PS2513L-1-F3-A [CEL]
HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES;![PS2513L-1-F3-A](http://pdffile.icpdf.com/pdf2/p00326/img/icpdf/PS2513L-1-V_2006370_icpdf.jpg)
型号: | PS2513L-1-F3-A |
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描述: | HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES 分离技术 隔离技术 开关 |
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PHOTOCOUPLER
PS2513-1,PS2513L-1
HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE
−NEPOC Series−
PHOTOCOUPLER SERIES
DESCRIPTION
The PS2513-1 and PS2513L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor.
The PS2513-1 is in a plastic DIP (Dual In-line Package) and the PS2513L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
•
•
•
•
High isolation voltage (BV = 5 000 Vr.m.s.)
High collector to emitter voltage (VCEO = 120 V)
Guaranteed maximum switching speed (toff ≤ 60 μs @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ)
High-speed switching (ton = 5 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ)
(toff = 25 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ)
Ordering number of tape product: PS2513L-1-E3, E4, F3, F4
Safety standards
•
•
•
•
UL approved: File No. E72422
DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
•
•
•
Power supply
Air conditioner
FA equipment
Document No. PN10163EJ03V0DS (3rd edition)
Date Published March 2006 CP(K)
The mark shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 2002, 2006
PS2513-1,PS2513L-1
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2513-1
TOP VIEW
4.6±0.35
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
7.62
0 to 15˚ +0.1
0.25–0.05
1.25±0.15
0.50±0.10
0.25
M
2.54
Lead Bneding Type
PS2513L-1
TOP VIEW
4
3
4.6±0.35
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
1.25±0.15
0.25
0.9±0.25
9.60±0.4
M
0.15
2.54
2
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
MARKING EXAMPLE
No. 1 pin
Mark
2513
NJ601
Assembly Lot
N
J
6
01
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
3
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Packing Style
Safety Standard
Approval
Application Part
Number*1
PS2513-1
PS2513-1-A
Pb-Free
Magazine case 100 pcs
Standard products PS2513-1
(UL Approved)
PS2513L-1
PS2513L-1-A
PS2513L-1-E3
PS2513L-1-E4
PS2513L-1-F3
PS2513L-1-F4
PS2513-1-V
PS2513L-1-V
PS2513L-1-E3-A
PS2513L-1-E4-A
PS2513L-1-F3-A
PS2513L-1-F4-A
PS2513-1-V-A
PS2513L-1-V-A
Embossed Tape 1 000 pcs/reel
Embossed Tape 2 000 pcs/reel
Magazine case 100 pcs
DIN EN60747-5-2
(VDE0884 Part2)
PS2513L-1-V-E3 PS2513L-1-V-E3-A
PS2513L-1-V-E4 PS2513L-1-V-E4-A
PS2513L-1-V-F3 PS2513L-1-V-F3-A
PS2513L-1-V-F4 PS2513L-1-V-F4-A
Embossed Tape 1 000 pcs/reel approved products
(Option)
Embossed Tape 2 000 pcs/reel
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Ratings
Parameter
Symbol
PS2513-1,
PS2513L-1
Unit
Diode
Reverse Voltage
VR
IF
6
V
mA
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
60
ΔPD/°C
PD
1.5
mW/°C
mW
A
150
Peak Forward Current*1
IFP
1
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
120
V
6
30
V
mA
Power Dissipation Derating
Power Dissipation
ΔPC/°C
PC
1.5
mW/°C
mW
Vr.m.s.
°C
150
Isolation Voltage*2
BV
5 000
Operating Ambient Temperature
Storage Temperature
TA
−55 to +100
−55 to +150
Tstg
°C
*1 PW = 100 μs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.1
MAX.
1.3
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 5 mA
VR = 5 V
IR
μA
pF
nA
Ct
V = 0 V, f = 1.0 MHz
30
Transistor Collector to Emitter Dark
Current
ICEO
VCE = 120 V, IF = 0 mA
100
Coupled
Current Transfer Ratio
(IC/IF)
CTR1
CTR2
VCE(sat)
IF = 1 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 10 mA, IC = 2 mA
25
50
75
100
200
0.3
%
%
V
125
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time*1
RI-O
CI-O
tr
VI-O = 1.0 kVDC
1011
Ω
V = 0 V, f = 1.0 MHz
0.5
3
pF
μs
VCC = 5 V, IC = 2 mA, RL = 100 Ω
Fall Time*1
tf
4
Turn-on Time*1
Turn-off Time*1
ton
toff
VCC = 5 V, IF = 5 mA, RL = 1.9 kΩ
5
60
60
μs
25
*1 Test circuit for switching time
I
F
Pulse Input
PW = 100
VCC
μ
s
Duty Cycle = 1/10
V
OUT
50 Ω
RL
= 100 Ω, 1.9 kΩ
5
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
175
150
125
100
75
175
150
125
100
75
50
50
25
25
100
(˚C)
100
(˚C)
0
25
50
75
125
0
25
50
75
125
Ambient Temperature T
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
50
35
30
25
20
15
10
5
T
A
= +100˚C
+60˚C
+25˚C
10
5
0˚C
–25˚C
–55˚C
1
0.5
IF = 5 mA
0.1
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Forward Voltage V (V)
0
4
8
10
2
6
Collector to Emitter Voltage VCE (V)
F
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
10 000
1 000
100
10
V
CE = 5 V
10 V
20 mA
10 mA
5 mA
10
5
24 V
40 V
120 V
2 mA
1
I
F
= 1 mA
0.5
1
0.1
–50
–25
0
25
50
75
100
1.0
0
0.2
0.4
0.6
0.8
Ambient Temperature T (˚C)
A
Collector Saturation Voltage VCE(sat) (V)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
250
200
150
100
V
n = 3
CC = 5 V,
Sample A
B
C
Normalized to 1.0
50
0
at T
A
= 25˚C,
I
F
= 5 mA, VCE = 5 V
–50
–25
0
25
50
75
100
10 k
100
0.1
0.5
1
5
10
50
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
100
10
1
1 000
100
10
IC
= 2 mA,
CC = 10 V,
CTR = 130%
I
V
F
= 5 mA,
CC = 5 V,
CTR = 130%
V
t
f
μ
tr
ts
tf
td
ts
tr
td
1
1 k
0.1
10
50 100
500
5 k
1 k
(Ω)
5 k
10 k
50 k 100 k
Load Resistance R
L
Load Resistance R
L
(Ω)
TURN-ON TIME vs.
AMBIENT TEMPERATURE
TURN-OFF TIME vs.
AMBIENT TEMPERATURE
10
8
100
80
60
40
20
0
I
F
= 5 mA,
CC = 5 V,
= 1.9 kΩ,
CTR = 150%
I
V
R
F
= 5 mA,
CC = 5 V,
= 1.9 kΩ,
CTR = 150%
V
RL
L
μ
μ
6
4
2
0
–50
–25
0
25
50
75
(˚C)
–50
–25
0
25
50
75
(˚C)
100
Ambient Temperature T
A
Ambient Temperature T
A
Remark The graphs indicate nominal characteristics.
7
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
LONG TERM CTR DEGRADATION
1.2
1.0
0.8
0.6
0.4
0.2
TYP.
I = 5 mA
F
TA
= 25˚C
I
F
= 5 mA
A
T = 60˚C
0
103
Time (Hr)
102
104
105
Remark The graph indicates nominal characteristics.
8
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
+0.1
4.5 MAX.
φ
1.5–0
1.55±0.1
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2513L-1-E3
PS2513L-1-E4
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
φ13.0±0.2
R 1.0
φ
φ
φ21.0±0.8
17.5±1.0
21.5±1.0
15.9 to 19.4
Outer edge of
flange
Packing: 1 000 pcs/reel
9
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
+0.1
4.5 MAX.
φ
1.5–0
1.55±0.1
8.0±0.1
4.0±0.1
5.3±0.1
0.4
Tape Direction
PS2513L-1-F3
PS2513L-1-F4
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
φ13.0±0.2
R 1.0
φ
φ
φ21.0±0.8
17.5±1.0
21.5±1.0
15.9 to 19.4
Outer edge of
flange
Packing: 2 000 pcs/reel
10
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
• Time of temperature higher than 220°C
10 seconds or less
60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows
• Flux
Three
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
260°C or below (molten solder temperature)
10 seconds or less
• Preheating conditions
• Number of times
• Flux
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
• Time (each pins)
350°C or below
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
11
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
12
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Speck
Unit
Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s.
IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80)
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
890
Vpeak
Upr
1 068
Vpeak
Test voltage (partial discharge test, procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < 5 pC
Upr
1 424
Vpeak
Vpeak
Highest permissible overvoltage
Degree of pollution (DIN VDE 0109)
Clearance distance
UTR
8 000
2
> 7.0
mm
mm
Creepage distance
> 7.0
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
Material group (DIN VDE 0109)
Storage temperature range
CTI
175
III a
Tstg
TA
–55 to +150
–55 to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100 °C
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Tsi
Isi
175
400
700
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
Psi
VIO = 500 V dc at TA = 175 °C (Tsi)
Ris MIN.
109
Ω
13
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
•
The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
14
Data Sheet PN10163EJ03V0DS
PS2513-1,PS2513L-1
This product uses gallium arsenide (GaAs).
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120 FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0504
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