NEZ-4450-4D [CEL]
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN;
| 型号： | NEZ-4450-4D |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN |
| 文件： | 总5页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEZ4450-15D
NEZ4450-15DL
NEZ4450-8D
NEZ4450-8DL
NEZ4450-4D
NEZ4450-4DL
C-BAND INTERNALLY
MATCHED POWER GaAs MESFET
FEATURES
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
•
•
•
•
HIGH POUT
18 W (42.5 dBm) TYP P1dB for NEZ4450-15D/15DL
45
100%
-15D
-8D
-4D
9 W (39.5 dBm) TYP P1dB for NEZ4450-8D/8DL
4.5 W (36.5 dbm) TYP P1dB for NEZ4450-4D/4DL
80%
60%
40
35
POUT
HIGH EFFICIENCY
40% ηadd for 4.5W Device
38% ηadd for 9W Device
37% ηadd for 18W Device
LOW IMD
30
40%
-45 dBc IM3 @ 31.5 dBm Pout (S.C.L.) -15DL
-45 dBc IM3 @ 29 dBm Pout (S.C.L.) -8DL
-45 dBc IM3 @ 26 dBm Pout (S.C.L.) -4DL
25
20
20%
0%
Efficiency
32
SiO2 PASSIVATED CHIP
For Power/Gain Stability Under RF Overdrive
12
17
22
27
37
•
•
•
CLASS A OPERATION
INTERNALLY MATCHED (IN/OUT)
INDUSTRY COMPATIBLE HERMETIC PACKAGES
Input Power, PIN (dBm)
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
NEZ4450-4D
NEZ4450-4DL
T-61
NEZ4450-8D
NEZ4450-8DL
T-61
NEZ4450-15D
NEZ4450-15DL
T-65
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX TEST CONDITIONS
1
P1DB
Output Power at PIdB
ID = 0.8A, RF Off
ID = 1.6A,RF Off
ID = 4.0A, RF Off
dBm
dBm
dBm
35.5 36.5
VDS = 10V
f= 4.4
to 5.1 GHz
38.5 39.5
41.5 42.5
37
ηADD
IDS
Power Added Efficiency @ P1dB
Drain Current at P1dB
Linear Gain
3rd Order Intermodulation3
Distortion at
Pout = 26 dBm SCL2
Pout = 29 dBm SCL2
Pout = 31.5 dBm SCL2
%
A
40
1.1
38
2.2
Zs = ZL =
50 ohms
1.5
-42
3.0
4.4
6.0
GL
dB
9.5 10.5
9.5 10.5
9.0 10.0
IM3
-XDL
Option
Only
IDSQ = 0.5 x IDSS
VDS = I0V
f1 = 4.99GHz
f2 = 5.00 GHZ
2 Equal Tones
dBc
dBc
dBc
-45
-45 -42
-45 -42
9.2 14.0
IDSS
VP
Saturated Drain Current
VGS = 0 V
A
1.0 2.3
3.5 2.0
-0.5
4.5
7.0
4.0
Pinch Off Voltage
IDS = 15mA
IDS = 30mA
V
V
V
-3.5 -2.0
VDS = 2.5 V
-4.0 -2.0 -0.5
IDS = 60mA
-3.5 -2.2 -0.5
BVDGO
gm
Drain-Gate Breakdown Voltage
IDG = 15 mA
IDG = 30 mA
V
V
V
20
22
1300
5.0
20
22
IDG = 60 mA
20
22
Transconductance
IDS = IA
IDS = 2A
mS
mS
mS
2600
2.5
IDS = 4A
5200
1.3
RTH (CH-C)
Thermal Resistance
Channel to Case
Channel Temperature Rise4
°C/W
°C
6.0
48
3.0
48
1.5
60
∆T (CH-C)
Notes: 1. P1dB: Ouptut Power at the 1dB Gain Compression Point 2. S.C.L.: Single Carrier Level 3. Maximum Spec Applies to -XDL Option Only
4. ∆T (CH-C) = TCH -TC = 10 V x IDSQ X RTH (CH-C) MAX.
California Eastern Laboratories
NEZ4450-4D/4DL,-8D/8DL,-15D/15DL
TYPICAL PERFORMANCE CURVES (TC = 25°C)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-15D/DL)
INTERMODULATIONDISTORTION
vs. OUTPUT POWER
44
41
38
35
32
29
26
6.0
5.0
4.0
3.0
2.0
-20
-15DD
-8DD
-4DD
P
OUT
-30
-40
I
DS
-50
IM3
1.0
0.0
-60
-70
I
GS
23
20
-1.0
-2.0
IM5
-80
14
17
20
23
26
29
32
35
38
22
28
30
34
38
42
Input Power, PIN (dBm)
Total Output Power, POUT (dBm)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-8D/DL)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-4D/DL)
4.0
39
36
33
30
27
2.0
1.0
41
38
P
OUT
P
OUT
3.0
2.0
1.0
0.0
35
32
I
DS
I
DS
29
0.0
I
GS
I
GS
-1.0
-2.0
26
23
24
21
-1.0
16
19
22
25
28
31
34
14
17
20
23
26
29
32
Input Power, PIN (dBm)
Input Power, PIN (dBm)
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
NEZ4450-4D/4DL
NEZ-4450-8D/8DL
NE7-4450 -15D/15DL
VDS
VGSO
VGDO
IDS
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
V
V
15
-7
15
15
-7
-7
-18
V
-18
-18
A
IDSS
IDSS
IDSS
IGRF
Gate Current
mA
°C
°C
W
25
50
100
Tch
Channel Temperature
Storage Temperature
Total Power Dissipation
175
175
175
Tstg
PT
-65 to +175
2.5
-65 to +175
50
-65 to +175
100
Note:
1. Operation in excess of any of these parameters may result in permanent damage.
MAXIMUM OPERATING LIMITS
PART NUMBER
RG MAX1
IGRF MAX
mA
VDS MAX
V
Ω
NEZ-4450-4D/4DD
NEZ-4450-8D/8DD
NEZ-4450-15D/15DD
200
100
50
5
10
10
10
10
20
Note:
1. Rg MAX is the maximum recommended series resistance between the Gate Supply and the FET Gate.
NEZ4450-4D/4DL,-8D/8DL,-15D/15DL
TYPICAL PERFORMANCE CURVES (TC = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
110
100
Infinite Heat sink
90
80
-15D/-15DL
70
60
50
-8D/-8DL
40
30
-4D/-4DL
20
10
0
0
125
50
75
100
175 200
25
150
Case Temperature, TC (°C)
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE T-65
PACKAGE OUTLINE T-61
GATE SIDE
INDICATOR
DEPRESSION
0.5±0.1
0.5 ± 0.1
C 1.0, 4 PLACES SOURCE
GATE
C 1.5, 4 PLACES
GATE
2.4
R 1.2, 4 PLACES
2.4
5.6
17.4±0.2
SOURCE
12.9 ± 0.2
8.0±0.1
R 1.6, 2 PLACES
3.2
6.45 ± 0.05
2.5 MIN BOTH
LEADS
DRAIN
2.5 MIN BOTH
LEADS
DRAIN
20.4±0.2
17.0 ± 0.2
24.0±0.3
21.0 ± 0.3
+0.1
-0.05
+0.1
-0.05
16.0
10.7
0.1
0.1
5.0 MAX
5.0 MAX
2.4±0.2
1.6
2.6±0.2 1.6
16.0
0.2 MAX
12.0
0.2 MAX
NEZ4450-4D/DL, -8D/DL, -15D/DL
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS (TA = 25°C)
S
21
0.1 GHz
j50
+90
˚
+120
˚
+60
j100
j25
+30
+150
˚
S
12
S
11
j10
0.1 GHz
5.2 GHz
.08 .10
25
50
22
5.2 GHz
100
+180
˚
0
S
22
0.1
GHz
0
S
S
21
S
12
5.2 GHz
5.2 GHz
-j10
-30˚
-150
˚
S
11
-60˚
-j100
-j25
-120
˚
0.1 GHz
-90˚
-j50
NEZ4450-4D/4DD
VDS = 10.0 V, IDS = 800 mA
FREQUENCY
GHz
S11
S21
S12
S22
S21
(dB)
K
MAG1
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
.961
.964
.970
.971
.961
.949
.929
.907
.830
.773
.742
.711
.685
.680
.656
.632
.621
.625
.626
.632
.629
.626
.619
.606
-116.2
-149.8
177.3
150.5
125.8
102.0
74.2
11.641
6.618
2.841
1.555
1.187
1.079
1.138
1.410
1.937
2.221
2.383
2.579
2.684
2.874
3.000
3.114
3.252
3.360
3.452
3.484
3.471
3.493
3.482
3.458
114.8
94.4
62.2
.005
.007
.008
.008
.010
.012
.013
.015
.019
.020
.023
.025
.032
.042
.054
.057
.056
.055
.056
.057
.059
.063
.064
.068
24.8
24.1
5.1
.627
.654
.666
.675
.682
.699
.698
.689
.657
.628
.614
.595
.574
.551
.499
.456
.432
.417
.400
.389
.375
.368
.363
.359
179.2
175.7
164.4
147.8
128.3
107.2
83.6
57.8
25.8
9.8
0.9
0.29
0.49
0.6
21.3
16.4
99.1
3.8
1.5
0.7
1.1
3.0
5.7
6.9
7.5
8.2
8.6
9.2
9.5
9.9
10.2
10.5
10.8
10.8
10.8
10.9
10.8
10.8
33.7
29.8
25.5
20.8
16.6
15.4
14.4
15.1
13.8
13.4
13.3
13.4
13.2
13.8
13.4
13.1
13.1
13.3
13.5
13.6
13.5
13.4
13.2
13.0
22.4
-6.1
1.12
1.48
1.49
1.75
1.62
2.24
2.65
2.55
2.48
2.15
1.60
1.46
1.53
1.59
1.59
1.55
1.53
1.51
1.46
1.49
1.48
-16.3
-55.1
-96.0
-142.0
162.5
137.5
124.0
109.3
92.6
76.5
59.7
43.5
27.4
-22.0
-52.2
-91.6
-139.5
144.3
122.0
103.5
92.0
69.8
61.1
31.6
5.1
-14.4
-32.7
-47.9
-65.0
-79.0
-96.6
-114.0
-130.2
39.2
-8.9
-33.7
-47.7
-63.6
-81.3
-100.6
-122.2
-142.8
-162.6
177.7
158.7
140.2
122.5
105.6
88.9
-9.3
-21.1
-34.2
-46.0
-57.1
-67.1
-79.0
-91.9
-104.7
-117.6
-129.5
-140.1
-150.1
10.2
-8.0
-25.4
-43.5
-60.9
-78.3
-96.9
72.2
5.2
.591
54.0
3.463
-115.6
.070
-148.7
.357
-158.4
1.49
10.8
12.8
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11
|
2 - |S22
|
|S21
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11
,
S22 - S21 S12
|S21
|
|
(K ±
MSG =
, K =
MAG =
|S12
|
|S12
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NEZ4450-4D/DL, -8D/DL, -15D/DL
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90
˚
+120
˚
+60
j100
j25
S21
0.1 GHz
+30
.10
+150
˚
j10
S
0.1
GHz
12
S
22
S
0.1
GHz
22
5.2 GHz
50
.08
.06
+180
˚
0
100
11
5.2 GHz
0
S
S21
5.2 GHz
S
12
5.2 GHz
-j10
-30˚
-150
˚
S11
0.1 GHz
-60˚
-120
˚
-j100
-j25
-90˚
-j50
NEZ4450-8D/8DD
VDS = 10.0 V, IDS = 1600 mA
FREQUENCY
(GHz)
S11
S21
S12
S22
K
S21
MAG1
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
.962
.977
.985
.984
.978
.967
.949
.935
.865
.799
.761
.720
.668
.633
.572
.505
.454
.421
.393
.381
.373
.371
.374
.380
-147.3
-167.8
169.6
146.7
122.9
100.2
73.7
7.146
3.743
1.576
0.894
0.715
0.696
0.792
1.062
1.601
1.918
2.116
2.349
2.545
2.824
3.036
3.239
3.462
3.610
3.719
3.731
3.637
3.561
3.438
3.296
101.1
87.9
63.7
30.4
-4.6
.002
.004
.005
.008
.011
.013
.016
.018
.022
.022
.025
.028
.035
.045
.050
.051
.051
.052
.054
.056
.059
.062
.063
.064
14.6
24.1
25.3
20.9
1.7
.776
.802
.804
.793
.771
.748
.702
.642
.559
.521
.505
.487
.480
.474
.438
.406
.389
.380
.371
.365
.356
.348
.337
.321
176.8
173.6
162.0
144.4
124.1
102.8
79.1
53.7
22.8
7.2
-1.5
-12.4
-25.4
-40.1
-56.5
-71.7
-87.5
-104.9
-124.2
-142.9
-162.0
-179.6
163.3
146.6
0.10
0.77
1.04
1.22
1.39
1.60
1.80
1.48
2.00
2.74
2.65
2.54
2.23
1.71
1.77
1.90
1.93
1.89
1.82
1.78
1.75
1.71
1.75
1.81
17.1
11.5
4.0
-1.0
-3.0
-3.1
-2.0
0.5
4.1
5.7
6.5
7.4
35.5
29.7
23.8
17.6
14.4
12.7
11.8
13.6
12.9
12.2
12.2
12.4
12.4
13.1
12.7
12.6
12.8
13.0
13.1
13.1
12.9
12.7
12.3
12.0
-40.2
-78.7
-25.8
-55.9
41.3
-2.0
-123.3
-178.3
156.5
143.0
128.0
110.5
93.5
75.7
57.6
39.2
19.8
-101.6
-161.5
169.5
150.0
133.9
107.0
88.4
51.6
25.1
4.9
-14.9
-33.3
-54.6
-73.6
-93.7
-112.0
-130.0
-24.4
-36.6
-50.9
-67.1
-86.2
-109.4
-133.6
-159.8
171.2
140.4
110.2
80.4
8.1
9.0
9.6
10.2
10.8
11.1
11.4
11.4
11.2
11.0
10.7
10.4
-1.1
-20.8
-40.5
-60.2
-78.2
-96.7
52.8
26.4
1.3
5.2
.396
-23.5
3.194
-115.0
.067
-149.2
.295
129.6
1.79
10.1
11.6
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11
|
2 - |S22
|
|S21
|S12
|
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|S12
|
|
(
K ±
MAG =
MSG =
, K =
,
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
10/16/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
相关型号：
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