PS2514L-1-F3 [CEL]
HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES;![PS2514L-1-F3](http://pdffile.icpdf.com/pdf2/p00328/img/icpdf/PS2514-1Y-A_2013996_icpdf.jpg)
型号: | PS2514L-1-F3 |
厂家: | ![]() |
描述: | HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES 分离技术 隔离技术 开关 |
文件: | 总15页 (文件大小:605K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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A Business Partner of Renesas Electronics Corporation.
Preliminary
PS2514-1,PS2514L-1
Data Sheet
R08DS0012EJ0100
Rev.1.00
Mar 19, 2012
HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES
DESCRIPTION
The PS2514-1 and PS2514L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor, enabling relatively high switching speed with high load resistor of several kΩ.
The PS2514-1 is in a plastic DIP (Dual In-line Package) and the PS2514L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
PIN CONNECTION
•
•
•
High isolation voltage (BV = 5 000 Vr.m.s.)
High collector to emitter voltage (VCEO = 40 V)
Guaranteed maximum switching speed
(Top View)
4
3
1. Anode
2. Cathode
3. Emitter
(toff ≤ 25 μs @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
•
High-speed switching (ton = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
(toff = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
Embossed tape product: PS2514L-1-F3: 2 000 pcs/reel
Pb-Free product
4. Collector
1
2
•
•
•
<R>
<R>
Safety standards
•
•
•
UL approved: No. E72422
CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
CQC approved: CQC11001056759/CQC11001056758
CQC11001056865/CQC11001057073
•
DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
•
•
•
Power supply
FA equipment
Electronic electricity meter
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 1 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2514-1
4.6±±.35
4
3
1
2
7.62
± to 15° +±.1
±.25–±.±5
1.25±±.15
±.5±±±.1±
±.25
M
2.54
Lead Bending Type
PS2514L-1
4.6±±.35
4
3
1
2
1.25±±.15
±.25
±.9±±.25
9.6±±±.4
M
2.54
±.15
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Unit (MIN.)
7 mm
Outer Creepage Distance
Inner Creepage Distance
Isolation Thickness
7 mm
4 mm
±.3 mm
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 2 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
MARKING EXAMPLE
<R>
No. 1 pin
Mark
Company Initial
Type Number
Assembly Lot
R
2514
NR131
N
R
1
31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Made in Japan Made in Taiwan
New PKG
Pb-Free and
Halogen Free
R
Y
Remark "PS" and "-1" are omitted from original type number.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 3 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
<R> ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Packing Style
Safety Standard Application Part
Specification etc.
Approval
Number*1
PS2514-1
PS2514-1Y-A
Pb-Free and
Halogen Free
Magazine case 1±± pcs
Standard products PS2514-1
(UL, CSA, CQC
approved)
PS2514L-1
PS2514L-1-F3
PS2514-1-V
PS2514L-1-V
PS2514L-1Y-A
PS2514L-1Y-F3-A
PS2514-1Y-V-A
PS2514L-1Y-V-A
PS2514L-1
Embossed Tape 2 ±±± pcs/reel
Magazine case 1±± pcs
DIN EN6±747-5-2
(VDE±884 Part2)
PS2514-1
PS2514L-1
PS2514L-1-V-F3 PS2514L-1Y-V-F3-A
Embossed Tape 2 ±±± pcs/reel approved
(Option)
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
VR
Ratings
Unit
V
Diode
Reverse Voltage
6
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
IF
3±
1.5
mA
ΔPD/°C
PD
mW/°C
mW
A
15±
Peak Forward Current*1
IFP
±.5
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
4±
V
±.6
V
2±
mA
Power Dissipation Derating
Power Dissipation
ΔPC/°C
PC
1.5
mW/°C
mW
Vr.m.s.
°C
15±
Isolation Voltage*2
BV
5 ±±±
−55 to +1±±
−55 to +15±
Operating Ambient Temperature
Storage Temperature
TA
Tstg
°C
*1 PW = 1±± μs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 6±% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
5
TYP.
6
MAX.
7
Unit
mA
Input Current
IF
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 4 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.1
MAX.
1.3
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 5 mA
VR = 5 V
IR
μA
pF
nA
Ct
V = ± V, f = 1.± MHz
VCE = 4± V, IF = ± mA
1±
Transistor Collector to Emitter Dark
Current
ICEO
1±±
Coupled
Current Transfer Ratio
CTR
IF = 5 mA, VCE = 5 V
IF = 5 mA, IC = 1 mA
5±
125
2±±
%
V
Collector Saturation
Voltage
VCE (sat)
±.35
Isolation Resistance
Isolation Capacitance
Turn-on Time*1
RI-O
CI-O
ton
VI-O = 1.± kVDC
1±11
Ω
V = ± V, f = 1.± MHz
VCC = 5 V, IF = 5 mA, RL = 5 kΩ
±.5
15
15
pF
μs
25
25
Turn-off Time*1
toff
*1 Test circuit for switching time
VCC
Input
R = 5 kΩ
L
IF
ton
toff
Pulse Input
PW = 1±±
VOUT
t
d
ts
μ
s
Duty Cycle = 1/1±
9±%
Output
5± Ω
1±%
tr
t
f
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 5 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
<R>
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
15±
125
1±±
75
15±
125
1±±
75
1.5 mW/°C
1.5 mW/°C
5±
5±
25
25
±
±
±
±
25
5±
75
1±±
125
(°C)
15±
25
5±
75
1±±
125
(°C)
15±
Ambient Temperature T
A
Ambient Temperature T
A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
FORWARD CURRENT vs.
FORWARD VOLTAGE
1±±
5±
16
14
12
1±
8
T
A
= +1±±°C
+6±°C
+25°C
1±
5
1± mA
5 mA
±°C
–25°C
–55°C
1
6
±.5
3 mA
4
I
F
= 2 mA
4
2
±.1
±
±.7 ±.8 ±.9 1.± 1.1 1.2 1.3 1.4 1.5
Forward Voltage V (V)
±
2
6
8
1±
Collector to Emitter Voltage VCE (V)
F
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
1±±
1±±
1± mA
1±
1
1±
5 mA
4± V
2± V
CE = 1± V
1
3 mA
±.1
V
I
F
= 2 mA
±.6
±.±1
±.1
±
±.2
±.4
±.8
1
−5±
−25
±
25
5±
75
(°C)
1±±
Collector Saturation Voltage VCE (sat) (V)
Ambient Temperature T
A
Remark The graphs indicate nominal characteristics.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 6 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
NORMALIZED CURRENT TRANSFER
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
RATIO vs. AMBIENT TEMPERATURE
25±
2±±
15±
1±±
1.2
1.±
±.8
±.6
±.4
±.2
±.±
V
CE = 5 V
Sample A
B
C
5±
±
Normalized to 1.±
at T
A
= 25°C,
I
F
= 5 mA, VCE = 5 V
−5±
−25
±
25
5±
75
(°C)
1±±
1±±
1±±
1
1±
1±±
Ambient Temperature T
A
Forward Current I (mA)
F
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
1±±
1±
1±±
1±
1
IF
= 5 mA, VCC = 5 V,
IF
= 5 mA, VCC = 5 V,
R = 5 kΩ
L
CTR = 1±±%
CTR = 1±±%
t
off
on
ts
μ
μ
tf
tr
t
1
t
d
±.1
1±±
−5±
−25
±
25
5±
75
(°C)
1 ±±±
1± ±±±
(Ω)
1±± ±±±
Ambient Temperature T
A
Load Resistance R
L
TURN-ON TIME vs.
AMBIENT TEMPERATURE
TURN-OFF TIME vs.
AMBIENT TEMPERATURE
1±±
1±
1
1±±
1±
1
IF
= 5 mA, VCC = 5 V,
I
R
F
= 5 mA, VCC = 5 V,
= 5 kΩ
17±%
RL
= 5 kΩ
L
1±±%
μ
μ
CTR = 7±%
CTR = 7±%
1±±%
17±%
−5±
−25
±
25
5±
75
(°C)
−5±
−25
±
25
5±
75
(°C)
1±±
Ambient Temperature T
A
Ambient Temperature T
A
Remark The graphs indicate nominal characteristics.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 7 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
FREQUENCY RESPONSE
5
±
−5
3±± Ω
RL = 1±± Ω
−1±
−15
−2±
−25
V
CC = 5 V, I
F
= 5 mA,
1±
CTR = 17±%
±.1
1
1±±
1 ±±± 1± ±±±
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 8 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.±±±.1
4.±±±.1
+±.1
4.5 MAX.
φ
1.5–±
1.55±±.1
8.±±±.1
4.±±±.1
5.3±±.1
±.4
Tape Direction
PS2514L-1-F3
Outline and Dimensions (Reel)
2.±±±.5
2.±±±.5
13.±±±.2
φ
R 1.±
φ
φ
φ
21.±±±.8
17.5±1.±
21.5±1.±
15.9 to 19.4
Outer edge of
flange
Packing: 2 ±±± pcs/reel
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 9 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
<R>
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
D
A
Part Number
PS2514L
Lead Bending
A
B
C
D
lead bending type (Gull-wing)
for surface mount
9.2
2.54
1.7
2.2
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 10 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
NOTES ON HANDLING
<R>
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
26±°C or below (package surface temperature)
• Time of peak reflow temperature
• Time of temperature higher than 22±°C
1± seconds or less
6± seconds or less
• Time to preheat temperature from 12± to 18±°C 12± ± ±3± s
• Number of reflows
• Flux
Three
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of ±.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 1± s
26±°C MAX.
22±°C
to 6± s
18±°C
12±°C
12±±3± s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
26±°C or below (molten solder temperature)
1± seconds or less
• Preheating conditions
• Number of times
• Flux
12±°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content
of ±.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
• Time (each pins)
35±°C or below
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of ±.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.± mm from the root of the lead.
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 11 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between corrector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 12 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
<R>
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Spec.
Unit
Climatic test class (IEC 6±±68-1/DIN EN 6±±68-1)
55/1±±/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.5 × UIORM, Pd < 5 pC
UIORM
Upr
89±
Vpeak
1 335
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr
1 669
Vpeak
Vpeak
Upr = 1.875 × UIORM, Pd < 5 pC
Highest permissible overvoltage
UTR
8 ±±±
2
Degree of pollution (DIN EN 6±664-1 VDE±11± Part 1)
Comparative tracking index (IEC 6±112/DIN EN 6±112 (VDE ±3±3 Part 11))
Material group (DIN EN 6±664-1 VDE±11± Part 1)
Storage temperature range
CTI
175
III a
Tstg
TA
–55 to +15±
–55 to +1±±
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 5±± V dc at TA = 25°C
VIO = 5±± V dc at TA MAX. at least 1±±°C
Ris MIN.
Ris MIN.
1±12
1±11
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Tsi
Isi
175
4±±
7±±
°C
mA
mW
Current (input current IF, Psi = ±)
Power (output or total power dissipation)
Isolation resistance
Psi
VIO = 5±± V dc at TA = Tsi
Ris MIN.
1±9
Ω
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 13 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 14 of 14
Revision History
PS2514-1,PS2514L-1 Data Sheet
Description
Summary
Rev.
Date
Page
0.01
1.00
May 28, 2010
Mar 19, 2012
−
First edition issued
Throughout Preliminary Data Sheet -> Data Sheet
Throughout Safety standards approved
p.1
p.3
Addition of Pb-Free product
Modification of MARKING EXAMPLE
p.4
Modification of ORDERING INFORMATION
Addition of TYPICAL CHARACTERISTICS
Modification of RECOMMENDED MOUNT PAD DIMENSIONS
pp.6 to 8
p.10
pp.11 to 12 Addition of NOTES ON HANDLING
p.13 Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
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