NX6301 [CEL]
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS; 1310纳米的InGaAsP多量子阱DFB激光二极管，可以包155兆/ s和622 Mb / s的应用
| 型号： | NX6301 |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEC's 1310 nm InGaAsP MQW DFB
LASER DIODE IN CAN PACKAGE
FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
NX6301
SERIES
DESCRIPTION
FEATURES
• OPTICAL OUTPUT POWER:
PO = 5.0 mW
• LOW THRESHOLD CURRENT:
ITH = 13 mA
• HIGH SPEED:
tr, tf = 0.5 ns MAX
NEC's NX6301 Series is a 1310 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD. This device is ideal for Synchro-
nous Digital Hierarchy (SDH) and SONET systems, STM-1/
OC-3, STM-4/OC-12 and ITU-T recommendations.
• SMSR:
40 dB
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• BASED ON TELCORDIA RELIABILITY
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PART NUMBER
NX6301 Series
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
VOP
ITH
Operating Voltage, PO = 5.0 mW, TC = -40 to +85°C
V
–
1.2
1.5
Threshold Current
mA
mA
–
–
13
40
25
50
TC = 85°C
PTH
ηd
Threshold Output Power, TC = -40 to +85°C, IF = ITH
µW
W/A
dB
–
–
200
–
Differential Efficiency
0.15
-3.0
0.25
-2.3
ηd (@ 85°C)
ηd (@ 25°C)
∆ηd
Temperature Dependence
of Differential Efficiency
–
∆ηd = 10 log
λp
SMSR
θ⊥
Peak Emission Wavelength,
PO = 5.0 mW, TC = -40 to +85°C, RMS (-20 dB)
nm
dB
1280
30
–
1335
–
Side mode Suppression Ratio
PO = 5.0 mW, TC = -40 to +85°C
40
Vertical Beam Angle1,
PO = 5.0 mW, FAHM2
deg
deg
ns
–
–
30
25
40
35
θ||
tr
Lateral Beam Angle1, PO = 5.0 mW, FAHM2
Rise Time, 10 to 90%
–
0.05
0.3
0.5
tf
Fall Time, 90 to 10%
ns
–
0.5
Im
ID
Monitor Current, PO = 5.0 mW, VR = 5 V
µA
200
600
1000
Monitor Dark Current,
VR = 5 V
nA
nA
–
–
0.1
–
50
500
VR = 5 V, TC = -40 to +85°C
Ct
Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz
pF
dB
–
1.0
–
20
γ
Tracking Error3 Im = const, (@ PO = 5.0 mW, TC = 25°C)
TC = -40 to +85°C
-1.0
1.0
Notes:
1. Applicable only to NX6301S Series.
2. FAHM: Full Angle at Half Maximum.
PO
3. Tracking Error: γ
(mW)
P
5.0
O
γ =
|10 log
|
[dB]
TC = 25°C
5.0
TC = -40 to +85°C
P
O
I
m
0
Im
(mA)
California Eastern Laboratories
NX6301 SERIES
ABSOLUTE MAXIMUM RATINGS1
(TC = 25°C, unless otherwise specified)
SYMBOLS
PARAMETERS
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
UNITS RATINGS
Pf
IF
mW
mA
V
10
150
VR
2.0
IF
mA
V
10
VR
20
TC
°C
°C
-40 to +85
-40 to +85
TSTG
TSLD
Lead Soldering
Temperature (10 s)
°C
350 (3 sec.)
85
RH
Relative Humidity
(noncondensing)
%
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TC = -40 to +85°C)
OPERATING CURRENT AND THRESHOLD CURRENT
vs. CASE TEMPERATURE
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
10
100
8
6
I
OP @ PO = 5 mW
I
th
10
4
2
1
-60 -40
0
20
40
60
80
100
-20
0
20
40
60
80 100
Forward Current, IF (mA)
Case Temperature, TC (°C)
TEMPERATURE DEPENDENCE OF
PEAK EMISSION WAVELENGTH
1320
1315
1310
1305
1300
-60 -40
-20
0
20
40
60
80 100
Case Temperature, TC (°C)
NX6301 SERIES
TYPICAL PERFORMANCE CURVES (TC = -40 to +85°C)
T
FAR FIELD PATTERN (θ )
FAR FIELD PATTERN (θ//)
(NX6301S SERIES ONLY)
(NX6301S SERIES ONLY)
100
100
50
50
0
-60
0
-60
60
0
60
0
T
Lateral Beam Angle θ// (deg.)
Vertical Beam Angle θ (deg.)
FORWARD CURRENT vs.
FORWARD VOLTAGE
SPECTRUM
-10
50
40
-30
-50
30
20
-70
-90
10
0
1287
1312
1337
0
0.5
1.0
1.5
2.0
2.5
Wavelength, λ (nm)
Forward Voltage, VF (V)
Note: The graphs indicate nominal characteristics.
NX6301 SERIES
OUTLINE DIMENSIONS (Units in mm)
NX6301S SERIES
NX6301G SERIES
+0.00
ø5.6
+0.00
-0.03
-0.03
ø5.6
ø4.3±0.1
ø4.2±0.1
ø3.55±0.05
BOTTOM VIEW
BOTTOM VIEW
+0.1
-0.0
ø3.75±0.05
1.0±0.1
0.3
1.0±0.1
1
1
+0.1
-0.0
2
4
0.3
+0.1
2
4
0.3
-0.0
3
3
110°±2°
PIN CONNECTIONS
PIN CONNECTIONS
+0.1
-0.0
NX6301GH
NX6301GI
0.3
NX6301SH
NX6301SI
1 (CASE)
1 (CASE)
1 (CASE)
LD
1 (CASE)
LD
Focal Point
LD
LD
ø1.6±0.1
4
2
4
2
4
ø1.0 MIN
2
4
2
PD
PD
3
3
PD
PD
NX6301SJ
NX6301SK
3
3
LD CHIP
REFERENCE
NX6301GK
1 (CASE)
LD
NX6301GJ
1.2±0.1
PLANE
1 (CASE)
1.27±0.1
1 (CASE)
LD
1 (CASE)
LD
ø0.45
(four places)
2
2
LD
ø0.45
(4 places)
4
4
2
2
PD
PD
4
4
3
3
PD
PD
3
ø2.0
P. C. D .
ø2.0
P.C.D.
3
*n = 1.48 Bolosilicate Glass
ORDERING INFORMATION
PART NUMBER
PACKAGE
NX6301SH
NX6301SI
NX6301SJ
NX6301SK
NX6301GH
NX6301GI
NX6301GJ
NX6301GK
4-pin CAN with flat glass cap
4-pin with aspherical lens cap
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL
for all damages resulting from such improper use or sale.
02/19/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
相关型号：
NX6301GH
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6301GI
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6301GJ
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6301GK
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6301SH
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6301SI
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6301SJ
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6301SK
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
CEL
NX6306
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
CEL
©2020 ICPDF网 联系我们和版权申明