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NE350184C-T1A [CEL]

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET; 异质结型场效应晶体管K- BAND超低噪声放大器N沟道HJ -FET

NE350184C-T1A


元器件型号：	NE350184C-T1A
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 异质结型场效应晶体管K- BAND超低噪声放大器N沟道HJ -FET 晶体放大器晶体管场效应晶体管
PDF文件：	总8页 (文件大小：265K)
下载文档：	下载PDF数据表文档文件
型号参数：NE350184C-T1A参数

NE350184C-T1-A

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction FET, LEAD FREE, CERAMIC, 84C, MICRO-X-4

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0 NEC

NE350184C-T1-A

NE350184C-T1-A

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2 RENESAS

NE350184C-T1A-A

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction FET, LEAD FREE, CERAMIC, 84C, MICRO-X-4

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0 NEC

NE3503M04

NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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583 CEL

NE3503M04-A

NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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135 CEL

NE3503M04-A

NE3503M04-A

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1 RENESAS

NE3503M04-T2

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, SUPER MINIMOLD, M04, 4 PIN

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0 NEC

NE3503M04-T2

KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, SUPER MINIMOLD, M04, 4 PIN

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0 RENESAS

NE3503M04-T2-A

NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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135 CEL

NE3503M04-T2-A

NE3503M04-T2-A

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0 RENESAS

NE3503M04-T2B-A

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN

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0 NEC

NE3503M04-T2B-A

NE3503M04-T2B-A

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0 RENESAS

NE3505M04

HETERO JUNCTION FIELD EFFECT TRANSISITOR

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0 CEL

NE3505M04-T2

HETERO JUNCTION FIELD EFFECT TRANSISITOR

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0 CEL

NE3508M04

HETERO JUNCTION FIELD EFFECT TRANSISITOR

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125 CEL

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