CSB858D [CDIL]
PNP / NPN PLASTIC POWER TRANSISTORS; PNP / NPN塑料功率晶体管
| 型号： | CSB858D |
| 厂家： | 
Continental Device India Limited |
| 描述： | PNP / NPN PLASTIC POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
CSB857, CSB858
CSD1133, CSD1134
CSB857, 858
PNP PLASTIC POWER TRANSISTORS
CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier
PIN CONFIGURATION
1. BASE
4
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
C
DIM MIN.
MAX.
E
B
F
A
B
C
D
E
14.42
9.63
3.56
16.51
10.67
4.83
0.90
1.40
3.88
2.79
3.43
0.56
14.73
4.07
2.92
31.24
1.15
3.75
2.29
2.54
1
2
3
F
G
H
J
K
L
M
N
O
12.70
2.80
2.03
J
D
G
M
DEG 7
ABSOLUTE MAXIMUM RATINGS
857
858
1133
1134
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
V
max. 70
max. 50
max.
70 V
60 V
A
CBO
V
CEO
I
4.0
40
C
Total power dissipation up to T = 25°C
P
max.
W
C
tot
Junction temperature
T
j
max.
150
°C
Collector-emitter saturation voltage
I
C
= 2 A; I = 200 mA
V
CEsat
max.
1.0
V
B
D.C. current gain
I
C
= 1 A; V = 4 V
h
FE
min.
60
CE
max.
320
RATINGS (at T =25°C unless otherwise specified)
A
Limiting values
857
1133
max. 70
max. 50
max.
858
1134
70 V
60 V
V
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
V
CBO
V
CEO
V
EBO
5.0
Continental Device India Limited
Data Sheet
Page 1 of 3
CSB857, CSB858
CSD1133, CSD1134
Collector current
Collector current (Peak value)
Total power dissipation up to T = 25°C
Junction temperature
Storage temperature
I
I
P
T
T
max.
max.
max.
max.
4.0
8.0
40
A
A
W
ºC
C
C
C
tot
150
j
–65 to +150 ºC
stg
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
857
1133
858
1134
Collector cutoff current
= 0; V = 50V
I
I
CBO
max.
1.0
µA
E
CB
Breakdown voltages
= 50 mA; I = 0
I
C
V
min. 50
min.
min.
60 V
V
B
CEO
CBO
EBO
I
C
= 10 µA; I = 0
V
V
70
5.0
E
I
E
= 10 µA; I = 0
V
C
Saturation voltage
= 2 A; I = 0.2 A
Base emitter on voltage
I
C
V
V
*
max.
max.
min.
1.0
1.0
35
V
V
B
CEsat
I
= 1 A; V = 4 V
*
BE(on)
C
CE
D.C. current gain
= 0.1 A; V
I
C
= 4 V
h
FE*
CE
I
C
= 1.0 A; V = 4 V**
CE
h
FE*
min.
60
max.
320
Transition frequency
= 0.5 A; V
I
C
= 4 V
PNP
NPN
f
T
typ.
typ.
15
7.0
MHz
MHz
CE
** h
classification: B: 60-120 C: 100-200 D: 160-320
FE
* Pulse test
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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