PS9306L2-E3-AX [CEL]
0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER; 0.6 A输出电流，高CMR ， IGBT门极驱动， 6 -PIN SDIP PHOTOCOUPLER
| 型号： | PS9306L2-E3-AX |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | 0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER |
| 文件： | 总20页 (文件大小：3118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Business Partner of Renesas Electronics Corporation.
Preliminary
PS9306L,PS9306L2
Data Sheet
R08DS0017EJ0100
Rev.1.00
Nov 10, 2011
0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
DESCRIPTION
The PS9306L and PS9306L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9306L and PS9306L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9306L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9306L and PS9306L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9306L is lead bending type (Gull-wing) for surface mounting.
The PS9306L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
PIN CONNECTION
•
•
•
•
•
•
•
•
Long creepage distance (8 mm MIN.: PS9306L2)
Half size of 8-pin DIP
(Top View)
6
5 4
Peak output current (0.6 A MAX., 0.4 A MIN.)
High speed switching (tPLH, tPHL = 0.4 μs MAX.)
High common mode transient immunity (CMH, CML = ±25 kV/μs MIN.)
Embossed tape product : PS9306L-E3, PS9306L2-E3: 2 000 pcs/reel
Pb-Free product
1. Anode
2. NC
3. Cathode
4. VEE
5. VO
Safety standards
6. VCC
<R>
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved: No. 1115598
1
2
3
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
APPLICATIONS
•
•
•
IGBT, Power MOS FET Gate Driver
Industrial inverter
IH (Induction Heating)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 1 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
Lead Bending Type (Gull-wing) For Surface Mount
PS9306L
4.58±0.3
(0.82)
9.7±0.3
7.62
±2.015
1.27
0.25 M
0.8±0.25
0.4±0.1
Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount)
PS9306L2
4.58±0.3
(0.82)
11.5±0.3
7.62
±2.015
1.27
0.25 M
0.75±0.25
0.4±0.1
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 2 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
PHOTOCOUPLER CONSTRUCTION
Parameter
PS9306L
PS9306L2
Air Distance (MIN.)
7 mm
7 mm
8 mm
8 mm
Outer Creepage Distance (MIN.)
Isolation Distance (MIN.)
0.4 mm
0.4 mm
<R>
MARKING EXAMPLE
Company Initial
Type Number
Assembly Lot
R
9306
N131
No. 1 pin Mark
N
1
31
Week Assembled
Year Assembled
(Last 1 Digit)
Rank Code
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 3 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Packing Style
Safety Standard
Approval
Application
Part
Number*1
PS9306L
PS9306L-AX
Pb-Free
20 pcs (Tape 20 pcs cut) Standard
PS9306L
PS9306L-E3
PS9306L-E3-AX
(Ni/Pd/Au)
Embossed Tape 2 000
pcs/reel
products
(UL, CSA, SEMKO
PS9306L2
PS9306L2-AX
20 pcs (Tape 20 pcs cut) approved)
Embossed Tape 2 000
pcs/reel
PS9306L2
PS9306L2-E3
PS9306L2-E3-AX
PS9306L-V
PS9306L-V-AX
20 pcs (Tape 20 pcs cut) DIN EN60747-5-2 PS9306L
PS9306L-V-E3
PS9306L-V-E3-AX
Embossed Tape 2 000
pcs/reel
(VDE0884 Part2)
approved
PS9306L2-V
PS9306L2-V-AX
20 pcs (Tape 20 pcs cut) (Option)
Embossed Tape 2 000
pcs/reel
PS9306L2
PS9306L2-V-E3 PS9306L2-V-E3-AX
Note: *1. For the application of the Safety Standard, following part number should be used.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 4 of 19
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PS9306L,PS9306L2
Chapter Title
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
A
Parameter
Symbol
IF
Ratings
25
Unit
Diode
Forward Current
mA
A
Peak Transient
IF (TRAN)
1.0
Forward Current
(Pulse Width < 1 μs)
Reverse Voltage
VR
PD
5
V
mW
A
Power Dissipation *1
45
0.6
Detector High Level Peak
Output Current *2
IOH (PEAK)
Low Level Peak
Output Current *2
IOL (PEAK)
0.6
A
Supply Voltage
(VCC−VEE
)
0 to 35
0 to VCC
250
V
V
Output Voltage
Power Dissipation *3
Isolation Voltage *4
Operating Frequency *5
Operating Ambient Temperature
Storage Temperature
VO
PC
BV
f
mW
Vr.m.s.
kHz
°C
5 000
50
TA
Tstg
−40 to +110
−55 to +125
°C
Notes: *1. Reduced to 1.2 mW/°C at TA = 85°C or more.
*2. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%
*3. Reduced to 4.5 mW/°C at TA = 65°C or more.
*4. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-3 shorted together, 4-6 shorted together.
*5. IOH (PEAK) ≤ 0.4 A (≤ 2.0 μs), IOL (PEAK) ≤ 0.4 A (≤ 2.0 μs)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
(VCC−VEE
IF (ON)
MIN.
10
TYP. MAX.
Unit
V
)
30
12
Forward Current (ON)
8
mA
V
Forward Voltage (OFF)
VF (OFF)
TA
−2
0.8
110
Operating Ambient Temperature
−40
°C
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 5 of 19
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PS9306L,PS9306L2
Chapter Title
ELECTRICAL CHARACTERISTICS (TA = −40 to +110°C, VCC = 10 to 30 V, IF (ON) = 8 to
12 mA, VF (OFF) = −2 to 0.8 V, VEE = GND, unless otherwise specified)
Parameter
Symbol
VF
Conditions
IF = 10 mA, TA = 25°C
VR = 3 V, TA = 25°C
f = 1 MHz, VF = 0 V, TA = 25°C
VO = (VCC − 4 V) *2
VO = (VCC − 10 V) *3
VO = (VEE + 2.5 V) *2
VO = (VEE + 10 V) *3
IO = −100 mA *4
MIN.
TYP.*1
MAX.
1.8
Unit
V
Diode
Forward Voltage
Reverse Current
Input Capacitance
1.2
1.56
IR
10
μA
pF
A
CIN
30
Detector High Level Output Current
IOH
0.2
0.4
0.2
0.4
0.5
0.4
0.5
Low Level Output Current
IOL
A
High Level Output Voltage
Low Level Output Voltage
High Level Supply Current
Low Level Supply Current
VOH
VOL
ICCH
ICCL
IFLH
V
CC − 4.0 VCC − 1.8
V
IO = 100 mA
0.4
0.7
1.2
1.0
3.0
3.0
7.0
V
IF = 10 mA, IO = 0 mA
IF = 0 mA, IO = 0 mA
IO = 0 mA, VO > 5 V
mA
mA
mA
<R>
<R>
Coupled Threshold Input Current
(L → H)
Threshold Input Voltage
(H → L)
VFHL
CI-O
IO = 0 mA, VO < 5 V
0.8
V
Isolation Capacitance
VF = 0 V, f = 1 MHz, TA = 25°C
0.7
pF
Notes: *1. Typical values at TA = 25°C, VCC − VEE = 30 V.
*2. Maximum pulse width = 50 μs, Maximum duty cycle = 0.5%.
*3. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%.
*4. VOH is measured with the DC load current in this testing.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 6 of 19
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PS9306L,PS9306L2
Chapter Title
SWITCHING CHARACTERISTICS (TA = −40 to +110°C, VCC = 10 to 30 V, IF (ON) = 8 to
12 mA, VF (OFF) = −2 to 0.8 V, VEE = GND, unless otherwise specified)
Parameter
Symbol
tPLH
Conditions
Rg = 47 Ω, Cg = 3 nF,
f = 10 kHz,
MIN.
0.05
0.05
TYP.*1
MAX.
0.4
Unit
μs
Propagation Delay Time (L → H)
Propagation Delay Time (H → L)
Pulse Width Distortion (PWD)
0.18
tPHL
0.18
0.4
μs
|tPHL−tPLH
|
Duty Cycle = 50%*2,
0.25
0.3
μs
Propagation Delay Time
(Difference Between Any Two
Products)
t
PHL−tPLH IF = 10 mA,
−0.3
μs
VCC = 30 V
Rise Time
Fall Time
tr
tf
50
50
ns
ns
Common Mode Transient
Immunity at High Level Output
|CMH|
TA = 25°C, IF = 10 mA,
VCC = 30 V, VCM = 1.5 kV,
VO (MIN.) = 26 V
25
25
kV/μs
Common Mode Transient
|CML|
TA = 25°C, IF = 0 mA,
kV/μs
Immunity at Low Level Output
VCC = 30 V, VCM = 1.5 kV,
VO (MAX.) = 1 V
Notes: *1. Typical values at TA = 25°C, VCC − VEE = 30 V.
*2. This load condition is equivalent to the IGBT load at 1 200 V/25 A.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 7 of 19
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PS9306L,PS9306L2
Chapter Title
TEST CIRCUIT
Fig. 1 IOH Test Circuit
Fig. 2 IOL Test Circuit
V
CC
=
V
CC
=
10 to 30 V
10 to 30 V
1
2
3
1
2
3
6
6
0.1
μ
F
0.1 μF
I
OL
4 V
5
4
5
I
OH
2.5 V
4
IF
=
SHIELD
SHIELD
8 to 12 mA
Fig. 3 VOH Test Circuit
Fig. 4 VOL Test Circuit
V
CC
=
V
CC
=
10 to 30 V
10 to 30 V
1
2
3
1
2
3
6
6
0.1 μF
0.1 μF
V
OH
V
OL
5
5
100 mA
100 mA
4
4
IF
=
SHIELD
SHIELD
8 to 12 mA
<R>
Fig. 5 IFLH Test Circuit
Fig. 6 ICCH/ICCL Test Circuit
V
CC
=
V
CC
=
10 to 30 V
10 to 30 V
1
2
1
2
3
6
6
0.1 μF
0.1 μF
5
5
4
VO
> 5 V
IF
3
4
SHIELD
SHIELD
I
I
CCL: I
F
= 0 mA
= 10 mA
CCH: I
F
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 8 of 19
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PS9306L,PS9306L2
Chapter Title
<R>
Fig. 7 tPLH, tPHL, t
r
, t Test Circuit and Wave Forms
f
V
CC
=
IF = 10 mA
10 to 30 V
1
2
3
6
I
F
t
r
t
f
0.1 μF
V
O
90%
50%
10%
10 kHz
50% DUTY
CYCLE
5
47 Ω
3 nF
VOUT
4
t
PLH
t
PHL
SHIELD
<R>
Fig. 8 CMR Test Circuit and Wave Forms
I
F
A
B
1 500 V
V
CC = 30 V
90%
10%
1
2
3
6
V
CM
0.1 μF
V
O
t
r
t
f
5
4
V
OH
V
O
26 V
(Switch A: I
F
= 10 mA)
SHIELD
+
1 V
V
F
O
VOL
−
(Switch B: I
= 0 mA)
VCM = 1.5 kV
Remarks 1. Common Mode Transient Immunity at High Level Output is the maximum value of dVCM/dt at which the
output remains High Level (e.g. VO > 26 V).
2. Common Mode Transient Immunity at Low Level Output is the maximum value of dVCM/dt at which the
output remains Low Level (e.g. VO < 1.0 V).
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 9 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
<R>
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
A
DIODE POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
300
250
200
150
100
45
40
35
30
25
20
15
10
50
0
5
0
0
25
50
75
100
(°C)
125
2.4
7
0
25
50
75
100
(°C)
125
Ambient Temperature T
A
Ambient Temperature T
A
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
7
V
V
CC = 30 V,
> 5 V,
O
6
5
4
3
2
1
IO
= 0 mA
10
T
A
= +110°C
+100°C
+85°C
+50°C
+25°C
0°C
1
0.1
–40°C
0.01
0
1.0
1.2
1.4
1.6
1.8
2.0
(V)
2.2
–50 –25
0
25
50
75
(°C)
100 125
Forward Voltage V
F
Ambient Temperature T
A
HIGH LEVEL OUTPUT VOLTAGE – SUPPLY
VOLTAGE vs. AMBIENT TEMPERATURE
OUTPUT VOLTAGE vs.
FORWARD CURRENT
35
30
25
20
15
10
5
0
V
F
CC = 30 V,
= 10 mA,
= –100 mA
V
CC = 30 V
I
I
–0.5
–1
O
–1.5
–2
–2.5
–3
–3.5
–4
0
2
4
6
–50 –25
0
25
50
75
(°C)
100 125
Forward Current I (mA)
F
Ambient Temperature T
A
Remark The graphs indicate nominal characteristics.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 10 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
LOW LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
CC = 30 V,
= 0 mA,
OL = 2.5 V
V
CC = 30 V,
= 10 mA,
I
F
I
F
V
(VCC – VOH) = 4 V
–50 –25
0
25
50
75
(°C)
100 125
–50 –25
0
25
50
75
(°C)
100 125
Ambient Temperature T
A
Ambient Temperature T
A
LOW LEVEL OUTPUT VOLTAGE vs.
AMBIENT TEMPERATURE
SUPPLY CURRENT vs.
AMBIENT TEMPERATURE
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
2.5
2
V
CC = 30 V,
= 0 mA,
= 100 mA
V
V
CC = 30 V,
= OPEN
I
I
F
O
O
1.5
1
I
CCL (I = 0 mA)
F
I
CCH (I = 10 mA)
F
0.5
0
–50 –25
0
25
50
75
(°C)
100 125
–50 –25
0
25
50
75
(°C)
100 125
Ambient Temperature T
A
Ambient Temperature T
A
LOW LEVEL OUTPUT VOLTAGE vs.
LOW LEVEL OUTPUT CURRENT
HIGH LEVEL OUTPUT VOLTAGE – SUPPLY
VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT
0
4
3
2
1
0
V
CC = 30 V,
= 0 mA
I
F
–1
–2
–3
–4
V
CC = 30 V,
= 10 mA
I
F
–5
0.2
0.3
0.4
0.5
0.6
0.2
0.3
0.4
0.5
0.6
0
0.1
0
0.1
High Level Output Current IOH (A)
Low Level Output Current IOL (A)
Remark The graphs indicate nominal characteristics.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 11 of 19
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PS9306L,PS9306L2
Chapter Title
PROPAGATION DELAY TIME,
PULSE WIDTH DISTORTION
vs. AMBIENT TEMPERATURE
SUPPLY CURRENT vs.
SUPPLY VOLTAGE
3
2.5
2
400
350
300
250
200
150
100
50
V
R
CC = 30 V, I
F
= 10 mA,
= 3 nF,
V
O
= OPEN
g
= 47 Ω, C
g
f = 10 kHz, Duty cycle = 50%
t
PHL
1.5
1
I
CCL (I
F
= 0 mA)
= 10 mA)
t
PLH
I
CCH (I
F
PWD
0.5
0
0
–50 –25
0
25
50
75
(°C)
100 125
10
15
20
25
30
Supply Voltage VCC (V)
Ambient Temperature T
A
PROPAGATION DELAY TIME vs.
SUPPLY VOLTAGE
PROPAGATION DELAY TIME vs.
FORWARD CURRENT
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
I
F
= 10 mA, R
g
= 47 Ω, C = 3 nF,
g
V
CC = 30 V, R
g
= 47 Ω, C = 3 nF,
g
f = 10 kHz, Duty cycle = 50%
f = 10 kHz, Duty cycle = 50%
t
PHL
t
PLH
t
PLH
t
PHL
0
0
10
15
20
25
30
0
10
20
25
Forward Current I (mA)
F
Supply Voltage VCC (V)
PROPAGATION DELAY TIME
vs. LOAD RESISTANCE
PROPAGATION DELAY TIME vs.
LOAD CAPACITANCE
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
V
CC = 30 V, I
F
= 10 mA, C = 3 nF,
g
V
R
CC = 30 V, I
= 47 Ω, f = 10 kHz,
Duty cycle = 50%
F
= 10 mA,
f = 10 kHz, Duty cycle = 50%
g
t
PHL
t
PHL
t
PLH
t
PLH
0
0
0
50
Load Capacitance C
100
0
50
Load Resistance R (Ω)
100
g
(nF)
g
Remark The graphs indicate nominal characteristics.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 12 of 19
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PS9306L,PS9306L2
Chapter Title
<R>
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.0±0.1
+0.1
4.0±0.1
1.5
–0
4.5 MAX.
+0.1
1.5
–0
0.35
8.0±0.1
5.08±0.1
Tape Direction
PS9306L-E3
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
13.0±0.2
R 1.0
21.0±0.8
17.5±1.0
21.5±1.0
15.9 to 19.4
Outer edge of
flange
Packing: 2 000 pcs/reel
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 13 of 19
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PS9306L,PS9306L2
Chapter Title
Outline and Dimensions (Tape)
2.0±0.1
+0.1
4.0±0.1
1.5
–0
4.5 MAX.
+0.1
2.0
–0
8.0±0.1
0.35
5.08±0.1
Tape Direction
PS9306L2-E3
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
13.0±0.2
R 1.0
21.0±0.8
25.5±1.0
29.5±1.0
23.9 to 27.4
Outer edge of
flange
Packing: 2 000 pcs/reel
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 14 of 19
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PS9306L,PS9306L2
Chapter Title
<R>
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
D
A
Part Number
PS9306L
Lead Bending
A
B
C
D
lead bending type (Gull-wing)
for surface mount
9.2
1.27
0.8
2.2
lead bending type (Gull-wing)
for long creepage distance (surface mount)
10.2
1.27
0.8
2.2
PS9306L2
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 15 of 19
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PS9306L,PS9306L2
Chapter Title
<R>
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
•
•
•
•
•
•
Peak reflow temperature
260°C or below (package surface temperature)
10 seconds or less
Time of peak reflow temperature
Time of temperature higher than 220°C
Time to preheat temperature from 120 to 180°C
Number of reflows
60 seconds or less
120±30 s
Three
Flux
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
•
•
•
•
•
Temperature
Time
260°C or below (molten solder temperature)
10 seconds or less
Preheating conditions 120°C or below (package surface temperature)
Number of times
Flux
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
•
•
•
Peak Temperature (lead part temperature) 350°C or below
Time (each pins)
Flux
3 seconds or less
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
Fluxes
•
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output
transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 16 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
<R>
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 0.1 μF is used between VCC and GND near device. Also, ensure that the distance
between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close
to the input block pattern of the photocoupler.
If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT
output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics.
(If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to
the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the
range of the recommended operating conditions, and be sure to thoroughly evaluate operation.)
(3) Pin 2 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may
degrade the internal noise environment of the device.
Note: *1. NC: Non-Connection (No Connection).
3. Make sure the rise/fall time of the forward current is 0.5 μs or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/μs or less.
5. Avoid storage at a high temperature and high humidity.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 17 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
<R>
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Spec.
Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1)
40/110/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
UIORM
Upr
Vpeak
Vpeak
1 130
1 808
U
pr = 1.6 × UIORM., Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr
2 119
Vpeak
Upr = 1.875 × UIORM., Pd < 5 pC
Highest permissible overvoltage
UTR
8 000
2
Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11))
Material group (DIN EN 60664-1 VDE0110 Part 1)
Storage temperature range
CTI
175
III a
Tstg
TA
–55 to +125
–40 to +110
°C
°C
Operating temperature range
Isolation resistance, minimum value
V
IO = 500 V dc at TA = 25°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100°C
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Tsi
Isi
Psi
175
400
700
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
V
IO = 500 V dc at TA = Tsi
Ris MIN.
109
Ω
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 18 of 19
A Business Partner of Renesas Electronics Corporation.
PS9306L,PS9306L2
Chapter Title
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 19 of 19
Revision History
PS9306L,PS9306L2 Data Sheet
Description
Summary
Rev.
Date
Page
0.01
1.00
Aug 20, 2010
Nov 10, 2011
−
First edition issued
Throughout Preliminary Data Sheet → Data Sheet
Throughout Safety standards approved
p.3
p.6
p.8
p.9
Modification of MARKING EXAMPLE
Modification of ELECTRICAL CHARACTERISTICS
Addition of TEST CIRCUIT Fig. 6
Modification of TEST CIRCUIT Fig. 7, 8
pp.10 to 12 Addition of TYPICAL CHARACTERISTICS
pp.13, 14
p.15
Addition of TAPING SPECIFICATIONS
Addition of RECOMMENDED MOUNT PAD DIMENSIONS
Modification of NOTES ON HANDLING
p.16
p.17
Modification of USAGE CAUTIONS
p.18
Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
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