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NX7561JB-BC [CEL]

NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN); NEC的1550纳米的InGaAsP多量子阱FP脉冲激光二极管DIP封装用于OTDR应用（ 135毫瓦MIN ）
NX7561JB-BC
元器件型号： NX7561JB-BC
生产厂家： CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用：

NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)
NEC的1550纳米的InGaAsP多量子阱FP脉冲激光二极管DIP封装用于OTDR应用（ 135毫瓦MIN ）

二极管 激光二极管 脉冲
PDF文件： 总4页 (文件大小：181K)
下载文档：  下载PDF数据表文档文件
型号参数：NX7561JB-BC参数
 查看货源

NX7561JB-BC-AZ

 NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)

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14 CEL

NX7563JB-BC

 InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

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9 CEL

NX7563JB-BC

 LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

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9 RENESAS

NX7563JB-BC-AZ

 InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

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22 CEL

NX7637BF-AA

 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

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17 RENESAS

NX7639BB-AA

 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

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4 RENESAS

NX7660JC

 InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

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16 NEC

NX7660JC

 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

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16 NEC

NX7660JC

 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

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10 NEC

NX7660JC-BA

 InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

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25 NEC

NX7660JC-CA

 InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

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11 NEC

NX7661JB

 LASER DIODE,1.625UM PEAK WAVELENGTH,MODULE C

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0 RENESAS

NX7661JB-BC

 NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)

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21 CEL

NX7661JB-BC-AZ

 NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)

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16 CEL

NX7663JB-BC

 InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

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10 CEL
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