关闭背景特效

NE650103M [CEL]

10 W L & S-BAND POWER GaAs MESFET; 10 W L ＆ S波段功率GaAs MESFET

NE650103M


元器件型号：	NE650103M
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	10 W L & S-BAND POWER GaAs MESFET 10 W L ＆ S波段功率GaAs MESFET 晶体晶体管 CD 局域网
PDF文件：	总7页 (文件大小：223K)
下载文档：	下载PDF数据表文档文件
型号参数：NE650103M参数

NE650103M-A

10 W L & S-BAND POWER GaAs MESFET

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32 CEL

NE6501077

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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38 NEC

NE6501077_00

L/S BAND MEDIUM POWER GaAs MESFET

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18 CEL

NE6501077-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 NEC

NE650N-A

Dolby Noise Reduction IC, PDIP16

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1 PHILIPS

NE650N-B

Dolby Noise Reduction IC, PDIP16

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0 PHILIPS

NE650NSIIA

Dolby Noise Reduction IC, PDIP16

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0 PHILIPS

NE650R279A

0.2 W L, S-BAND POWER GaAs MES FET

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36 NEC

NE650R279A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R279A-A

暂无描述

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0 NEC

NE650R279A-T1

0.2 W L, S-BAND POWER GaAs MES FET

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23 NEC

NE650R279A-T1-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R479A

0.4 W L, S-BAND POWER GaAs MES FET

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23 NEC

NE650R479A-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R479A-T1

0.4 W L, S-BAND POWER GaAs MES FET

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24 NEC

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