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NE5510279A [CEL]

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS; 3.5 V工作电压硅射频功率MOSFET用于GSM1800发送放大器
NE5510279A
元器件型号： NE5510279A
生产厂家： CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用：

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
3.5 V工作电压硅射频功率MOSFET用于GSM1800发送放大器

晶体 放大器 晶体管 射频 GSM
PDF文件： 总5页 (文件大小：42K)
下载文档：  下载PDF数据表文档文件
型号参数：NE5510279A参数
 查看货源

NE5510279A-T1

 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

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59 NEC

NE5510279A-T1

 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

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27 CEL

NE5510279A-T1

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5510279A-T1-A

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5510379A-T1

 TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.5A I(D),BEAM LEAD

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0 RENESAS

NE5510K0+/-1%

 Fixed Resistor, Metal Film, 0.25W, 10000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

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0 VISHAY

NE5511279A

 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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48 CEL

NE5511279A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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77 NEC

NE5511279A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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43 NEC

NE5511279A-A

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5511279A-T1

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 NEC

NE5511279A-T1

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 CEL

NE5511279A-T1A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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12 NEC
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