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元器件品牌
NE552R479A
[CEL]
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET; NEC的3.0 V, 0.25 W L & S波段中功率硅LD- MOSFET
元器件型号:
NE552R479A
生产厂家:
CALIFORNIA EASTERN LABS
描述和应用:
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
NEC的3.0 V, 0.25 W L & S波段中功率硅LD- MOSFET
晶体 晶体管 放大器
PDF文件:
总9页 (文件大小:497K)
下载文档:
下载PDF数据表文档文件
型号参数:NE552R479A参数
查看货源
NE552R479A-T1
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN
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RENESAS
NE552R479A-T1
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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NEC
NE552R479A-T1A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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NEC
NE552R479A-T1A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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NEC
NE552R479A-T1A-A
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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CEL
NE552R479A-T1A-A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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NEC
NE552R679A
Discrete
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ETC
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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NEC
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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25
NEC
NE552R679A-A
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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NEC
NE552R679A-T1
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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9
NEC
NE552R679A-T1
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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20
NEC
NE552R679A-T1A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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17
NEC
NE552R679A-T1A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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3
NEC
NE552R679A-T1A-A
暂无描述
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NEC
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