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元器件品牌
NE3508M04-T2-A
[CEL]
HETERO JUNCTION FIELD EFFECT TRANSISITOR; 异质结场效应TRANSISITOR
元器件型号：
NE3508M04-T2-A
生产厂家：
CALIFORNIA EASTERN LABS
描述和应用：
HETERO JUNCTION FIELD EFFECT TRANSISITOR
异质结场效应TRANSISITOR
晶体 晶体管 光电二极管 ISM频段 放大器
PDF文件：
总11页 (文件大小：1291K)
下载文档：
下载PDF数据表文档文件
型号参数：NE3508M04-T2-A参数
查看货源
NE3508M04-T2B-A
NE3508M04-T2B-A
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RENESAS
NE3509M04
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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110
CEL
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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346
CEL
NE3509M04_06
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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CEL
NE3509M04-A
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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CEL
NE3509M04-A
NE3509M04-A
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RENESAS
NE3509M04-A
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, MO-4, 4 PIN
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NEC
NE3509M04-T2
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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21
CEL
NE3509M04-T2
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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41
CEL
NE3509M04-T2-A
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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80
CEL
NE3509M04-T2-A
NE3509M04-T2-A
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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0
RENESAS
NE3509M04-T2-A
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, MO-4, 4 PIN
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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0
NEC
NE3509M04-T2B-A
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
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0
NEC
NE3509M04-T2B-A
NE3509M04-T2B-A
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0
RENESAS
NE3509M14
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
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RENESAS
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