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NE5500179A-T1 [CEL]

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS; 4.8 V工作电压硅射频功率MOSFET用于GSM1800和GSM1900发送放大器
NE5500179A-T1
元器件型号： NE5500179A-T1
生产厂家： CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用：

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
4.8 V工作电压硅射频功率MOSFET用于GSM1800和GSM1900发送放大器

晶体 放大器 晶体管 射频 GSM
PDF文件： 总5页 (文件大小：43K)
下载文档：  下载PDF数据表文档文件
型号参数：NE5500179A-T1参数
 查看货源

NE5500179A-T1-A

 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 5.70 X 5.70 MM, 1.10 MM HEIGHT, 79A, 4 PIN

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0 NEC

NE5500234

 Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD PACKAGE-3

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1 NEC

NE5500234-A

 RF & Microwave device

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0 RENESAS

NE5500234-AZ

 NE5500234-AZ

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1 RENESAS

NE5500234-AZ

 Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, POWER, MINIMOLD PACKAGE-3

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0 NEC

NE5500234-T1-AZ

 NE5500234-T1-AZ

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0 RENESAS

NE5500234-T1-AZ

 Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD PACKAGE-3

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0 NEC

NE5500434-A

 RF & Microwave device

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0 RENESAS

NE5500434-AZ

 NE5500434-AZ

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0 RENESAS

NE5500434-T1-AZ

 NE5500434-T1-AZ

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0 RENESAS

NE5500479A

 Discrete

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43 ETC

NE5500479A-T1

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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1 NEC

NE5500479A-T1-A

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5501N

 TRANSISTOR 0.5 A, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

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0 PHILIPS

NE5501N

 TRANSISTOR 0.5 A, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

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0 PHILIPS
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