NDL3325ST [CEL]
Laser Diode, 650nm;
| 型号： | NDL3325ST |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | Laser Diode, 650nm 光电 半导体 |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5 mW, 650 nm
VISIBLE LASER DIODE
HIGH OPERATING TEMPERATURE
NDL3325ST
NDL3325SU
FEATURES
OUTLINE DIMENSIONS (Units in mm)
•
•
•
•
•
•
•
OPTICAL OUTPUT POWER:
PO = 5.0 mW
X
0.4±0.1
110˚±1.5˚
LOW THRESHOLD CURRENT:
ITH = 40 mA TYP
1.0±0.15
LOW OPERATING CURRENT:
IOP = 50 mA TYP
Y
0.4±0.1
LOW OPERATING VOLTAGE:
VOP = 2.1 V TYP
Chip Location
+0
φ5.6
-0.025
|
|
|
X|, | Y| ≤ 0.08
Z| ≤ 0.1
θII |, | θ | ≤ 2˚
φ4.4
HIGH OPERATING TEMPERATURE:
TC = -20 to +80 ˚C
φ3.55
φ1.0
z
LD Chip
0.25
Kovar Glass
PEAK EMISSION WAVELENGTH:
λp = 650 nm TYP
1.27
2.3±0.3
0.75 MAX
FUNDAMENTAL TRANSVERSE MODE
1.2±0.1
6.5±0.5
3—φ0.45
NDL3325ST
NDL3325SU
3 (Case)
3 (Case)
DESCRIPTION
φ2.0±0.2
1
The NDL3325ST and NDL3325SU are AlGaInP 650 nm
visible laser diodes specially developed for DVD applications.
The newly developed Multiple Quantum Well (MQW) LD chip,
can achieve low operating current and high operating
temperature.
PD
LD
PD
LD
3
2
1
1
2
2
Pin Connections
1. PD Anode
2. LD Anode
1. PD Cathode
2. LD Anode
3. Case Ground
3. Case Ground
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25˚C)
PART NUMBER
NDL3325ST, NDL3325SU
SYMBOLS
PARAMETERS AND CONDITIONS
Operating Voltage, PO = 5.0 mW
UNITS
V
MIN
TYP
2.1
40
MAX
2.7
65
VOP
ITH
IOP
IM
Threshold Current, CW
mA
Operating Current, PO = 5.0 mW
mA
50
80
Monitor Current, VR = 5 V, PO = 5.0 mW
Peak Emission Wavelength, PO = 5.0 mW
Vertical Beam Angle, PO = 5.0 mW, FAHM1
Lateral Beam Angle, PO = 5.0 mW, FAHM1
mA
0.1
645
25
6
0.3
650
30
0.5
657
35
λp
nm
θ
deg.
deg.
θII
8
10
Note:
1. FAHM: Full Angle at Half Maximum.
California Eastern Laboratories
NDL3325ST, SU
ABSOLUTE MAXIMUM RATINGS1
RECOMMENDED
(TC = 25˚C, unless otherwise specified)
OPERATING CONDITIONS (TC = 25˚C)
SYMBOLS
PARAMETERS
UNITS RATINGS
SYMBOL
PARAMETER
UNIT MIN TYP MAX
PO
VR
Optical Output Power
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
mW
V
8.0
2.0
PO
Optical Output Power
mW 5.0
IF
mA
V
20
VR
30
TC
˚C
˚C
-20 to +80
-40 to +85
TSTG
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
CAUTION
Within this device there is GaAs (Gallium Arsenide) material which
is a harmful substance if ingested. Please do not break the
hermetic seal under any circumstances.
Warning on Handling
To prevent health hazards, avoid looking directly or through lenses
at beams from the operating laser diode.
Exceeding absolute maximum ratings’ value may cause destruction
or degradation of the device.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
02/28/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
相关型号：
©2020 ICPDF网 联系我们和版权申明