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元器件品牌
NE5520379A-T1A-A
[CEL]
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET; NEC的3.2V ， 3W ，L / S波段中功率硅LD- MOSFET
元器件型号：
NE5520379A-T1A-A
生产厂家：
CALIFORNIA EASTERN LABS
描述和应用：
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
NEC的3.2V ， 3W ，L / S波段中功率硅LD- MOSFET
PDF文件：
总9页 (文件大小：392K)
下载文档：
下载PDF数据表文档文件
型号参数：NE5520379A-T1A-A参数
查看货源
NE5521
LVDT signal conditioner
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156
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338
PHILIPS
NE5521D
LVDT signal conditioner
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156
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177
PHILIPS
NE5521D-T
LVDT Conditioner
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156
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136
ETC
NE5521F
IC SIGNAL CONDITIONER, CDIP18, CERDIP-18, Position Converter
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0
PHILIPS
NE5521N
LVDT signal conditioner
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167
PHILIPS
NE552R479A
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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67
CEL
NE552R479A-T1
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN
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0
RENESAS
NE552R479A-T1
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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0
NEC
NE552R479A-T1A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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0
NEC
NE552R479A-T1A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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0
NEC
NE552R479A-T1A-A
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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36
CEL
NE552R479A-T1A-A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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156
-
0
NEC
NE552R679A
Discrete
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35
ETC
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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22
NEC
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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25
NEC
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