JANKCA1N829 [CDI-DIODE]
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3;
| 型号： | JANKCA1N829 |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3 二极管 |
| 文件： | 总19页 (文件大小：666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 October 2004.
INCH-POUND
MIL-PRF-19500/159M
1 July 2004
SUPERSEDING
MIL-PRF-19500/159L
18 September 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,
TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1,
1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV,
JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H;
JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 6.2 volts 5 percent, silicon, voltage-reference,
±
temperature compensated diodes. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.
Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-7 and DO-35), figure 2 (similar to DO-213AA), figure 3 (JANHCA
and JANKCA), figure 4 (JANHCB and JANKCB) and figure 5 (JANHCC and JANKCC).
1.3 Maximum ratings. (Unless otherwise specified, T = +25 C).
°
A
Power derating
PT
(1)
TSTG and T
IZM
(1)
J
above T = +25 C
°
A
mW
500
C
mA dc
70
mW/ C
°
°
-55 to +175
3.33
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper IZ = 7.5 mA dc.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/159M
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T = +25 C.
°
A
Type (1)
V
ZZ
VZ
IR
∆
Z
(voltage
IZ = 7.5 mA dc
temperature
stability) (1)
IZ = 7.5 mA dc
VR = 3.0 V
Min
Max
mV dc
ohms
Volts
Volts
A
µ
1N821-1, 1N821UR-1
1N823-1, 1N823UR-1
1N825-1, 1N825UR-1
1N827-1, 1N827UR-1
1N829-1, 1N829UR-1
96
48
19
9
15
15
15
15
15
5.89
5.89
5.89
5.89
5.89
6.51
6.51
6.51
6.51
6.51
2.0
2.0
2.0
2.0
2.0
5
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper IZ of 7.5mA dc.
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
*
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
-
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or
http://www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/159M
Dimensions
Inches Millimeters
Symbol
Notes
Min
Max
.107
Min
1.52
3.05
0.46
25.40
Max
2.72
7.62
0.58
38.10
1.27
BD
BL
LD
LL
.060
.120
3
3
.300
.018
.023
1.000
1.500
0.050
LL1
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any shall be included within
this cylinder but shall not be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than
heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
φ
FIGURE 1. Physical dimensions, 1N821-1,through 1N829-1 (similar to DO-7 and DO-35).
3
MIL-PRF-19500/159M
Dimensions
Millimeters
Symbol
Inches
Min
Max
.067
.146
.022
Min
1.60
3.30
0.41
Max
1.70
3.71
0.56
BD
BL
.063
.130
.016
ECT
S
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
φ
FIGURE 2. Physical dimensions, 1N821UR-1, through 1N829UR-1 (DO-213AA).
4
MIL-PRF-19500/159M
Dimensions
Inches Millimeters
Symbol
Min
Max
Min
Max
A
B
C
D
E
F
.0280
.0080
.0104
.0019
.0054
.0020
.0030
.0209
.0080
.0059
.0320
.0100
.0106
.0021
.0056
.0040
.0050
.0211
.0100
.0061
0.711
0.203
0.264
0.048
0.137
0.050
0.076
0.531
0.203
0.150
0.813
0.254
0.269
0.053
0.142
0.102
0.127
0.536
0.254
0.155
H
K
L
Backside must be electrically isolated to ensure
Proper performance.
N
Design data
Metallization:
Top: 1 (Cathode) . . . . . . Al
2 (Anode) . . . . . . . Al
Circuit layout data:
For zener operation, cathode must be
operated positive with respect anode.
Test pad is for wire bond evaluation only. No
electrical contact is made with test pad.
3 (Test pad) . . . . . . Al
Back: Metallization. . . . . Au
Al thickness . . . . . . . 25,000Å minimum
Gold thickness . . . . . 4,000Å minimum
Chip thickness . . . . . .010 inch (0.25 mm) .002 inch (0.05 mm).
±
NOTES:
1. Dimensions are in inches unless otherwise indicated.
2. Millimeters are given for general information only.
* FIGURE 3. JANHC and JANKC (A-version) die dimensions.
5
MIL-PRF-19500/159M
Dimensions
Inches Millimeters
Symbol
Min
Max
.037
.029
Min
0.61
0.36
Max
0.94
0.74
A
B
.024
.014
Design data
Metallization:
Circuit layout data:
Top: (Anode) . . . Al
For zener operation, cathode must be
operated positive with respect to anode.
Back . . . . . . . . . . . Au
Al thickness
. . . . . . . 40,000Å minimum
Gold thickness . . . . . . 5,000Å minimum
Chip thickness . . . . . . .010 inch (0.25 mm) .002 inch (0.05 mm).
±
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information.
* FIGURE 4. JANHC and JANKC (B-version) die dimensions.
6
MIL-PRF-19500/159M
Dimensions
Millimeters
Min
Symbol
Inches
Min
Max
Max
.165
.200
.165
.165
.419
.737
A
B
C
D
E
F
.0035
.0050
.0050
.0050
.0150
.0260
.0065
.0080
.0065
.0065
.0165
.0290
.088
.127
.127
.127
.381
.660
Design data
Metallization:
Circuit layout data:
Top:
2(Anode) . . . . . Al
1(Cathode) Al
. . . . . . . . . . . Au
For zener operation, cathode must be
operated positive with respect anode.
Back
Al thickness . . . . . . . . 40,000Å minimum
Gold thickness . . . . . 5,000Å minimum
Chip thickness . . . . . . .010 inch (0.25 mm) ± .002 inch (0.05 mm).
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information.
3. Backside must be electrically isolated.
* FIGURE 5. JANHC and JANKC (C-version) die dimensions.
7
MIL-PRF-19500/159M
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.
MIL-
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Diode construction. These devices shall be constructed in a manner and using material which enable the
diodes to meet the applicable requirements of MIL-PRF-19500 and this document.
3.5.1 Dash-one construction. Shall be as specified in MIL-PRF-19500.
3.5.2 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with
MIL-PRF-19500.
3.5.3 JANHC and JANKC construction. JANHC and JANKC construction may differ in die size and bonding pad
layout provided the manufacturing technology is identical (example: diffused junction, alloy junction).
3.6 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6.1 Marking of "UR" version devices. For "UR" version devices only, all marking (except polarity) may be omitted
from the body, but shall be retained on the initial container.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4 VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.1.1 Sampling inspection. Sampling inspection shall be in accordance with MIL-PRF-19500 and as specified
herein, except that lot accumulation period shall be 3 months in lieu of 6 weeks.
8
MIL-PRF-19500/159M
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and 4.4.5
herein.
4.2.2 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with
MIL-PRF-19500.
4.2.2.1 Radiation hardened devices. See MIL-PRF-19500 and 4.4.4 herein.
* 4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, appendix E and as specified herein. Specified electrical measurements shall be made in
accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see appendix
E, table IV of
JANS level
JANTXV and JANTX level
MIL-PRF-19500)
1a
1b
2
3a
3b
3c
4
5
6
Required
Not required
Required (JANTXV only)
Not required
Required
Not required
Required
Required
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Optional
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Optional
7a
7b
8
Required
Not required
9
Required
Not applicable
Not applicable
Required VZ, ZZ
10
Required
11
Required VZ, ZZ
12
13
Required see 4.3.1
Required see 4.3.1
Required
Required
Subgroups 2 and 3 of table I herein;
Z
Subgroups 2 of table I herein;
Z
±15 percent
≤
∆
≤
∆
Z
Z
±15 percent of initial reading TA = +25°C ±2°C, of initial reading TA = +25°C ±2°C,
±0.004 V dc from initial value for 1N821- ±0.004 V dc from initial value for1N821-1,
V
∆
V
∆ ≤
Z
≤
Z
1, 1N821UR-1, 1N823-1, 1N823UR-1, 1N825-
1N821UR-1, 1N823-1,1N823UR-1, 1N825-1
1 1N825UR-1
1N825UR-1
V
∆
±0.003 V dc from initial value for 1N827-
V
∆
±0.003 V dc from initial value for 1N827-1,
≤
≤
Z
Z
1, 1N827UR-1, 1N829-1, 1N829UR-1
1N827UR-1, 1N829-1, 1N829UR-1
14a
14b
15
Not applicable
Not Applicable
Required (1) (2)
Required
Required
Required (1) (2)
Not Required
16
Not required
(1) See MIL-PRF-19500.
(2) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after temperature cycling.
9
MIL-PRF-19500/159M
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: I = 7.5 mA dc, .75 mA dc,
±
Z
T = +150 C, +5 C, -0 C.
°
°
°
A
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, JANTXV, ) of MIL-PRF-19500. Electrical
measurements (end-points) shall be in accordance with the applicable steps of table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. For purposes of JANS inspection, a single
device type shall be defined as devices from a single wafer lot (for each die type used in the construction). The
conformance inspection sample shall be selected from the part category with the lowest V rating in the inspection
∆
Z
lot.
Subgroup
B1
Method
2066
2026
1022
1056
4066
1071
2075
1037
Conditions
As specified.
B2
As specified.
B2
As specified.
B3
Test Condition A, 25 cycles.
Not applicable.
Test condition E.
As specified.
B3
B3
B3
B4
IZ = 35 mA dc at T = room ambient; ton = toff = 30 seconds minimum for 4,000
cycles. Forced airAcooling allowed during off cycle.
B5
B6
1027
IZM = 70 mA dc for 96 hours. TA
minimum.
+75 C, adjust T to achieve T = +200 C
A
J
=
°
°
Not applicable.
10
MIL-PRF-19500/159M
* 4.4.2.2 Group B inspection, appendix E, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
B1
Method
2026
1022
1056
4066
1071
1027
2075
Conditions
As specified.
B1
As specified.
B2
Test Condition A, 25 cycles.
Not applicable.
Test condition E.
See 4.3.1.
B2
B2
B3
B4
As specified.
B5
Not applicable.
As specified.
B6
1032
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) requirements shall be in
accordance with the applicable steps of table I, subgroup 2 herein.
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
C1
Method
2066
Conditions
As specified.
C2
1056
Test Condition A, 25 cycles.
C2
2036
Lead tension: Test condition A; 4 pounds weight, t = 15 3 seconds. Lead fatigue:
±
Test condition E (lead tension and fatigue tests are not applicable to surface
mount “UR” version device).
C2
C2
C3
C4
C5
C6
1071
1021
Test condition E.
Omit initial conditioning.
Not applicable.
1041
1026
As specified.
Not applicable.
I = 7.5 mA dc, T = +100 C minimum.(see 4.5.2).
°
Z
A
C7
Not applicable.
11
MIL-PRF-19500/159M
4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table VIII of MIL-PRF-19500
and table II herein. Submitted lots for group D sample inspection must be constructed using one homogeneous wafer
lot for the zener and one wafer lot for the compensating die (die), as also described in the submitted DSCC Design
and Construction form 36D (see table II herein).
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup tests in table IX of MIL-PRF-19500 and table III herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Voltage-temperature stability. The breakdown voltage of each diode type shall be measured and recorded at
each of the specified temperatures. The lowest measured voltage shall be subtracted from the highest measured
voltage for each diode. The difference value obtained shall not exceed the specified V per diode type.
∆
Z
4.5.2 Reference voltage time stability. The breakdown voltage shall be measured prior to life testing at 340 hours,
and at the conclusion of the life test. The 340-hour reading shall be compared with the 0-hour reading and the 1,000-
hour reading compared with the 340-hour reading. The change in breakdown voltage shall not exceed the limits
specified. The test temperature for breakdown voltage shall be the same as the specified ambient life test
temperature (see table IV herein).
4.5.3 Reference voltage. The test current shall be applied until thermal equilibrium is attained (15 seconds
minimum) prior to reading the reference voltage. For this test, the diode shall be suspended by its leads with
mounting clips whose inside edge is located between .375 inch (9.53 mm) and .500 inch (12.70 mm) inch from the
body and the mounting clips shall be maintained at the specified temperature. This measurement may be performed
after a shorter time following application of the test current than that which provides thermal equilibrium if correlation
to stabilized readings can be established to the satisfaction of the Government.
12
MIL-PRF-19500/159M
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limits
Max
Unit
Method
2071
Min
Visual and mechanical
examination
Subgroup 2
Reference voltage
(see 4.5.3)
4022
4051
I = 7.5 0.01 mA dc
VZ
ZZ
5.89
6.51
15
V dc
±
Z
Small-signal breakdown
impedance
I = 7.5 0.01 mA dc,
ohms
±
IZsig = 0.75 mA ac
Subgroup 3
Voltage temperature
stability (see 4.5.1 and
4.5.3)
I = 7.5 0.01 mA dc,
V
Z
±
°
∆
Z
T = -55 C, 0 C. +25 C,
°
°
A
+75 C, +100 C 2 C,
°
°
± °
IZ = (see 1.4)
1N821-1,
96
48
19
9
mV dc
mV dc
mV dc
mV dc
mV dc
1N821UR-1
1N823-1,
1N823UR-1
1N825-1,
1N825UR-1
1N827-1,
1N827UR-1
1N829-1,
5
1N829UR-1
Subgroups 4, 5, and 6
Not applicable
Subgroup 7
Reverse current
leakage
4016
DC method; VR = 3.0 V dc
IR
2.0
A
µ
1/ For sampling plan, see MIL-PRF-19500.
13
MIL-PRF-19500/159M
* TABLE II. Group D inspection.
Inspection
MIL-STD-750
Symbol
JANTXV and
JANS
JANTXV and
JANS
V
Unit
∆
Z
θ
Pre-post
Pre-irradiation
limits
Post-irradiation
limits
1/ 2/
Method
Conditions
M, D, L, R, F,
G, and H
M, D, L, R, F,
G, and H
IRRAD change
Min
Max
Min
Max
Min
Max
Subgroup 1
Not
applicable
Subgroup 2
T
= +25 C
C
°
Steady-state
total dose
1019
4022
4051
4016
4022
IZ = 7.5 mA
Condition A
irradiation
Reference
voltage
IZ = 7.5
VZ
ZZ
IR
5.89
6.51
15
5.89
6.51
15
V dc
0.01 mA dc
±
(see 4.5.3)
Small-signal
breakdown
Impedance
IZ = 7.5 mA dc
Istg = 0.75 ac
ohms
Reverse
current
DC method;
2.0
2.0
A
µ
VR = 3.0 V dc
leakage
Voltage
IZ = 7.5
V
Z
∆
stability
0.01 mA dc
±
(see 4.5.3)
T = 25 C
°
A
2 C
°
±
1N821-1,
3.0
mV
mV
mV
mV
mV
±
1N821UR-1
1N823-1,
3.0
±
1N823UR-1
1N825-1,
2.0
±
1N825UR-1
1N827-1,
1.5
±
1N827UR-1
1N829-1,
1.0
±
1N829UR-1
1/ For sampling plan, see MIL-PRF-19500.
2/ Group D qualification may be performed any time prior to lot formation.
14
MIL-PRF-19500/159M
* TABLE III. Group E inspection qualification and requalification (all product assurance levels).
Inspection
MIL-STD-750
Conditions
Qualification conformance
inspection (sampling plan)
Method
1051
Subgroup 1
Temperature cycling
Electrical measurements
Subgroup 2
22 devices, c = 0
500 cycles.
See table I, subgroup 2 herein.
22 devices, c = 0
3 devices, c = 0
Steady state operation life
1038
2101
Condition B, 1,000 hours. (see 4.3.1).
See table I, subgroup 2 herein.
Electrical measurements
Subgroup 3
Decap analysis
Cross section and scribe and break.
Separate samples shall be used for each test.
Subgroups 4, 5, 6, and 7
Not applicable
Subgroup 8
Step stress to destruction by increasing cycles
or up to a maximum of 25 cycles.
Resistance to glass
cracking
1057
45 devices
15
MIL-PRF-19500/159M
TABLE IV. Reference voltage time stability.
Inspection
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
Min
Max
Reference-voltage time
stability
T = +100 C 2 C,
V
Z
°
±
°
∆
A
(see 4.5.2 and 4.5.3),
I = 7.5 0.01 mA dc
±
Z
1N821-1, 1N821UR-1
1N823-1, 1N823UR-1
1N825-1, 1N825UR-1
1N827-1, 1N827UR-1
1N829-1, 1N829UR-1
(0 to 340 hours)
7
7
7
6
5
mV dc
mV dc
mV dc
mV dc
mV dc
1N821-1, 1N821UR-1
1N823-1, 1N823UR-1
1N825-1, 1N825UR-1
1N827-1, 1N827UR-1
1N829-1, 1N829UR-1
(340 to 1,000 hours)
4
4
4
3
3
mV dc
mV dc
mV dc
mV dc
mV dc
16
MIL-PRF-19500/159M
5. PACKAGING
* 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
* 6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail
vqe.chief@dla.mil.
17
MIL-PRF-19500/159M
6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCAM1N821) will be identified on the QML.
JANC ordering information
PIN
Manufacturer
43611
43611
Radiation
12954
12954
12954
Radiation
designators
Radiation
designators
Designators
M, D, L, R, F, G, H
M, D, L, R, F, G, H M, D, L, R, F, G, H
1N821
1N823
1N825
1N827
1N829
JANHCA1N821
JANKCA1N821
JANHCA1N821 JANHCB1N821 JANHCB1N821
JANKCA1N821 JANKCB1N821 JANKCB1N821
JANHCC1N821
JANKCC1N821
JANHCA1N823
JANKCA1N823
JANHCA1N823 JANHCB1N823 JANHCB1N823
JANKCA1N823 JANKCB1N823 JANKCB1N823
JANHCC1N823
JANKCC1N823
JANHCA1N825
JANKCA1N825
JANHCA1N825 JANHCB1N825 JANHCB1N825
JANKCA1N825 JANKCB1N825 JANKCB1N825
JANHCC1N825
JANKCC1N825
JANHCA1N827
JANKCA1N827
JANHCA1N827 JANHCB1N827 JANHCB1N827
JANKCA1N827 JANKCB1N827 JANKCB1N827
JANHCC1N827
JANKCC1N827
JANHCA1N829
JANKCA1N829
JANHCA1N829 JANHCB1N829 JANHCB1N829
JANKCA1N829 JANKCB1N829 JANKCB1N829
JANHCC1N829
JANKCC1N829
6.5 Substitution of radiation hardened devices. See MIL-PRF-19500.
6.6 Substitution of V devices. Device types within this series with higher type numbers (lower V ) are a direct
∆
∆
Z
Z
one way substitution for lower type numbers (higher V ).
∆
Z
6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes no
liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
18
MIL-PRF-19500/159M
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2886)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http://www.dodssp.daps.mil.
19
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