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Description:
UPG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1
Prototype PCB
Part No.:   UPG2314T5N
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Description:   POWER AMPLIFIER FOR BluetoothTM Class 1
File Size :   288 K    
Page : 10 Pages
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Maker   CEL [ CALIFORNIA EASTERN LABS ]http://www.cel.com
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100%
GaAs HBT INTEGRATED CIRCUIT
µ
PG2314T5N
POWER AMPLIFIER FOR Bluetooth
TM
Class 1
DESCRIPTION
The
µ
PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface
mounting.
FEATURES
• Operation frequency
• Supply voltage
• Control voltage
• Circuit current
• Output power
• Gain control range
• High efficiency
: f
opt
= 2 400 to 2 500 MHz (2 450 MHz TYP.)
: V
CC
1, 2 = 2.7 to 3.6 V (3.0 V TYP.)
: V
cont
= 0 to 3.6 V (3.0 V TYP.)
: V
bias
+ V
enable
= 0 to 3.1 V (3.0 V TYP.)
: I
CC
= 65 mA TYP. @ V
CC
1, 2 = 3.0 V, V
bias
+ V
enable
= 3.0 V, V
cont
= 3.0 V,
P
in
= 0 dBm
: P
out
= +20 dBm TYP. @ V
CC
1, 2 = 3.0 V, V
bias
+ V
enable
= 3.0 V, V
cont
= 3.0 V,
P
in
= 0 dBm
: GCR = 23 dB TYP. @ V
CC
1, 2 = 3.0 V, V
bias
+ V
enable
= 3.0 V, V
cont
= 0 to 3.0 V,
P
in
= 0 dBm
: PAE = 50% TYP.
• High-density surface mounting : 6-pin plastic TSON package (1.5
×
1.5
×
0.37 mm)
APPLICATIONS
• Power Amplifier for Bluetooth Class 1
ORDERING INFORMATION
Part Number
Order Number
Package
6-pin plastic TSON
(Pb-Free)
Marking
G5D
Supplying Form
Embossed tape 8 mm wide
Pin 1, 6 face the perforation side of the tape
Qty 3 kpcs/reel
µ
PG2314T5N-E2
µ
PG2314T5N-E2-A
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2314T5N
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10624EJ01V0DS (1st edition)
Date Published July 2006 NS CP(K)
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