2N4401 [CDIL]
NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS; NPN PNP硅平面外延晶体管
| 型号： | 2N4401 |
| 厂家： | 
Continental Device India Limited |
| 描述： | NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-92 Plastic Package
2N4400, 2N4401
2N4402, 2N4403
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
DIM
A
MIN
MAX
5,33
5,20
4,19
0,55
0,50
4,32
4,45
3,18
0,41
0,35
B
C
D
E
F
5 DEG
G
H
K
1,14
1,40
1,53
–
1,14
12,70
1.982
L
2.082
ALL DIMENSIONS IN M.M.
1 = EMITTER
2 = BASE
3 = COLLECTOR
ABSOLUTE MAXIMM RATINGS
Rating
Symbol
2N4400/ 01
2N4402/ 03
Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
40
60
6
-
40
40
5
-
V
CEO
V
V
CBO
V
V
EBO
Collector Current Continuous
Power Dissipation At Ta=25 ºC
Derate Above 25 ºC
I
600
625
m A
mW
C
P
-
-
D
-
5.0
-
mW/ ºC
W
Power Dissipation At Tc=25 ºC
Derate Above 25 ºC
P
-
1.5
-
D
-
12
-
mW/ ºC
ºC
Operating & Storage
T ,T
-55 to +150
j
stg
Junction Temperature Range
THERMAL RESISTANCE
Junction to Case
R
R
-
-
83.3
200
-
-
ºC/ W
ºC/ W
th (j-c)
Junction to Ambient
th (j-a)
ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)
Continental Device India Limited
Data Sheet
Page 1 of 6
2N4400, 2N4401
2N4402, 2N4403
Characteristic
Symbol
2N4400/01
2N4402/03
Unit
Collector Emitter Voltage
I =1mA, I =0
BV
BV
BV
I
*
>40
>60
>6
>40
>40
>5
V
C
B
CEO
CBO
EBO
Collector Base Voltage
I =100µA, I =0
V
C
E
Emitter Base Voltage
I =100µA, I =0
V
E
C
Base Cutoff Current
=35V, V =0.4V
V
<0.1
<0.1
µA
µA
CE
BE
BEV
Collector Cutoff Current
=35V, V =0.4V
V
I
CEX
<0.1
<0.1
CE
BE
Collector-Emitter
Saturation Voltage
I =150mA, I =15mA
V
*
*
<0.4
<0.4
V
V
C
B
CE (sat)
I =500mA, I =50mA
<0.75
<0.75
C
B
Base-Emitter
Saturation Voltage
I =150mA, I =15mA
V
0.75 to 0.95 0.75 to 0.95
<1.2 <1.3
V
V
C
B
BE (sat)
I =500mA,I =50mA
C
B
Characteristic
Symbol 2N4400 2N4401 2N4402 2N4403 Unit
D C Current Gain
I =0.1mA,V =1V
h
-
>20
>40
>20
>40
>80
-
>30
>50
-
>30
>60
>100
-
C
CE
FE
I =1mA,V =1V
C
CE
I =10mA,V =1V
C
CE
I =150mA,V =1V*
50-150 100-300
C
CE
I =150mA,V =2V*
-
-
50-150 100-300
>20 >20
C
CE
I =500mA,V =2V*
>20
>40
C
CE
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
I =1mA, V =10V, f=1KHz
h
20-250 40-500
30-250 60-500
C
CE
fe
ie
Input Impedance
I =1mA, V =10V, f=1KHz
h
0.5-7.5
1.0-15 0.75-7.5 1.5-15
KΩ
C
CE
Continental Device India Limited
Data Sheet
Page 2 of 6
2N4400, 2N4401
2N4402, 2N4403
Characteristic
Symbol 2N4400 2N4401 2N4402 2N4403 Unit
–4
Voltage Feedback Ratio
h
ALL
0.1-8.0
x10
re
I =1mA, V =10V, f=1KHz
C
CE
Output Admittance
I =1mA, V =10V, f=1KHz
h
oe
1.0-30
1.0-30 1.0-100 1.0-100
µ
C
CE
Collector-Base Capacitance
V
V
=5V, I =0, f=100KHz
C
C
f
<6.5
-
<6.5
-
-
-
pF
pF
CB
CB
E
cb
eb
=10V, I =0, f=140KHz
<8.5
<8.5
E
Emitter-Base Capacitance
V
V
=0.5V, I =0, f=100KHz
<30
-
<30
-
-
-
pF
pF
EB
EB
C
=0.5V, I =0, f=140KHz
<30
<30
C
Transition Frequency
I =20mA, V =10V
>200
>250
>150
>200
MHz
C
CE
T
f=100MHz
SWITCHING CHARACTERISTICS
=30V, V =2V,
V
CC
EB
I =150mA, I =15mA
C
B1
Delay time
t
t
ALL
ALL
<15
<20
ns
ns
d
r
Rise time
V
I
=30V, I =150mA,
C
CC
=I =15mA
B1 B2
Storage time
Fall time
t
t
ALL
ALL
<225
<30
ns
ns
s
f
*Pluse Test : Pluse width ≤ 300µs, duty ≤ 2.0%.
Continental Device India Limited
Data Sheet
Page 3 of 6
2N4400, 2N4401
2N4402, 2N4403
DC Current Gain
V
=1.0V
CE
V
=10V
CE
T =125°C
J
25°C
–55°C
IC Collector Current (mA)
DC Current Gain
T =25°C
J
I
=1.0mA
10mA
100mA
500mA
C
IB Base Current (mA)
On Voltages
T =25°C
J
V
@I /I =10
C B
BE(sat)
V
@V =1.0V
CE
BE
V
@I /I =10
C B
CE(sat)
IC Collector Current (mA)
Continental Device India Limited
Data Sheet
Page 4 of 6
2N4400, 2N4401
2N4402, 2N4403
DC Current Gain
VCE=1.0V
VCE=10V
T =125°C
J
25°C
–55°C
IC Collector Current (mA)
Collector Saturation Region
I
=1mA
10mA
100mA
500mA
C
IB Base Current (mA)
On Voltages
T =25°C
J
V
@I /I =10
C B
BE(sat)
V
@V =1.0V
CE
BE
V
@I /I =10
C B
CE(sat)
IC Collector Current (mA)
Continental Device India Limited
Data Sheet
Page 5 of 6
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 6 of 6
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