NEZ6472-15D [CEL]
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN;
| 型号： | NEZ6472-15D |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN 局域网 放大器 CD 晶体管 |
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEZ6472-15D
NEZ6472-15DL
NEZ6472-8D
NEZ6472-8DL
NEZ6472-4D
NEZ6472-4DL
C-BAND INTERNALLY
MATCHED POWER GaAs MESFET
FEATURES
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
•
•
•
•
HIGH POUT
18W (42.5 dBm) Typ P1dB for NEZ6472-15D/15DL
100%
45
40
-15D
-8D
-4D
9W (39.5 dBm) Typ P1dB for NEZ6472-8D/8DL
4.5W (36.5 dbm) Typ P1dB for NEZ6472-4D/4DL
80%
60%
40%
HIGH EFFICIENCY
P
OUT
35% ηADD for 4.5W Device
33% ηADD for 9W Device
32% ηADD for 18W Device
35
30
Efficiency
LOW IMD
-45 dBc IM3 @ 31.5 dBm POUT (SCL) -15DL
-45 dBc IM3 @ 29 dBm POUT (SCL) -8DL
-45 dBc IM3 @ 26 dBm POUT (SCL) -4DL
20%
0%
25
20
SiO2 PASSIVATED CHIP
For Power/Gain Stability Under RF Overdrive
CLASS A OPERATION
12
17
22
27
32
37
•
•
•
•
INTERNALLY MATCHED (IN/OUT)
Input Power, PIN (dBm)
SUPERIOR GAIN FLATNESS
INDUSTRY COMPATIBLE HERMETIC PACKAGES
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
NEZ6472-4D
NEZ6472-4DL
T-61
NEZ6472-8D
NEZ6472-8DL
T-61
NEZ6472-15D
NEZ6472-15DL
T-65
PACKAGE OUTLINE
SYMBOLS PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX TEST CONDITIONS
1
P1dB
Output Power at PIdB
IDSQ = 0.8A, (RF Off)
IDSQ = 1.6A
dBm 35.5 36.5
dBm
dBm
VDS = 10V
f = 6.4
to 7.2 GHz
38.5 39.5
IDSQ = 4.0A
41.5 42.5
32
ηADD
IDS
GL
IM3
-XDL
Option
Only
IDSS
VP
Power Added Efficiency @ P1dB
%
A
35
1.1
33
Zs = ZL
Drain Current at P1dB
Linear Gain
3rd Order Intermodulation Distortion3 at
Pout = 26 dBm SCL2, IDSQ = 0.5 x IDSS
Pout = 29 dBm SCL2, IDSQ = 0.5 x IDSS
1.5
-42
2.2
3.0
4.4 6.0
8.0
50 ohms
dB
8.0 9.0
7.5
8.5
7.0
VDS = I0V
dBc
dBc
-45
f1 = 7.19 GHz
f2 = 7.20 GHZ
2 Equal Tones
-45
4.5
-42
7.0
Pout = 31.5 dBm SCL2, IDSQ = 0.5 x IDSS dBc
-45 -42
9.2 14.0
Saturated Drain Current, VGS = 0 V
Pinch Off Voltage
IDS = 15 mA
A
1.0 2.3
3.5 2.0
4.0
V
V
V
-3.5 -2.0 -0.5
VDS = 2.5 V
IDS = 30 mA
IDS = 60 mA
-3.5 -2.0 -0.5
-3.5 -2.2 -0.5
BVDGO
gm
Drain - Gate Breakdown Voltage
IDG = 15 mA
IDG = 30 mA
IDG = 60 mA
Transconductance
IDS = I A
V
V
V
20
22
20
22
20
22
mS
mS
mS
1300
5.0
IDS = 2 A
IDS = 4 A
2600
2.5
5200
1.3 1.5
RTH(CH-C) Thermal Resistance (Channel to Case) °C/W
Channel Temperature Rise4
°C
6.0
48
3.0
48
∆T(CH-C)
60
Notes:
3. Maximum Spec Applies to -XDL Option Only.
4. ∆T(CH-C) = TCH - TC = 10 V x IDSQ x RTH (CH-C) MAX.
1. P1dB: Ouptut Power at the 1dB Gain Compression Point.
2. SCL: Single Carrier Level.
California Eastern Laboratories
NEZ6472-4D/4DL,-8D/8DL,-15D/15DL
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
NEZ6472-4D/4DL
NEZ6472-8D/8DL
NEZ6472-15D/15DL
VDS
VGS
VGD
IDS
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
V
V
15
-12
15
-12
15
-12
V
-18
-18
-18
A
IDSS
IDSS
IDSS
IGRF
TCH
TSTG
Gate Current
mA
°C
°C
W
25
50
100
Channel Temperature
Storage Temperature
Total Power Dissipation
175
175
175
-65 to +175
25
-65 to +175
50
-65 to +175
100
PT
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
MAXIMUM OPERATING LIMITS
PART NUMBER
Rg MAX1
IGRF MAX
mA
VDS MAX
V
Ω
NEZ6472-4D/4DL
NEZ6472-8D/8DL
NEZ6472-15D/15DL
Note:
200
100
50
5
10
10
10
10
20
1. Rg MAX is the maximum recommended series resistance
between the Gate Supply and the FET Gate.
TYPICAL PERFORMANCE CURVES (TC = 25°C)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER
(-15D/DL)
INTERMODULATION DISTORTION
vs. OUTPUT POWER
6.0
-20
44
41
38
POUT
-15DL
5.0
4.0
-8DL
-30
-4DL
-40
3.0
2.0
1.0
0.0
35
32
29
26
IDS
-50
IM
3
-60
I
GS
-70
-80
23
20
1.0
2.0
IM
5
22
26
30
34
38
42
14
17
20
23
26
29
32
35
38
Total Output Power, POUT (dBm)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-8D/DL)
Input Power, PIN (dBm)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-4D/DL)
4.0
41
39
36
33
30
27
2.0
1.0
POUT
3.0
36
P
OUT
I
DS
35
32
29
2.0
1.0
0.0
I
DS
0.0
1.0
I
GS
I
GS
24
21
-1.0
-2.0
26
23
16
19
22
25
28
31
34
14
17
20
23
26
29
32
Input Power, PIN (dBm)
Input Power, PIN (dBm)
NEZ6472-4D/4DL, -8D/8DL, -15D/15DL
TYPICAL PERFORMANCE CURVES (TC = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
110
100
Infinite Heat sink
90
80
-15D/-15DL
70
60
50
-8D/-8DL
40
30
-4D/-4DL
20
10
0
0
125
50
75
100
175 200
25
150
Case Temperature, TC (°C)
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE T-65
PACKAGE OUTLINE T-61
GATE SIDE
0.5±0.1
INDICATOR
DEPRESSION
C 1.0, 4 PLACES SOURCE
0.5 ± 0.1
GATE
C 1.5, 4 PLACES
GATE
2.4
R 1.2, 4 PLACES
2.4
5.6
17.4±0.2
SOURCE
12.9 ± 0.2
8.0±0.1
R 1.6, 2 PLACES
3.2
6.45 ± 0.05
2.5 MIN BOTH
LEADS
DRAIN
2.5 MIN BOTH
LEADS
DRAIN
20.4±0.2
17.0 ± 0.2
24.0±0.3
21.0 ± 0.3
+0.1
-0.05
10.7
0.1
+0.1
-0.05
16.0
0.1
5.0 MAX
5.0 MAX
2.6±0.2 1.6
2.4±0.2
1.6
12.0
0.2 MAX
16.0
0.2 MAX
NEZ6472-4D/DL, -8D/DL, -15D/DL
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS (TC = 25°C)
S21
0.1 GHz
90˚
j50
120˚
60˚
j100
j25
S
12
150˚
30˚
0.1 GHz
S
22
j10
0
7.4 GHz
S
12
180˚
.6
.8 .10
0˚
10
22
25
50 100
11
0
7.4 GHz
S
S
S
21
0.1 GHz
7.4 GHz
4
6
8
7.4 GHz
-j10
-150˚
-30˚
S
11
-j100
-j25
0.1 GHz
-j50
-120˚
S
21
10
-60˚
-90˚
NEZ6472-4D/4DL
VDS = 10.0 V, IDS = 800 mA
FREQUENCY
GHz
S11
S21
S12
S22
S21
K
MAG1
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5.8
6.0
6.2
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
0.942
0.958
0.963
0.968
0.960
0.955
0.952
0.949
0.939
0.930
0.872
0.749
0.590
0.553
0.528
0.562
0.600
0.613
0.617
0.604
0.580
0.552
0.506
0.470
0.404
-103.4
13.187
7.998
3.473
1.846
1.294
1.050
0.982
0.914
0.981
1.047
1.262
1.547
2.027
2.389
2.631
2.849
3.002
3.061
3.134
3.189
3.195
3.245
3.167
3.236
3.152
121.3
100.9
71.0
37.5
6.3
-23.5
-52.9
-82.4
-115.0
-147.7
174.5
134.8
88.7
0.008
0.008
0.009
0.010
0.010
0.011
0.012
0.013
0.016
0.020
0.019
0.024
0.042
0.056
0.065
0.072
0.080
0.083
0.087
0.092
0.095
0.101
0.103
0.107
0.106
62.3
16.7
-0.6
0.625
0.677
0.691
0.701
0.709
0.726
0.737
0.748
0.752
0.756
0.759
0.728
0.645
0.548
0.484
0.395
0.305
0.265
0.234
0.218
0.204
0.211
0.224
0.240
0.244
179.6
177.2
166.6
151.7
134.5
118.8
101.7
84.7
66.6
48.6
28.0
5.8
-21.3
-44.2
-59.5
-78.7
-102.6
-117.9
-135.4
-154.9
-178.2
159.7
139.5
117.8
102.2
0.55
0.28
0.52
0.73
1.31
1.49
1.36
1.27
0.89
0.69
1.69
2.59
2.28
1.89
1.70
1.51
1.31
1.24
1.17
1.13
1.14
1.10
1.16
1.14
1.26
22.4
18.0
10.8
5.3
2.2
0.4
-0.1
-0.7
-0.1
0.3
2.0
3.7
6.1
7.5
8.4
9.0
9.5
9.7
9.9
32.1
29.9
25.8
22.6
17.7
15.6
15.5
15.3
17.7
17.1
13.3
11.1
10.4
10.8
11.1
11.7
12.3
12.6
13.0
13.1
12.9
13.0
12.3
12.4
11.6
-141.0
-177.8
155.5
133.3
113.5
92.5
71.5
47.7
23.9
-3.2
-35.9
-87.0
-135.4
-167.7
158.3
126.3
112.6
98.8
86.3
73.1
60.7
49.0
-12.2
-25.4
-41.3
-63.4
-85.6
-117.0
-148.4
161.2
127.1
71.5
55.7
33.8
9.7
33.2
7.7
-20.1
-46.7
-59.1
-71.9
-83.9
-97.7
-110.3
-123.7
-138.5
-150.7
-16.1
-28.6
-41.7
-54.2
-67.9
-81.2
-94.1
-108.6
-121.6
10.0
10.0
10.2
10.0
10.2
9.9
33.6
19.3
7.4
0.271
-17.1
3.068
-147.9
0.110
-175.1
0.248
76.6
1.39
9.7
10.7
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11
|
2 - |S22
|
|S21
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11
,
S
22 - S21
S
12
|S21
|S12
|
|
(K ±
MAG =
MSG =
, K =
|S12
|
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NEZ6472-4D/DL, -8D/DL, -15D/DL
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS (TC = 25°C)
S21
0.1 GHz
j50
90˚
120˚
60˚
j100
j25
S
12
150˚
30˚
0.1 GHz
j10
0
S22
7.4 GHz
S
12
7.4 GHz
180˚
10
22
50
0
.1 .15
.2 .25
0˚
S11
S
7.4 GHz
S21
0.1 GHz
7.4 GHz
-j10
3
4
5
-150˚
-30˚
S
11
0.1 GHz
-j100
-j25
-120˚
S21
-60˚
-j50
-90˚
NEZ6472-8D/8DL
VDS = 10.0 V, IDS = 1600 mA
FREQUENCY
(GHz)
S11
S21
S12
S22
K
S21
MAG1
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5.8
6.0
6.2
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.4
0.971
0.975
0.981
0.985
0.978
0.973
0.962
0.972
0.984
0.973
0.955
0.862
0.720
0.606
0.532
0.477
0.464
0.472
0.486
0.491
0.488
0.475
0.442
0.420
0.364
0.247
-136.9
-161.5
174.4
153.4
133.4
115.9
98.3
79.4
59.3
38.6
16.7
8.298
4.465
1.859
0.991
0.703
0.579
0.520
0.516
0.547
0.615
0.764
0.965
1.344
1.700
2.010
2.353
2.702
2.837
2.988
3.102
3.150
3.213
3.111
3.135
3.012
2.834
106.7
92.4
69.8
41.4
13.5
-13.1
-39.2
-66.4
-95.1
-126.0
-160.9
162.4
120.6
90.8
68.4
43.6
15.3
0.8
-14.6
-29.8
-46.3
-62.6
-78.6
-95.5
-110.8
-141.5
0.004
0.005
0.005
0.007
0.008
0.010
0.011
0.012
0.014
0.019
0.015
0.020
0.030
0.037
0.047
0.057
0.070
0.076
0.082
0.088
0.093
0.100
0.103
0.105
0.104
0.106
20.4
18.2
9.8
8.5
0.8
-13.9
-33.9
-50.9
-72.0
-104.8
-144.0
-175.3
120.1
80.1
0.801
0.830
0.834
0.835
0.833
0.838
0.833
0.837
0.837
0.828
0.846
0.819
0.754
0.692
0.631
0.540
0.421
0.352
177.0
175.1
165.6
151.2
136.2
121.7
106.5
90.6
74.6
58.0
39.9
20.8
0.284
0.454
0.757
0.870
1.394
1.449
1.888
1.096
0.200
0.044
0.289
1.564
2.473
2.720
2.418
2.186
1.842
1.705
1.555
1.430
1.356
1.255
1.272
1.229
1.337
1.509
18.3
12.9
5.3
33.1
29.5
25.7
21.5
15.7
13.6
11.3
14.4
15.9
15.1
17.0
12.4
9.7
-0.0
-3.0
-4.7
-5.6
-5.7
-5.2
-4.2
-2.3
-0.3
2.5
4.6
6.0
7.4
8.6
9.0
9.5
9.8
9.9
-8.2
-42.1
-72.7
-101.1
-137.8
177.9
156.9
136.3
118.0
99.4
82.3
67.0
49.1
33.2
-0.4
-17.2
-31.4
-48.7
-71.0
-85.5
9.4
9.6
9.9
54.0
22.0
-10.4
-25.8
-43.1
-58.6
-76.0
-91.9
-108.9
-126.6
-141.4
-171.1
10.5
10.8
11.2
11.5
11.7
12.0
11.6
11.8
11.1
10.0
0.287 -103.1
0.236
0.196
0.195
0.223
0.262
0.280
0.294
-125.7
-156.8
168.9
139.5
112.6
94.7
10.1
9.8
9.9
9.5
9.0
-5.5
70.1
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11 2 - |S22
| |
|S21
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|S12
|
|
(K ±
MAG =
MSG =
, K =
,
|S12
|
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
10/16/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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