GaAs INTEGRATED CIRCUIT

UPG2155TB

NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH

DESCRIPTION

The

µ

PG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone

applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.

FEATURES

• Low insertion loss

: L

INS

= 0.35 dB TYP. @ V

cont

= +2.6 V/0 V, f = 1.0 GHz

: L

INS

= 0.40 dB TYP. @ V

cont

= +2.6 V/0 V, f = 2.0 GHz

: L

INS

= 0.45 dB TYP. @ V

cont

= +2.6 V/0 V, f = 2.5 GHz

• High linearity

: 2f0 = 70 dBc TYP. @ V

cont

= +2.6 V/0 V, f = 0.9 GHz, P

in

= +34.5 dBm

: 3f0 = 75 dBc TYP. @ V

cont

= +2.6 V/0 V, f = 0.9 GHz, P

in

= +34.5 dBm

• 6-pin super minimold package (2.1

×

2.0

×

0.9 mm)

APPLICATION

• GSM Triple/Quad band digital cellular

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

G4R

Supplying Form

•

Embossed tape 8 mm wide

•

Pin 4, 5, 6 face the perforation side of the tape

•

Qty 3 kpcs/reel

µ

PG2155TB-E4

µ

PG2155TB-E4-A 6-pin super minimold

(Pb-Free)

Remark

To order evaluation samples, contact your nearby sales office.

Part number for sample order:

µ

PG2155TB-A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10583EJ01V0DS (1st edition)

Date Published November 2005 CP(K)

©

NEC Compound Semiconductor Devices, Ltd. 2005