CSA1162Y-3E [CDIL]
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR; 低频通用放大器晶体管
| 型号： | CSA1162Y-3E |
| 厂家： | 
Continental Device India Limited |
| 描述： | LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
CSA1162
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
P-N-P transistor
Marking
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
CSA1162Y–3E
CSA1162GR(G)–3F
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.)
–V
–V
–V
max.
max.
max.
max.
max.
max.
50 V
50 V
5 V
150 mA
150 mW
150 ° C
CBO
CEO
EBO
–I
C
Total power dissipation at T
Junction temperature
D.C. current gain
= 25°C
P
amb
tot
T
j
–I = 2 mA; –V
C
= 6V
h
min.
70
CE
FE
max.
400
RATINGS (at T = 25°C unless otherwise specified)
A
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.)
–V
–V
–V
max.
max.
max.
max.
max.
50 V
50 V
5 V
150 mA
30 mA
CBO
CEO
EBO
–I
–I
C
Base current
B
Continental Device India Limited
Data Sheet
Page 1 of 2
CSA1162
Total power dissipation at T
Storage temperature
= 25°C
P
tot
Tstg
max.
–50 to +150 ° C
150 mW
amb
Junction temperature
T
j
max.
150 ° C
CHARACTERISTICS (at T = 25°C unless otherwise specified)
A
Collector-emitter breakdown voltage
–I = 1 mA; I = 0
–V
min
50 V
100 nA
100 nA
0.3 V
C
B
(BR)CEO
Collector cut-off current
–V = 50 V; I = 0
–I
max.
max.
max.
CB
E
CBO
Emitter cut-off current
= 5 V; I = 0
V
EB
I
EBO
C
Saturation voltage
–I = 100 mA; –I = 10 mA
–V
CEsat
C
B
D.C. current gain
I
C
= 2 mA; –V
= 6 V
h
FE
min.
70
CE
max.
400
Y
min.
max.
120
240
GR(G)
min.
max.
200
400
Transition frequency
= 10 V; I = 1 mA
V
CE
f
T
min.
80 MHz
7 pF
C
Collector output capacitance
= 10 V; I = 0; f = 1 MHz
V
CB
C
N
max.
E
ob
F
Noise figure
= 6 V; I = 0.1 mA
V
CE
C
f = 1 kHz; R = 10 kW
max.
10 dB
g
Continental Device India Limited
Data Sheet
Page 2 of 2
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 2
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