JANTXV1N939UR-1 [CDI-DIODE]
DIODE 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Reference Diode;
| 型号： | JANTXV1N939UR-1 |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | DIODE 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Reference Diode 二极管 |
| 文件： | 总15页 (文件大小：494K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 October 2004.
INCH-POUND
MIL-PRF-19500/156M
1 July 2004
SUPERSEDING
MIL-PRF-19500/156L
18 September 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE
TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1,
AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1,
JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias
current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type
as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided
for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35) and figure 2 (DO-213AA).
1.3 Maximum ratings. (Unless otherwise specified TA = +25°C).
PT
TSTG and T
IZM (1)
Power derating
above TA = +25°C
J
mW
500
mA dc
50
°C
mW/°C
3.33
-65 to +175
(1) To guarantee voltage temperature stability, it is necessary to maintain an IZ of 7.5mA dc.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/156M
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T =
+25°C.
IR
A
ZZ
∆VZ
VZ
Type (1)
(voltage - temperature
stability)
VR = 6.0 V
IZ = 7.5 mA dc
IZ = 7.5 mA dc
Min
volts
8.55
8.55
8.55
8.55
8.55
Max
mV dc
184
37
ohms
20
volts
9.45
9.45
9.45
9.45
9.45
µA
1N935B-1, 1N935BUR-1
1N937B-1, 1N937BUR-1
1N938B-1, 1N938BUR-1
1N939B-1, 1N939BUR-1
1N940B-1, 1N940BUR-1
10.0
10.0
10.0
10.0
10.0
20
19
20
9
3.7
20
20
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper IZ = 7.5 mA dc.
2. APPLICABLE DOCUMENTS
*
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
*
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
*
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
-
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or
http://www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.4 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/156M
Dimensions
Inches Millimeters
Symbol
Notes
Min
Max
.107
Min
1.52
3.05
0.46
25.40
Max
2.72
7.62
0.58
38.10
1.27
BD
BL
LD
LL
.060
.120
3
3
.300
.018
.023
1.000
1.500
0.050
LL1
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within
this cylinder but shall not be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than
heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions 1N935B-1, 1N937B-1 through 1N940B-1 (DO-7 and DO-35).
3
MIL-PRF-19500/156M
Dimensions
Millimeters
Symbol
Inches
Min
Max
.067
.022
.146
Min
1.60
0.41
3.30
Max
1.70
0.56
3.70
BD
.063
.016
.130
ECT
BL
S
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions 1N935BUR-1, 1N937BUR-1 through 1N940BUR-1 (DO-213AA).
4
MIL-PRF-19500/156M
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and figures 1 and 2 herein.
* 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Diode construction. These devices shall be constructed in a manner and using material which enable the
diodes to meet the applicable requirements of MIL-PRF-19500 and this document.
3.5.1 Dash-one construction. Shall be as specified in MIL-PRF-19500.
3.5.2 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with
PRF-19500.
MIL-
3.6 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6.1 Marking of "UR" version devices. For "UR" version devices only, all marking (except polarity) may be
from the body, but shall be retained on the initial container.
omitted
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I herein.
Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
3.8
4.4.3.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
* 4.1.1 Sampling inspection. Sampling inspection shall be in accordance with MIL-PRF-19500 and as specified
herein, except that lot accumulation period shall be 3 months in lieu of 6 weeks.
5
MIL-PRF-19500/156M
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and 4.4.5
herein.
4.2.2 Radiation hardened devices. See MIL-PRF-19500 and 4.4.4 herein.
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, appendix E and as specified herein. Specified electrical measurements shall be made in
accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
appendix E,
JANS level
JANTXV and JANTX level
table IV of
MIL-PRF-19500)
1a
1b
2
3a
3b
3c
4
5
6
7a
7b
8
Required
Not required
Required
Required (JANTXV only)
Not required
Not required
Required
Required
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Optional
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Optional
Required
Not required
9
10
11
Not applicable
Not applicable
Required VZ, ZZ
Not applicable
Not applicable
Required VZ, ZZ
12
13
Required see 4.3.1
Required see 4.3.1
Required
Required
Subgroups 2 and 3 of table I herein; ∆ZZ ≤ ±15
Subgroup 2 of table I herein; ∆ZZ ≤ ±15 percent of
percent of initial reading. At TA = +25°C ±2°C,
initial reading. TA = +25°C ±2°C, ∆VZ ≤ ±0.004 V dc
∆VZ ≤ ±0.004 V dc from initial value for 1N935B-
from initial value for 1N935B-1, 1N935BUR-1,
1N937B-1, and 1N937BUR-1.
1, 1N935BUR-1, 1N937B-1, and 1N937BUR-1.
∆VZ ≤ ±0.003 V dc from initial value for 1N938B-
∆VZ ≤ ±0.003 V dc from initial value for 1N938B-1,
1N938BUR-1, 1N939B-1, and 1N939BUR-1. ∆VZ ≤
1, 1N938BUR-1, 1N939B-1, and 1N939BUR-1.
∆VZ ≤ ±0.002 V dc from initial value for 1N940B-
±0.002 V dc from initial value for 1N940B-1,
1N940BUR-1.
1, 1N940BUR-1.
Not applicable
Required (1) (2)
Required
14a
14b
15
Not applicable
Required (1) (2)
Not required
16
Required
Not required
(1) See MIL-PRF-19500.
(2) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after temperature cycling.
6
MIL-PRF-19500/156M
(3)
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: IZ = 7.5 mA dc, ±0.75 mA dc,
TA = +150°C, +5°C, -0°C.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Electrical
measurements (end-points) shall be in accordance with the applicable steps of table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. For purposes of JANS inspection, a single
device type shall be defined as devices from a single wafer lot (for each die type used in the construction). The
conformance inspection sample shall be selected from the part category with the lowest ∆VZ rating in the inspection
lot.
Subgroup
B1
Method
2066
2026
1022
1056
4066
1071
2075
1037
Conditions
As specified.
B2
As specified.
As specified.
B3
Test condition A, 25 cycles.
Not applicable.
Test condition E.
As specified.
B4
IZ = 25 mA dc at T = room ambient; ton = toff = 30 seconds minimum for 4,000
cycles. Forced airAcooling allowed during off cycle.
B5
B6
1027
IZM = 50 mA dc for 96 hours. TA = +75°C, adjust TA to achieve TJ = +200°C
minimum.
Not applicable.
7
MIL-PRF-19500/156M
* 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
B1
Method
2026
1022
1056
4066
1071
1027
2075
Conditions
As specified.
As specified.
B2
Test condition A, 25 cycles.
Not applicable.
Test condition E.
See 4.3.1.
B3
B4
B5
B6
As specified.
Not applicable.
As specified.
1032
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table VII of MIL-PRF-19500. Electrical measurements (end-points) requirements
shall be in accordance with the applicable steps of table I, subgroup 2 herein.
* 4.4.3.1 Group C inspection, appendix E table VII of MIL-PRF-19500.
Subgroup
C1
Method
2066
Conditions
As specified.
C2
1056
Test condition A, 25 cycles.
2036
Tension: Test condition A; 4 pounds weight, t = 15 ±3 seconds;
Lead fatigue: Test condition E (lead fatigue and tension tests are not
applicable to surface mount "UR" version devices).
1071
1021
Test condition E.
Omit initial conditioning.
Not applicable.
C3
C4
C5
C6
1041
1026
As specified.
Not applicable.
IZ = 7.5 mA dc, TA = +100°C. (see 4.5.2).
C7
Not applicable.
8
MIL-PRF-19500/156M
* 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with appendix E, table VIII of
MIL-
PRF-19500. Submitted lots for group D sample inspection must be constructed using one homogeneous wafer lot for
the zener and one wafer lot for the compensating die, as also described in the submitted DSCC Design and
Construction form 36D (see table II herein).
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup tests in appendix E, table IX of MIL-PRF-19500 and table III herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Voltage-temperature stability. The breakdown voltage of each diode type shall be measured and recorded
each of the specified temperatures. The lowest measured voltage shall be subtracted from the highest measured
voltage for each diode. The difference value obtained shall not exceed the specified ∆VZ per diode type.
at
4.5.2 Reference voltage time stability. The breakdown voltage shall be measured prior to life testing, at 340
hours,
and at the conclusion of the life test as shown in table IV. The 340-hour reading shall be compared with the 0-hour
reading and the 1,000-hour reading compared with the 340-hour reading. The change in breakdown voltage shall not
exceed the limits specified. The test temperature for breakdown voltage shall be the same as the specified ambient
life test temperature (see table IV herein).
4.5.3 Reference voltage. The test current shall be applied until thermal equilibrium is attained (15 seconds
minimum) prior to reading the reference voltage. For this test, the diode shall be suspended by its leads with
mounting clips whose inside edge is located between .375 inch (9.53 mm) and .500 inch (12.70 mm) inch from the
body and the mounting clips shall be maintained at the specified temperature. This measurement may be performed
after a shorter time following application of the test current than that which provides thermal equilibrium if correlation
to stabilized readings can be established to the satisfaction of the Government.
9
MIL-PRF-19500/156M
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limits
Max
Unit
Method
2071
Min
Visual and mechanical
examination
Subgroup 2
Reference voltage
4022
4051
VZ
ZZ
8.55
9.45
20.0
V dc
IZ = 7.5 ±0.01 mA dc (see 4.5.3)
Small-signal
ohms
IZ = 7.5 ±0.1 mA dc,
Isig = 0.75 mA ac
breakdown impedance
Subgroup 3
Voltage-temperature
stability (see 4.5.1
and 4.5.3)
IZ = 7.5 ±0.01 mA dc,
TA = -55°C, 0°C,
+25°C, +75°C, +150°C ±2°C
∆VZ
1N935B-1, 1N935BUR-1
1N937B-1, 1N937BUR-1
1N938B-1, 1N938BUR-1
1N939B-1, 1N939BUR-1
1N940B-1, 1N940BUR-1
Subgroups 4, 5, and 6
Not applicable
184.0
37.0
19.0
9.0
mV dc
mV dc
mV dc
mV dc
mV dc
3.7
Subgroup 7
Reverse current
leakage
4016
DC method; VR = 6.0 V dc
IR
10.0
µA
1/ For sampling plan, see MIL-PRF-19500.
10
MIL-PRF-19500/156M
TABLE II. Group D inspection.
Inspection
1/ 2/
MIL-STD-750
Symbol JANTXV and
JANTXV and
JANS
Unit
∆VZ1
Pre-to post-
JANS
Pre-
Post-
irradiation
limits
irradiation
limits
Method
Conditions
M, D, L, R,
F, G, and H
M, D, L, R,
F, G, and H
irradiation
change
Min
Max
Min
Max
Min
Max
Subgroup 1
Not applicable
Subgroup 2
Steady-state
total
1019
IZ = 7.5
±0.01 mA dc,
dose irradiation
condition A
Reference
voltage
4022
4051
IZ = 7.5
±0.01 mA dc
VZ
ZZ
8.55
9.45
20
8.55
9.45
V dc
ohms
µA dc
(see 4.5.3)
Small-signal
breakdown
impedance
IZ = 7.5
±0.01 mA dc,
20
Reverse current
leakage
4016
4022
DC method,
I
10.0
10.0
R
VR = 6.0 V dc
Voltage stability
(see 4.5.1)
IZ = 7.5
∆VZ
±0.01 mA dc,
TA = +25°C
±2°C
1N935B-1,
±4.0
±3.5
±3.0
±2.5
±1.5
mV
mV
mV
mV
mV
1N935BUR-1
1N937B-1,
1N937BUR-1
1N938B-1,
1N938BUR-1
1N939B-1,
1N939BUR-1
1N940B-1,
1N940BUR-1
1/ For sampling plan, see MIL-PRF-19500.
2/ Group D qualification may be performed anytime prior to lot formation.
11
MIL-PRF-19500/156M
* TABLE III. Group E inspection qualification and requalification (all product assurance levels).
Qualification conformance
Inspection
MIL-STD-750
Conditions
inspection (sampling plan)
Method
1051
Subgroup 1
Temperature cycling
Electrical measurements
Subgroup 2
22 devices, c = 0
500 cycles.
See table I, subgroup 2.
22 devices, c = 0
3 devices, c = 0
Steady-state operation life
1038
2101
Condition B, 1,000 hours (see 4.3.1).
See table I, subgroup 2 herein.
Electrical measurements
Subgroup 3
Decap analysis
Cross section and scribe and break.
Separate samples shall be used for each
test.
Subgroups 4, 5, 6, and 7
Not applicable
Subgroup 8
45 devices
Resistance to glass
cracking
1057
Step stress to destruction by increasing
cycles or up to a maximum of 25 cycles.
12
MIL-PRF-19500/156M
TABLE IV. Reference voltage time stability.
Inspection
MIL-STD-750
Conditions
Symbol
Limits
Max
Unit
Min
Reference-voltage time
stability
TA = +100°C ±2°C (see 4.5.2 and
4.5.3). IZ = 7.5 ±0.01 mA dc
∆VZ
1N935B-1, 1N935BUR-1
1N937B-1, 1N937BUR-1
1N938B-1, 1N938BUR-1
1N939B-1, 1N939BUR-1
1N940B-1, 1N940BUR-1
(0 to 340 hours)
7
7
6
5
3
mV dc
mV dc
mV dc
mV dc
mV dc
1N935B-1, 1N935BUR-1
1N937B-1, 1N937BUR-1
1N938B-1, 1N938BUR-1
1N939B-1, 1N939BUR-1
1N940B-1, 1N940BUR-1
(340 to 1,000 hours)
4
4
3
3
1
mV dc
mV dc
mV dc
mV dc
mV dc
13
MIL-PRF-19500/156M
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
*
order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel,
these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
*
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail
vqe.chief@dla.mil.
6.4 Substitution of radiation hardened devices. See MIL-PRF-19500.
6.5 Substitution of ∆VZ devices. Device types within this series with higher type numbers (lower ∆VZ) are a direct
one-way substitution for lower type numbers (higher ∆VZ).
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
14
MIL-PRF-19500/156M
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2883)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http://www.dodssp.daps.mil .
15
相关型号：
JANTXV1N940
Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
JANTXV1N940A-1
Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
JANTXV1N940B
Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-7, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
JANTXV1N941B
Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
MICROSEMI
JANTXV1N941BUR-1
Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, SIMILAR TO DO-213AA, 2 PIN
MICROSEMI
JANTXV1N941BUR-1
Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, SIMILAR TO DO-213AA, 2 PIN
CDI-DIODE
JANTXV1N943-1
Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
CDI-DIODE
JANTXV1N943BUR-1
Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, SIMILAR TO DO-213AA, 2 PIN
CDI-DIODE
©2020 ICPDF网 联系我们和版权申明