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NE5511279A [CEL]

7.5 V UHF BAND RF POWER SILICON LD-MOS FET; 7.5 V UHF频段射频功率硅LD- MOS FET
NE5511279A
元器件型号： NE5511279A
生产厂家： CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用：

7.5 V UHF BAND RF POWER SILICON LD-MOS FET
7.5 V UHF频段射频功率硅LD- MOS FET

晶体 晶体管 射频 放大器
PDF文件： 总4页 (文件大小：293K)
下载文档：  下载PDF数据表文档文件
型号参数：NE5511279A参数
 查看货源

NE5511279A-A

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5511279A-T1

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 NEC

NE5511279A-T1

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 CEL

NE5511279A-T1A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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28 NEC

NE5511279A-T1A

 NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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12 NEC

NE5511279A-T1A

 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 CEL

NE5511279A-T1-A

 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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32 CEL

NE5511279A-T1A-A

 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 CEL

NE5511K0+/-.1%

 Fixed Resistor, Metal Film, 0.25W, 11000ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel

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0 VISHAY

NE5511K0+/-1%

 Fixed Resistor, Metal Film, 0.25W, 11000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

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-
0 VISHAY

NE5512

 Dual high-performance operational amplifier

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135 PHILIPS

NE5512D

 Dual high-performance operational amplifier

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45 PHILIPS

NE5512D

 IC DUAL OP-AMP, 5000 uV OFFSET-MAX, 3 MHz BAND WIDTH, PDSO8, 0.157 INCH, PLASTIC, SOP-8, Operational Amplifier

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0 PHILIPS

NE5512D-T

 IC DUAL OP-AMP, 5000 uV OFFSET-MAX, 3 MHz BAND WIDTH, PDSO8, 0.157 INCH, PLASTIC, SOP-8, Operational Amplifier

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-
0 PHILIPS
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