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元器件品牌
NE3509M04
[CEL]
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET; L到S波段低噪声放大器N沟道HJ -FET
元器件型号：
NE3509M04
生产厂家：
CALIFORNIA EASTERN LABS
描述和应用：
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
L到S波段低噪声放大器N沟道HJ -FET
晶体 放大器 晶体管 光电二极管
PDF文件：
总9页 (文件大小：279K)
下载文档：
下载PDF数据表文档文件
型号参数：NE3509M04参数
查看货源
NE3509M04_06
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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NE3509M04-A
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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NE3509M04-A
NE3509M04-A
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0
RENESAS
NE3509M04-A
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, MO-4, 4 PIN
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NEC
NE3509M04-T2
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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NE3509M04-T2
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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NE3509M04-T2-A
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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NE3509M04-T2-A
NE3509M04-T2-A
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0
RENESAS
NE3509M04-T2-A
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, MO-4, 4 PIN
Warning
: Undefined variable $rtag in
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0
NEC
NE3509M04-T2B-A
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
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: Undefined variable $rtag in
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0
NEC
NE3509M04-T2B-A
NE3509M04-T2B-A
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0
RENESAS
NE3509M14
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
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42
RENESAS
NE3510M04
HETERO JUNCTION FIELD EFFECT TRANSISTOR
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34
CEL
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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124
NEC
NE3510M04-A
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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50
CEL
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