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NE5511279A-T1-A [CEL]

7.5 V UHF BAND RF POWER SILICON LD-MOS FET; 7.5 V UHF频段射频功率硅LD- MOS FET
NE5511279A-T1-A
元器件型号： NE5511279A-T1-A
生产厂家： CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用：

7.5 V UHF BAND RF POWER SILICON LD-MOS FET
7.5 V UHF频段射频功率硅LD- MOS FET

射频
PDF文件： 总4页 (文件大小：293K)
下载文档：  下载PDF数据表文档文件
型号参数：NE5511279A-T1-A参数
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NE5511279A-T1A-A

 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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24 CEL

NE5511K0+/-.1%

 Fixed Resistor, Metal Film, 0.25W, 11000ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel

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0 VISHAY

NE5511K0+/-1%

 Fixed Resistor, Metal Film, 0.25W, 11000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

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0 VISHAY

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NE5512D-T

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NE5512D-T

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NE5512N

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NE5514F

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NE5514F

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2 PHILIPS
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