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NE5520279A-T1-A [CEL]

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET; 3.2 V， 2 W ， L＆ S波段中功率硅LD- MOSFET
NE5520279A-T1-A
元器件型号： NE5520279A-T1-A
生产厂家： CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用：

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
3.2 V， 2 W ， L＆ S波段中功率硅LD- MOSFET

晶体 晶体管 ISM频段 放大器
PDF文件： 总8页 (文件大小：352K)
下载文档：  下载PDF数据表文档文件
型号参数：NE5520279A-T1-A参数
 查看货源

NE5520379A

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104 CEL

NE5520379A

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2 NEC

NE5520379A-A

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5520379A-T1

 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 CEL

NE5520379A-T1A

 暂无描述

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0 CEL

NE5520379A-T1A-A

 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

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75 CEL

NE5521

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338 PHILIPS

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177 PHILIPS

NE5521D-T

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136 ETC

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0 PHILIPS

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167 PHILIPS

NE552R479A

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67 CEL

NE552R479A-T1

 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN

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0 RENESAS

NE552R479A-T1

 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE552R479A-T1A

 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC
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