NX6406 [CEL]
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS; NEC的1490纳米的InGaAsP MQW - DFB激光二极管在CAN包的FTTH PON应用
| 型号： | NX6406 |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS |
| 文件： | 总5页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NECʼs 1490 nm InGaAsP MQW-DFB
LASER DIODE IN CAN PACKAGE
FOR FTTH PON APPLICATIONS
NX6406 SERIES
FEATURES
• OPTICAL OUTPUT POWER:
PO = 5.0 mW
• LOW THRESHOLD CURRENT :
ITH = 10 mA
• DIFFERENTIAL EFFICIENCY:
ηd = 0.3 W/A
• WIDE OPERATING TEMPERATURE RANGE:
TC = -20 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
7.5 mm
DESCRIPTION
NECʼs NX6406 Series is a 1 490 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
APPLICATION
• FTTH PON (Fiber To The Home Passive Optical Network)
California Eastern Laboratories
NX6406 SERIES
PACKAGE DIMENSIONS (Units in mm)
5.6+0.00
φ
-0.03
φ
4.3±0.1
φ
3.75±0.05
1.0±0.1
BOTTOM VIEW
1
2
4
3
+0.1
-0.0
0.3
Focal Point
PIN CONNECTIONS
NX6406GH
NX6406GK
1 (CASE)
1 (CASE)
LD
LD
2
4
2
4
PD
PD
φ
4– 0.45
3
3
φ
2.0
P.C.D
NX6406 SERIES
ORDERING INFORMATION
PART NUMBER
PACKAGE
4-pin CAN with aspherical lens cap
PIN CONNECTIONS
1
NX6406GH-AZ*
LD
4
2
PD
3
1
NX6406GK-AZ*
LD
2
4
PD
3
Remark The hermetic test will be performed as AQL 1.0%.
*NOTE:
Please refer to the last page of this data sheet, “Compliance with EU Directives” for Pb-Free RoHS Compliance Infomation.
NX6406 SERIES
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Optical Output Power
SYMBOL
RATINGS
10
UNIT
mW
mA
V
Po
IF
Forward Current of LD
150
Reverse Voltage of LD
VR
IF
2.0
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
2.0
mA
V
VR
TC
15
−20 to +85
−40 to +85
150 (15 Hr)
350 (3 sec.)
85
°C
Tstg
Tasb
Tsld
RH
°C
Assembly Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
°C
°C
%
ELECTRO-OPTICAL CHARACTERISTICS (TC = -25°C to +85°C, unless otherwise specified)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Optical Output Power
Po
CW
5.0
mW
Operating Voltage
Threshold Current
Vop
Ith
Po = 5.0 mW
1.1
10
1.6
20
50
V
TC = 25°C
mA
ηd
Differential Efficiency
Po = 5.0 mW, TC = 25°C
0.18
0.10
−3.0
0.3
W/A
dB
Po = 5.0 mW
Δηd
Temperature Dependence of
Differential Efficiency
−1.6
ηd (@85ºC)
Δηd = 10 log
ηd (@25ºC)
λp
Peak Emission Wavelength
Side Mode Suppression Ratio
Rise Time
CW, Po = 5.0 mW
Po = 5.0 mW
1 480
30
1 500
nm
dB
ps
SMSR
40
tr
tf
Ib = Ith, 20-80%
Ib = Ith, 80-20%
100
150
Fall Time
ps
Monitor Current
Im
ID
VR = 1.5 V, Po = 5.0 mW
200
600
0.1
2 000
10
μA
Monitor Dark Current
VR = 1.5 V, TC = 25°C
nA
VR = 1.5 V
10
100
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/27/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
Mercury
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Not Detected
(*)
Not Detected
Cadmium
Hexavalent Chromium
PBB
Not Detected
Not Detected
Not Detected
Not Detected
PBDE
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
相关型号：
NX6414EH
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
RENESAS
©2020 ICPDF网 联系我们和版权申明