关闭背景特效

NE3210S01 [CEL]

SUPER LOW NOISE HJ FET; 超低噪声HJ FET

NE3210S01


元器件型号：	NE3210S01
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	SUPER LOW NOISE HJ FET 超低噪声HJ FET 晶体晶体管放大器
PDF文件：	总7页 (文件大小：415K)
下载文档：	下载PDF数据表文档文件
型号参数：NE3210S01参数

NE3210S01-T1

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

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100 NEC

NE3210S01-T1

SUPER LOW NOISE HJ FET

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59 CEL

NE3210S01-T1-A

TRANSISTOR,HEMT,N-CHAN,4V V(BR)DSS,15MA I(DSS),SOT-173X

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1 RENESAS

NE3210S01-T1B

SUPER LOW NOISE HJ FET

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90 CEL

NE3210S01-T1B

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

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192 NEC

NE32183A

TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 12MA I(DSS) | MICRO-X

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44 ETC

NE32184A

TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 12MA I(DSS) | MACRO-X

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26 ETC

NE32400

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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114 NEC

NE32400

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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31 NEC

NE32400

RF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-3

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0 NEC

NE32400_98

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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20 NEC

NE32400M

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-3

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0 NEC

NE32400M

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-3

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1 NEC

NE32400N

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-3

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0 NEC

NE32484A

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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25 NEC

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