.mil.
26
相关型号：
JAN1N5969D
Zener Diode, 6.2V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
CDI-DIODE
JAN1N5969DUS
Zener Diode, 6.2V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
CDI-DIODE
JAN1N6036A
Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明