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NE900000 [CEL]

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET;

NE900000


元器件型号：	NE900000
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 开关晶体管
PDF文件：	总5页 (文件大小：200K)
下载文档：	下载PDF数据表文档文件
型号参数：NE900000参数

NE900000G

Ku-BAND MEDIUM POWER GaAs MESFET

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10 NEC

NE900000G

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE900075

Ku-BAND MEDIUM POWER GaAs MESFET

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13 NEC

NE900075

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE900089A

Ku-BAND MEDIUM POWER GaAs MESFET

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20 NEC

NE900089A

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE9001

Ku-BAND MEDIUM POWER GaAs MESFET

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10 NEC

NE900100

Ku-BAND MEDIUM POWER GaAs MESFET

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37 NEC

NE900100

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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2 CEL

NE900100G

Ku-BAND MEDIUM POWER GaAs MESFET

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17 NEC

NE900100G

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE900175

Ku-BAND MEDIUM POWER GaAs MESFET

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75 NEC

NE900175

KU BAND, GaAs, N-CHANNEL, RF POWER, FET

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0 RENESAS

NE900175

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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1 CEL

NE900176

RF SMALL SIGNAL, FET

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1 RENESAS

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