NEZ7785-4DD [CEL]
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET;
| 型号： | NEZ7785-4DD |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 局域网 放大器 CD 晶体管 |
| 文件： | 总6页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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NEZ7785-4DL
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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5
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NEZ7785-8D
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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15
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NEZ7785-8D
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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4
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NEZ7785-8DD
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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39
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NEZ7785-8DL
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3
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NEZ7785-8DL
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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3
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NEZB104Z55V135X75F
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NEZB105Z55V215X8F
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1
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0
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NEZB473Z55V135X75F
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0
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NEZB474Z55V215X8F
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NEZBN
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2
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NEZBN105Z55V215X8F
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1
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NEZBN224Z55V135X75F
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1
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NEZBN334Z55V135X75F
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1
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NEZBN473Z55V135X75F
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NEZBN474Z55V215X8F
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NEZH104Z55V135X95F
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1
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NEZH105Z55V215X95F
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1
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