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NE345L-10B [CEL]

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET;

NE345L-10B


元器件型号：	NE345L-10B
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 局域网放大器 CD 晶体管
PDF文件：	总2页 (文件大小：49K)
下载文档：	下载PDF数据表文档文件
型号参数：NE345L-10B参数

NE350184C

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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149 CEL

NE350184C-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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90 CEL

NE350184C-T1A

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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64 CEL

NE350184C-T1-A

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction FET, LEAD FREE, CERAMIC, 84C, MICRO-X-4

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0 NEC

NE350184C-T1-A

NE350184C-T1-A

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2 RENESAS

NE350184C-T1A-A

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction FET, LEAD FREE, CERAMIC, 84C, MICRO-X-4

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0 NEC

NE3503M04

NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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583 CEL

NE3503M04-A

NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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135 CEL

NE3503M04-A

NE3503M04-A

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1 RENESAS

NE3503M04-T2

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, SUPER MINIMOLD, M04, 4 PIN

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0 NEC

NE3503M04-T2

KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, SUPER MINIMOLD, M04, 4 PIN

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0 RENESAS

NE3503M04-T2-A

NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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135 CEL

NE3503M04-T2-A

NE3503M04-T2-A

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0 RENESAS

NE3503M04-T2B-A

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN

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0 NEC

NE3503M04-T2B-A

NE3503M04-T2B-A

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0 RENESAS

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