JANTX1N4128DUR-1中文资料_数据手册_规格书

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 18 August 2007.

INCH-POUND

MIL-PRF-19500/435H

18 May 2007

SUPERSEDING

MIL-PRF-19500/435G

10 November 2005

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES

1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,

1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage

regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are

provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for

each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.

* 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).

* 1.3 Maximum ratings Unless otherwise specified T_C= 25°C. Maximum ratings are as shown in maximum test

ratings herein (see 3.8), and as follows:

a.

P_TL= 500 mW (DO-35) at T_L= 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at

L = .375 inch (9.53 mm). (Derate I_Zto 0.0 mA dc at +175°C).

b.

c.

P

_TEC= 500 mW (DO-213AA) at T_EC= 125°C. (Derate to 0 at 175°C). -65°C ≤ T_J≤ +175°C; -65°C ≤ T_STG

≤ +175°C.

P

= 400 mW, T = +55°C. (Derate to 0 at +55°C).

A

TPCB

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil.

Since contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

MIL-PRF-19500/435H

* 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in primary test ratings herein

(see 3.8) and as follows:

a. 1.8 V dc ≤ V_z≤ 100 V dc.

b. R_θJL= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-35) mounting conditions (see figure 4).

c. Noise density see 4.5.5 and figure 5.

d. R_θJEC= 100°C/W (maximum) junction to end-caps (DO-213AA).

e. See figures 6, 7, and 8 for derating curves. T_A= +75°C for both axial and MELF (US) on printed circuit board

(PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .05 inch (1.27 mm) x

.087 inch (2.21 mm); pads (Axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (0.762 mm) x 1 inch (25.4

mm) long, axial lead length L ≤ .125 inch (≤ 3.18 mm); R

with a defined thermal resistance condition

θJA

included is measured at I = 1 A.

O

f.

R

θJA

= 300°C/W. Junction to ambient including PCB see note 1.4.e.

g. For derating see figure 7.

h. For thermal impedance curves, see figures 9, 10, and 11.

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

-

Semiconductor Devices, General Specification for.

-

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or

http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

2

MIL-PRF-19500/435H

Ltr

Dimensions

Notes

Inches

Millimeters

Min

.055

.120

.018

Max

.107

.300

.022

1.500

.050

Max

2.72

7.62

0.56

38.10

1.27

BD

BL

LD

LL

1.40

3.05

3

0.46

1.000

25.40

4

LL₁

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for general information only.

3. Package contour optional within BD and length BL. Heat slugs, if any, shall be

included within this cylinder but shall not be subject to minimum limit of BD. The BL

dimension shall include the entire body including slugs.

4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities

other than heat slugs.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 1. Semiconductor device, diode, types 1N4099-1 through 1N4135-1

and 1N4614-1 through 1N4627-1 (DO-35).

3

MIL-PRF-19500/435H

Symbol

Dimensions

Inches

Millimeters

Min

Max

Min

Max

BD

ECT

BL

.063

.016

.130

.067

.022

.146

1.60

0.41

3.30

1.70

0.56

3.71

S

.001 min

0.03 min

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions 1N4099UR-1 through 1N4135UR-1 and

1N4614UR-1 through 1N4627UR-1 (DO-213AA).

4

MIL-PRF-19500/435H

JANHCA and JANKCA die

dimensions

JANHCB and JANKCB die

dimensions

Ltr

Inches

Millimeters

Ltr

Inches

Min

Millimeters

Min

.021

.013

Max

.025

.017

Min

0.53

0.33

Max

0.63

0.43

Max

.028

.021

Min

0.61

0.43

Max

0.71

0.53

A

B

A

B

.024

.017

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for general information only.

3. The JANHCA and JANKCA die thickness is .010 (0.25 mm) ± .002 inches (0.05 mm).

Anode metallization:

Al, thickness = 25,000 Å minimum; cathode metallization: Au, thickness = 4000 Å

minimum.

4. The JANHCB and JANKCB die thickness is .010 (0.25 mm) ± .002 inches (0.05 mm).

Anode metallization:

Al, thickness = 40,000 Å minimum; cathode metallization: Au, thickness = 5,000 Å

minimum.

5. Circuit layout data: For zener operation, cathode must be operated positive with respect

to anode.

6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 3. Physical dimensions JANHC and JANKC die.

5

MIL-PRF-19500/435H

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

C

D

....................................................2 percent voltage tolerance.

....................................................1 percent voltage tolerance.

TEC ...................................................Temperature of end-cap.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1, 2, and 3 herein.

3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where

a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. All devices shall be in accordance with the requirements of MIL-PRF-19500.

3.4.3 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction or

straight through construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500).

3.4.4 JANS construction. Construction shall be dash one or straight through construction, category I or II

metallurgical bond in accordance with MIL-PRF-19500.

* 3.4.5 Package outline. This specification contains one standard package; DO-35. Any user of this specification

that has a specific package outline requirement shall specify their preference in the acquisition order. If package style

is not specified, the manufacturer may supply either package. Surface mount devices are in a

DO-213AA package.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500 and as specified herein.

3.5.1 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately,

for surface mount (UR) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the

cathode end may be used. No color coding will be permitted.

* 3.5.2 Marking of UR suffix version devices. For UR suffix (surface mount) devices only, all marking (except

polarity) may be omitted from the body of the device, but shall be retained on the initial container.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6.1 Selection of tight tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX,

JANTXV, or JANS devices which have successfully completed all applicable screening, table I, and groups B and C

testing as 5 percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2 at the

tightened tolerances. The P_TLor P_TECfor C and D suffix devices shall be maintained at 30°C ±2°C for V correlation

Z

on tight tolerances.

6

MIL-PRF-19500/435H

* 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2, 4.4.3,

table I, II, and III.

3.8 Maximum and primary electrical characteristics test requirements. Maximum test ratings for voltage regulator

diodes are specified in table III herein.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4, tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case

qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II

tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first

inspection lot of this revision to maintain qualification.

4.2.2 JANHC and JANKC devices. JANHC and JANKC devices shall be qualified in accordance with

MIL-PRF-19500.

4.2.3 Construction verification. Cross sectional photos from three devices shall be submitted in the qualification

report.

7

MIL-PRF-19500/435H

* 4.3 Screening (JAN, JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with appendix E,

table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance

with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

appendix E, table

E-IV of

Measurement

MIL-PRF-19500)

JANS level

JANTXV and JANTX level

Not required

1a

1b

2

Required

Not required

Required

Required (JANTXV only)

Not required

Required

3a

3b

(1) 3c

4, 5, and 6

Not applicable

Required (see 4.3.2)

Not applicable

Required

Required on Nom V_Z> 10 V, I_R1and V_Z

Required on Nom V_Z> 10 V

Required

Not applicable

Required (see 4.3.2)

Not applicable

Not required

Not applicable

Required

8

9

10

11

I

_R1and V_Z

∆I_R1≤ 100 percent of initial reading or 10

nA whichever is greater. ∆V_Z≤ 2 percent

of initial reading.

12

Required, see 4.3.3

Required,

t = 240 hours.

See 4.3.3, t = 48 hours

(2) 13

Required

Subgroup 2 of table I herein; ∆I_R1≤ 100

percent of initial reading or 10 nA

whichever is greater; ∆V_Z≤ 2 percent of

initial reading.

Required

Subgroup 2 of table I herein; ∆I_R1≤ 100

percent of initial reading or 10 nA whichever

is greater; ∆V_Z≤ 2 percent of initial reading.

Not required

15

16

Not required

(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

(2) PDA = 5 percent for screen 13, applies to ∆I_R1,∆V_Z,, I_R1and V_Z(JANS only).

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix

G of MIL-PRF-19500.

4.3.1.1 JAN product. JAN product will have temperature cycling and thermal impedance testing performed in

accordance with MIL-PRF-19500, JANTX level screening requirements.

8

MIL-PRF-19500/435H

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 or 4081 as applicable of MIL-STD-750 using the guidelines in that method for determining I , I , t , t (and

M

H H MD

V

C

where appropriate). See table II, subgroup 4 herein. Measurement delay time (t_MD) = 70 us max.

4.3.3 Free air power burn-in conditions. Power burn-in conditions are as follows (see 4.5.4): I

= I_Z(PCB). T

A

Z(min)

= 75°C maximum. Test conditions shall be in accordance with method 1038 of MIL-STD-750, condition B. Adjust I

Z

or T to achieve the required T . T = 125°C minimum. With approval of the qualifying activity and preparing activity,

A

J

alternate burn-in criteria (hours, bias conditions, T , mounting conditions) may be used for JANTX and JANTXV

J

quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing site’s burn-in data

and performance history will be essential criteria for burn-in modification approval.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein.

* 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of

MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.

* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF19500

and herein. Electrical measurements (end-points) requirements shall be in accordance with table I, subgroup 2

herein.

* 4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

B3

Method

2101

Condition

Decap analysis scribe and break only.

2,000 cycles

B4

1037

B5

B6

1027

I_ZM= column 10 of table III minimum for 1,000 hours; adjust I_Zor T_Ato

achieve T_J= +175°C minimum. Marking legibility requirements shall not

apply.

3101

R_θJEC= 100°C/W (max) at zero lead length (DO-213AA),

or

+25°C ≤ T_R≤ +35°C (see 4.5.4). R_θJL= 250°C/W (max)

4081

at L = .375 inch (9.53 mm), (DO-35).

9

MIL-PRF-19500/435H

* 4.4.2.2 Group B inspection, appendix E, table E-VIb (JAN, JANTX, JANTXV) of MIL-PRF-19500.

Subgroup

B2

Method

1056

Condition

0°C to +100°C, 10 cycles.

-55°C to +175°C, 25 cycles.

B2

1051

B3

1027

2101

I_ZM= column 10 of table III herein minimum. Adjust I_Zor T_Ato ensure a

T_J= +150°C (min).

B4

B5

Decap analysis scribe and break only.

Not applicable.

B6

1032

T_A= +175°C.

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points)

requirements shall be in accordance with table I, subgroup 2 herein.

Subgroup

C2

Method

1056

Condition

0°C to +100°C, 10 cycles.

C2

2036

Tension: condition A; 4 pounds; t = 15 seconds (not applicable to "UR"

suffix devices). Lead fatigue: Condition E, (not applicable to "UR" suffix

devices).

C2

C3

1071

Test condition E.

Not applicable.

C5

C6

4081

1027

See 4.3.2, R_θJLand R_θJEC.

I_ZM= column 10 of table III minimum. Adjust I_Zor T_Ato ensure a

T_J= +150°C (min).

C7

C8

Not applicable.

4071

I_Z= 250 µA dc, T_A= +25°C ± 5°C, T₂= +125°C, αV_Z= column 8 of

table III, sampling plan = 22 devices, c = 0.

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and in table II herein. Electrical measurements (end-

points) requirements shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:

4.5.1 Surge current (I_ZSM). The peak currents shown in column 5 of table III shall be applied in the reverse

direction and these shall be superimposed on the current (I_Z= 250 µA dc) a total of five surges at 1 minute intervals.

Each individual surge shall be one-half square-wave-pulse of 1/120 second duration or an equivalent one-half

sinewave with the same effective rms current.

10

MIL-PRF-19500/435H

4.5.2 Regulator voltage measurements. The test current shall be applied until thermal equilibrium is attained (20

±2 seconds maximum) prior to reading the breakdown voltage. For this test, the diode shall be suspended by its

leads with mounting clips whose inside edge is located at .375 inch (9.53 mm) from the body and the mounting clips

shall be maintained at a temperature of +25°C +8°C, -2°C. This measurement may be performed after a shorter time

following application of the test current than that which provides thermal equilibrium if correlation to stabilized

readings can be established to the satisfaction of the qualifying activity. The breakdown voltage on JANHC and

JANKC shall be read with a pulse measurement of 10 ms (max).

4.5.3 Temperature coefficient of regulator voltage (αV_Z). The device shall be temperature stabilized with current

applied prior to reading regulator voltage at the specified ambient temperature as specified in table I herein, subgroup

7.

4.5.4 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that each

DUT still sees the full P_t(minimum) and that the minimum applied voltage, where applicable, is maintained through-

out the burn-in period. Use method 3100 of MIL-STD-750 to measure T_J.

* 4.5.5 Noise density. Noise density shall be measured using a noise density test circuit as shown on figure 5.

Place a low-noise resistor, equivalent in value to the dynamic impedance of the diode under test, in the test clips and

adjust test current (I_ZT) and measure output-noise voltage. Remove resistor, insert diode under test in test clips,

readjust test current to 250 µA dc and measure output-noise voltage again. To obtain noise density (N_D), subtract

rms resistor output-noise voltage from rms diode output-noise voltage and divide by product of overall system gain

and square root of bandwidth. All measurements shall be made at +25°C.

4.5.6 Decap internal visual scribe and break. Scratch glass at cavity area with diamond scribe. Carefully snap

open. Using 30X magnification examine the area where die (or bonding material) are in contact with the plugs, verify

metallurgical bonding area. If the verification of the metallurgical bonding area is in question with test method 3101 of

MIL-STD-750, and test condition and limits herein, (Z ) shall be used to determine suitability for use.

θJX

11

MIL-PRF-19500/435H

* TABLE I. Group A inspection.

Inspection 1/

Subgroup 1

MIL-STD-750

Symbol

Limits 2/

Unit

Method

2071

Conditions

Min

Max

Visual and mechanical

examination

Subgroup 2

Forward voltage

4011

4016

I_F= 200 mA dc

V_F

I_R1

1.1

V dc

Reverse current leakage

DC method; V_R= column 6 of

table III

Column 7

µA dc

Column 2

Regulator voltage (see

4.5.2)

4022

3101

V_Z

-V tol

Z

+V tol

Z

V dc

I_Z= 250 µA dc

Thermal impedance

Subgroup 3

See 4.3.2

Z_θJX

°C/W

µA dc

High-temperature

operation

T_A= +150°C

Reverse current

Subgroup 4

4016

4051

DC method; V_R= column 6 of

table III

I_R2

Column 3

Small-signal reverse

breakdown impedance

Z_ZT

Column 4

Column 9

Ohms

I_Z= 250 µA dc;

I_SIG= 25 µA ac rms

Noise density (see 4.5.5)

Subgroup 5

N_D

I_Z= 250 µA dc

µV/√ Hz

Not applicable

Subgroup 6

Surge current

4066

4071

See 4.5.1

Electrical measurements

Subgroup 7

Table I, subgroup 2

JANS only

Temperature coefficient of

regulator voltage (see

4.5.3)

Column 8

I_Z= 250 µA dc; T₁= +25°C,

±5°C; T₂= T₁+100°C

αV_Z

%/°C

1/ For sampling plan, see MIL-PRF-19500.

2/ Column references are to table III herein.

12

MIL-PRF-19500/435H

* TABLE II. Group E inspection (all quality levels) – for qualification and requalification only.

Inspection 1/

MIL-STD-750

Conditions

Qualification conformance

inspection (sampling plan)

Method

1051

45 devices, c = 0

Subgroup 1

Temperature cycling

500 cycles.

Electrical measurements

See table I, subgroup 2.

45 devices, c = 0

Subgroup 2

Intermittent life

1037

6,000 cycles. I_Z= column 10 of table III.

See table I, subgroup 2.

Electrical measurements

Subgroup 4

N/A

Thermal impedance curves

Subgroups 5 and 6

Not applicable

See MIL-PRF-19500.

Subgroup 8

n = 45

Resistance to glass

cracking

1057

Condition B. Cool down after solder immersion

is permitted. Test until failure occurs on all

devices or to a maximum of 25 cycles,

whichever comes first.

1/ A separate sample may be pulled for each test.

13

MIL-PRF-19500/435H

* TABLE III. Test ratings, primary electrical characteristics. 1/

Col 1

2/

Col 2

Col 3

Col 4

Col 5

Col 6

V_R

Col 7

I_R

Col 8

Col 9

N_D

Col 10

I_ZPCB

V_Z

nom

I_R

at

Z_ZT

max

I_ZSM

(surge)

αV_Z

T₁= +25°C

T₂=

+150°C

+125°C

___

µV/ √ Hz

Volts

ohm

mA

Volts

mA

µA dc

%/°C

1N4614-1

1N4615-1

1N4616-1

1N4617-1

1N4618-1

1.8

2.0

2.2

2.4

2.7

10.0

8.0

6.0

4.0

2.0

1,200

1,250

1,300

1,400

1,500

1,600

1,500

1,350

1,250

1,100

1.0

3.5

2.5

2.0

1.0

0.5

-0.075

1

120

110

100

95

90

1N4619-1

1N4620-1

1N4621-1

1N4622-1

1N4623-1

3.0

3.3

3.6

3.9

4.3

1.0

7.0

10.0

5.0

1,600

1,650

1,700

1,650

1,600

1,025

950

875

825

800

1.0

1.5

2.0

0.4

3.5

2.5

2.0

-0.075

-0.065

-0.060

-0.050

1

87

85

83

80

77

4.0

1N4624-1

1N4625-1

1N4626-1

1N4627-1

1N4099-1

4.7

5.1

5.6

6.2

6.8

10.0

5.0

1,550

1,500

1,400

1,200

200

750

725

700

650

3.0

4.0

5.0

5.2

5.0

1.0

+.020,-.050

+.030,-.045

+.040,-.020

+.050,-.010

+.060

1

2

4

5

40

75

70

65

61

56

1N4100-1

1N4101-1

1N4102-1

1N4103-1

1N4104-1

7.5

8.2

8.7

9.1

10.0

5.0

200

650

5.7

6.3

6.7

7.0

7.6

1.0

0.5

+.065

+.070

+.075

+.080

40

51

46

44

42

38

1N4105-1

1N4106-1

1N4107-1

1N4108-1

1N4109-1

11.0

12.0

13.0

14.0

15.0

5.0

200

100

590

540

500

464

433

8.5

9.2

9.9

10.7

11.4

0.05

+.080

+.085

40

35

32

29

27

25

See footnotes at end of table.

14

MIL-PRF-19500/435H

* TABLE III. Test ratings, primary electrical characteristics - Continued. 1/

Col 1

2/

Col 2

Col 3

Col 4

Col 5

Col 6

V_R

Col 7

I_R

Col 8

αV_Z

T₁= +25°C

T₂=

Col 9

N_D

Col 10

I_ZPCB

V_Z

nom

I_R

at

Z_ZT

max

I_ZSM

(surge)

+150°C

+125°C

___

µV/ √ Hz

Volts

Ohms

mA

volts

mA

µA dc

%/°C

1N4110-1

1N4111-1

1N4112-1

1N4113-1

1N4114-1

16.0

17.0

18.0

19.0

20.0

5.0

2.5

100

150

406

382

361

342

325

12.2

13.0

13.7

14.5

15.2

0.05

0.01

+.085

+.090

40

24

22

21

20

19

1N4115-1

1N4116-1

1N4117-1

1N4118-1

1N4119-1

22.0

24.0

25.0

27.0

28.0

2.5

150

200

295

271

260

240

232

16.8

18.3

19.0

20.5

21.3

0.01

+.090

+.095

40

17

16

15

14

1N4120-1

1N4121-1

1N4122-1

1N4123-1

1N4124-1

30.0

33.0

36.0

39.0

43.0

2.5

200

250

216

197

180

166

151

22.8

25.1

27.4

29.7

32.7

0.01

+.095

40

13

12

11

9.8

8.9

1N4125-1

1N4126-1

1N4127-1

1N4128-1

1N4129-1

47.0

51.0

56.0

60.0

62.0

4.0

5.0

250

300

400

500

138

127

116

108

105

35.8

38.8

42.6

45.6

47.1

0.01

+.095

+.100

40

8.1

7.5

6.7

6.4

6.1

1N4130-1

1N4131-1

1N4132-1

1N4133-1

1N4134-1

68.0

75.0

82.0

87.0

91.0

7.0

8.0

10.0

700

800

1,000

1,200

95

86

79

75

71

51.7

57.0

62.4

66.2

69.2

0.01

+.100

40

5.6

5.1

4.6

4.4

4.2

1N4135-1

100.0

10.0

1,600

65

76.0

0.01

+.100

40

3.8

1/ Unless otherwise specified T_C= 25°C.

2/ Applies to all voltage tolerance devices (example: 1N4099-1 is ±5 percent, 1N4099C-1 is ±2 percent, and

1N4099D-1 is ±1 percent tolerance).

15

MIL-PRF-19500/435H

NOTE: LS = lead spacing = .375 inch (9.53 mm) for non-surface mount devices and 0 inch for

surface mount devices.

FIGURE 4. Mounting conditions.

NOTES:

1. Input voltage and lead resistance should be high so that zener can be driven from a constant current

source.

2. Input impedance of band pass filter should be high compared with the dynamic impedance of the

diode under test.

3. Filter bandwidth characteristics shall be as follows:

a. f = 2,000 Hz.

o

b. Shape factor, -40 db to -3 dB, approximately 2.

c. Passband at the -3 dB is 1,000 Hz ±50 Hz to 3,000 Hz ±150 Hz.

d. Passband at the -40 dB is 500 Hz ±50 Hz to 6,000 Hz ±600 Hz.

FIGURE 5. Circuit for determination of noise density.

16

MIL-PRF-19500/435H

Temperature-Power Derating Curve

DO-7, DO-35

600

500

400

300

200

100

0

25

DC Operation

Thermal Resistance Junction to Leads 3/8" = 250ºC/W

50

75

100

125

150

175

200

Tl (ºC) (Leads 3/8")

NOTES:

1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect

J

the appropriate power for the desired maximum T allowed.

J

2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and power rating specified.

J

(See 1.3 herein.)

3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.

J

4. Derate design curves chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T

J

in their application.

* FIGURE 6. Temperature-power derating curve (DO-35).

17

MIL-PRF-19500/435H

Temperature-Power Derating Curve

DO-213AA

600

500

400

300

200

100

0

25

DC Operation

Thermal Resistance Junction to End Cap = 100ºC/W

50

75

100

125

150

175

200

Tec (ºC) (End Cap)

NOTES:

1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect

J

the appropriate power for the desired maximum T allowed.

J

2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and power rating specified.

J

(See 1.3 herein.)

3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.

J

4. Derate design curves chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T

J

in their application.

FIGURE 7. Temperature-power derating curve (DO-213AA).

18

MIL-PRF-19500/435H

Temperature-Power Derating Curve

DO-7, DO-35

450

400

350

300

250

200

150

100

50

0

25

DC Operation

Thermal Resistance Junction to PCB = 300ºC/W

50

75

100

125

150

175

200

Tpcb (ºC) (PCB)

NOTES:

1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect

J

the appropriate power for the desired maximum T allowed.

J

2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and power rating specified.

J

(See 1.3 herein.)

3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.

J

4. Derate design curves chosen at T ≤ 125°C, and 110°C to show power rating where most users want to limit T

J

in their application.

FIGURE 8. Temperature-power derating curve (PCB).

19

MIL-PRF-19500/435H

Thermal Impedance

1000

100

10

1

0.0001

0.001

0.01

0.1

Time (s)

1

10

100

1000

Thermal impedance DO-35 PCB mount, FR4, 1oz Cu, 2.0 x 3.4 inches (50 x 87 mm) pad (MELF) and 3.6 inches

(92mm) diameter (axial with .125 inch (3.18 mm) lead length) at T_A= 25°C.

NOTE: Thermal resistance = 300°C/W. Maximum power rating = 400 mW at T_A= 55°C.

* FIGURE 9. Thermal impedance DO-35 PCB mount.

20

MIL-PRF-19500/435H

Thermal Impedance

1000

100

10

1

0.0001

0.001

0.01

0.1

1

10

100

Time (s)

Thermal impedance DO-35 axial, T_J= 25°C at .375 inch (9.525 mm) from body.

NOTE: Thermal resistance = 250°C/W. Maximum power rating = 500 mW at T_J= 50°C.

* FIGURE 10. Thermal impedance DO-35 axial.

21

MIL-PRF-19500/435H

Thermal Impedance

1000

100

10

1

0.0001

0.001

0.01

0.1

1

10

Time (s)

Thermal impedance DO-213A MELF, T = 25°C.

ec

NOTE: Thermal resistance = 100°C/W. Maximum power rating = 500 mW at T = 125°C.

ec

* FIGURE 11. Thermal impedance DO-213A MELF.

22

MIL-PRF-19500/435H

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

* (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The

notes specified in MIL-PRF-19500 are applicable to this specification.)

* 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. Product assurance level and type designator.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail

vqe.chief@dla.mil.

6.4 Substitution information.

6.4.1 Substitutability of 2 percent and 1 percent tolerance devices. Devices of tighter tolerance are a direct one

way substitute for the looser tolerance devices (example: JANTX1N4614D-1 substitutes for JANTX1N4614-1).

23

MIL-PRF-19500/435H

6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter

version (example: JANHCA1N4614) will be identified on the QML.

JANC ordering information

(1)

Manufacturer CAGE

(1)

Manufacturer CAGE

43611

(2)

12954

(2)

43611

(2)

12954

(2)

1N4099-1

1N4100-1

1N4101-1

1N4102-1

1N4103-1

JANHCA1N4099

JANHCA1N4100

JANHCA1N4101

JANHCA1N4102

JANHCA1N4103

JANHCB1N4099

JANHCB1N4100

JANHCB1N4101

JANHCB1N4102

JANHCB1N4103

1N4124-1

1N4125-1

1N4126-1

1N4127-1

1N4128-1

JANHCA1N4124

JANHCA1N4125

JANHCA1N4126

JANHCA1N4127

JANHCA1N4128

JANHCB1N4124

JANHCB1N4125

JANHCB1N4126

JANHCB1N4127

JANHCB1N4128

1N4104-1

1N4105-1

1N4106-1

1N4107-1

1N4108-1

JANHCA1N4104

JANHCA1N4105

JANHCA1N4106

JANHCA1N4107

JANHCA1N4108

JANHCB1N4104

JANHCB1N4105

JANHCB1N4106

JANHCB1N4107

JANHCB1N4108

1N4129-1

1N4130-1

1N4131-1

1N4132-1

1N4133-1

JANHCA1N4129

JANHCA1N4130

JANHCA1N4131

JANHCA1N4132

JANHCA1N4133

JANHCB1N4129

JANHCB1N4130

JANHCB1N4131

JANHCB1N4132

JANHCB1N4133

1N4109-1

1N4110-1

1N4111-1

1N4112-1

1N4113-1

JANHCA1N4109

JANHCA1N4110

JANHCA1N4111

JANHCA1N4112

JANHCA1N4113

JANHCB1N4109

JANHCB1N4110

JANHCB1N4111

JANHCB1N4112

JANHCB1N4113

1N4134-1

1N4135-1

1N4614-1

1N4615-1

1N4616-1

JANHCA1N4134

JANHCA1N4135

JANHCA1N4614

JANHCA1N4615

JANHCA1N4616

JANHCB1N4134

JANHCB1N4135

JANHCB1N4614

JANHCB1N4615

JANHCB1N4616

1N4114-1

1N4115-1

1N4116-1

1N4117-1

1N4118-1

JANHCA1N4114

JANHCA1N4115

JANHCA1N4116

JANHCA1N4117

JANHCA1N4118

JANHCB1N4114

JANHCB1N4115

JANHCB1N4116

JANHCB1N4117

JANHCB1N4118

1N4617-1

1N4618-1

1N4619-1

1N4620-1

1N4621-1

JANHCA1N4617

JANHCA1N4618

JANHCA1N4619

JANHCA1N4620

JANHCA1N4621

JANHCB1N4617

JANHCB1N4618

JANHCB1N4619

JANHCB1N4620

JANHCB1N4621

1N4119-1

1N4120-1

1N4121-1

1N4122-1

1N4123-1

JANHCA1N4119

JANHCA1N4120

JANHCA1N4121

JANHCA1N4122

JANHCA1N4123

JANHCB1N4119

JANHCB1N4120

JANHCB1N4121

JANHCB1N4122

JANHCB1N4123

1N4622-1

1N4623-1

1N4624-1

1N4625-1

1N4626-1

JANHCA1N4622

JANHCA1N4623

JANHCA1N4624

JANHCA1N4625

JANHCA1N4626

JANHCB1N4622

JANHCB1N4623

JANHCB1N4624

JANHCB1N4625

JANHCB1N4626

1N4627-1

JANHCA1N4627

JANHCB1N4627

(1) C and D tolerance suffix are applicable to JANC chips.

(2) For JANKC level, replace "JANHC" with "JANKC".

6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes no

liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

24

MIL-PRF-19500/435H

Custodians:

Army - CR

Navy - EC

Preparing activity:

DLA - CC

Air Force - 11

NASA – NA

DLA - CC

(Project 5961-2006-070)

Review activities:

Army - AR, AV, MI, SM

Navy - AS, MC

Air Force - 19, 70, 99

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at http://assist.daps.dla.mil.

25

生命周期：	Obsolete	包装说明：	O-LELF-R2
Reach Compliance Code：	unknown	风险等级：	5.72
Is Samacsys：	N	其他特性：	METALLURGICALLY BONDED
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	0.5 W	认证状态：	Not Qualified
参考标准：	MIL-19500/435F	标称参考电压：	60 V
表面贴装：	YES	技术：	ZENER
端子形式：	WRAP AROUND	端子位置：	END
最大电压容差：	1%	工作测试电流：	0.25 mA
Base Number Matches：	1

型号	制造商	描述	价格	文档
JANTX1N4128DURTR	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4128DURTR-1	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4128UR	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4128UR-1	MICROSEMI	SILICON 400mA LOW NOISE ZENER DIODES	获取价格
JANTX1N4128URTR	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4128URTR-1	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4129	MICROSEMI	SILICON 400mA LOW NOISE ZENER DIODES	获取价格
JANTX1N4129-1	MICROSEMI	SILICON 500mA LOW NOISE ZENER DIODES	获取价格
JANTX1N4129-1/TR	MICROSEMI	Zener Diode, 62V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN	获取价格
JANTX1N4129C	MICROSEMI	SILICON 400mA LOW NOISE ZENER DIODES	获取价格

JANTX1N4128DUR-1

JANTX1N4128DUR-1 概述

JANTX1N4128DUR-1 规格参数

JANTX1N4128DUR-1 数据手册

JANTX1N4128DUR-1 相关器件

JANTX1N4128DUR-1 相关文章

热门型号